Untitled
Abstract: No abstract text available
Text: IRGP4690DPbF IRGP4690D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V C IC = 90A, TC = 100°C C C tSC ≥ 5 s, TJ max = 175°C G VCE(on) typ. = 1.70V @ IC = 75A E n-channel Applications • Industrial Motor Drive • Inverters
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IRGP4690DPbF
IRGP4690D-EPbF
O-247AD
IRGP4690D-EP
O-247AC
JESD22-A114)
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0/b40 B2 RECTIFIER 400V
Abstract: IRGP4266 2.5/b40 B2 RECTIFIER 400V
Text: IRGP4266PbF IRGP4266-EPbF Insulated Gate Bipolar Transistor VCES = 650V C G G IC = 90A, TC =100°C tSC 5.5µs, TJ max = 175°C C G G VCE(ON) typ. = 1.7V @ IC = 75A E IRGP4266PbF TO-247AC n-channel Applications • Industrial Motor Drive Inverters
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IRGP4266PbF
IRGP4266-EPbF
IRGP4266-EPbF
O-247AD
O-247AC
O-247AC
0/b40 B2 RECTIFIER 400V
IRGP4266
2.5/b40 B2 RECTIFIER 400V
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irg7ph50
Abstract: IRG7PH50K10DPBF IRG7PH50K10D 50A 1200V IRG7PH50K10D-EPBF
Text: IRG7PH50K10DPbF IRG7PH50K10D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V C G IC = 50A, TC =100°C tSC 10µs, TJ max = 150°C G E VCE(ON) typ. = 1.9V @ IC = 35A C G IRG7PH50K10DPbF E n-channel Applications
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IRG7PH50K10DPbF
IRG7PH50K10D-EPbF
IRG7PH50K10DPbF
RG7PH50K10DEPbF
IRG7PH50K10D-EPBF
IRG7PH50K10DPbF/IRG7PH50K10D-EPbF
O-247AC
O-247AD
JESD47F)
irg7ph50
IRG7PH50K10D
50A 1200V
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Untitled
Abstract: No abstract text available
Text: IRG7PK35UD1PbF IRG7PK35UD1-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1400V C G G IC = 20A, TC =100°C TJ max = 150°C VCE(ON) typ. = 2.0V @ IC = 20A E n-channel Applications • Induction heating Microwave ovens
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IRG7PK35UD1PbF
IRG7PK35UD1-EPbF
IRG7PK35UD1PbFÂ
247ACÂ
IRG7PK35UD1â
247ADÂ
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UC1698
Abstract: LCD Controller UC1698U
Text: HIGH-VOLTAGE MIXED-SIGNAL IC 160 x 128RGB C-STN LCD Controller-Driver w/ 16-bit per RGB On-Chip SRAM Optimized for VSTN Video-CSTN MP Specifications Revision 1.2 March 25, 2008 ULTRACHIP The Coolest LCD Drive, Ever!! ULTRACHIP 1999 ~ 2008 High-Voltage Mixed-Signal IC
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128RGB
16-bit
UC1698
LCD Controller
UC1698U
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Untitled
Abstract: No abstract text available
Text: IRG7PK35UD1PbF IRG7PK35UD1-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1400V C C C IC = 20A, TC =100°C TJ max = 150°C G G VCE(ON) typ. = 2.0V @ IC = 20A E n-channel Applications • Induction heating Microwave ovens
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Original
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IRG7PK35UD1PbF
IRG7PK35UD1-EPbF
IRG7PK35UD1PbFÂ
247ACÂ
IRG7PK35UD1â
247ADÂ
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PDF
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Untitled
Abstract: No abstract text available
Text: IRG7PH37K10DPbF IRG7PH37K10D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V C G G IC = 25A, TC =100°C tSC 10µs, TJ max = 150°C G C VCE(ON) typ. = 1.9V @ IC = 15A G IRG7PH37K10DPbF TO-247AC E
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IRG7PH37K10DPbF
IRG7PH37K10D-EPbF
IRG7PH37K10DPbFÂ
247ACÂ
IRG7PH37K10Dâ
247ADÂ
O-247AC
O-247AD
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PDF
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Untitled
Abstract: No abstract text available
Text: IRG7PH44K10DPbF IRG7PH44K10D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V G G C IC = 40A, TC =100°C tSC 10µs, TJ max = 150°C G C VCE(ON) typ. = 1.9V @ IC = 25A E n-channel Applications G IRG7PH44K10DPbF
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IRG7PH44K10DPbF
IRG7PH44K10D-EPbF
IRG7PH44K10DPbFÂ
247ACÂ
IRG7PH44K10Dâ
247ADÂ
O-247AC
O-247AD
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Untitled
Abstract: No abstract text available
Text: IRG7PH50K10DPbF IRG7PH50K10D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V C C C IC = 50A, TC =100°C tSC 10µs, TJ max = 150°C G VCE(ON) typ. = 1.9V @ IC = 35A G E n-channel Applications • Industrial Motor Drive
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IRG7PH50K10DPbF
IRG7PH50K10D-EPbF
IRG7PH50K10DPbFÂ
IRG7PH50K10Dâ
O-247AC
O-247AD
JESD47F)
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IRG7
Abstract: No abstract text available
Text: IRGP4263PbF IRGP4263-EPbF Insulated Gate Bipolar Transistor C VCES = 650V IC = 60A, TC =100°C tSC 5.5µs, TJ max = 175°C E G VCE(ON) typ. = 1.7V @ IC = 48A C G IRGP4263PbF TO247AC E n-channel Applications • Industrial Motor Drive • Inverters
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IRGP4263PbF
IRGP4263-EPbF
O247AC
O-247AD
IRG7P4263PbF
IRG7P4263-EPbF
O-247AC
IRG7
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Untitled
Abstract: No abstract text available
Text: IRGP4760DPbF IRGP4760D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 650V C IC = 60A, TC =100°C tSC 5.5µs, TJ max = 175°C G C VCE(ON) typ. = 1.7V @ IC = 48A G IRGP4760DPbF TO-247AC E n-channel Applications
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IRGP4760DPbF
IRGP4760D-EPbF
IRGP4760DPbFÂ
247ACÂ
IRGP4760Dâ
247ADÂ
IRGP4760DPbF/IRGP4760D-EPbF
O-247AC
JESD47F)
O-247AD
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Untitled
Abstract: No abstract text available
Text: IRGP4790DPbF IRGP4790D-EPbF FOR REVIEW ONLY Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 650V C IC = 90A, TC =100°C tSC 5.5µs, TJ max = 175°C E G VCE(ON) typ. = 1.7V @ IC = 75A C G IRGP4790DPbF TO-247AC
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IRGP4790DPbF
IRGP4790D-EPbF
IRGP4790DPbFÂ
247ACÂ
IRGP4790Dâ
247ADÂ
O-247AD
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Untitled
Abstract: No abstract text available
Text: IRGP4263PbF IRGP4263-EPbF Insulated Gate Bipolar Transistor C VCES = 650V G G IC = 60A, TC =100°C tSC 5.5µs, TJ max = 175°C G VCE(ON) typ. = 1.7V @ IC = 48A C G IRGP4263PbF E n-channel Applications • Industrial Motor Drive • Inverters
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IRGP4263PbF
IRGP4263-EPbF
IRGP4263PbFÂ
IRGP4263â
IRG7P4263PbF
IRG7P4263-EPbF
O-247AC
O-247AD
IRGP4263PbF/IRGP4263-EPbF
JESD47F)
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Untitled
Abstract: No abstract text available
Text: IRGP4262DPbF IRGP4262D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 650V C G G IC = 40A, TC =100°C tSC 5.5µs, TJ max = 175°C G C VCE(ON) typ. = 1.7V @ IC = 24A C n-channel Applications G Gate E G IRGP4262D-EPbF
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IRGP4262DPbF
IRGP4262D-EPbF
O-247AD
O-247AC
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|
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Untitled
Abstract: No abstract text available
Text: IRGP4760PbF IRGP4760-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 650V C IC = 60A, TC =100°C tSC 5.5µs, TJ max = 175°C G C VCE(ON) typ. = 1.7V @ IC = 48A C n-channel G Gate C Collector Features E Emitter
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IRGP4760PbF
IRGP4760-EPbF
IRGP4760â
247ADÂ
IRGP4760PbFÂ
247ACÂ
IRGP4760PbF/IRGP4760-EPbF
O-247AC
JESD47F)
O-247AD
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Untitled
Abstract: No abstract text available
Text: IRG7PH37K10DPbF IRG7PH37K10D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V C G G IC = 25A, TC =100°C tSC 10µs, TJ max = 150°C G C VCE(ON) typ. = 1.9V @ IC = 15A G IRG7PH37K10DPbF TO-247AC E
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IRG7PH37K10DPbF
IRG7PH37K10D-EPbF
IRG7PH37K10DPbFÂ
247ACÂ
IRG7PH37K10Dâ
247ADÂ
O-247AC
O-247AD
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PDF
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Untitled
Abstract: No abstract text available
Text: IRG7PH44K10DPbF IRG7PH44K10D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V G G C IC = 40A, TC =100°C tSC 10µs, TJ max = 150°C G C VCE(ON) typ. = 1.9V @ IC = 25A E n-channel Applications G IRG7PH44K10DPbF
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IRG7PH44K10DPbF
IRG7PH44K10D-EPbF
IRG7PH44K10DPbFÂ
247ACÂ
IRG7PH44K10Dâ
247ADÂ
O-247AC
O-247AD
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PDF
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Untitled
Abstract: No abstract text available
Text: IRG7PH44K10DPbF IRG7PH44K10D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V C C C IC = 40A, TC =100°C tSC 10µs, TJ max = 150°C G GC VCE(ON) typ. = 1.9V @ IC = 25A E G Gate • Industrial Motor Drive
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IRG7PH44K10DPbF
IRG7PH44K10D-EPbF
IRG7PH44K10DPbFÂ
247ACÂ
IRG7PH44K10Dâ
247ADÂ
O-247AC
O-247AD
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PDF
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Untitled
Abstract: No abstract text available
Text: IRGP4263PbF IRGP4263-EPbF Insulated Gate Bipolar Transistor C VCES = 650V G G IC = 54A, TC =100°C tSC 5.5µs, TJ max = 175°C G VCE(ON) typ. = 1.7V @ IC = 48A C G IRGP4263PbF E n-channel Applications • Industrial Motor Drive • Inverters
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IRGP4263PbF
IRGP4263-EPbF
IRGP4263PbF
RGP4263EPbF
IRG7P4263PbF
IRG7P4263-EPbF
IRGP4263PbF/IRGP4263-EPbF
O-247AC
O-247AD
JESD47F)
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PDF
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Bridge Rectifier, 35A, 600V
Abstract: No abstract text available
Text: IRGP6650DPbF IRGP6650D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C C C IC = 50A, TC =100°C tSC 5µs, TJ max = 175°C G C G IRGP6650DPbF TO-247AC E VCE(ON) typ. = 1.65V @ IC = 35A n-channel
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IRGP6650DPbF
IRGP6650D-EPbF
IRGP6650DPbFÂ
247ACÂ
IRGP6650Dâ
247ADÂ
IRGP6650DPbF/IRGP6650D-EPbF
O-247AC
O-247AD
Bridge Rectifier, 35A, 600V
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Untitled
Abstract: No abstract text available
Text: IRGP4266DPbF IRGP4266D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 650V G G C IC = 90A, TC =100°C tSC 5.5µs, TJ max = 175°C G C VCE(ON) typ. = 1.7V @ IC = 75A C G IRGP4266DPbF TO-247AC E n-channel
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IRGP4266DPbF
IRGP4266D-EPbF
IRGP4266DPbFÂ
247ACÂ
IRGP4266Dâ
247ADÂ
O-247AC
IRGP4266DPbF/IRGP4266D-EPbF
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Untitled
Abstract: No abstract text available
Text: IRGP4266DPbF IRGP4266D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 650V C IC = 90A, TC =100°C tSC 5.5µs, TJ max = 175°C G VCE(ON) typ. = 1.7V @ IC = 75A G E E G IRGP4266DPbF TO-247AC n-channel Applications
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IRGP4266DPbF
IRGP4266D-EPbF
IRGP4266DPbFÂ
247ACÂ
IRGP4266Dâ
247ADÂ
O-247AC
page11.
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PDF
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Untitled
Abstract: No abstract text available
Text: IRGP4263DPbF IRGP4263D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 650V C IC = 60A, TC =100°C tSC 5.5µs, TJ max = 175°C G VCE(ON) typ. = 1.7V @ IC = 48A G E E G IRGP4263DPbF TO-247AC n-channel Applications
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IRGP4263DPbF
IRGP4263D-EPbF
IRGP4263DPbFÂ
247ACÂ
IRGP4263Dâ
247ADÂ
JESD47F)
O-247AD
|
PDF
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Untitled
Abstract: No abstract text available
Text: IRGP4266PbF IRGP4266-EPbF Insulated Gate Bipolar Transistor VCES = 650V C IC = 90A, TC =100°C tSC 5.5µs, TJ max = 175°C G VCE(ON) typ. = 1.7V @ IC = 75A G E G Gate Low VCE(ON) and switching Losses Square RBSOA and Maximum Junction Temperature 175°C
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Original
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IRGP4266PbF
IRGP4266-EPbF
O-247AC
O-247AD
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