S6B0741
Abstract: 1145-36 4.0 LCD LG 410 WG2 COG LCD 3500 display driver ic 4060 SS 4914 COM126 COM127 lcd cog
Text: S6B0741 128 SEG / 129 COM DRIVER & CONTROLLER FOR 4 GRAY SCALE STN LCD March. 2001 Ver. 2.2 Contents in this document are subject to change without notice. No part of this document may be reproduced or transmitted in any form or by any means, electronic or mechanical, for any
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S6B0741
COM127
COM64
SEG127
COM63
S6B0741
1145-36
4.0 LCD LG
410 WG2
COG LCD 3500 display driver
ic 4060
SS 4914
COM126
COM127
lcd cog
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S6B0741
Abstract: 21 1136 410 WG2 ic 4060 COM126 COM127 S6B1741
Text: S6B1741 128 SEG / 129 COM DRIVER & CONTROLLER FOR 4 GRAY SCALE STN LCD May. 2002 Ver. 0.0 Contents in this document are subject to change without notice. No part of this document may be reproduced or transmitted in any form or by any means, electronic or mechanical, for any
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Original
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S6B1741
COM127
COM64
S6B0741
SEG127
COM63
S6B0741
21 1136
410 WG2
ic 4060
COM126
COM127
S6B1741
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TL0350
Abstract: "FRC"
Text: HM11S140 129 COM / 128 SEG DRIVER & CONTROLLER FOR 4 GRAY SCALE STN LCD Hynix Semiconductor, Inc. 129 COM / 128 SEG DRIVER & CONTROLLER FOR STN LCD HM11S140 Preliminary Ver 1.0 1. INTRODUCTION The HM11S140 is a driver & controller LSI for 4-level gray scale graphic dot-matrix liquid crystal display
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HM11S140
HM11S140
TL0350
Figure10-4.
TL0350
"FRC"
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Untitled
Abstract: No abstract text available
Text: EIN UNTERNEHMEN VON Keramik-Kondensatoren fur die professioneile Eiektronik Ceramic Capacitors for professional electronics Roederstein Keram ische Vielschichtkondensatoren in axialer Ausfiihrung, Klasse 2, nach M IL -C -39014/05 C eram ic m ultilayer capacitors w ith axial leads, class 2,
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SV3a
Abstract: WSOP 48 socket 0B 2262 20-PIN LZ21N3V LZ21N3VS SV-3A
Text: SHARP LZ21N3V/VS L Z 21N 3V /V S 1/2-type Interline Color CCD Area Sensors with 2 140 k Pixels DESCRIPTION PIN CONNECTIONS The LZ21N3V/VS are 1/2-type 8.08 mm solid- TOP VIEW 20 -P IN H A L F -P IT C H W D IP state image sensors that consist of PN photo
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LZ21N3V/VS
LZ21N3V/VS
SV3a
WSOP 48 socket
0B 2262
20-PIN
LZ21N3V
LZ21N3VS
SV-3A
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XL93C
Abstract: XL93C66 SK 100 GALE xle93 XLS93C66
Text: C ^ f d E A tZ L . . . . _ m ic r o e l e c t r o n ic s XL93C66 4 ,0 9 6 -B it S e ria l E le c tric a lly E ra sab le PROM with 2V Read Capability FE A TU R E S • PIN C O N FIG U R A TIO N S S tate-of-th e-A rt A rchitecture — N onvolatile data storage
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XL93C66
096-Bit
XL93C
XL93C66
SK 100 GALE
xle93
XLS93C66
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74AC11191
Abstract: ob 2262 pin diagram 4 bit asynchronous binary up counter
Text: 54AC11191, 74AC11191 SYNCHRONOUS 4-BIT UP/DOWN BINARY COUNTERS TI0151— D3426, M AR CH 1990 • Single Down/Up Count Control Line 54AC11191 . . . J PACKAGE 74AC11191 . . . DW OR N PACKAGE • Look-Ahead Circuitry Enhances Speed of Cascaded Counters TOP VIEW
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54AC11191,
74AC11191
TI0151â
D3426,
500-mA
300-mil
54ac11191
j/f-50%
74AC11191
ob 2262
pin diagram 4 bit asynchronous binary up counter
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transistor kt 326
Abstract: transistor KT 3107 Belcanto ST 3010 transistor BU 5027 J 5027-R atakassette SANYO CTP 4360 transistor kt 925 Transstereo 2401.00 transistor KT 816
Text: SERVICE-MITTEILUNGEN V E B IN D U S T R IE V E R T R IE B R U N D F U N K U N O F E R N S E H E N ir .f -t j | R A P io -teievlslon JUNI/JULI 1960 6/7 SKITB 1-8 Mitteilung aus dem VEB Fernsehgerätewerke Staßfurt Informationen für den Fernsehgeräteservice
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Untitled
Abstract: No abstract text available
Text: DALLAS DS2262 MegaStore Stik s e m ic o n d u c to r FEATURES PIN ASSIGNMENT • Solid-state mass storage subsystem using nonvola tile DRAM • Versions with 4 and 8 megabits available • DRAM timing and refresh control performed transpar ently to host
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DS2262
DS2262
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2SC2037
Abstract: 2SC1733 2SC1424 2SC2759 ne73436 JE73 2sc2026 2SC2148 NE73432 NE734
Text: N E C / CALIFORNIA b427414 OGOlHb? 1SE D N EC b -T -ll-tf NPN SILICON GENERAL PURPOSE TRANSISTOR NE734 SERIES FEATURES DESCRIPTION AND APPLICATIONS • LOW N O ISE FIG U R E: < 3 dB at 500 MHz The NE734 series of NPN silicon general purpose UHF transis tors provide the designer with a wide selection of reliable
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b427414
NE734
r-31-27
NE73435)
2SC2037
2SC1733
2SC1424
2SC2759
ne73436
JE73
2sc2026
2SC2148
NE73432
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27C020
Abstract: 27C020-150V10 A10-A17 GPIA30R 27C020-200V10 N27C020-200V10 P27C020-200V10 29022
Text: P IR S O M O K IA R W ir r t e ! 27C020 2M 256K x 8 CHMOS EPROM • JEDEC Approved EPROM Pinouts — 32-Pin DIP, 32-Pln PLCC — Simple Upgrade from Lower Densities ■ Complete Upgrade Capability to Higher Densities ■ Fast Programming — Qulck-Puise P r o g r a m m i n g
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27C020
32-Pin
32-Pln
27C020
152-bit
27C020-150V10
A10-A17
GPIA30R
27C020-200V10
N27C020-200V10
P27C020-200V10
29022
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Untitled
Abstract: No abstract text available
Text: J PRELIMINARY INFORMATION IMegabit Module XM28C010 f i a r 128K x 8 Bit Electrically Erasable PROM FEATURES • High Density IMegabit 128K x 8 E2PR0M Module • Access Time of 250 ns at -55°C to + 125°C • Base Memory Component: Xicor CMOS X2UC256 • JEDEC Standard 32-Pin 600 Mil Wide
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XM28C010
X2UC256
32-Pin
X28C010
--64-Byte
MIL-STD-883
XM28C010
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Untitled
Abstract: No abstract text available
Text: MOSEL' VITELIC V53C8512/V53C9512 HIGH PERFORMANCE, LO W POWER 512K x 8 AND 5 1 2 K x 9 B IT FAST PAGE MODE CMOS DYNAMIC RAM HIGH PERFORMANCE V53C8512/V53C9512 PRELIMINARY 50/50L 60/60L 70/70L Max. RAS Access Time, tflAC 50 ns 60 ns 70 ns Max. Column Address Access Time, (ïcaa)
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V53C8512/V53C9512
V53C8512/V53C9512
50/50L
110ns
60/60L
70/70L
V53C8512L/V53C9512L
V53C8512/9512
V53C8512/9512
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Untitled
Abstract: No abstract text available
Text: M O S E L VITELIC V53C 404B H IG H PER FO R M AN C E, L O W PO W ER 1 M X 4 B IT F A S T P A G E M O D E C M O S D Y N A M IC R A M HIGH PERFORMANCE V53C404B 60 70 80 10 Max. RAS Access Time, tRAC 60 ns 70 ns 80 ns 100 ns Max. Column Address Access Time, (1rA A )
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V53C404B
V53C404B-10
V53C404B
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EP600
Abstract: EP600 eprom 5c060 P5C060-45 EP600 programming 5C060-55 5C06055 EP6003 16-MACROCELL 74HC
Text: intJ. 5C060 16-MACROCELL CMOS PLD • High-Performance LSI Semi-Custom Logic Alternative to Low-End Gate Arrays, TTL, and 74HC SSI and MSI Logic ■ 8 P-Terms, Selectable SOP Invert, Clear and OE P-Terms for Each Macrocell ■ 16 Macrocells with Programmable I/O
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5C060
5C060-45
130pF
EP600
EP600 eprom
5c060
P5C060-45
EP600 programming
5C060-55
5C06055
EP6003
16-MACROCELL
74HC
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integrated circuit TL 2262
Abstract: TL 2262 integrated circuit
Text: HIP6019 in t e r r ii D a ta S h e e t The HIP6019 provides the power control and protection for four output voltages in high-performance microprocessor and computer applications. The IC integrates two PWM controllers, a linear regulator and a linear controller as well as the
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HIP6019
HIP6019
7x1000tiF
HUF75307D3S
C43-46
4x1000
HUF76137S3S
HUF76139S3S
integrated circuit TL 2262
TL 2262 integrated circuit
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Untitled
Abstract: No abstract text available
Text: SEC iPD17103, fiPD17104 FO U R -B IT S IN G L E -C H IP M IC R O C O M P U T E R S /xPDI 7103 and jaPD17104 are tiny microcontrollers each consisting of a 1K-byte ROM, 16-word RAM, and 11 pins (for jUPD17103> or 16 pins (for /¿PD17104 for I/O ports. The CPU can be programmed using the jjPD17000 architecture based on a general register system that allows
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iPD17103,
fiPD17104
jaPD17104
16-word
jUPD17103>
PD17104)
jjPD17000
16-bit
PD17103:
PD17104:
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TL 2272 DECODER
Abstract: 271 Ceramic Disc Capacitors data dioda made in TL 2272 R 70il ADC08061 ADC08061CMJ ADC08062 ADC0820 TL 2262
Text: N a t i o n a l ADC08061/ ADC08062 & S e m i c o n d u c t o r ADC08061/ ADC08062 500 ns A /D Converter with S /H Function and Input Multiplexer General Description Key Specifications Using a patented multi-step A /D conversion technique, the 8-bit ADC08061 and ADC08062 CMOS ADCs offer 500 ns
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ADC08061
ADC08062
ADC08062
ADC08061/2
b5011EM
TL 2272 DECODER
271 Ceramic Disc Capacitors
data dioda made in
TL 2272 R
70il
ADC08061CMJ
ADC0820
TL 2262
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TL 2272 RB
Abstract: NS400 TL 2272 DECODER TL 2272 R IRT 1250
Text: ADC08061 / ADC08062 N a t i o n a l S e m i c o n d u c t o r tß ADC08061/ ADC08062 500 ns A/D Converter with S/H Function and Input Multiplexer G eneral Description Key S pecifications Using a patented multi-step A/D conversion technique, the 8-bit ADC08061 and ADC08062 CMOS ADCs offer 500 ns
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ADC08061
ADC08062
ADC08061/
ADC08062
ADC0B062
ADC08061/2
TL 2272 RB
NS400
TL 2272 DECODER
TL 2272 R
IRT 1250
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Untitled
Abstract: No abstract text available
Text: fax id: 5414 CY7C4801/4811/4821 CY7C4831/4841/4851 CYPRESS 256/512/1K/2K/4K/8K x9 x2 Double Sync FIFOs Features • Double high speed, low power, first-in first-out FIFO memories • Double 256 x 9 (CY7C4S01) • Double 512 x 9 (CY7C4811) • Double 1K x 9 (CY7C4821)
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CY7C4S01)
CY7C4811)
CY7C4821)
CY7C4831)
CY7C4841)
CY7C4851)
CY7C4201/4211/4221/
100-MHz
CY7C4841-25AC
CY7C4841-25AI
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2LINE
Abstract: NS180 TMPZ84COOP diode+cc+3053 rectifier+bridge+cc+3053
Text: TOSHIBA JT6B03-AS TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC JT6B03-AS DOT MATRIX LCD CONTROLLER AND DRIVER LSI The JT6B03-AS is a dot matrix LCD controller that realizes low power and high speed using CMOS silicon gate technology. This driver can drive a dot matrix LCD under 4-bit or 8-bit MPU control, and
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JT6B03-AS
JT6B03-AS
T6A41,
T6A92)
2LINE
NS180
TMPZ84COOP
diode+cc+3053
rectifier+bridge+cc+3053
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TMPZ84COOP
Abstract: 40X2 T6A41 T6A92 CSB250D pin diagram of serial lcd display 20x2 ScansUX39
Text: TOSHIBA JT6B03-AS TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC JT6B03-AS DOT MATRIX LCD CONTROLLER AND DRIVER LSI The JT6B03-AS is a dot matrix LCD controller that realizes low power and high speed using CMOS silicon gate technology. This driver can drive a dot matrix LCD under 4-bit or 8-bit MPU control, and
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JT6B03-AS
T6A41,
T6A92)
TMPZ84COOP
SEG104
40X2
T6A41
T6A92
CSB250D
pin diagram of serial lcd display 20x2
ScansUX39
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d17103
Abstract: mPD1710
Text: m e H.PD17103, ^PD17104 F O U R -B IT S IN G L E -C H IP M IC R O C O M P U T E R S /iP D 1 7103 and ¿¿PD17104 are tin y m icro controlle rs each consisting o f a 1K -byte ROM, 16*word R A M , and 11 pins fo r /¿PD17103 or 16 pins {fo r ¿iPD17104) fo r I/O ports.
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uPD17103
uPD17104
PD17104
PD17103)
iPD17104)
iPD1700Q
16-bit
PD17103:
d17103
mPD1710
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Untitled
Abstract: No abstract text available
Text: ADVANCE M • in n r iM 25 6 K x 18, 128K x 32/36 3.3V I/O, PIPELINED. SCD SYNCBURST SRAM MT58LC256K18D9, MT58LC128K32D9, MT58LC128K36D9 SYNCBURST SRAM 3.3V Supply, Pipelined, Burst Counter and Single-Cycle Deselect SYNCBURST SRAM FEATURES • Fast access times: 3.5ns, 3.8ns, 4.2ns, 4.5ns and 6ns
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MT58LC256K18D9,
MT58LC128K32D9,
MT58LC128K36D9
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