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    IGBT WIT FREQUENCY RANGE Search Results

    IGBT WIT FREQUENCY RANGE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    IGBT WIT FREQUENCY RANGE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    application of microprocessor in washing machine

    Abstract: DC SERVO MOTOR closed loop pwm speed control 3 phase inverter ic ir2136 closed loop control of servo motor in microcontroller IRMCK201 IRMCK201 IC circuit diagram ac motor servo control circuit diagram IRMCK202 drill motor speed control circuit C source code resolver speed motor
    Text: High Performance AC Drive by Single Chip Motion Control Engine IC Introduction of new breed of digital motion control IC :IRMCK201 and IRMCK203 Toshio Takahashi International Rectifier Director of Engineering Digital Control IC Design Center Abstract The IRMCK201 and IRMCK203 are new integrated


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    PDF IRMCK201 IRMCK203 IRMCK203 application of microprocessor in washing machine DC SERVO MOTOR closed loop pwm speed control 3 phase inverter ic ir2136 closed loop control of servo motor in microcontroller IRMCK201 IC circuit diagram ac motor servo control circuit diagram IRMCK202 drill motor speed control circuit C source code resolver speed motor

    ST T4 3660

    Abstract: 035H IRFPE30 IRG4PH40UD2-E induction cooking ge 6220 induction cooking circuits
    Text: PD - 96781 IRG4PH40UD2-E UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • UltraFast IGBT optimized for high operating frequencies up to 200kHz in resonant mode • IGBT co-packaged with HEXFREDTM ultrafast


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    PDF IRG4PH40UD2-E 200kHz O-247AD ST T4 3660 035H IRFPE30 IRG4PH40UD2-E induction cooking ge 6220 induction cooking circuits

    ST T4 3660

    Abstract: 035H IRFPE30 IRG4PH40UD2-E TO247AD package marking GC diode induction cooking circuits induction cooking
    Text: PD - 96781A IRG4PH40UD2-E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast IGBT optimized for high operating frequencies up to 200kHz in resonant mode • IGBT co-packaged with HEXFREDTM ultrafast ultra-soft-recovery anti-parallel diode for use in


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    PDF 6781A IRG4PH40UD2-E 200kHz O-247AD ST T4 3660 035H IRFPE30 IRG4PH40UD2-E TO247AD package marking GC diode induction cooking circuits induction cooking

    Untitled

    Abstract: No abstract text available
    Text: PD - 96781A IRG4PH40UD2-E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast IGBT optimized for high operating frequencies up to 200kHz in resonant mode • IGBT co-packaged with HEXFREDTM ultrafast ultra-soft-recovery anti-parallel diode for use in


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    PDF 6781A IRG4PH40UD2-E 200kHz O-247AD

    irf 3250

    Abstract: ULTRAFAST 10A 600V TD 1410 IC 035H C-150 IRFPE30 IRG4PH40UD2 IGBT 100V 200A td 1410
    Text: PD - 94739 IRG4PH40UD2 UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter


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    PDF IRG4PH40UD2 O-247AC irf 3250 ULTRAFAST 10A 600V TD 1410 IC 035H C-150 IRFPE30 IRG4PH40UD2 IGBT 100V 200A td 1410

    IGbt wit frequency range

    Abstract: t1624 035H IRFPE30
    Text: PD- 95188 IRG4PH40UDPbF UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter


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    PDF IRG4PH40UDPbF O-247AC diodIRG4PH40UDPbF IRFPE30 IGbt wit frequency range t1624 035H IRFPE30

    Untitled

    Abstract: No abstract text available
    Text: PD - 94623A IRGP35B60PD SMPS IGBT WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V VCE on typ. = 1.85V @ VGE = 15V IC = 22A C Applications • • • • Telecom and Server SMPS PFC and ZVS SMPS Circuits Uninterruptable Power Supplies Consumer Electronics Power Supplies


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    PDF 4623A IRGP35B60PD IRFPE30 IRFPE30 O-247AC

    IRGP35B60PD

    Abstract: IRFP250 IRFPE30 035H 30ETH06 ci 22A marking code
    Text: PD - 94623 IRGP35B60PD SMPS IGBT WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V VCE on typ. = 1.85V @ VGE = 15V IC = 22A C Applications • • • • Telecom and Server SMPS PFC and ZVS SMPS Circuits Uninterruptable Power Supplies Consumer Electronics Power Supplies


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    PDF IRGP35B60PD IRFPE30 O-247AC IRGP35B60PD IRFP250 IRFPE30 035H 30ETH06 ci 22A marking code

    035H

    Abstract: 8ETH06 IRFPE30 forward smps ic 200A 600V FET
    Text: PD - 95558 SMPS IGBT IRGP20B60PDPbF WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE • • • • • Telecom and Server SMPS PFC and ZVS SMPS Circuits Uninterruptable Power Supplies Consumer Electronics Power Supplies Lead-Free Equivalent MOSFET Parameters 


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    PDF IRGP20B60PDPbF O-247AC IRFPE30 035H 8ETH06 IRFPE30 forward smps ic 200A 600V FET

    Untitled

    Abstract: No abstract text available
    Text: AY_D-1W & BY_D-1W SERIES 1W,FIXED INPUT, ISOLATED & UNREGULATED DUAL / SINGLE OUTPUT DC-DC CONVERTER RoHS FEATURES PRODUCT PROGRAM 12KVDC Isolation DIP Package Temperature Range: -40°C ~ +85°C No Heat sink Required No External Component Required Low isolation capacitance


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    PDF 12KVDC AY1212D-1W BY1212D-1W 325mm

    035H

    Abstract: IRFPE30 IRGP4050PBF
    Text: PD-95743 IRGP4050PbF PDP Switch Features § § § § § § § Key parameters optimized for PDP sustain & Energy recovery applications 104A continuous collector current rating reduces component count High pulse current rating makes it ideal for capacitive load circuits


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    PDF PD-95743 IRGP4050PbF O-247AC IRFPE30 035H IRFPE30 IRGP4050PBF

    Untitled

    Abstract: No abstract text available
    Text: PD - 96233B IRG7PH42UPbF IRG7PH42U-EP INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • C Low VCE ON trench IGBT technology Low switching losses Maximum junction temperature 175 °C Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient


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    PDF 96233B IRG7PH42UPbF IRG7PH42U-EP O-247AD

    Untitled

    Abstract: No abstract text available
    Text: PD-95743 IRGP4050PbF PDP Switch Features § § § § § § § Key parameters optimized for PDP sustain & Energy recovery applications 104A continuous collector current rating reduces component count High pulse current rating makes it ideal for capacitive load circuits


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    PDF PD-95743 IRGP4050PbF IRFPE30 IRFPE30 O-247AC

    igbt based welding machine

    Abstract: IRFR12
    Text: PD - 96425 IRG7RC07SDPbF Optimized for line frequency, 50/60Hz switching frequency Features • Standard speed IGBT for switching frequency less than 1KHz • Very low VCE ON • Ultra fast soft recovery diode C VCES = 600V IC = 8.5A, TC = 100°C G VCE(on) typ. =1.2V@IC = 3A


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    PDF IRG7RC07SDPbF 50/60Hz EIA-481 EIA-541. EIA-481. igbt based welding machine IRFR12

    Untitled

    Abstract: No abstract text available
    Text: PD - 96425 IRG7RC07SDPbF Optimized for line frequency, 50/60Hz switching frequency Features • Standard speed IGBT for switching frequency less than 1KHz • Very low VCE ON • Ultra fast soft recovery diode C VCES = 600V IC = 8.5A, TC = 100°C G VCE(on) typ. =1.2V@IC = 3A


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    PDF IRG7RC07SDPbF 50/60Hz EIA-481 EIA-541. EIA-481.

    irg7ph46

    Abstract: 600v 20a IGBT driver tr marking code 25h irg7ph46uep marking code 117A IRG7PH46UPBF 8200 T igbt driver applications
    Text: PD - 96305A IRG7PH46UPbF IRG7PH46U-EP INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • C Low VCE ON trench IGBT technology Low switching losses Maximum junction temperature 175 °C Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient


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    PDF 6305A IRG7PH46UPbF IRG7PH46U-EP O-247AC O-247AD IRG7PH46NE irg7ph46 600v 20a IGBT driver tr marking code 25h irg7ph46uep marking code 117A 8200 T igbt driver applications

    irg7ph42upbf

    Abstract: marking code 5339
    Text: PD - 96233B IRG7PH42UPbF IRG7PH42U-EP INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • C Low VCE ON trench IGBT technology Low switching losses Maximum junction temperature 175 °C Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient


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    PDF 96233B IRG7PH42UPbF IRG7PH42U-EP O-247AD marking code 5339

    Untitled

    Abstract: No abstract text available
    Text: PD - 96305A IRG7PH46UPbF IRG7PH46U-EP INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • C Low VCE ON trench IGBT technology Low switching losses Maximum junction temperature 175 °C Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient


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    PDF 6305A IRG7PH46UPbF IRG7PH46U-EP O-247AD

    Untitled

    Abstract: No abstract text available
    Text: PD - 95327 IRG4PC30UDPbF UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter


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    PDF IRG4PC30UDPbF O-247AC IRFPE30

    irg7ph35upbf

    Abstract: IRG7PH35U-EP IRG7PH35U 035H C-150 IRFPE30 IRGP30B120KD-E ir igbt 1200V 40A
    Text: PD - 97479 IRG7PH35UPbF IRG7PH35U-EP INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • C Low VCE ON trench IGBT technology Low switching losses Maximum junction temperature 175 °C Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient


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    PDF IRG7PH35UPbF IRG7PH35U-EP O-247AD irg7ph35upbf IRG7PH35U-EP IRG7PH35U 035H C-150 IRFPE30 IRGP30B120KD-E ir igbt 1200V 40A

    transistor VCE 1000V

    Abstract: TO-247AC Package 12A H3 irf 150 equivalent 035H IRFPE30
    Text: PD - 95327 IRG4PC30UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter


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    PDF IRG4PC30UDPbF O-247AC IRFPE30 transistor VCE 1000V TO-247AC Package 12A H3 irf 150 equivalent 035H IRFPE30

    035H

    Abstract: IRFPE30
    Text: PD - 95327 IRG4PC30UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter


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    PDF IRG4PC30UDPbF O-247AC IRFPE30 035H IRFPE30

    Untitled

    Abstract: No abstract text available
    Text: 38C5 Group REJ03B0028-0200 Rev.2.00 Nov 23, 2005 SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER DESCRIPTION The 38C5 group is the 8-bit microcomputer based on the 740 family core technology. The 38C5 group has an LCD drive control circuit, an A/D converter, and a serial interface as additional functions.


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    PDF REJ03B0028-0200

    Untitled

    Abstract: No abstract text available
    Text: PD- 95188A IRG4PH40UDPbF UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter


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    PDF 5188A IRG4PH40UDPbF O-247AC IRFPE30