IGBT FZ 1200 R 33 KF1 Search Results

IGBT FZ 1200 R 33 KF1 Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
GT30J110SRA		Toshiba Electronic Devices & Storage Corporation	IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N)
TLP5702H		Toshiba Electronic Devices & Storage Corporation	Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L
TLP5705H		Toshiba Electronic Devices & Storage Corporation	Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L
XPN12006NC		Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 60 V, 20 A, 0.0120 Ω@10V, TSON Advance(WF)
TPN12008QM		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 80 V, 26 A, 0.0123 Ohm@10V, TSON Advance

IGBT FZ 1200 R 33 KF1 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
eupec igbt 3300v Abstract: transistor 6.z eupec FZ 900 R 12 Text: European PowerSemiconductor and Electronics Company Marketing Information FZ 1200 R 33 KF1 61,5 61,5 M8 13 190 31,5 171 57 C C C E E E 4,0 tief C 2,5 tief M4 E G 20,25 28 7 41,25 79,4 external connection to be done C C C E E E C G E external connection to	Original	220nF, eupec igbt 3300v transistor 6.z eupec FZ 900 R 12	PDF
FZ 1800 R17 KF4 Abstract: IGBT FZ 1800 KF6C FZ 800 R 12 KF6 IGBT FZ 1200 IGBT FZ 1000 FZ 1800 R 17 KF4 FD 1200 igbt F4 400 R 12 KF4 IGBT FF 300 R 12 KF2 Text: Click on outline no. IGBT High Power Modules Type * Eon / VCES Ic A VCEsat RthJC outline Eoff V V °C/W Tvj=25° mWs per arm C typ. Tvj=125° C typ Dual modules Type VCES Ic A V VCEsat Eon / Eoff RthJC outline mWs V °C/W Tvj=25° Tvj=125° per arm C typ.	Original	12KL4C FZ 1800 R17 KF4 IGBT FZ 1800 KF6C FZ 800 R 12 KF6 IGBT FZ 1200 IGBT FZ 1000 FZ 1800 R 17 KF4 FD 1200 igbt F4 400 R 12 KF4 IGBT FF 300 R 12 KF2	PDF
eupec FZ 800 r 12 kf1 Abstract: transistor GR 3200 GE DIODE 0270 Text: European PowerSemiconductor and Electronics Company Marketing Information FZ 800 R 33 KF1 61,5 18 M8 130 31,5 114 C C E E 4,0 tief E C G 2,5 tief M4 7 28 10,65 48,8 10,35 external connection to be done C C E E C G E external connection to be done VWK, April 1996	Original	peak2500 150nF, eupec FZ 800 r 12 kf1 transistor GR 3200 GE DIODE 0270	PDF
6.5kV IGBT Abstract: IGBT Power Module siemens ag infineon igbt reliability siemens IGBT 600a eupec igbt 6500v igbt 6.5kv SiC IGBT High Power Modules, PCIM Hongkong Measurement of stray inductance for IGBT IGBT module FZ siemens igbt inverters Text: 6.5kV IGBT-Modules Franz Auerbach Infineon Technologies Josef Georg Bauer (Siemens AG) Manfred Glantschnig (Infineon Technologies) Jürgen Göttert (eupec GmbH & Co KG) Martin Hierholzer (eupec GmbH & Co KG) Alfred Porst (Infineon Technologies) Daniel Reznik (Siemens AG)	Original		PDF
MN1280 Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor	Original		PDF
FS150R12KF4 Abstract: IGBT module FZ 1200 FF 400 R 14 FS200R12KF4 400R12K DIODE e2l IGBT module FZ 1200 R17kf4 igbt F4 400 R 12 KF4 IGBT FZ 800R12kF4 FZ 51 Text: IGBT High-Power Module Type Range status o f sam ple availability 4 □ production • prototype. + ENG sam ples. BMOaai? 00Q25G4 fill # 1 . Q '9 8 O 2. Q '98 IGBT High Power Modules T ype Dual modules FF200R 33KF1 FF 400 R 12 KF4 FF 400 R 16 KF4 FF 400 R 1 7 K F 4	OCR Scan	140x73mm 140x130 140x190 3M03HT 00G2S07 FS150R12KF4 IGBT module FZ 1200 FF 400 R 14 FS200R12KF4 400R12K DIODE e2l IGBT module FZ 1200 R17kf4 igbt F4 400 R 12 KF4 IGBT FZ 800R12kF4 FZ 51	PDF
IGBT FZ 1200 Abstract: IGBT module FZ 1200 IGBT FZ 800 R16KF4 IGBT FZ 1200 kf1 IGBT FZ 1800 igbt F4 400 R 12 KF4 IGBT FZ 1200 R 33 KF1 IGBT FZ 600 IGBT module FZ 400 Text: IGBT High-Power Module Type Range status o f sam ple availability 1 □ p r o d u c t io n • ■ prototype. + ENG sam ples. 34032*17 0 0 0 2 5 0 4 fill I This Material Copyrighted By Its Respective Manufacturer # 1 . Q '9 8 Q 2. Q '98 ♦ ♦ Dual modules	OCR Scan	140x73mm 140x190 000220b 00D2207 IGBT FZ 1200 IGBT module FZ 1200 IGBT FZ 800 R16KF4 IGBT FZ 1200 kf1 IGBT FZ 1800 igbt F4 400 R 12 KF4 IGBT FZ 1200 R 33 KF1 IGBT FZ 600 IGBT module FZ 400	PDF
IGBT FZ 800 Abstract: IGBT FZ 1200 IGBT FZ 1000 FZ 5.1 FZ 800 R 12 KF6 Text: V ces V O T ype ICRM VcEsat ton ts tf RthJC Tvj max > IGBT High Power Modules A V MS Tvj=25°C MS TVj=25°C ° c /w °c Tvj=25°C MS Tvj=25°C typ. typ. typ. typ. 0,0570 0,0460 150 150 ; 1H9 0,90 0,25 0,15 ! ÌH2 0,09 0,15 0,15 0,13 0,20 0,20 0,15 0,09 0,15	OCR Scan	16KF4 R17KF4 IGBT FZ 800 IGBT FZ 1200 IGBT FZ 1000 FZ 5.1 FZ 800 R 12 KF6	PDF
IGBT FZ 800 Abstract: 12KL4C 12KF4 IGBT FZ 1200 R 33 KF1 R12KL4C IGBT FZ 1200 IGBT FZ 1000 0285 007 026 FF R 1200 FZ 800 R 12 KF6 Text: IGBT High Power Modules Type V ces Ic A V IGBT-Hochleistungsmodule V cE sat V E o n / E o ff R th J C Tvj=25°c mWs °c/w ty p . T „ j= 1 2 5 ° C per ty p . a rm o u t lin e Type V cE S Ic A V * VcEsat V E o n / E o ff R fh J C T„j=25°C mWs °c/w ty p .	OCR Scan	FF400R 12KF4 12KL4C 16KF4 12KL4C IGBT FZ 800 IGBT FZ 1200 R 33 KF1 R12KL4C IGBT FZ 1200 IGBT FZ 1000 0285 007 026 FF R 1200 FZ 800 R 12 KF6	PDF
IGBT FZ 1200 kf1 Abstract: 600R16KF4 bs 1600 Text: IGBT High Power Modules Type V C ES lc I CRM V cE sa t ton ts tf R ,h jc tv , max V A A tp = 1 ms V MS MS °c/w °c tvj=25°C typ. \|js tvj=25°C typ. tvj=25°C typ. tvj=25°C typ. o u tlin e p e r a rm D ual m o d u le s ▼ FF 400 R 12 KF4 1200 400 800 2,7	OCR Scan	600R16KF4 00021SS IGBT FZ 1200 kf1 bs 1600	PDF
IGBT FZ 1200 kf1 Abstract: 600R12KF4 Text: IGBT High Power Modules Type V C ES lc I CRM V cE sa t ton ts tf R ,h jc tv , max V A A tp = 1 ms V MS MS °c/w °c tvj=25°C typ. \|js tvj=25°C typ. tvj=25°C typ. tvj=25°C typ. o u tlin e p e r a rm D ual m o d u le s ▼ FF 400 R 12 KF4 1200 400 800 2,7	OCR Scan	600R16KF4 00021SS IGBT FZ 1200 kf1 600R12KF4	PDF