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    Samtec Inc IDSS-08-D-02.00-G

    CABLE ASSY 8 POS SKT-SKT 2.00"
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    DigiKey IDSS-08-D-02.00-G Bulk 460 1
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    Samtec Inc IDSS-04-S-08.00

    INSULATION DISPLACEMENT SOCKET C
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    DigiKey IDSS-04-S-08.00 Bulk 161 1
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    Avnet Abacus IDSS-04-S-08.00 4 Weeks 1
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    Samtec Inc IDSS-30-D-28.00-G

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    DigiKey IDSS-30-D-28.00-G Bulk 98 1
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    Samtec Inc IDSS-14-D-65.00-T-G

    INSULATION DISPLACEMENT SOCKET C
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    DigiKey IDSS-14-D-65.00-T-G Bulk 95 1
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    Samtec Inc IDSS-05-S-05.75-T-ST4

    CABLE ASSEM 5POS
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    DigiKey IDSS-05-S-05.75-T-ST4 Bulk 81 1
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    Mouser Electronics IDSS-05-S-05.75-T-ST4 786
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    IDSS Datasheets (15)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IDSS-02-S-03.50-ST4 Samtec Cable Assemblies - Rectangular Cable Assemblies - INSULATION DISPLACEMENT SOCKET C Original PDF
    IDSS-03-D-18.00 Samtec Rectangular Cable Assemblies, Cable Assemblies, CABLE RIBBON SOCKET SGNL 3 PIN Original PDF
    IDSS-04-D-06.00 Samtec Cable Assemblies - Rectangular Cable Assemblies - INSULATION DISPLACEMENT SOCKET C Original PDF
    IDSS-05-S-05.75-T-ST4 Samtec Rectangular Cable Assemblies, Cable Assemblies, CABLE ASSEM 5POS Original PDF
    IDSS-08-D-05.00-G Samtec Cable Assemblies - Rectangular Cable Assemblies - CABLE ASSEM .100 8POS 5 GRAY Original PDF
    IDS-S-08-D-05.00-G Samtec Rectangular Cable Assemblies, Cable Assemblies, CABLE ASSEM .100 8POS 5 GRAY Original PDF
    IDSS-08-D-06.00 Samtec Cable Assemblies - Rectangular Cable Assemblies - INSULATION DISPLACEMENT SOCKET C Original PDF
    IDSS-09-D-05.00-G Samtec Cable Assemblies - Rectangular Cable Assemblies - INSULATION DISPLACEMENT SOCKET C Original PDF
    IDSS-14-D-22.00-R Samtec Rectangular Cable Assemblies, Cable Assemblies, CABLE ASSEM 14POS Original PDF
    IDSS-16-D-05.00-G Samtec Rectangular Cable Assemblies, Cable Assemblies, CABLE ASSEM .1" 16POS F-F 5" Original PDF
    IDSS-16-D-06.00 Samtec Cable Assemblies - Rectangular Cable Assemblies - INSULATION DISPLACEMENT SOCKET C Original PDF
    IDSS-16-D-09.00 Samtec Rectangular Cable Assemblies, Cable Assemblies, CABLE ASSEM .1" 16POS F-F 9" Original PDF
    IDSS-16-D-12.00-G Samtec Cable Assemblies - Rectangular Cable Assemblies - INSULATION DISPLACEMENT SOCKET C Original PDF
    IDSS-16-D-24.00-G Samtec Cable Assemblies - Rectangular Cable Assemblies - INSULATION DISPLACEMENT SOCKET C Original PDF
    IDSS-17-D-18.00 Samtec Rectangular Cable Assemblies, Cable Assemblies, CABLE ASSEMBLY SOCKET 17 POSITIO Original PDF

    IDSS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: TK8A25DA MOSFETs Silicon N-Channel MOS π-MOS TK8A25DA 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.41 Ω (typ.) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 250 V) (3) Enhancement mode: Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA)


    Original     		PDF TK8A25DA O-220SIS

    TK72A

    Abstract: No abstract text available
    Text: TK72A12N1 MOSFETs Silicon N-channel MOS U-MOS-H TK72A12N1 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 3.7 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 120 V)


    Original     		PDF TK72A12N1 O-220SIS TK72A

    k4a60db

    Abstract: K4A60 K4A60D
    Text: TK4A60DB TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK4A60DB Switching Regulator Applications Unit: mm A 3.9 3.0 Low drain-source ON-resistance: RDS (ON) = 1.6 Ω(typ.) High forward transfer admittance: |Yfs| = 2.2 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600V)


    Original     		PDF TK4A60DB k4a60db K4A60 K4A60D

    tk12a65d

    Abstract: tk12a65
    Text: TK12A65D MOSFETs Silicon N-Channel MOS π-MOS TK12A65D 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.46 Ω (typ.) (2) High forward transfer admittance: |Yfs| = 6.0 S (typ.) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 650 V)


    Original     		PDF TK12A65D O-220SIS tk12a65d tk12a65

    Untitled

    Abstract: No abstract text available
    Text: TJ150F04M3L MOSFETs Silicon P-Channel MOS U-MOS TJ150F04M3L 1. Applications • Automotive • Relay Drivers • DC-DC Converters • Motor Drivers 2. Features (1) Low drain-source on-resistance: RDS(ON) = 2.2 mΩ (typ.) (VGS = -10 V) (2) Low leakage current: IDSS = -10 µA (max) (VDS = -40 V)


    Original     		PDF TJ150F04M3L O-220SM

    Untitled

    Abstract: No abstract text available
    Text: TK65E10N1 MOSFETs Silicon N-channel MOS U-MOS-H TK65E10N1 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 4.0 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V)


    Original     		PDF TK65E10N1 O-220

    TJ9A10M3

    Abstract: No abstract text available
    Text: TJ9A10M3 MOSFETs Silicon P-Channel MOS U-MOS TJ9A10M3 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 120 mΩ (typ.) (VGS = -10 V) (2) Low leakage current: IDSS = -10 µA (max) (VDS = -100 V)


    Original     		PDF TJ9A10M3 O-220SIS TJ9A10M3

    TK70J04K3Z

    Abstract: No abstract text available
    Text: TK70J04K3Z MOSFETs Silicon N-channel MOS U-MOS TK70J04K3Z 1. Applications • Switching Voltage Regulators • DC-DC Converters • Motor Drivers 2. Features (1) Low drain-source on-resistance: RDS(ON) = 3.2 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V)


    Original     		PDF TK70J04K3Z TK70J04K3Z

    K3407

    Abstract: No abstract text available
    Text: 2SK3407 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3407 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 0.48 Ω (typ.) • High forward transfer admittance: |Yfs| = 7.5 S (typ.) • Low leakage current: IDSS = 100 µA (max) (VDS = 450 V)


    Original     		PDF 2SK3407 K3407

    2SK36

    Abstract: No abstract text available
    Text: 2SK369 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK369 For Low Noise Audio Amplifier Applications • Unit: mm Suitable for use as first stage for equalizer and MC head amplifiers. • High |Yfs|: |Yfs| = 40 mS typ. (VDS = 10 V, VGS = 0, IDSS = 5 mA)


    Original     		PDF 2SK369 2SK36

    2SK170 to92

    Abstract: 2SJ74
    Text: 2SJ74 TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ74 Low Noise Audio Amplifier Applications Unit: mm • Recommended for first stages of EQ amplifiers and M.C. head amplifiers. • High |Yfs|: |Yfs| = 22 mS typ. (VDS = −10 V, VGS = 0, IDSS = −3 mA)


    Original     		PDF 2SJ74 2SK170 SC-43 2SK170 to92 2SJ74

    PACKAGE DIMENSIONS SOIC-8 NB CASE 751-07 ISSUE AA

    Abstract: PACKAGE DIMENSIONS SOIC-8 NB CASE 751-07 NTMS4404N NTMS4404NR2
    Text: NTMS4404N Power MOSFET 30 V, 12 A, Single N−Channel, SO−8 Features • High Density Power MOSFET with Ultra Low RDS on for Higher • • • Efficiency Miniature SO−8 Surface Mount Package Saving Board Space IDSS Specified at Elevated Temperature Diode Exhibits High Speed, Soft Recovery


    Original     		PDF NTMS4404N NTMS4404N/D PACKAGE DIMENSIONS SOIC-8 NB CASE 751-07 ISSUE AA PACKAGE DIMENSIONS SOIC-8 NB CASE 751-07 NTMS4404N NTMS4404NR2

    samtec lc

    Abstract: 1-800-SAMTEC-9 esq 120 13
    Text: F-203 Through T/H Hole TSW .025" SQ TERMINAL STRIPS SERIES SMT See TSM Mates with: SSW, SSQ, ESW, ESQ, BCS, BSW, IDSD, IDSS, CES, SLW TYPE STRIP SPECIFICATIONS TSW Insulator Material: Black Glass Filled Polyester Terminal Material: Phosphor Bronze Operating Temp


    Original     		PDF F-203 1-800-SAMTEC-9 samtec lc esq 120 13

    EFA240B-100F

    Abstract: No abstract text available
    Text: Excelics EFA240B-100F DATA SHEET Low Distortion GaAs Power FET '  7<3   7<3  All Dimensions In mils ELECTRICAL CHARACTERISTICS Ta = 25 OC SYMBOLS P1dB G1dB PAE PARAMETERS/TEST CONDITIONS Output Power at 1dB Compression Vds=8V, Ids=50% Idss Gain at 1dB Compression


    Original     		PDF EFA240B-100F EFA240B-100F

    Untitled

    Abstract: No abstract text available
    Text: TK40J60U MOSFETs Silicon N-Channel MOS DTMOS TK40J60U 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.065 Ω (typ.) (2) High forward transfer admittance: |Yfs| = 30 S (typ.) (3) Low leakage current: IDSS = 100 µA (max) (VDS = 600 V)


    Original     		PDF TK40J60U

    Untitled

    Abstract: No abstract text available
    Text: TPCA8085 MOSFETs Silicon N-channel MOS U-MOS TPCA8085 1. Applications • Motor Drivers • Switching Voltage Regulators 2. Features (1) Small, thin package (2) Low drain-source on-resistance: RDS(ON) = 4.6 mΩ (typ.) (VGS = 10 V) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V)


    Original     		PDF TPCA8085

    Untitled

    Abstract: No abstract text available
    Text: TK90S06N1L MOSFETs Silicon N-channel MOS U-MOS-H TK90S06N1L 1. Applications • Automotive • Motor Drivers • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 2.7 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V)


    Original     		PDF TK90S06N1L

    Untitled

    Abstract: No abstract text available
    Text: TK35E08N1 MOSFETs Silicon N-channel MOS U-MOS-H TK35E08N1 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 10.0 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 80 V)


    Original     		PDF TK35E08N1 O-220

    TK15A

    Abstract: TK15A20D
    Text: TK15A20D MOSFETs Silicon N-Channel MOS π-MOS TK15A20D 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.12 Ω (typ.) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 200 V) (3) Enhancement mode: Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA)


    Original     		PDF TK15A20D O-220SIS TK15A TK15A20D

    Untitled

    Abstract: No abstract text available
    Text: TK5A45DA MOSFETs Silicon N-Channel MOS π-MOS TK5A45DA 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 1.52 Ω (typ.) (2) High forward transfer admittance: |Yfs| = 1.5 S (typ.) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 450 V)


    Original     		PDF TK5A45DA O-220SIS

    2sj111 fet

    Abstract: 2SJ111 2sj74 2SK170 2SK30ATM 2SK30A 2SJ110
    Text: ufcUM -3 o to 3: O a to N ro cn o > JUNCTION FET < |Yfs| T Y P . (MIN. IDSS Type No. A p p lic a t io n N-Channel General Purpose P-Channel V GDS 'G Pd (V) (mA) (mW) (mA) V DS Vqs (V) (V) NF M AX. Crss T Y P . V DS V GS V (mS) (V) (V) (pF) (V) d S F (MHz)


    OCR Scan     		PDF 2SK30ATM 2SK117 2SK170 2SK246 2SK362 2SK363 2SK364 2SK369 2SK373 2SJ74 2sj111 fet 2SJ111 2SK30A 2SJ110

    DN2620

    Abstract: No abstract text available
    Text: DN2620 DN2624 Advanced Information N-Channel Depletion-Mode Vertical DMOS FETs Ordering Information Order Num ber / Package BV dsx / B^DGX ^DS ON Idss (max) (min) TO-92 DICE 200V 4.0Q 600mA DN2620N3 DN2620ND 240V 4.0Q 600mA DN2624N3 DN2624ND Advanced DMOS Technology


    OCR Scan     		PDF DN2620 DN2624 600mA 600mA DN2620N3 DN2624N3 DN2620ND DN2624ND 300mA, 300jxs

    UC754

    Abstract: UC758
    Text: ATCdL LOW P O W E R FIELD E FFEC T T R A N S IS T O R S IMliOMtL ¡PÖJM^©©!! G^tgKlÄMilL Type Number •BVDgo or Case BVgss Style Min (T O - Geometry (V) Ciss Max (pF) Crss Max (PF) Vgs (off) Min Max (V) lgss Max (nA) Yls Min Max (uMhos) Idss Min Max


    OCR Scan     		PDF KK4302 KK4303 KK4304 UC100 UC105 UC110 UC120 UC130 UC135 UC701 UC754 UC758

    Untitled

    Abstract: No abstract text available
    Text: TSW—209-09—S-S—RJ arrifec TSW-108—05—S-Q TSW-116-11—G-S I'i i. Mates vith: SSW. 5 SQ. ESW. ESQ. BCS. E 5W. IDSD. IDSS. CES, S _W TYPE STRIP NO. PINS PER ROW PIN CENTERS 11 Precision Drawn Terminal Strips H " I ^ f k i i i _ S ta n d a rd I O V V “ S trip


    OCR Scan     		PDF TSW-116-11-- TSW-108-- m1-1502