TRANSISTOR C 2026
Abstract: GPS05094 GPS05791 P-DSO-20
Text: ICs for Communications ISDN High Voltage Power Controller IHPC PEB 2026 Version 1.1 Data Sheet 09.99 DS 2 • PEB 2026 Revision History: Current Version: 09.99 Previous Version: preliminary Data Sheet 02.96 Page in previous Version Page (in current Version)
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GPS05094
P-DSO-20-6
GPS05791
P-DSO-20-10
TRANSISTOR C 2026
GPS05094
GPS05791
P-DSO-20
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P-DSO-20
Abstract: 2026T-P PEB2026 ITB07375 ISDN High Voltage Power Controller IHPC one line diagram 2026T-S
Text: ISDN High Voltage Power Controller IHPC PEB 2026 General Description The IHPC is an integrated power controller especially designed for feeding two-wire ISDN-transmission lines. One line can be powered by one IHPC. An external resistor defines the value of the current-limit for the line. Powering can
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lim-DSO-20-6
2026T-P
P-DSO-20-10
2026T-S
P-DSO-20-6
P-DSO-20
ITB07375
2026T-P
PEB2026
ITB07375
ISDN High Voltage Power Controller IHPC
one line diagram
2026T-S
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a19t
Abstract: A19t SOT-23
Text: 环境经营推进部 千叶县千叶市美浜区中濑 1-8 邮编 261-8507 电话：+81-43-211-1111（总机） +81-43-211-1149（直线） 传真：+81-43-211-8019 主页：http://www.sii.co.jp/eco/ 力求与社会共存 与地球环境和谐 精工电子集团
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1-1109/000/CO/SE
449kl
789kl
000m3
594t-CO2
a19t
A19t SOT-23
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VT1634AL
Abstract: tf041-th-pcb via vt1634al PCT303W PCT303A ad7 l59 16pin soic MITAC schematic 39-XI amilo schematic W83L950
Text: SERVICE MANUAL FOR 8650 BY: Sanny.Gao Repair Technology Research Department /EDVD November. 2005/R01 8650 N/B Maintenance Contents 1. Hardware Engineering Specification …………………………………………………………………. 4 1.1 Introduction …………………………………………………………………………………………………………… 4
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2005/R01
PN800
VT8235CE
W83L950D
VT1634AL
tf041-th-pcb
via vt1634al
PCT303W
PCT303A
ad7 l59 16pin soic
MITAC schematic
39-XI
amilo schematic
W83L950
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CP2211
Abstract: VT1634 ac14g mitac 8 W83L950 LM358 K8N800 h55 MOTHERBOARD CIRCUIT diagram ICS952007 cb-1410
Text: SERVICE MANUAL FOR 8889 BY: Star Meng Repair Technology Research Department /EDVD Nov.2004 8889 N/B Maintenance Contents 1. Hardware Engineering Specification ……………………………………………………………………… 4 1.1 Introduction ………………………………………………………………………………………………………………. 4
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Athon64
K8N800
VT8235
ICS950405
W83L950D
CP2211
VT1634
ac14g
mitac 8
W83L950
LM358
h55 MOTHERBOARD CIRCUIT diagram
ICS952007
cb-1410
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intel chipset g31 motherboard repair
Abstract: l7251 mitac 8666 diode 25PH 800 PN800 intel g31 motherboard repair g31 motherboard repair CGR18650C PC709 VIA vt8237
Text: SERVICE MANUAL FOR 8666 BY: Star Meng Repair Technology Research Department /EDVD Apr.2005 / R01 8666 N/B Maintenance Contents 1. Hardware Engineering Specification ……………………………………………………………………… 4 1.1 Introduction ………………………………………………………………………………………………………………. 4
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PN800
VT8235CE
ICS950902
intel chipset g31 motherboard repair
l7251
mitac 8666
diode 25PH 800
intel g31 motherboard repair
g31 motherboard repair
CGR18650C
PC709
VIA vt8237
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Untitled
Abstract: No abstract text available
Text: ICs for Communications ISDN High Voltage Power Controller IHPC PEB 2026 Version 1.1 Data Sheet 09.99 DS 2 PEB 2026 Revision History: Current Version: 09.99 Previous Version: preliminary Data Sheet 02.96 Page in previous Version Page (in current Version)
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P-DSO-20-10
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smd KJD
Abstract: PEF2026 marking kjd PEB2026 ITB07375 ITD07385 ITP07376 ITP07377 ITS07379 ITS07386
Text: Infineon technologies ICs for Communications ISDN High Voltage Power Controller IHPC PEB 2026 Version 1.1 Data Sheet 09.99 DS 2 This Material Copyrighted By Its Respective Manufacturer PEB 2026 Revision History: Current Version: 09.99 Previous Version: preliminary Data Sheet 02.96
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P-DSO-20-10
smd KJD
PEF2026
marking kjd
PEB2026
ITB07375
ITD07385
ITP07376
ITP07377
ITS07379
ITS07386
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2010 smd resistor
Abstract: SMD capacitor package capacitor smd 106 ISDN High Voltage Power Controller IHPC SMD 106 CAPACITOR 2026T-P 2026T-S
Text: ISDN High Voltage Power Controller IHPC General Description The IHPC is an integrated power controller especially designed for feeding two-wire ISDN-transmission lines. One line can be powered by one IHPC. An external resistor defines the value of the current-limit for the line. Powering
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2026T-P
2026T-S
PEF2026T-P
2026T-S
P-DSO-20-10
P-DSO-20-6
P-DSQ-20
2010 smd resistor
SMD capacitor package
capacitor smd 106
ISDN High Voltage Power Controller IHPC
SMD 106 CAPACITOR
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pmb 4220
Abstract: Siemens pmb 4220 PMB 27251 4310 SMD IC 2197-T 82526-N smd 2035 DSP/pmb 4220 PMB27201 SICOFI PEF 2465
Text: Summary of Types in Alphanumerical Order Type Short Title Function Page PEB 2025-N IEPC ISDN Exchange Power Controller SMD 121 PEB 2025-P IEPC ISDN Exchange Power Controller 121 PEB 2026T-P IHPC ISDN High Voltage Power Controller (SMD) 106 PEB 2026T-S IHPC
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2025-N
2025-P
2026T-P
2026T-S
20320-H
2035-N
2035-P
2045-N
2045-P
2046-N
pmb 4220
Siemens pmb 4220
PMB 27251
4310 SMD IC
2197-T
82526-N
smd 2035
DSP/pmb 4220
PMB27201
SICOFI PEF 2465
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SIEMENS BST
Abstract: A712S siemens 230 96 SIEMENS BST P smd 42t MAS 10 RCD SIEMENS BST h 05 60 SIEMENS BST g 02 60 HPC16 SIEMENS BST N 35
Text: SIEM ENS 4M x 16-Bit Dynamic RAM HYB 3164165AT L -40/-50/-60 (8k, 4k & 2k-Refresh, EDO-version) HYB 3165165AT(L) -40/-50/-60 HYB 3166165AT(L) -40/-50/-60 P re lim in ary Info rm ation • 4 194 304 words by 16-bit organization • 0 to 70 ”C operating temperature
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16-Bit
3164165AT
3165165AT
3166165AT
fiE3Sb05
A712S
SIEMENS BST
siemens 230 96
SIEMENS BST P
smd 42t
MAS 10 RCD
SIEMENS BST h 05 60
SIEMENS BST g 02 60
HPC16
SIEMENS BST N 35
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DTMF Tone Decoder
Abstract: TSOP32 pad DDS1703 MSM7570L-01 MSM7570L-02
Text: O K I Semiconductor M SM 7570L-01/02 Multi-Function ADPCM CODEC G E N E R A L DESCRIPTION The M SM 7570L-01 /0 2 , developed for advanced digital cordless telephone system s, are single channel A D PC M CO D EC ICs w hich perform m utual transcoding betw een the analog v oiceband
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MSM7570L-01/MSM7570L-02
7570L-01
7570L
MSM7570L-01/02
b7B4240
00H1724
DTMF Tone Decoder
TSOP32 pad
DDS1703
MSM7570L-01
MSM7570L-02
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Untitled
Abstract: No abstract text available
Text: IBM11N8845HB Preliminary 8M x 72 Super EOS Module Features • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual In-line Memory Module • 8Mx72 Extended Data Out Page Mode DIMMs • • Provides Chip-Kill ECC protection transparently to an existing Single Error Correction (SEC) system
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IBM11N8845HB
8Mx72
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Untitled
Abstract: No abstract text available
Text: Electrical Characteristics 12.1 Signal Specifications 12.1.1 Unused Pins 12 For reliable operation, always connect unused inputs to an appropriate signal level. Unused A G TL+ inputs should be connected to V 7 7 . Unused active low 3.3 V-tolerant inputs should be
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Untitled
Abstract: No abstract text available
Text: IBM11D1365E IBM11D2365E 1M/2M x 36 DRAM Module Features 72-Pin Single-In-Line Memory Module Performance: -60 High Performance C M O S process Single 5V, ± 0.5V Power Supply All inputs & outputs are fully TTL & C M O S compatible Low active current dissipation
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IBM11D1365E
IBM11D2365E
72-Pin
1104ns
124ns|
Q0D37
DD0373Ô
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O-7620
Abstract: Nippon capacitors
Text: HB56UW1672EJN-A Series, HB56UW1664EJN-A Series 16777216-word x 72-bit High Density Dynamic RAM Module, 16777216-word x 64-bit High Density Dynamic RAM Module HITACHI ADE-203-819A Z Rev. 1.0 Sep. 5, 1997 Description The HB56UW1672EJN-A, HB56UW1664EJN-A belong to 8-byte DIMM (Dual in-line Memory Module)
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HB56UW1672EJN-A
HB56UW1664EJN-A
16777216-word
72-bit
64-bit
ADE-203-819A
HB56UW1672EJN-A,
O-7620
Nippon capacitors
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Untitled
Abstract: No abstract text available
Text: IBM11N8645B IBM11N8735B IBM11N8645C IBM11N8735C 8M x 64/72 DRAM MODULE Features • System Performance Benefits: • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual In-line Memory Module -Non buffered for increased performance -Reduced noise 35 V s s ^ c c P'ns
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IBM11N8645B
IBM11N8735B
IBM11N8645C
IBM11N8735C
8Mx64,
8Mx72
SA14-4624-04
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TB 1226 BN
Abstract: 531 T70 n03 0AS001 B05AD 2U 34
Text: in y Intel 450NX PCIset 82454NX PCI Expander Bridge PXB 82453NX Data Path Multiplexor (MUX) 82452NX RAS/CAS Generator (RCG) 82451 NX Memory & I/O Controller (MIOC) Revision 1.3 March 1999 Intel Corporation 1998,1999 Information in this document is provided in connection with Intel products. No license, express or
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450NX
82454NX
82453NX
82452NX
TB 1226 BN
531 T70 n03
0AS001
B05AD
2U 34
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trw 1014
Abstract: ibm dram
Text: IBM0118165 IBM0118165M IBM0118165B IBM0118165P 1M x 16 10/10 EDO DRAM Features • 1,048,576 wordby 16 bit organization • Low Power Dissipation - Active max - 130 mA /1 0 5 mA . Standby: TTL Inputs (max) - 1.0 mA " Standby: CMOS Inputs (max) - 1 0 mA (SP version)
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IBM0118165
IBM0118165M
IBM0118165B
IBM0118165P
200VA
SA14-4223-06
IBM0118165B
trw 1014
ibm dram
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Untitled
Abstract: No abstract text available
Text: IB M 1 1 M 4 7 3 5 C IB M 1 1 M 4 7 3 5 C B 4M x 72 DRAM MODULE Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • Optimized for ECC applications • System Performance Benefits: - • 4Mx72 Extended Data Out Page Mode DIMM • Performance:
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4Mx72
124ns
104ns
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HM5118165J6
Abstract: No abstract text available
Text: HM5118165 Series 1048576-word x 16-bit Dynamic RAM HITACHI ADE-203-636C Z Rev. 3.0 Feb. 24, 1997 Description The Hitachi HM5118165 is a CMOS dynamic RAM organized as 1,048,576-word x 16-bit. It employs the most advanced 0.5 |im CMOS technology for high performanceand low power. The HM5118165offers
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HM5118165
1048576-word
16-bit
ADE-203-636C
576-word
16-bit.
HM5118165offers
in42-pin
50-pin
HM5118165J6
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K250 capacitor
Abstract: DNR2
Text: @ LG Semicon. Co. LTD. Features Description The GMM7322010ES/SG is a 2M x 32 bits D y n a m ic R A M M O D U L E w h ic h is assembled 16 pieces o f 1M x 4bit EDO DRAMs in 24 pin SOJ package on both sides the printed circuit board with decoupling capacitors. The G M M 7322010ES/SG is
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GMM7322010ES/SG
7322010ES/SG
GMM7322010ES/SG
GMM7322010ES
GMM7322010ESG
D0Qb40^
K250 capacitor
DNR2
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MSC2343257A-XXDS8
Abstract: No abstract text available
Text: MSC2343257A-xxBS8/DS8 1995.12.20. OKI semiconductor MSC2343257A-XXBS8/DS8 4,194,304 Word x 32-Bit DYNAMIC RAM MODULE : FAST PAGE MODE WITH EDO G E N E R A L D ES C R IPTIO N The Oki MSC2343257A-xxBS8/DS8 is a fully decoded, 4,194,304 word x 32 bit CMOS dynamic random
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MSC2343257A-xxBS8/DS8
MSC2343257A-XXBS8/DS8
32-Bit
72-pin
MSC2343257A-xx8S8
MSC2343257A-XXDS8
MSC2343257A-xxBSa/OSB
MSC2343257A-XXDS8
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d42s
Abstract: n010 marking
Text: DATA SHEET MOS INTEGRATED CIRCUIT juPD42S16405L, 4216405L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 4 M -W ORD BY 4-BIT, EDO Description The ,uPD42S16405L, 4216405L are 4,194,304 w ords by 4 bits CMOS dynam ic RAM with optional EDO. EDO is a kind of the page mode and is useful for the read operation.
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uPD42S16405L
uPD4216405L
4216405L
PD42S16405L
26-pin
d42s
n010 marking
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