Untitled
Abstract: No abstract text available
Text: PRELIMINARY IDT10506LL IDT100506LL IDT101506LL SELF-TIMED BiCMOS ECL STATIC RAM 256K 64K x 4-BIT STRAM FEATURES: • 65,536-words x 4-bit organization • Self-Timed Write, with latches on inputs and latches on outputs • Balanced Read/Write cycle time: 15/18ns
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536-words
15/18ns
IDT10506LL
IDT100506LL
IDT101506LL
IDT10506LL,
IDT101506LL
536-bit
ECL-10K
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY IDT10506LL IDT100506LL IDT101506LL SELF-TIMED BiCMOS ECL STATIC RAM 256K 64K x 4-BIT STRAM Integ rated D evice Technology, in c. FEATURES: • 65,536-words x 4-bit organization • Self-Timed Write, with latches on inputs and latches on outputs
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IDT10506LL
IDT100506LL
IDT101506LL
536-words
15/18ns
IDT10506LL,
IDT101506LL
536-bit
ECL-10K
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S1272
Abstract: s1273 D2221 A7AE
Text: HIGH-SPEED BiCMOS ECL SELF-TIMED STATIC RAM 256K 64K x 4-BIT ADVANCE INFORMATION IDT 10506LL IDT 100506LL FEATURES: DESCRIPTION: • 65,536-words x 4-bit organization The IDT10506LL and IDT100506LL are 262,144-bit high-speed BICEMOS ECL static random access memory organized as
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536-words
800mW
10506LL
100506LL
IDT10506LL
IDT100506LL
144-bit
ECL-10K
ECL-100K
S12-72
S1272
s1273
D2221
A7AE
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