132-gd
Abstract: 132 gd 120 24v 125A IGBT Igbt 318
Text: SKiiP 132 GD 120 - 318 CTV Absolute Maximum Ratings Symbol 4 Visol Top ,Tstg Conditions 1) Values AC, 1min Operating / stor. temperature IGBT and Inverse Diode VCES 5) VCC Operating DC link voltage IC IGBT 3) Tj IGBT + Diode IF Diode IFM Diode, tp < 1 ms
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132 gd 120
Abstract: skiip gd 120 semikron skiip 33 SKIIP DRIVER GD 132-gd semikron skiip 132 GDL
Text: SKiiP 132 GD 120 - 318 CTV Absolute Maximum Ratings Symbol Visol 4 Top ,Tstg 1) Conditions AC, 1min Operating / stor. temperature Values 3000 -25.+85 IGBT and Inverse Diode VCES VCC 5) Operating DC link voltage IC IGBT Tj 3) IGBT + Diode IF Diode IFM Diode, tp < 1 ms
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IGBT11)
Rthjs10)
132 gd 120
skiip gd 120
semikron skiip 33
SKIIP DRIVER GD
132-gd
semikron skiip 132 GDL
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENA2308A NGTB30N60L2WG N-Channel IGBT 600V, 30A, VCE sat ;1.4V, TO-247-3L with Low VF Switching Diode Features http://onsemi.com Electrical Connection • IGBT VCE(sat)=1.4V typ. (IC=30A, VGE=15V) IGBT IC=100A (Tc=25C) IGBT tf=80ns typ.
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ENA2308A
NGTB30N60L2WG
O-247-3L
A2308-8/8
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENA2308B NGTB30N60L2WG N-Channel IGBT With Low VF Switching Diode 600V, 30A, VCE sat ;1.4V http://onsemi.com Features Electrical Connection • IGBT VCE(sat)=1.4V typ. (IC=30A, VGE=15V) • IGBT IC=100A (Tc=25°C) • IGBT tf=80ns typ. • Low switching loss in higher frequency applications
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ENA2308B
NGTB30N60L2WG
A2308-8/8
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Untitled
Abstract: No abstract text available
Text: Ordering number : EN*A2308 NGTB30N60L2WG Advance Information http://onsemi.com N-Channel IGBT 600V, 100A, VCE sat ;1.4V TO-247-3L with Low VF Switching Diode Electrical Connection C(2) Features • IGBT VCE(sat)=1.4V typ. (IC=30A, VGE=15V) • IGBT tf=80ns typ.
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A2308
NGTB30N60L2WG
O-247-3L
340AM
A2308-8/8
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Fast Recovery Bridge Rectifier, 60A, 600V
Abstract: APT10035LLL APT64GA90LD30 MIC4452
Text: APT64GA90LD30 900V High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low
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APT64GA90LD30
shifte106)
Fast Recovery Bridge Rectifier, 60A, 600V
APT10035LLL
APT64GA90LD30
MIC4452
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Untitled
Abstract: No abstract text available
Text: APT64GA90LD30 APT64GA90B2D30 900V APT64GA90LD30 High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low
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APT64GA90LD30
APT64GA90B2D30
O-247
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3525 boost
Abstract: IGBT full bridge APT64GA90B MIC4452
Text: APT64GA90B 900V High Speed PT IGBT TO -2 47 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low
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APT64GA90B
3525 boost
IGBT full bridge
APT64GA90B
MIC4452
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APT64GA90B2D30
Abstract: IGBT 900v 60a Fast Recovery Bridge Rectifier, 60A, 600V APT10035LLL APT64GA90LD30 MIC4452 1000A MOS
Text: APT64GA90B2D30 APT64GA90LD30 900V APT64GA90B2D30 High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low
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APT64GA90B2D30
APT64GA90LD30
APT64GA90B2D30
IGBT 900v 60a
Fast Recovery Bridge Rectifier, 60A, 600V
APT10035LLL
APT64GA90LD30
MIC4452
1000A MOS
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IGBT 900v 60a
Abstract: Fast Recovery Bridge Rectifier, 60A, 600V MIC4452 APT64GA90B2D30 APT64GA90LD30
Text: APT64GA90LD30 APT64GA90B2D30 900V APT64GA90LD30 High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low
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APT64GA90LD30
APT64GA90B2D30
IGBT 900v 60a
Fast Recovery Bridge Rectifier, 60A, 600V
MIC4452
APT64GA90B2D30
APT64GA90LD30
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Untitled
Abstract: No abstract text available
Text: APT64GA90LD30 APT64GA90B2D30 900V APT64GA90LD30 High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low
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APT64GA90LD30
APT64GA90B2D30
APT64GA90LD30
APT64GA90B2D30
O-247
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APT64GA90B
Abstract: MIC4452 DIODE 76A
Text: APT64GA90B APT64GA90S 900V High Speed PT IGBT TO APT64GA90S POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved -2 47 through leading technology silicon design and lifetime control processes. A reduced Eoff D3PAK VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low
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APT64GA90B
APT64GA90S
APT64GA90B
MIC4452
DIODE 76A
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APT64GA90B
Abstract: MIC4452 DIODE 76A
Text: APT64GA90B APT64GA90S 900V High Speed PT IGBT TO APT64GA90S POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved -2 47 through leading technology silicon design and lifetime control processes. A reduced Eoff D3PAK VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low
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APT64GA90B
APT64GA90S
APT64GA90B
MIC4452
DIODE 76A
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Untitled
Abstract: No abstract text available
Text: APT64GA90B APT64GA90S 900V High Speed PT IGBT TO APT64GA90S POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved -24 7 through leading technology silicon design and lifetime control processes. A reduced Eoff D 3 PAK VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low
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APT64GA90B
APT64GA90S
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diode 300v 20a
Abstract: diode 20a 300v
Text: Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 20 GD 60 DLC Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom
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E3224
Abstract: diode 528
Text: Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 20 GD 60 DLC E3224 Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom
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E3224
E3224
diode 528
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Untitled
Abstract: No abstract text available
Text: Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 20 GD 60 DLC E3224 vorläufige Daten preliminary data Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung
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E3224
E3224
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E3224
Abstract: No abstract text available
Text: Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 20 GD 60 DLC E3224 Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom
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E3224
E3224
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E3224
Abstract: igbt module bsm 300
Text: Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 20 GD 60 DLC E3224 Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom
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E3224
E3224
igbt module bsm 300
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E3224
Abstract: No abstract text available
Text: Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 20 GD 60 DLC E3224 Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom
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E3224
E3224
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Untitled
Abstract: No abstract text available
Text: Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 20 GD 60 DLC vorläufige Daten preliminary data Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage
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132-gd
Abstract: TR 132-GD 132 gd 120 132Gd 120 132Gd 132 gd SKIIP GD Igbt 318
Text: SKiiP 132 GD 120 - 318 CTV Absolute Maximum Ratings Symbol Conditions 1 IGBT & Inverse Diode VCES Operating DC link voltage VCC 9) Theatsink = 25 °C IC IGBT & Diode Tj 3) 4) AC, 1 min. Visol Theatsink = 25 °C IF Theatsink = 25 °C; tp < 1 ms IFM tp = 10 ms; sin.; Tj = 150 °C
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\marketin\datenbl\skiippac\sensor\d132gd
132-gd
TR 132-GD
132 gd 120
132Gd 120
132Gd
132 gd
SKIIP GD
Igbt 318
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Untitled
Abstract: No abstract text available
Text: NGD15N41CL Product Preview Ignition IGBT 15 Amps, 410 Volts N–Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over–Voltage clamped protection for use in inductive coil drivers applications. Primary uses
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NGD15N41CL
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vla531
Abstract: inverter welding machine circuit board ups manufacturing transformer diagram 180v dc motor drive circuit diagram 300w 24v dc motor speed controller inverter 12v 220v with igbt ups circuit diagram using igbt IGBT inverter 12v 220v inverters circuit diagram igbt VLA531-01R
Text: IDC PRODUCTS for Power Electronics セレクションガイド ブック/ Selection guide book IGBTドライバ IGBT drivers IGBT drivers システム電源 DC-DCコンバータ Power units DC‐DC converters -1- February 2009 目次 / INDEX ●イサハヤ電子製品群の展開領域
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