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    IGC1 Price and Stock

    CompuCablePlusUSA MINIGC-15HB6

    DSUB GENDER CHANGER HD DB15 M/F
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    DigiKey MINIGC-15HB6 1
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    Infineon Technologies AG SIGC10T60EX7SA1

    IGBT TRENCH FS 600V 20A DIE
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    Infineon Technologies AG SIGC15T60EX1SA1

    IGBT TRENCH FS 600V 30A DIE
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    Infineon Technologies AG SIGC18T60NCX7SA1

    IGBT 3 CHIP 600V WAFER
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    Infineon Technologies AG SIGC18T60UNX1SA2

    IGBT 3 CHIP 600V WAFER
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    Find more IGC1 price and stock on Findchips.com

    IGC1 Datasheets (21)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IGC10000 Intersil CMOS Gate Arrays Scan PDF
    IGC10408 Intersil CMOS Gate Arrays Scan PDF
    IGC10408 Intersil Shortform Data Book 1983/4 Short Form PDF
    IGC10756 Intersil Shortform Data Book 1983/4 Short Form PDF
    IGC10756 Intersil CMOS Gate Arrays Scan PDF
    IGC109T120T6RH Infineon Technologies IGBT Chips; Technology: IGBT 4 High Power; VDS (max): 1,200.0 V; IC (max): 110.0 A; VCE(sat) (max): 2.0 V; VGE(th) (min): 5.0 V; Original PDF
    IGC109T120T6RL Infineon Technologies IGBT Chips; Technology: IGBT 4 Low Power; VDS (max): 1,200.0 V; IC (max): 110.0 A; VCE(sat) (max): 2.05 V; VGE(th) (min): 5.0 V; Original PDF
    IGC109T120T6RM Infineon Technologies IGBT Chips; Technology: IGBT 4 Medium Power; VDS (max): 1,200.0 V; IC (max): 110.0 A; VCE(sat) (max): 2.05 V; VGE(th) (min): 5.0 V; Original PDF
    IGC11500 Intersil Shortform Data Book 1983/4 Short Form PDF
    IGC11500 Intersil CMOS Gate Arrays Scan PDF
    IGC11T120T6L Infineon Technologies IGBT Chips; Package: --; Technology: IGBT 4 Low Power; VDS (max): 1,200.0 V; IC (max): 8.0 A; VCE(sat) (max): 2.1 V; VGE(th) (min): 5.0 V; Original PDF
    IGC11T120T8LX1SA1 Infineon Technologies Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 1200V 8A SAWN ON FOIL Original PDF
    IGC13T120T6L Infineon Technologies IGBT Chips; Technology: IGBT 4 Low Power; VDS (max): 1,200.0 V; IC (max): 10.0 A; VCE(sat) (max): 2.1 V; VGE(th) (min): 5.0 V; Original PDF
    IGC13T120T8LX1SA1 Infineon Technologies Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 1200V 10A SAWN ON FOIL Original PDF
    IGC142T120T6RH Infineon Technologies IGBT Chips; Package: --; Technology: IGBT 4 High Power; VDS (max): 1,200.0 V; IC (max): 150.0 A; VCE(sat) (max): 2.0 V; VGE(th) (min): 5.0 V; Original PDF
    IGC142T120T6RL Infineon Technologies IGBT Chips; Package: --; Technology: IGBT 4 Low Power; VDS (max): 1,200.0 V; IC (max): 150.0 A; VCE(sat) (max): 2.05 V; VGE(th) (min): 5.0 V; Original PDF
    IGC142T120T6RM Infineon Technologies IGBT Chips; Package: --; Technology: IGBT 4 Medium Power; VDS (max): 1,200.0 V; IC (max): 150.0 A; VCE(sat) (max): 2.05 V; VGE(th) (min): 5.0 V; Original PDF
    IGC142T120T8RLX1SA2 Infineon Technologies Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 1200V 150A SAWN ON FOIL Original PDF
    IGC18T120T6L Infineon Technologies IGBT Chips; Package: --; Technology: IGBT 4 Low Power; VDS (max): 1,200.0 V; IC (max): 15.0 A; VCE(sat) (max): 2.1 V; VGE(th) (min): 5.0 V; Original PDF
    IGC18T120T8LX1SA2 Infineon Technologies Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 1200V 15A SAWN ON FOIL Original PDF

    IGC1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: IGC109T120T6RL IGBT4 Low Power Chip Features: • 1200V Trench + Field stop technology • low switching losses • positive temperature coefficient • easy paralleling This chip is used for: • low / medium power modules C Applications: • low / medium power drives


    Original     		PDF IGC109T120T6RL L7742C,

    IGBT infineon

    Abstract: No abstract text available
    Text: IGC10R60D TRENCHSTOPTM RC-Series for hard switching applications IGBT chip with monolithically integrated diode in packages offering space saving advantage Features: TRENCHSTOPTM Reverse Conducting RC technology for 600V applications offering: • Optimised VCEsat and VF for low conduction losses


    Original     		PDF IGC10R60D 20kHz IGBT infineon

    Untitled

    Abstract: No abstract text available
    Text: IGC109T120T6RM IGBT4 Medium Power Chip Features: • 1200V Trench + Field stop technology • low switching losses • soft turn off • positive temperature coefficient • easy paralleling Chip Type VCE ICn IGC109T120T6RM 1200V 110A This chip is used for:


    Original     		PDF IGC109T120T6RM IGC109T120T6RM L7742B,

    Untitled

    Abstract: No abstract text available
    Text: IGC18T120T8L IGBT4 Low Power Chip Features: • 1200V Trench & Field stop technology  low switching losses  positive temperature coefficient  easy paralleling  Qualified according to JEDEC for target applications 1 Recommended for:  low / medium power modules


    Original     		PDF IGC18T120T8L L7633V, L7633P,

    Untitled

    Abstract: No abstract text available
    Text: IGC142T120T6RL IGBT4 Low Power Chip FEATURES: • 1200V Trench + Field Stop technology • low switching losses • positive temperature coefficient • easy paralleling This chip is used for: • low / medium power modules C Applications: • low / medium power drives


    Original     		PDF IGC142T120T6RL L7693C,

    Untitled

    Abstract: No abstract text available
    Text: IGC142T120T6RH IGBT4 High Power Chip FEATURES: • 1200V Trench + Field Stop technology • low VCEsat • soft turn off • positive temperature coefficient • easy paralleling Chip Type IGC142T120T6 RH VCE ICn 1200V 150A This chip is used for: • medium / high power modules


    Original     		PDF IGC142T120T6RH IGC142T120T6 L7693A,

    Untitled

    Abstract: No abstract text available
    Text: IGC168T170S8RM IGBT3 Power Chip Features: • 1700V Trench + Field stop technology • low switching losses • soft turn off • positive temperature coefficient • easy paralleling Chip Type VCE IC IGC168T170S8RM 1700V 150A This chip is used for: • power modules


    Original     		PDF IGC168T170S8RM IGC168T170S8RM L7793O,

    soft solder die bonding

    Abstract: No abstract text available
    Text: IGC114T170S8RM IGBT3 Power Chip Features: • 1700V Trench + Field stop technology • low switching losses • soft turn off • positive temperature coefficient • easy paralleling Chip Type VCE IC IGC114T170S8RM 1700V 100A This chip is used for: • power modules


    Original     		PDF IGC114T170S8RM IGC114T170S8RM L7783O, soft solder die bonding

    Untitled

    Abstract: No abstract text available
    Text: IGC142T120T8RM IGBT4 Medium Power Chip Features: • 1200V Trench & Field stop technology  low switching losses  soft turn off  positive temperature coefficient  easy paralleling  Qualified according to JEDEC for target applications Chip Type


    Original     		PDF IGC142T120T8RM IGC142T120T8RM L7693U, L7693O,

    IGC109T120T8RM

    Abstract: No abstract text available
    Text: IGC109T120T8RM IGBT4 Medium Power Chip Features: • 1200V Trench & Field stop technology  low switching losses  soft turn off  positive temperature coefficient  easy paralleling  Qualified according to JEDEC for target applications Chip Type


    Original     		PDF IGC109T120T8RM IGC109T120T8RM L7742U, L7742O,

    Untitled

    Abstract: No abstract text available
    Text: IGC109T120T6RM IGBT4 Medium Power Chip Features: • 1200V Trench + Field stop technology • low switching losses • soft turn off • positive temperature coefficient • easy paralleling Chip Type VCE ICn IGC109T120T6 RM 1200V 110A This chip is used for:


    Original     		PDF IGC109T120T6RM IGC109T120T6 L7742B,

    Untitled

    Abstract: No abstract text available
    Text: IGC142T120T6RL IGBT4 Low Power Chip FEATURES: • 1200V Trench + Field Stop technology • low switching losses • positive temperature coefficient • easy paralleling This chip is used for: • low / medium power modules C Applications: • low / medium power drives


    Original     		PDF IGC142T120T6RL IGC142T120T6 L7693C,

    Untitled

    Abstract: No abstract text available
    Text: IGC18T120T8L IGBT4 Low Power Chip Features: • 1200V Trench & Field stop technology  low switching losses  positive temperature coefficient  easy paralleling  Qualified according to JEDEC for target applications 1 Recommended for:  low / medium power modules


    Original     		PDF IGC18T120T8L L7633V, L7633P,

    Untitled

    Abstract: No abstract text available
    Text: IGC18T120T8Q High Speed IGBT in Trench and Fieldstop Technology Features: • 1200V Trench + Field stop technology  low switching losses  positive temperature coefficient  easy paralleling Recommended for:  discrete components C Applications:  high frequency drives


    Original     		PDF IGC18T120T8Q L7633Q, L7633S,

    Untitled

    Abstract: No abstract text available
    Text: IGC15T60Q High Speed IGBT3 Chip Features: • 600V Trench & Field Stop technology  high speed switching series third generation  low VCE sat  low EMI  low turn-off losses  positive temperature coefficient  qualified according to JEDEC for target


    Original     		PDF IGC15T60Q L7558C,

    Untitled

    Abstract: No abstract text available
    Text: IGC19T60Q High Speed IGBT3 Chip Features: • 600V Trench & Field Stop technology  high speed switching series third generation  low VCE sat  low EMI  low turn-off losses  positive temperature coefficient  qualified according to JEDEC for target


    Original     		PDF IGC19T60Q L7448C,

    Untitled

    Abstract: No abstract text available
    Text: IGC193T120T8RM IGBT4 Medium Power Chip Features: • 1200V Trench & Field stop technology  low switching losses  soft turn off  positive temperature coefficient  easy paralleling  Qualified according to JEDEC for target applications Chip Type


    Original     		PDF IGC193T120T8RM IGC193T120T8RM L7713U, L7713O,

    Untitled

    Abstract: No abstract text available
    Text: IGC189T120T6RL IGBT4 Low Power Chip Features: • 1200V Trench + Field Stop technology • low switching losses • positive temperature coefficient • easy paralleling This chip is used for: • low / medium power modules C Applications: • low / medium power drives


    Original     		PDF IGC189T120T6RL L7703C,

    Untitled

    Abstract: No abstract text available
    Text: IGC11T120T8L IGBT4 Low Power Chip Features: • 1200V Trench & Field stop technology  low switching losses  positive temperature coefficient  easy paralleling  Qualified according to JEDEC for target applications 1 Recommended for:  low / medium power modules


    Original     		PDF IGC11T120T8L L7613V, L7613P,

    Untitled

    Abstract: No abstract text available
    Text: IGC142T120T6RH IGBT4 High Power Chip FEATURES: • 1200V Trench + Field Stop technology • low VCEsat • soft turn off • positive temperature coefficient • easy paralleling Chip Type VCE ICn IGC142T120T6RH 1200V 150A This chip is used for: • medium / high power modules


    Original     		PDF IGC142T120T6RH IGC142T120T6RH L7693A,

    Untitled

    Abstract: No abstract text available
    Text: IGC114T170S8RM IGBT3 Power Chip Features: • 1700V Trench + Field stop technology  low switching losses  soft turn off  positive temperature coefficient  easy paralleling Chip Type VCE IC IGC114T170S8RM 1700V 100A This chip is used for:  power modules


    Original     		PDF IGC114T170S8RM IGC114T170S8RM L7783O, L7783T, L7783E,

    Untitled

    Abstract: No abstract text available
    Text: IGC168T170S8RH IGBT3 Power Chip Features: • 1700V Trench + Field stop technology  low switching losses and saturation losses  soft turn off  positive temperature coefficient  easy paralleling Chip Type VCE IC IGC168T170S8RH 1700V 150A This chip is used for:


    Original     		PDF IGC168T170S8RH IGC168T170S8RH L7793N, L7793U, L7793F,

    Untitled

    Abstract: No abstract text available
    Text: IGC142T120T8RL IGBT4 Low Power Chip Features: • 1200V Trench & Field stop technology  low switching losses  positive temperature coefficient  easy paralleling  Qualified according to JEDEC for target applications Recommended for:  low / medium power modules


    Original     		PDF IGC142T120T8RL L7693V, L7693P,

    IGC13T120T8L

    Abstract: No abstract text available
    Text: IGC13T120T8L IGBT4 Low Power Chip Features: • 1200V Trench & Field stop technology  low switching losses  positive temperature coefficient  easy paralleling  Qualified according to JEDEC for target applications 1 Recommended for:  low / medium power modules


    Original     		PDF IGC13T120T8L L7623V, L7623P, IGC13T120T8L