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    IGBT 500V 1A Search Results

    IGBT 500V 1A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4206F Toshiba Electronic Devices & Storage Corporation Intelligent power device 500V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    IGBT 500V 1A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor c644

    Abstract: C641 transistor C644 transistor C645 transistor IRGP440UD2 igbt 500V 15A transistor 2a 20v 5w transistor C641
    Text: Previous Datasheet Index Next Data Sheet PD - 9.1064 IRGP440UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features C VCES = 500V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes


    Original     		PDF IRGP440UD2 O-247AC C-648 transistor c644 C641 transistor C644 transistor C645 transistor IRGP440UD2 igbt 500V 15A transistor 2a 20v 5w transistor C641

    C644 transistor

    Abstract: C645 transistor transistor c644 diode C646 transistor C641 igbt 500V 15A C644 C646 C641 transistor IRGP440UD2
    Text: PD - 9.1064 IRGP440UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features C VCES = 500V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for high operating frequency over 5kHz


    Original     		PDF IRGP440UD2 O-247AC C-648 C644 transistor C645 transistor transistor c644 diode C646 transistor C641 igbt 500V 15A C644 C646 C641 transistor IRGP440UD2

    22a ic

    Abstract: D-12 IRGB440U Insulated Gate Bipolar Transistors pec 632
    Text: PD - 9.782A IRGB440U INSULATED GATE BIPOLAR TRANSISTOR Features UltraFast IGBT C • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve VCES = 500V VCE(sat) ≤ 3.0V


    Original     		PDF IRGB440U O-220AB O-220 C-592 22a ic D-12 IRGB440U Insulated Gate Bipolar Transistors pec 632

    igbt 500V 22A

    Abstract: D-12 IRGB440U irgb440
    Text: PD - 9.782A IRGB440U INSULATED GATE BIPOLAR TRANSISTOR Features UltraFast IGBT C • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve VCES = 500V VCE(sat) ≤ 3.0V


    Original     		PDF IRGB440U O-220AB 100in O-220 C-592 igbt 500V 22A D-12 IRGB440U irgb440

    C644 transistor

    Abstract: C641 transistor transistor c644 transistor C641 IRGP440UD2 C646 diode 400v 2A ultrafast
    Text: PD - 9.1064 IRGP440UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features C VCES = 500V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for high operating frequency over 5kHz


    Original     		PDF IRGP440UD2 O-247AC C-648 C644 transistor C641 transistor transistor c644 transistor C641 IRGP440UD2 C646 diode 400v 2A ultrafast

    c609 transistor

    Abstract: GC 607 TRANSISTOR transistor C607 c608 A transistor IRGP440U C605 Q
    Text: PD - 9.779A IRGP440U UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve VCES = 500V VCE(sat) ≤ 3.0V


    Original     		PDF IRGP440U O-247AC C-610 c609 transistor GC 607 TRANSISTOR transistor C607 c608 A transistor IRGP440U C605 Q

    igbt 500V 22A

    Abstract: 22a ic igbt 2A ic MARKING QG 7721-2A SCHEMATIC servo dc IGBTS igbt 500V 1A 280/TDA 7721 RECTIFIER BRIDGE 25A 600V 7721-1A
    Text: MODEL 7721 SERIES NEW PRODUCT H Bridge Power Module Drives DC motors, transformers and other loads. Paralleled ultrafast diodes included. Standard applications are off-line DC motor control and power conversion. MODELS/RANGE 7721-1A 7721-2A 22A 500V IGBTs with 8A 600V ultrafast diodes


    Original     		PDF 721-1A 721-2A O-220 O-247 igbt 500V 22A 22a ic igbt 2A ic MARKING QG 7721-2A SCHEMATIC servo dc IGBTS igbt 500V 1A 280/TDA 7721 RECTIFIER BRIDGE 25A 600V 7721-1A

    PX3544

    Abstract: PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 ice3br0665j PRIMARION px3560 ice3br4765 ICE3BR1765J
    Text: Power Management Selection Guide – February 2010 [ www.infineon.com/PowerManagementDiscretes ] [ www.infineon.com/PowerManagementICs ] 2 Introduction The Leader in Energy Efficient Technologies for Power Management Efficient energy conversion is vital for an environmentally-friendly


    Original     		PDF lead519 B152-H9345-G2-X-7600 PX3544 PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 ice3br0665j PRIMARION px3560 ice3br4765 ICE3BR1765J

    IR igbt gate driver ic

    Abstract: rectifier diode 6 amp 400 volt igbt 500V 1A OM9034SF OM9035SF bridge rectifier diode 500V bridge rectifier ic pin configuration
    Text: OM9034SF OM9035SF HALF BRIDGE, MULTI-CHIP IGBT MODULE IN A HERMETIC ISOLATED PACKAGE 500 And 1000 Volt, 30 And 25 Amp IGBT Module With Soft Recovery Rectifier, Half Bridge Configuration With Gate Drivers FEATURES • • • • • Hermetic Isolated Metal Package


    Original     		PDF OM9034SF OM9035SF IR igbt gate driver ic rectifier diode 6 amp 400 volt igbt 500V 1A OM9034SF OM9035SF bridge rectifier diode 500V bridge rectifier ic pin configuration

    Untitled

    Abstract: No abstract text available
    Text: 500V breakdown voltage Full bridge driver IC SPF5104 Positive driver system •Features ■Package Exclude gate remain dimension ●500V breakdown voltage positive power supply drive system ●Adopt bootstrap circuit system ●Encapsulate MOSFET (4pieces) and a control MIC


    Original     		PDF SPF5104

    stepper motor driver full bridge 6A

    Abstract: mosfet 600V 20A 600v 30a IGBT 20NB50 PSO-36 igbt to220 Triac 3a 600v Motor Driver IC L293D L298N IGBT full bridge
    Text: BRUSHLESS MOTOR DRIVE STMicroelectronics SOLUTIONS Mains Pre- Rectification Regulation Inverter Tacho/ Encoder Frequency Converter Servo Motor Drive Inverter Controller Tacho/ Encoder Inverter RECOMMENDED DEVICES MAIN FEATURES Mains Rectification BTW68/69 - xxx


    Original     		PDF BTW68/69 BF3506TV /10TV BHA/K3012TV 0-55A 00V/35A 000V/35A L4981A/B STW/Y/ExNA60 STTAxx06 stepper motor driver full bridge 6A mosfet 600V 20A 600v 30a IGBT 20NB50 PSO-36 igbt to220 Triac 3a 600v Motor Driver IC L293D L298N IGBT full bridge

    IGBT TEST

    Abstract: igbt 500V 1A PVD75-6 thyristor inverter
    Text: TENTATIVE PIM MODULE PVD75PVD75-6 7.5KW 200V Futures : Integrated in 3Phase Diode Bridge, Thyristor Switch, Inverter, Brake, and Snubber For 7.5kw 200V Inverter MAXMUM RATINGS Tc=25°C Item Repetitive Peak Reverse Voltage Non-Repetitive Peak Reverse Voltage


    Original     		PDF PVD75PVD75-6 PVD75-6 IGBT TEST igbt 500V 1A thyristor inverter

    IRU1239SC

    Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
    Text: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK


    Original     		PDF 100MT160PAPBF 100MT160PA 100MT160PBPBF IRU1239SC iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter

    Gate Turn-off Thyristor 600V 20A

    Abstract: INVERTER 50 kW thyristor inverter igbt 500V 15A igbt 500V 1A ac Inverter 10 kw 15KW PVD150-6 snubber thyristor thyristor 15KW
    Text: TENTATIVE PIM MODULE PVD150PVD150-6 15KW 200V Futures : Integrated in 3Phase Diode Bridge, Thyristor Switch, Inverter, Brake, and Snubber For 15kw 200V Inverter MAXMUM RATINGS Tc=25°C Item Repetitive Peak Reverse Voltage Non-Repetitive Peak Reverse Voltage


    Original     		PDF PVD150PVD150-6 PVD150-6 Gate Turn-off Thyristor 600V 20A INVERTER 50 kW thyristor inverter igbt 500V 15A igbt 500V 1A ac Inverter 10 kw 15KW snubber thyristor thyristor 15KW

    igbt 500V 50A

    Abstract: igbt 500V 1A PVD55-6 thyristor inverter
    Text: TENTATIVE PIM MODULE PVD55 PVD55-6 5.5KW 200V Futures : Integrated in 3Phase Diode Bridge, Thyristor Switch, Inverter, Brake, and Snubber For 5.5kw 200V Inverter MAXMUM RATINGS Tc=25°C Item Repetitive Peak Reverse Voltage Non-Repetitive Peak Reverse Voltage


    Original     		PDF PVD55 PVD55-6 PVD55-6 igbt 500V 50A igbt 500V 1A thyristor inverter

    24v 2a smps

    Abstract: smps 5kw KA5M02659RN KA5M0380R KA1M0680RB KA5L0365R Saft, battery Ni-Cd FDH44N50 5kw boost igbt converter KA1M0565R
    Text: C O M M U N I C A T I O N S P O W E R Taking Charge Batteries, Chargers and Chemistry Evolution in Communications by Tara Lynn Macdonald W HILE THERE ARE MANY alternative rechargeable systems, lead-acid batteries are still the primary choice. Compared with alternative solutions,


    Original     		PDF 95Vac 264Vac 1500-AEQ 144Vdc/10A. 138Vdc 60-cell, 24v 2a smps smps 5kw KA5M02659RN KA5M0380R KA1M0680RB KA5L0365R Saft, battery Ni-Cd FDH44N50 5kw boost igbt converter KA1M0565R

    Untitled

    Abstract: No abstract text available
    Text: IGBT 5.5 kW 200 V •回路図 CIRCUIT PVD55-6 ■外形寸法図 OUTLINE DRAWING （単位 Dimension：mm） 質量 Approximate Weight：400ｇ ■最大定格 Maximum Ratings（TC＝25℃） 種類 Type 3 Phase Rectification Diode Switch Thyristor


    Original     		PDF PVD55-6

    Untitled

    Abstract: No abstract text available
    Text: IGBT 7.5 kW 200 V •回路図 CIRCUIT PVD75-6 ■外形寸法図 OUTLINE DRAWING （単位 Dimension：mm） 質量 Approximate Weight：400ｇ ■最大定格 Maximum Ratings（TC＝25℃） 種類 Type 3 Phase Rectification Diode Switch Thyristor


    Original     		PDF PVD75-6

    Untitled

    Abstract: No abstract text available
    Text: IGBT 11 kW 200 V •回路図 CIRCUIT PVD110-6 ■外形寸法図 OUTLINE DRAWING （単位 Dimension：mm） 質量 Approximate Weight：400ｇ ■最大定格 Maximum Ratings（TC＝25℃） 種類 Type 3 Phase Rectification Diode Switch Thyristor


    Original     		PDF PVD110-6

    Untitled

    Abstract: No abstract text available
    Text: IGBT 15 kW 200 V •回路図 CIRCUIT PVD150-6 ■外形寸法図 OUTLINE DRAWING （単位 Dimension：mm） 質量 Approximate Weight：400ｇ ■最大定格 Maximum Ratings（TC＝25℃） 種類 Type 3 Phase Rectification Diode Switch Thyristor


    Original     		PDF PVD150-6

    AM 22A

    Abstract: igbt 2A GE 731 igbt 500V 22A
    Text: M O D E L 7 7 2 1 SERIES N EW PR O D U CT H Bridge Pow er Module Drives DC motors, transformers and other loads. Paralleled ultrafast diodes included. Standard applications are off-line DC motor control and power conversion. M O DELS/RA N G E 77 21 -1A 22 A 500V IGBTs with 8A 60 0V ultrafast diodes


    OCR Scan     		PDF O-247 Rt/R25 721-1A AM 22A igbt 2A GE 731 igbt 500V 22A

    IRF540 n-channel MOSFET

    Abstract: GES 9515 irf740,irf840 IRC540 equivalent RTV3140 IRF540 mosfet with maximum VDS 30 V IRF540 p-channel MOSFET IRLC120 AN964 IRFC9140R
    Text: I R , „-riJ- L . ,», IGBT, HEXFET, HEXSense and Logic Level Die in t e r n a t io n a l - INTERNATIONAL R E C T I F I E R StE D • QD102tib ? ■ IGBTs, HEXFET, HEXSENSE and LOGIC LEVEL HEXFET DIE ^ - q/-OS~ International Rectifier now support Die and Wafer sales from their European Headquarters at Oxted, England.


    OCR Scan     		PDF QD102t IRF540 n-channel MOSFET GES 9515 irf740,irf840 IRC540 equivalent RTV3140 IRF540 mosfet with maximum VDS 30 V IRF540 p-channel MOSFET IRLC120 AN964 IRFC9140R

    Untitled

    Abstract: No abstract text available
    Text: SHARP PC924 OPIC Photocoupler for IGBT Drive of Inverter PC924 St Lead forming type 1 type and taping reel type ( P ty p e) are also available. TUV ( VDE 0884 ) approved type is also available as an option. • Features ( P C 9 2 4 I/P C 9 2 4 P ) ■ Outline Dimensions


    OCR Scan     		PDF PC924

    600V Current Sensing N-Channel IGBT

    Abstract: Current Sensing N-Channel IGBT HGTB12N60D1C equivalent 12A600V
    Text: Œ ï ^ « 1 HGTB12N60D1C 12A, 600V Current Sensing N-Channel IGBT December 1993 Features Package • 12A.600V JEDEC TS-001AA 5 LEAD TO-220 TOP VIEW • r D S (O N) .0.27V


    OCR Scan     		PDF HGTB12N60D1C TS-001AA O-220) 100ns HGTB12N60D1C 600V Current Sensing N-Channel IGBT Current Sensing N-Channel IGBT HGTB12N60D1C equivalent 12A600V