16GH066V1
Abstract: No abstract text available
Text: SKiiP 16GH066V1 Absolute Maximum Ratings Symbol Conditions IGBT - Inverter L:BG *: *: *:.` L+BG $G P FE R:Z 1'7&- /2 &%68-& -?& 858&4 $- P FE ]^U_ R: Z$T P QEU R: $- P FE ]^U_ R: Z$T P Q^E R: 2? P Q M- $T MiniSKiiP 1 H-bridge inverter SKiiP 16GH066V1 Diode - Inverter
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16GH066V1
78M82
16GH066V1
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424260-70
Abstract: 424260-70 nec japan 424260-80 PD424260LE
Text: DATA SHEET MOS INTEGRATED CIRCUIT ¿¿P D 4 2 4 2 6 0 4 M-BIT DYNAMIC RAM 256 K-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description The /uPD424260 is a 262,144 words by 16 bits dynamic CMOS RAM. The fast page mode and byte read/write mode capability realize high speed access and low power consumption.
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16-BIT,
uPD424260
PD424260
44-pin
40-pin
PD424260
IR35-207-3
424260-70
424260-70 nec japan
424260-80
PD424260LE
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Untitled
Abstract: No abstract text available
Text: □PM Dense-Pac Microsystems, Inc. ^ CERAMIC 128K X DESCRIPTION: The DPS128M8 is a monolithic 128K X 8 Static Random Access Memory SRAM fabricated using CMOS technology. It is designed for use in high density, high speed, low power applications. All pins
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DPS128M8
DPS128M8
600-mil
32-pin
32-Pad
30A037-00
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Untitled
Abstract: No abstract text available
Text: NEW PRODUCT NEW PRODUCT NEW PRODUCT BZX384-C2V4 THRU BZX384-C75 ZENER DIODES SOD-323 FEATURES 012 0.3 ♦ Silicon Planar Power Zener Diodes Cathode Mark ♦ The Zener voltages are graded according to the international E 24 standard. Standard Zener voltage
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BZX384-C2V4
BZX384-C75
OD-323
OD-323
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Untitled
Abstract: No abstract text available
Text: □PM DPS256S8P Dense-Pac Microsystems, Inc. 256K X 8 CMOS SRAM MODULE O DESCRIPTION: The D P S256 S8P is a 256K X 8 high-density, low-power static RAM module comprised of two 1 2 8 K X 8 m o no lithic SR A M 's, an advanced high-speed C M O S d e co d er and deco upling
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DPS256S8P
DPS256S8P
600-mil-wide,
32-pin
S256S8P
120ns
150ns
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Untitled
Abstract: No abstract text available
Text: COPM D P S 1M S 1 6 P 1024KX 16 CMOS SRAM MODULE Dense-Pac Microsystems, Inc. O D ESC R IP TIO N : The DPS1MS16P is a 16 megabit, low-power static RAM module. The module is comprised of sixteen 128K X 8 SRAM devices and two high-speed decoders. The DPS1MS16P can
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1024KX
DPS1MS16P
1024K
2048K
DPS1MS16XP)
DPS1MS16XP
Technology30^
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Untitled
Abstract: No abstract text available
Text: DENSE-PAC 4 M egabit CMOS SRAM MI CROS YSTEMS DPS512S8N D E S C R IP T IO N : The DPS512S8N is a Military 512K X 8 high-density, low-power static RAM module comprised of four ceramic 128K X 8 monolithic SRAM's, an advanced high-speed CMOS decoder and decoupling capacitors
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DPS512S8N
DPS512S8N
TheDPS512S8N
600-mil-wide,
32-pin
PS512S8N
100ns
120ns
150ns
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Untitled
Abstract: No abstract text available
Text: P R E L IM IN A R Y M O SEL V I T E L I C V 53C 816H 5 1 2 K X 16 F A S T P A G E M O D E C M O S D Y N A M IC R A M HIGH PERFORMANCE 40 45 50 60 Max. RAS Access Tim e, tp^c 40 ns 45 ns 50 ns 60 ns Max. Column Address Access Time, ( t c ^ ) 20 ns 22 ns 24 ns
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110ns
16-bit
256Kx16
40-pin
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EDH8816C-12
Abstract: EDH8816C-15 EDH8816C-20
Text: Electronic Designs Inc. EDH8816C-12/15/20 16K x 8 SRAM CMOS Th e EDH8816C 16K x 8 uses the advanced Electronic Designs Inc. M EM ORY-PACK packaging concept which mounts several LC C memory devices on a single multilayer ceramic substrate. The ED H8816C is part of the EBM-pack
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EDH8816C-12/15/20
EDH8816C
EDH8816C
EDH8816C-12
EDH8816C-15
EDH8816C-20
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Untitled
Abstract: No abstract text available
Text: □PM Dense-Pac Microsystems, Inc. DPS256S8P 256K X 8 CMOS SRAM MODULE O DESCRIPTION: The DPS256S8P is a 256K X 8 high-density, low-power static RAM module comprised of two 128K X 8 monolithic SRAM 's, an advanced high-speed C M O S decoder and decoupling
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DPS256S8P
DPS256S8P
600-mil-wide,
32-pin
A0-A17
30A03
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Untitled
Abstract: No abstract text available
Text: M/HITE /M ICROELECTRONICS WS128K8-XCX 128Kx8 SRAM MODULE FEATURES FIG. 1 • Access Times 25 to 45nS ■ Standard M icro circ u it Draw ing, 5962-93156 PIN CONFIGURATION TOP VIEW NCC A16C A14C A12 C A7 C A6 H A 5Ü A4 C A3 C A2 C A1C ADC i/ooC 1/01 □ 1/02C
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WS128K8-XCX
128Kx8
1/02C
MIL-STD-883
06HXX
07HXX
08HXX
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Untitled
Abstract: No abstract text available
Text: Í D P M 7Dense-Pac Microsystems. Inc. 0 DPS1025 64K X 16 CMOS SRAM MODULE NOT RECOMMENDED FOR NEW DESIGNS D ESCRIPTIO N : The DPS1025 is a 64K X 8 high-speed, low-power static RAM module comprised of sixteen 64K X 1 monolithic SRAM 's, and decoupling capacitors
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DPS1025
DPS1025
Complete601
S1025
125-C
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Q001
Abstract: DHR48 V53C464
Text: bSE M O SEL-VITELIC T> m b 3 S 3 3 T l Ü G Q lflM b b T l V53C464A FAMILY HIGH PERFORMANCE; LOW POWER 64K X 4 BIT FAST PAGE MODE CMOS DYNAMIC RAM 60/60L 70/70L 80/80L 10/10L Max. RAS Access Time, tRAC 60 ns 70 ns 80 ns 100 ns Max. Column Address Access Time, (tCAA)
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b3S33Tl
V53C464A
60/60L
70/70L
80/80L
10/10L
115ns
V53C464AL
V53C464A-10
Q001
DHR48
V53C464
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Untitled
Abstract: No abstract text available
Text: DPS8M656 Dense-Pac Microsystems, Inc. 16K X 16 CMOS SRAM MODULE O D ESC R IPT IO N : The DPS8M 656 is a 256K bit Static Random Access M em ory SRA M , com plete with memory interface logic and on-board capacitors, organized as 16K X 16 bits. The DPS8M 656 is ideally suited for high performance
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DPS8M656
150ns
S8M656
120ns
16Kx16
30A01S08
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Untitled
Abstract: No abstract text available
Text: MOSEL VI TEL IC PRELIMINARY V53C516400A 4M x 4 FAST PAGE MODE CMOS DYNAMIC RAM V53C516400A 50 60 Max. R A S Access Tim e, Ì raq 50 ns 60 ns Max. Colum n Address Access Tim e, (Ì q aa ) 2 5 ns 30 ns Min. P age M ode C ycle Tim e, (tpc) 3 5 ns 4 0 ns Min. R ead /W rite C ycle Tim e, (tRC)
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V53C516400A
V53C516400A
cycles/64
24/26-pin
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Untitled
Abstract: No abstract text available
Text: DPS 1152 □PM Dense-Pac Microsystems. Inc. 64K X 18 CMOS SRAM MODULE DESCRIPTION: The DPS1152 is a high-speed, lo w -po w er static RAM m odule com prised o f eighteen 64K X 1 m on olith ic SRAM's, and decou pling capacitors surface m ounted on a co-fired ceram ic substrate.
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DPS1152
S1152
30A00606
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DD713
Abstract: Q67100-Q727
Text: SIEM ENS 256 K x 16-Bit Dynamic RAM HYB 514171BJ-60/-70 Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh HYB 514171BJL-60/-70 Advanced Information 262 144 words by 16-bit organization 0 to 70 °C operating temperature Fast access and cycle time Low Power dissipation
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16-Bit
514171BJ-60/-70
514171BJL-60/-70
ma-I/016
I/01-I/016
fl23Sb05
DD713
Q67100-Q727
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Untitled
Abstract: No abstract text available
Text: DENSE-PAC M Ï C R O S Y S T 4 Megabit High Speed CM OS SRAM D PS512S8BN E M S D E SC R IP T IO N : The DPS512S8BN is a high speed military 512K X 8 high-density, static RAM module comprised of four high speed ceramic 128KX 8 monolithic SRAM's, an advanced high-speed CMOS decoder and decoupling
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PS512S8BN
DPS512S8BN
128KX
600-mil-wide,
32-pin
512Kx8
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Untitled
Abstract: No abstract text available
Text: a WS512K8-XCX WHITE /MICROELECTRONICS 512Kx8 SRAM MODULE, SMD 5962-92078 FEATURES FIG. 1 • A c c e ss T im e s 20, 25, 35, 45ns PIN CONFIGURATION TOP VIEW A18 C A16 C A14 C A12 C A7 H A6 C A5 C A4 C A3 C A2 C A1 C AOC i/ooC 1/01 C I/02 □ GNDC 1 2 3 4 5
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WS512K8-XCX
512Kx8
IL-STD-883
512KX
06HTX
07HTX
08HTX
09HTX
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V53C664H
Abstract: mosel MT
Text: MOSEL VITELIC V53C664H 6 4 K x 16 B IT F A S T P A G E M O D E B Y TE W RITE CM OS D YN A M IC R A M V53C664H 50 55 60 Max. RAS Access Time, tRAC 50 ns 55 ns 60 ns Max. Column Address Access Time, (tCAA) 26 ns 28 ns 30 ns Min. Fast Page Mode Cycle Time, (tpc)
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V53C664H
V53C664H
110ns
16-bit
-l/016
00G3717
40-Pin
mosel MT
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EK-016-8905
Abstract: RP5B02N
Text: KOM EK-016-8905 CMOS 2k bit SRAM 256wordX8bit RP5B02N/W The RP5B02 is a 2k bit high speed CMOS static RAM organized 256 words by 8 bits and operates from a single 5 V supply. The RP5B02 has CMOS level inputs and outputs, and the outputs are 3-state output type.
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RP5B02N/W
EK-016-8905
256wordX8bit)
RP5B02
RP5B02N
RP5B02W
24PIN
300mil
EK-016-8905
RP5B02N
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Untitled
Abstract: No abstract text available
Text: KM68512ALI / ALI-L CMOS SRAM 64Kx8 Bit Industrial Temperature Range Operating Static RAM FEATURES GENERAL DESCRIPTION • Industrial Temperature Range : -40 to 8 5 “C • Fast Access Time : 70,100 ns Max. • Low Power Dissipation Standby (CMOS) : 550^W(Max.)L-Ver.
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KM68512ALI
64Kx8
385mW
KM68512ALGI/ALGI-L
32-pin
525mil)
KM68512ALTI/ALTI-L
KM68512ALI/ALI-L
288-bit
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Untitled
Abstract: No abstract text available
Text: □PM DPS32M8A Dense-Pac Microsystems. Inc. HIGH SPEED 32K X 8 CM OS SRAM MONOLITHIC ADVANCED INFORMATION DESCRIPTION: The DPS32M8A is a 32K X 8 CM OS Static Random Access Memory SRAM . The memory utilizes asynchronous circuitry and may be maintained in any
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DPS32M8A
DPS32M8A
PS32M
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Untitled
Abstract: No abstract text available
Text: DENSE-PAC 32 Megabit High Speed CMOS SRAM DPS2ME16MKn3 MICROSYSTEMS D ESCRIPTIO N : The DPS2ME16MKn3 High Speed SRAM "STACK" modules are a revolutionary new memory subsystem using Dense-Pac Microsystems' ceramic Stackable Leadless Chip Carriers SLCC . Available in straight leaded, "J" leaded or gullwing leaded
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DPS2ME16MKn3
DPS2ME16MKn3
32-Megabits
500mV
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