74HC04
Abstract: 74HCT04 CD4689 HMC270MS8G HMC284MS8G 74hct04 cd4689 GaAs IC High Isolation Positive Control Switch
Text: MICROWAVE CORPORATION HMC270MS8G v02.0701 GaAs MMIC SPDT SWITCH NON-REFLECTIVE, DC - 8.0 GHz Typical Applications Features The HMC270MS8G is ideal for DC - 8.0 GHz applications: Broadband Performance: DC - 8 GHz • CATV Non-Reflective Design • MMDS & WirelessLAN
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HMC270MS8G
HMC270MS8G
74HC04
74HCT04
CD4689
HMC284MS8G
74hct04 cd4689
GaAs IC High Isolation Positive Control Switch
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HMC309MS8
Abstract: No abstract text available
Text: HMC309MS8 MICROWAVE CORPORATION 2.4 GHz FRONT-END LNA / SWITCH IC V01.0900 FEBRUARY 2001 General Description Features The HMC309MS8 is a versatile integrated low noise amplifier LNA and transmit/receive switch front-end for 2.3 to 2.5 GHz spread spectrum
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HMC309MS8
HMC309MS8
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Untitled
Abstract: No abstract text available
Text: HMC424G16 v02.1104 ATTENUATORS - SMT 6 0.5dB LSB GaAs MMIC 6-BIT DIGITAL ATTENUATOR, DC - 3 GHz Typical Applications Features The HMC424G16 is ideal for: 0.5 dB LSB Steps to 31.5 dB • Telecom Infrastructure Single Control Line Per Bit • Military Radios, Radar & ECM
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HMC424G16
HMC424G16
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Untitled
Abstract: No abstract text available
Text: HMC424G16 v03.1006 ATTENUATORS - SMT 6 0.5dB LSB GaAs MMIC 6-BIT DIGITAL ATTENUATOR, DC - 3 GHz Typical Applications Features The HMC424G16 is ideal for: 0.5 dB LSB Steps to 31.5 dB • Telecom Infrastructure Single Control Line Per Bit • Military Radios, Radar & ECM
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HMC424G16
HMC424G16
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Untitled
Abstract: No abstract text available
Text: MICROWAVE CORPORATION HMC424LP3 v00.1101 0.5dB LSB GaAs MMIC 6-BIT DIGITAL ATTENUATOR, DC - 13 GHz 2 Typical Applications Features The HMC424LP3 is ideal for: 0.5 dB LSB Steps to 31.5 dB • Fiber Optics Single Control Line Per Bit • Microwave Radio +/- 0.5 dB Typical Bit Error
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HMC424LP3
HMC424LP3
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schematic MA 0403
Abstract: No abstract text available
Text: HMC467LP3 v00.0403 MICROWAVE CORPORATION 2 dB LSB GaAs MMIC 2-BIT DIGITAL POSITIVE CONTROL ATTENUATOR, DC - 6.0 GHz ATTENUATORS - SMT 9 Typical Applications Features The HMC467LP3 is ideal for: 2 dB LSB Steps to 6 dB • Cellular; UMTS/3G Infrastructure High IP3: +50 dBm
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HMC467LP3
HMC467LP3
schematic MA 0403
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HMC424LP3E
Abstract: HMC424LP3 HMC424
Text: HMC424LP3 / 424LP3E v08.0809 ATTENUATORS - DIGITAL - SMT 5 0.5dB LSB GaAs MMIC 6-BIT DIGITAL ATTENUATOR, DC - 13 GHz Typical Applications Features The HMC424LP3 / HMC424LP3E is ideal for: 0.5 dB LSB Steps to 31.5 dB • Basestation Infrastructure Single Control Line Per Bit
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HMC424LP3
424LP3E
HMC424LP3E
HMC424LP3
HMC424
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Untitled
Abstract: No abstract text available
Text: HMC424LP3 / 424LP3E v08.0809 ATTENUATORS - DIGITAL - SMT 5 0.5dB LSB GaAs MMIC 6-BIT DIGITAL ATTENUATOR, DC - 13 GHz Typical Applications Features The HMC424LP3 / HMC424LP3E is ideal for: 0.5 dB LSB Steps to 31.5 dB • Basestation Infrastructure Single Control Line Per Bit
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HMC424LP3
424LP3E
HMC424LP3E
HMC424LP3
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MN638S
Abstract: STA464C sk 3001s relay Re 04501 spf0001 sta509a Schottky Diode 80V 6A 2SD2633 sk 5151s SLA2403M
Text: CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. • Sanken reserves the right to make changes without further notice to any products herein
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infringement0718
H1-C01EC0-0110015TA
MN638S
STA464C
sk 3001s
relay Re 04501
spf0001
sta509a
Schottky Diode 80V 6A
2SD2633
sk 5151s
SLA2403M
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Untitled
Abstract: No abstract text available
Text: MAGNACHIP SEMICONDUCTOR INC. VFD FIP CONTROLLER/DRIVER ICs HMS81C2400 HMS81C2500 HMS81C2600 User’s Manual (Ver. 2.00) REVISION HISTORY VERSION 2.00 (SEP. 2004) This book The company name, Hynix Semiconductor Inc. changed to MagnaChip. VERSION 1.00 (JUN. 2003)
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HMS81C2400
HMS81C2500
HMS81C2600
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HMC783LP6CE
Abstract: DC 0509 SDI Microwave HMC764LP6CE HMC765LP6CE HMC807
Text: v00.0509 PLLs w/ INTEGRATED VCO - MICROWAVE VCOs OPERATING GUIDE Applicable Products: HMC764LP6CE, HMC765LP6CE, HMC783LP6CE & HMC807LP6CE General Description This operating guide applies to the specified family of IC synthesizers with integrated VCO’s. The purpose of this guide
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HMC764LP6CE,
HMC765LP6CE,
HMC783LP6CE
HMC807LP6CE
HMC783LP6CE
DC 0509
SDI Microwave
HMC764LP6CE
HMC765LP6CE
HMC807
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2N174A
Abstract: 2n174
Text: .,” un.s.195cu/113 26 JmurY 1565 !a-iwlg Smxncmm Kn.rrA.w SEXIWHLUCIOR DEVICE, ‘lllAK5151WR, Pm, Cmu.mw, mm- TYFE 2i17bA 1. 5c@PE 1.1 k. Thin w.eclric.tl.n tmr,iatnr and in in aocordanco cover. tbs detail rewiwta for a kigh+rxer, FIP germrdum with IUL-.5-195O3 except ● n oWAE*
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195cu/113
lllAK5151WR,
2i17bA
5-195O3
EIL4-19X0
WA-19X
-195m
2N174A
2n174
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2sb646
Abstract: 2SD666 2S8646 2SB646A
Text: HITACHI 2SB646, 2SB646A SILICON PNP EPiTAXIAL LOW FREQUENCY HIGH VOLTAGE AMPLIFIER Complementary pair with 2SD666/A a r 1. Hmiiier 2. Colector Base Dimension« in mm} I A B S O L U T E M AXIM UM R A T IN G S (Ta=255C Item Symbol M AXIM UM C O L L E C T O R D tSSiPA T lO H
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2SB646,
2SB646A
2SD666/A
2SB646
2S8646A
2SD666
2S8646
2SB646A
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Untitled
Abstract: No abstract text available
Text: T H IS D R AW IN G IS U N P U B L IS H E D . C O PYRIG H T 2 3 4 R E L E A S E D FO R P U B LIC A T IO N R EVISIONS -, - ALL RIG HTS R ESER VED , By - AD 00 D E S C R IP T IO N REVISED PER E C O - 1 1 - 0 0 4 9 1 7 RK HMR lMAR 11 FL=n D D C O N TA C T IDENTIFICATION
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intel 2114 static ram
Abstract: intel 2114a 2114A-4 intel 2114 2114A intel 2114 1024 4 bit 2114AL-4 2114 static ram intel 2114AL-2 2114AL-3
Text: intei 2114A 1024 X 4 BIT STATIC RAM 2114AL-1 2114AL-2 2114AL-3 2114AL-4 2114A-4 2114A-5 100 120 150 200 200 250 40 40 40 70 70 Max. Access Time ns 40 Max. Current (mA) Completely Static Memory • No Clock or Timing Strobe Required • HMOS Technology ■ Low Power, High Speed
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2114AL-1
2114AL-2
2114AL-3
2114AL-4
114A-4
114A-5
4096-bit
intel 2114 static ram
intel 2114a
2114A-4
intel 2114
2114A
intel 2114 1024 4 bit
2114 static ram intel
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5962-8776201VX
Abstract: 5962-87762012X AD7575SQ 7575T CTD 43
Text: OESC FORM 193 SEP 87 DISTRIBUTION STATEM ENT A. * U.S. GOVERNMENT HMNT1NG OfFICt I9ST — 74*-129/409! I 5962-E694 Approved lor public release; distribution is unlimited. 1. SCOPE 1.1 Scope. T h is drawing describes device requirements f o r c la s s B m ic ro c irc u its in accordance
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5962-8776201VX
AD7575SQ/883B
5962-87762012X
AD7575SE/8838
5962-8776202VX
AD7S75TQ/883B
5962-87762022X
AD7575TE/883B
AD7575SQ
7575T
CTD 43
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diode marking GDE on semiconductor
Abstract: Diode GFK 48 GFM 57, TVS diode marking GDg on semiconductor Diode GFK 32 Diode GFK 34 GEZ 44 A diode diode GEP 86 A GHR TVS Power supply GDP-002 94V-0 cem-1 94v-0
Text: is Pb TAIWAN SEMICONDUCTOR SMCJ SERIES 600 Watts Surface Mount Transient Voltage Suppressor SMC/DO-214AB RoHS COMPLIANCE Features + UL Recognized File # E-326243 -y - For surface mounted application Low profile package Built-in strain relief Glass passivated junction
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SMC/DO-214AB
E-326243
diode marking GDE on semiconductor
Diode GFK 48
GFM 57, TVS
diode marking GDg on semiconductor
Diode GFK 32
Diode GFK 34
GEZ 44 A diode
diode GEP 86 A
GHR TVS
Power supply GDP-002 94V-0 cem-1 94v-0
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ZP35
Abstract: No abstract text available
Text: tiÊÈtifI-k’i'M'J:<•]•!»i * i i Rev. 15 Apr. 25, 1990 HM574256JP/ZP-35R/40/45 2 6 2 ,144-Word x 4-Bit High Speed Dynamic Random Access Memory •^H IT A C H I The Hitachi HM574256 is a super high speed dynamic RAM organized 262,144-word x 4-bit. HM574256 has realized higher density, higher performance and
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HM574256JP/ZP-35R/40/45
144-Word
HM574256
144-word
HM574256JP/ZP-40/45
HM574256JP/ZP-35R
35ns/40ns/45ns
C89-463C6S
ZP35
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2114A-4
Abstract: BIT 3195 G intel 2114a memory ic 2114a V/2114A
Text: in te i 2114A 1024 X 4 BIT STATIC RAM 2114AL-1 2114AL-2 2114AL-3 2114AL-4 2114A-4 2114A-5 100 120 150 200 200 250 40 40 40 40 70 70 Max. Access Tima na Max. Currant (mA) • HMOS Technology ■ Low Power, High Speed ■ Directly TTL Compatible: All Inputs
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2114AL-1
2114AL-2
2114AL-3
2114AL-4
114A-4
114A-5
4096-bit
2114A-4
BIT 3195 G
intel 2114a
memory ic 2114a
V/2114A
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DN851
Abstract: No abstract text available
Text: DN851 J W t] \ — zp 7=f-t'5/5^JL/IC DN851 4 t í "j h JlR iË 2 f ë j j > ^ / 4 B i t R e v e rsib le B in a ry C o u n te r • 1§£ ^ / D e s c r i p t i o n DN851 i±, U nit ! mm j - — i-ìlfejffl £ L T S x f f ? ix Í 2<r lla; li 3<r 1 4<L s 5<i
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DN851
dn85I
DN851
08max.
14-Lead
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VALVO Handbuch
Abstract: valvo handbuch rohren valvo 89 8937 000 Valvo Bauelemente GmbH YD 1175 valvo halbleiter YD1170 20kw Triode triode FU 33
Text: Elektronik. Wir bauen die Elemente. Senderöhren für Industrie generatoren 1983 Datenbuch Elektronik. Wir bauen die Elemente. Unser A rbeitsgebiet - besonders die M i kroelektronik - e ntw ickelt sich im m er rascher zum M otor für eine Vielzahl von Innovationen.
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Z8030CMB
Abstract: 56708 TDA 1240 Z8000 Z8030 Z8030ACMB military part marking symbols serial number z-scc
Text: DESC FORM 193 1. SCOPE 1.1 Scope. This drawing describes device requirements fo r class B m icrocircuits in accordance with 1 .2 .1 of MIL-STD-883, "Provisions fo r the use of MIL-STD-883 in conjunction with compliant non-JAN devices". 1.2 Part number. The complete p a rt number shall be as shown in the follow ing example:
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MIL-STD-883,
MIL-STD-883
MIL-M-38510
Z8030A
Z8030
5962-8551801QX
Z8030ACMB
Z8030AD2/883
5962-8551801YX
Z8030ALMB
Z8030CMB
56708
TDA 1240
Z8000
military part marking symbols serial number
z-scc
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Untitled
Abstract: No abstract text available
Text: klE D • MMTb203 0053517 130 ■ H I T 2 HB56G51236 Series- HITACHI/ logic/arrays/heh 524,288-Word x 36-Bit High Density Dynamic RAM Module The HB56G51236B/SB is a 5 12k x 36 dynamic RAM module, mounted 4 pieces of 4-Mbit DRAM HM514280AJ/ALJ sealed in SOJ package. An
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MMTb203
HB56G51236
288-Word
36-Bit
HB56G51236B/SB
HM514280AJ/ALJ)
HB56G51
236B/SB
72-pin
HB56G5I236B/SB
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A1406
Abstract: No abstract text available
Text: HOA1406 Reflective Sensor FE A TU R ES . C hoice of phototransistor o r photodartington output . Low profile package . H erm etic style em itter and detector • Focused fo r m axim um response • 24.0 in. 610 mm min. 26 AW G T eflon insulated lead w ires
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HOA1406
A1406-001)
A1406-003)
A1406
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