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    IGBT BOOST CONVERTER Search Results

    IGBT BOOST CONVERTER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    IGBT BOOST CONVERTER Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: APTGV25H120BG Trench & Field Stop IGBT Q1, Q3: VCES = 1200V , IC = 25A @ Tc = 80°C Boost chopper + Full - Bridge NPT & Trench + Field Stop IGBT Power module K K VBUS1 Fast NPT IGBT Q5: VCES = 1200V ; IC = 50A @ Tc = 80°C VBUS2 Q1 CR5 G1 Fast NPT IGBT Q2, Q4:


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    PDF APTGV25H120BG

    IGBT full bridge

    Abstract: APTGV25H120BG IGBT 1200V 60A APT0501 APT0502 600V igbt dc to dc boost converter
    Text: APTGV25H120BG Trench & Field Stop IGBT Q1, Q3: VCES = 1200V , IC = 25A @ Tc = 80°C Boost chopper + Full - Bridge NPT & Trench + Field Stop IGBT Power module K K VBUS1 Fast NPT IGBT Q5: VCES = 1200V ; IC = 50A @ Tc = 80°C VBUS2 Q1 CR5 Q3 G3 CR3 CR1 G1 Fast NPT IGBT Q2, Q4:


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    PDF APTGV25H120BG IGBT full bridge APTGV25H120BG IGBT 1200V 60A APT0501 APT0502 600V igbt dc to dc boost converter

    Untitled

    Abstract: No abstract text available
    Text: APTGV50H60BG Trench & Field Stop IGBT Q1, Q3: VCES = 600V , IC = 50A @ Tc = 80°C Boost chopper CoolMos + full bridge NPT & Trench + Field Stop IGBT Power module K K CoolMOS™ Q5: VCES = 600V ; IC = 49A @ Tc = 25°C VBUS2 VBUS1 Q1 Q3 CR1 G1 CR5 Fast NPT IGBT Q2, Q4:


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    PDF APTGV50H60BG

    IGBT 1200V 60A

    Abstract: No abstract text available
    Text: APTGV50H120BTPG Trench & Field Stop IGBT Q1, Q3: VCES = 1200V ; IC = 50A @ Tc = 80°C Boost chopper + full bridge NPT & Trench + Field Stop IGBT Power module Q1 Q3 G1 CR5 CR1 OUT2 OUT1 Q4 Q2 E5 G2 CR2 E2 G4 NTC1 CR4 E4 NTC2 NTC Full bridge top switches : Trench + Field Stop IGBT


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    PDF APTGV50H120BTPG IGBT 1200V 60A

    Untitled

    Abstract: No abstract text available
    Text: APTGV100H60BTPG Boost chopper CoolMos + full bridge NPT & Trench + Field Stop IGBT Power module VBUS1 K Q3 G1 G3 CR1 E1 CR3 OUT2 OUT1 Q4 Q2 G5 G2 S5 E2 S CR2 G4 NTC1 CR4 E4 0/VBUS1 NTC2 Full bridge top switches : Trench + Field Stop IGBT Full bridge bottom switches : FAST NPT IGBT


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    PDF APTGV100H60BTPG

    600V igbt dc to dc boost converter

    Abstract: APT0406 APT0502 IGBT full bridge
    Text: APTGV100H60BTPG Boost chopper CoolMos + full bridge NPT & Trench + Field Stop IGBT Power module VBUS1 K Q3 G1 G3 CR1 E1 CR3 OUT1 OUT2 Q4 Q2 G5 G2 S5 E2 S CR2 G4 NTC1 CR4 E4 0/VBUS1 NTC2 Full bridge top switches : Trench + Field Stop IGBT Full bridge bottom switches : FAST NPT IGBT


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    PDF APTGV100H60BTPG 60ective 600V igbt dc to dc boost converter APT0406 APT0502 IGBT full bridge

    IGBT full bridge

    Abstract: APT0406 APT0502
    Text: APTGV50H120BTPG Trench & Field Stop IGBT Q1, Q3: VCES = 1200V ; IC = 50A @ Tc = 80°C Boost chopper + full bridge NPT & Trench + Field Stop IGBT Power module Q1 Q3 G1 CR5 CR1 OUT2 OUT1 Q4 Q2 E5 G2 CR2 E2 G4 NTC1 CR4 E4 0/VBUS1 E NTC2 Full bridge top switches : Trench + Field Stop IGBT


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    PDF APTGV50H120BTPG IGBT full bridge APT0406 APT0502

    Untitled

    Abstract: No abstract text available
    Text: IXSN 50N60BD2 IXSN 50N60BD3 HIGH Speed IGBT with HiPerFRED Short Circuit SOA Capability Buck & boost configurations IGBT Preliminary data .BD2 .BD3 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW


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    PDF 50N60BD2 50N60BD3 60-06B

    BD3 diode

    Abstract: IXSN50N60BD2 IXSN50N60BD3 50N60
    Text: IXSN 50N60BD2 IXSN 50N60BD3 HIGH Speed IGBT with HiPerFRED Short Circuit SOA Capability Buck & boost configurations IGBT Preliminary data .BD2 .BD3 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW


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    PDF 50N60BD2 50N60BD3 torqu100 60-06B BD3 diode IXSN50N60BD2 IXSN50N60BD3 50N60

    Untitled

    Abstract: No abstract text available
    Text: IXSN 50N60BD2 IXSN 50N60BD3 HIGH Speed IGBT with HiPerFRED Short Circuit SOA Capability Buck & boost configurations IGBT Preliminary data .BD2 .BD3 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW


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    PDF 50N60BD2 50N60BD3 60-06B

    Untitled

    Abstract: No abstract text available
    Text: HiPerFASTTM IGBT with HiPerFRED VCES IC25 VCE sat tfi IXSN 50N60BD2 IXSN 50N60BD3 Buck & boost configurations IGBT Preliminary data sheet .BD2 .BD3 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW


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    PDF 50N60BD2 50N60BD3 OT-227B, IXSN50N60BD2 0-06A

    50N60BD3

    Abstract: No abstract text available
    Text: HiPerFASTTM IGBT with HiPerFRED IXGN 50N60BD2 IXGN 50N60BD3 Buck & boost configurations IGBT Preliminary data sheet .BD2 Test Conditions VCES TJ = 25°C to 150°C 600 VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30


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    PDF 50N60BD2 50N60BD3 OT-227B, IXGN50N60BD2 IXGN50N60BD3 0-06A 50N60BD3

    BD3 diode

    Abstract: 50N60BD2 w a2a
    Text: HiPerFASTTM IGBT with HiPerFRED IXGN 50N60BD2 IXGN 50N60BD3 Buck & boost configurations IGBT .BD2 Symbol Test Conditions VCES TJ = 25°C to 150°C 600 TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 75


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    PDF 50N60BD2 50N60BD3 Applic100 BD3 diode w a2a

    IGBT 60A

    Abstract: ixgn50N60 60-06A IXGN50N60BD2 IXGN50N60BD3 ixgn
    Text: HiPerFASTTM IGBT with HiPerFRED IXGN 50N60BD2 IXGN 50N60BD3 Buck & boost configurations IGBT .BD2 Symbol Test Conditions VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C


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    PDF 50N60BD2 50N60BD3 OT-227B, 0-06A IGBT 60A ixgn50N60 60-06A IXGN50N60BD2 IXGN50N60BD3 ixgn

    Untitled

    Abstract: No abstract text available
    Text: HiPerFASTTM IGBT with HiPerFRED IXGN 50N60BD2 IXGN 50N60BD3 Buck & boost configurations IGBT .BD2 Symbol Test Conditions VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C


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    PDF 50N60BD2 50N60BD3 OT-227B, IXGN50N60BD2 0-06A

    SMBL1G400US60

    Abstract: No abstract text available
    Text: Preliminary SMBL1G400US60 IGBT MODULE FEATURES ' High Speed Switching ' Low Conduction Loss : VCE sat = 2.1 V (typ) ' Fast & Soft Anti-Parallel FWD ' Short circuit rated : Min 10uS at Tc=100 & APPLICATIONS Package code : 7-PM-EA ' Boost(Step Up) Converter


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    PDF SMBL1G400US60 SMBL1G400US60

    Untitled

    Abstract: No abstract text available
    Text: FBA42060 PFC SPM 45 Series for Single-Phase Boost PFC Features General Description The FBA42060 is an advanced PFC SPM® 45 module providing a fully-featured, high-performance Boost PFC Power Factor Correction input power stage for consumer, medical, and industrial applications. These modules integrate optimized gate drive of the built-in IGBT to


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    PDF FBA42060 FBA42060 E209204 UL1557) com/dwg/MO/MOD23AA

    Untitled

    Abstract: No abstract text available
    Text: FBA42060 PFC SPM 45 Series for Single-Phase Boost PFC Features General Description The FBA42060 is an advanced PFC SPM® 45 module providing a fully-featured, high-performance Boost PFC Power Factor Correction input power stage for consumer, medical, and industrial applications. These modules integrate optimized gate drive of the built-in IGBT to


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    PDF FBA42060 FBA42060 E209204 UL1557) com/dwg/MO/MOD23AA

    SMBL1G300US60

    Abstract: 300V dc dc boost converter IGBT gate drive for a boost converter
    Text: Preliminary SMBL1G300US60 IGBT MODULE FEATURES ' High Speed Switching ' Low Conduction Loss : VCE sat = 2.1 V (typ) ' Fast & Soft Anti-Parallel FWD ' Short circuit rated : Min 10uS at Tc=100 & APPLICATIONS Package code : 7-PM-BA ' Boost(Step Up) Converter


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    PDF SMBL1G300US60 SMBL1G300US60 300V dc dc boost converter IGBT gate drive for a boost converter

    300V dc dc boost converter

    Abstract: SMBL1G75US60
    Text: Preliminary SMBL1G75US60 IGBT MODULE FEATURES ' High Speed Switching ' Low Conduction Loss : VCE sat = 2.1 V (typ) ' Fast & Soft Anti-Parallel FWD ' Short circuit rated : Min 10uS at Tc=100 & APPLICATIONS Package code : 7-PM-AA ' Boost(Step Up) Converter


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    PDF SMBL1G75US60 300V dc dc boost converter SMBL1G75US60

    igbt module

    Abstract: SMBL1G150US60
    Text: Preliminary SMBL1G150US60 IGBT MODULE FEATURES ' High Speed Switching ' Low Conduction Loss : VCE sat = 2.1 V (typ) ' Fast & Soft Anti-Parallel FWD ' Short circuit rated : Min 10uS at Tc=100 & APPLICATIONS Package code : 7-PM-BA ' Boost(Step Up) Converter


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    PDF SMBL1G150US60 igbt module SMBL1G150US60

    SMBL1G50US60

    Abstract: No abstract text available
    Text: Preliminary SMBL1G50US60 IGBT MODULE FEATURES ' High Speed Switching ' Low Conduction Loss : VCE sat = 2.1 V (typ) ' Fast & Soft Anti-Parallel FWD ' Short circuit rated : Min 10uS at Tc=100 & APPLICATIONS Package code : 7-PM-AA ' Boost(Step Up) Converter


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    PDF SMBL1G50US60 10duct SMBL1G50US60

    300V dc dc boost converter

    Abstract: SMBL1G200US60
    Text: Preliminary SMBL1G200US60 IGBT MODULE FEATURES ' High Speed Switching ' Low Conduction Loss : VCE sat = 2.1 V (typ) ' Fast & Soft Anti-Parallel FWD ' Short circuit rated : Min 10uS at Tc=100 & APPLICATIONS Package code : 7-PM-BA ' Boost(Step Up) Converter


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    PDF SMBL1G200US60 300V dc dc boost converter SMBL1G200US60

    SMBL1G100US60

    Abstract: No abstract text available
    Text: Preliminary SMBL1G100US60 IGBT MODULE FEATURES ' High Speed Switching ' Low Conduction Loss : VCE sat = 2.1 V (typ) ' Fast & Soft Anti-Parallel FWD ' Short circuit rated : Min 10uS at Tc=100 & APPLICATIONS Package code : 7-PM-AA ' Boost(Step Up) Converter


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    PDF SMBL1G100US60 SMBL1G100US60