Untitled
Abstract: No abstract text available
Text: in te i 82C54 CHMOS PROGRAMMABLE INTERVAL TIMER Compatible with all Intel and most other microprocessors • Three independent 16-bit counters ■ Low Power CHMOS — Ice = 10 mA @ 8 MHz Count frequency High Speed, “Zero Wait State” Operation with 8 MHz 8086/88 and
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82C54
16-bit
82C54-2
24-Pin
28-Pin
82C54
82C52-2
EL17S
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ICE 47E
Abstract: oSC-70 7MB4066
Text: INTE G R A T E D DEV ICE 47E D B 4355 7 7 1 O Q I Q I G b b B I I D T PRELIMINARY IDT7MB4065 IDT7MB4066 256K x 20/256K x 16 BiCMOS/CMOS STATIC RAM MODULES - q é r Z ' i - IM Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • High density 256K x 20 /256 K x 16 B iC M O S /C M O S static
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IDT7MB4065
IDT7MB4066
20/256K
48-pin
str20
ICE 47E
oSC-70
7MB4066
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Untitled
Abstract: No abstract text available
Text: L A T T IC E S E M I C O N D U C T O R 47E D Lattice •■■■■■ FEATURES ■ SBôbSq^ 0002120 1 H L A T GAL26CV12/883 High Performance E2CMOS PLD T - < / é - / 9 - 0 7 Generic Array Logic FU N C T IO N A L B L O C K DIAGRAM • HIGH PERFORMANCE E*CMOS* TECHNOLOGY
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GAL26CV12/883
AL26CV12
MIL-STD-883
28-Pin
GAL26CV12-20LD/883
GAL26CV12-20LR/883
GAL26CV12-25LD/883
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1032T
Abstract: 2416TXVB Alphanumeric 14 SEGMENT DUAL Intelligent Display 2416 Display MDL 2416C
Text: SIE M EN S A K T I E N G E S E L L S C H A F 47E ]> • 0 5 3 5 b O S DOBbRfiO b H S I E G S IE M E N S MDL 2416C T-m-tf MDL 2416TXV MDL 2416TXVB .15" Red, 4-Digit, 16 Segment plus Decimal HI-REL/Military Alphanumeric Intelligent Display with Memory/Decoder/Driver
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2416C
2416TXV
2416TXVB
IL-STD-883,
2416C/TXVrrXVB
1032T
2416TXVB
Alphanumeric 14 SEGMENT DUAL Intelligent Display
2416 Display
MDL 2416C
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ICE 47E
Abstract: No abstract text available
Text: FUJITSU MICROELECTRONICS 47E I> • 3?in7b2 GOlflTb'i 5 ■ F M I July 1990 Edition 2.0 — DATASHEET- , MB8410 0 0 -80/- 80U -10/- 10L/-12/- 12L CMOS 1M LOW POWER SRAM 128K Words x 8 Bits CMOS Static Random Access Memory with Data Retention The Fujitsu MB841000 is a 131,072 words x 8 bits static random access memory
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MB8410
10L/-12/-
MB841000
T-46-23-14
MB841000-80/-80L
MB841000-10/-10L
MB841000-12/-12L
32-LEAD
32007S
ICE 47E
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MPC 2120
Abstract: No abstract text available
Text: SIEMENS AKTIENGESELLSCHAF 47E D S IE M E N S re d YELLOW h igh EFF. RED HIGH EFF. GREEN fl23SbGS OOSb^^a 3 • SIEG MSD201OTXV/TXVB Hsa MSD2011TXV/TXVB MSD2012TXV/TXVB MSD2013TXV/TXVB .150" 4-Character 5x7 Dot Matrix Serial Input Alphanumeric Military Display
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fl23SbGS
MSD201OTXV/TXVB
MSD2011TXV/TXVB
MSD2012TXV/TXVB
MSD2013TXV/TXVB
MSD201X
MSD2010
MSD2013TXV
MPC 2120
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MB81C78A-35
Abstract: MB81C78A ICE 47E fujitsu 1988 IP-28P-M
Text: FUJITSU MICROELECTRONICS 47E D BTMTTbS 0G1B77S 0 « F M I /Z April 1990 Edition 3.0 DATA SHEET _ FUJITSU MB81C78A-35/-45 CMOS 64K-BIT HIGH-SPEED SRAM 8K Words x 8 Bits High-Speed CMOS Static Random Access Memory with Automatic Power Down The Fujitsu MB81C78A is a 8,192 words x 8 bits static random access memory
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0G1B77S
MB81C78A-35/-45
64K-BIT
MB81C78A
T-46-23-12
MB81C78A-35
MB81C78A-45
C-28P-
C28054S-1C
MB81C78A-35
ICE 47E
fujitsu 1988
IP-28P-M
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SLR-50L
Abstract: 50L2 vskt
Text: SILONEX INC 47E D SXI fi2 5 5 2 7 1 0 0 0 0 3 4 “! □ NPN S IL IC O N PLANAR E P IT A X IA L PHOTODARLINGTON CO SILONEX S L R -5 0 L S E R IE S T-Ht-b3 t .004 ¿♦OOU— H General Description The S i l o n e x SLR -50L NPN s i l i c o n p l a n a r p h o to d a r l i n g t o n s e r i e s i s m ounted in a TO-18 h ig h
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SLR-50L
100wA
100uA
300ns
50L2
vskt
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siemens photo sensor
Abstract: LPT100 LPT100A LPT100B LPT110 Optical Tachometer b0627 siemens LCT H20 Z070 LPT100/A/B
Text: SIEMENS AKTIEN6ESELLSCHAF S I E M E N 47E • J> S 6235b05 0027513 2 M S I E G L P L T P 1 T 1 / 1 / 1 1 1 A A / / 1 B 1 1 B PHOTOTRANSISTOR LPT110 Package Dimensions in Inches LPT100/A/B LPT110/A/B 200 200 LPT100/A/B and LPT110/A/B Notes 1. AH leads electrically isolated iio m case
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623SbOS
LPT100/100A/100
LPT110/11
OA/11
T-m-61
LPT110
LPT100
LPT100
LPT110A/B)
LPT110
siemens photo sensor
LPT100A
LPT100B
Optical Tachometer
b0627
siemens LCT H20
Z070
LPT100/A/B
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QC67
Abstract: VY86C310
Text: V L S I VLSI TECHNOLOGY INC 47E D • TBflBBM? □ 0 D b 3 cl‘i 1 * V T I T ec h n o lo g y , in c . T - 5 2 - 3 3 ^ 7 VY86C310 RISC VIDEO/SOUND OUTPUT INTERFACE FEATURES DESCRIPTION • Pixel rate selectable a s 8, 12, 16 or 24 M H z • S e ria lize s data to 1 -, 2-, 4 - or 8-bits
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VY86C310
13-bit
QC67
VY86C310
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Untitled
Abstract: No abstract text available
Text: GOLDSTAR TECHNOLOGY I N C / I GST 4D2A757 GGG3Mt11 1 47E D T-V6-Z3 -/5' GoldStar GMM781000S-60/70/80/10 1,048,576 WORDS X 8 BIT CMOS DYNAMIC RAM MODULE Description Features The GMM781000S is 1M x 8 Dynamic RAM Mod ule organized as 1,048,576 x 8 bits and consists of
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4D2A757
GGG3Mt11
GMM781000S-60/70/80/10
GMM781000S
GM71C1000SJ)
GM71C1000SJ
781000S
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MB510
Abstract: 374C MB87001AP
Text: FUJITSU MICROELECTRONICS 47E D 7 0016031 7 • F U I ■ April 1990 Edition 3.0 FUJITSU DATA SHEET ■ MB510 2.7 GHz TWO MODULUS PRESCALER 2.7 GHz TWO MODULUS PRESCALER The Fujitsu M B510 is a u ltra high speed tw o modulus prescaler w hich enables pulse swallow fu n ctio n . The M B510 is used in Phase Locked Loop PLL
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MB510
MB510
0Dia03b
D01fiD37
FPT-08P-M01)
016jp
F08C02S-3C
374C
MB87001AP
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ICE 47E
Abstract: No abstract text available
Text: GOLDSTAR TECHNOLOGY I N C / 47E ]> 402 A7S 7 000 33^5 GoldStar □ • GST T-V6-Z3-/5 GM71C1000/L 1,048,576 WORDS x l BIT CMOS DYNAMIC RAM Description Features The GM71C1000/L is the new generation dynamic RAM organized 1,048,576 x 1 Bit. GM71C1000/L has realized higher density, higher performance
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GM71C1000/L
GM71C1000/L
ICE 47E
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s47e
Abstract: 001755 ICE 47E MB501SL
Text: FU J I T S U M I C R O E L E C T R O N I C S 47E D • 3 7 4 1 7 b E DOlVTflS 3 ■ F M I M a y 1 990 Edition 3 .0 " FUJITSU DATASHEET D MB501SL SUPER LO W POW ER TWO MODULUS PRESCALER SUPER LOW POWER TWO MODULUS PRESCALER The Fujitsu MB501SL is a super low power version of MB501 two modulus prescaler used in
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MB501SL
MB501SL
MB501
MB501L.
FPT-08P-M01
016/ft
F08002S-3C
s47e
001755
ICE 47E
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Untitled
Abstract: No abstract text available
Text: GOLDSTAR TECHNOLOGY INC/ 47E 402Ô757 D 0003517 4 •GST GoldStar GMM736512SG-70/80/10 524,288 WORDS x 36 BIT CMOS DYNAMIC RAM MODULE Description Features The GMM736512SG is a 512K word x 36 Bits dy namic RAM Module which assembled 16 pieces of 256Kx4 bit DRAMs in 20/26 pin SOJ package
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GMM736512SG-70/80/10
GMM736512SG
256Kx4
256Kx
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76C256
Abstract: GM76C256 goldstar GM76C256L-85
Text: GOLDSTAR TECHNOLOGY INC/ 47E 4D2Ô7S7 D 0003502 GoldStar GST 4 T -y ê-2 3 -IZ GM76C256/L/LL 32,768 WORDS x 8 BIT CMOS STATIC RAM Pin Configuration Description The GM76C256/L/LL is a 262,144 bit static ran dom access memory organized as 32,768 words by 8 bits using CMOS technology, and operated
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GM76C256/L/LL
GM76C256/L/LL
27JMIN
76C256
GM76C256 goldstar
GM76C256L-85
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GAL20V8A
Abstract: No abstract text available
Text: LATTICE SEMICONDUCTOR 47E D • S3ftbcm tl O O D S l O b 7 H L A T Lattice GAL20V8A/883 ■ ■■■■ T -W High Performance E2CMOS PLD Generic Array Logic -/9 -0 7 FUNCTIONAL BLOCK DIAGRAM FEATURES • HIGH PERFORMANCE E>CMOS* TECHNOLOGY — 15 ns Maximum Propagation Delay
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GAL20V8A/883
28-Pin
GAL20V8A-25QR/883
24-Pin
GAL20V8A-30LD/883
962-89840033A
5962-8984003LA
GAL20V8A-15LD/883
GAL20V8A-15LFV883
GAL20V8A
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MIL-D-87157
Abstract: D027GCH SD231X sr 2056 k
Text: SIEMENS AKTIENGESELLSCHAF SIEM EN S 47E D • ÔS3SbOS D027GCH 2 « S I E G MSD231 OTXV/TXVBt-hi-37 YELLOW MSD2311TXV/TXVB HIGH EFF. RED MSD2312TXV/TXVB HIGH EFF. GREEN MSD2313TXV/TXVB red .200" 4-Character 5x7 Dot Matrix Serial Input Alphanumeric Military Display
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D027GCH
MSD231
OTXV/TXVBt-hi-37
MSD2311TXV/TXVB
MSD2312TXV/TXVB
MSD2313TXV/TXVB
MSD231X
410mA
MSD2310
MSD2313TXWTXVB
MIL-D-87157
SD231X
sr 2056 k
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PLMJ7032
Abstract: programming epm7032 EPM7032 EPM7032J epm7032l altera epm7032 32-Macrocell EPM7032-Altera CLASSIC EPLD FAMILY EPM7032LC44-3
Text: ALTERA 47E CORP 0515372 D 0002450 ‘V £ V f <9? AL 201 EPM7032 EPLD High-Performance 32-Macrocell Device May 1992, ver. 1 Prelim inary Inform ation Data Sheet Supplement This data sheet supplem ent should be used together w ith the EPM 7032 EPLD H igh-Perform ance, 32-M acrocell D evice Data Sheet. This supplem ent
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EPM7032
32-Macrocell
10-ns
EPM7032-1
EPM7032-1.
EPM7032-1
PLMJ7032
programming epm7032
EPM7032J
epm7032l
altera epm7032
EPM7032-Altera
CLASSIC EPLD FAMILY
EPM7032LC44-3
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ICE 47E
Abstract: No abstract text available
Text: FUJITSU MICROELEC TRONICS October 1989 Edition 1.0 MB81C79B-35/-45 M7E D DATA SHEET : 374^71,2 OOlñ'i'ifi 1 • F M I _ FUpSU CMOS 72K-BIT HIGH-SPEED SRAM 8K Words x 9 Bits High-Speed CMOS Static Random Access Memory with Automatic Power Down The Fujitsu MB81C79B is a 8,192 words x 9 bits static random access memory
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MB81C79B-35/-45
72K-BIT
MB81C79B
T-46-23-12
MB81C79B-35
MB81C79B-45
DIP-28P-M04)
ICE 47E
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4-Character 5x7 Dot Matrix
Abstract: alphan MIL-D-87157 MSD2351 led matrix 5x7 28 MSD235X
Text: SIEMENS AKTIENGESELLSCHAF SIEMENS 4?E D ñP3ShDS 0GE70ED 1 H S I E 6 MSD2351TXV/TXVB high EFF. RED MSD2352TXV/TXVB HIGH EFF. GREEN MSD2353TXV/TXVB •F4V37 YELLOW Sunlight Viewable .200" 4-Character 5x7 Dot Matrix Serial Input Alphanumeric Military Display
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fl235bD5
GG270E0
MSD2351TXV/TXVB
MSD2352TXV/TXVB
MSD2353TXV/TXVB
-AV31
fl535bOS
T-41-37
450mi
MSD2351
4-Character 5x7 Dot Matrix
alphan
MIL-D-87157
led matrix 5x7 28
MSD235X
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2TT 4.00 MG
Abstract: MB81464-12 81464-12 MB81464 equivalent b1464 MB81464 DIP-18P-M03 HM50464 ZIP-20P-M01 UPD41254
Text: T-4 é>~2 ô - / 7 FUJITSU MICROELECTRONICS 47E D • 374=571=2 001*1311 7 BFNI FUJITSU October 1990 Edition 6.0 DATA SHEET MB81464-12/-15 MOS 262,144 B IT DYNAMIC RANDOM ACCESS M EM O R Y 65,536 x 4 Bits Dynamic Random Access Memory The Fujitsu MB81464 Is a fully decoded, dynamic random access memory
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MB81464-12-15
MB81464
18-pin
20-pin
Z20001S-4C
MB81464-12
MB81464-15
18-LEAD
2TT 4.00 MG
81464-12
MB81464 equivalent
b1464
DIP-18P-M03
HM50464
ZIP-20P-M01
UPD41254
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1n9142
Abstract: No abstract text available
Text: M7E D SIEM EN S • »2351,05 0 0 3 1 1 8 2 3 « S I E S s IEMENS A K T I E N G E S E L L S C H A F n,n SAB 82284 Clock Generator and Ready Interface for SAB 80286 Processors SAB 82284 up to 16 MHz SAB 82284-1 up to 20 MHz • Generates system clock fo r S A B 80286
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18-pin
623Sfc
SAB82284
fl23SbOS
82284-P
Q67020-Y162
82284-1-P
Q67020-Y167
1n9142
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DL 1416B
Abstract: 1416B garry DIP SOCKET garry socket dishwasher siemens siemens schematic codes DL1416B SN63 TP35 AN8080
Text: SIEMENS AKTIENGESELLSCHAF 47E D S 2 3 5 b G 5 OGEbfl^b b « S I E G SIEM EN S D L 1416B ^ ' 37 .160" Red, 4-Digit 16-Segment Plus Decimal ALPHANUMERIC Intelligent Display With Memory/Decoder/Driver l l So 5 5? Package Dimensions in Inches mm ^ .1 u - 16*02
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S23SbG5
1416B
16-Segment
DL 1416B
1416B
garry DIP SOCKET
garry socket
dishwasher siemens
siemens schematic codes
DL1416B
SN63
TP35
AN8080
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