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Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: Part Number: Integra IGN4450M50 TECHNOLOGIES, INC. C-Band Radar Transistor GaN on Silicon Carbide FET  High Power Gain  Excellent Thermal Stability  Gold Metal IGN4450M50 is an internally pre-matched, gallium nitride GaN high electron mobility transistor (HEMT). This part is designed for	Original	IGN4450M50 IGN4450M50 300us IGN4450M50-REV-PR1-DS-REV-D	PDF

Catalog Datasheet

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Untitled

Abstract: No abstract text available
Text: Part Number: Integra IGN4450M50 TECHNOLOGIES, INC. C-Band Radar Transistor GaN on Silicon Carbide FET  High Power Gain  Excellent Thermal Stability  Gold Metal IGN4450M50 is an internally pre-matched, gallium nitride GaN high electron mobility transistor (HEMT). This part is designed for

Original

IGN4450M50 IGN4450M50 300us IGN4450M50-REV-PR1-DS-REV-D

PDF