stakpak
Abstract: abb press-pack igbt 20H2500 IGBT abb stakpak 5SNX 20H2500 igbt 3 KA 5SNX
Text: VCE IC = = 2500 V 2000 A ABB StakPak H Series Press-pack IGBT 5SNX 20H2500 preliminary Doc. No. 5SYB 0116-03 June 04 • High SOA • High tolerance to uneven mounting pressure • Suitable for series connection • Explosion resistant package • Modular design concept,
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20H2500
CH-5600
stakpak
abb press-pack igbt
20H2500
IGBT abb stakpak
5SNX 20H2500
igbt 3 KA
5SNX
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24c08wp
Abstract: 24C08 WP B58 258 24c02 LTN141X8-L00 24rf08 c11ph BC578 HT14X14-101 24C08W samsung LED TV schema
Text: A 4 3 B C Thermal&Fan Controler GMT PAGE:22 G768B CPU CORE REGULATOR MAXIM MAX1717 PAGE:5 SYSTEM DC/DC REGULATOR MAXIM MAX1631 PAGE:28 BATTERY CHARGER Controler MAXIM PAGE:29 MAX1772 BATTERY CHARGER FirmWare Ambit MC68HC908SR12 CPU Intel Mobile PIII/CELERON
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ICS9248-157
ICS9112BM-17
MAX1717
MAX1772
G768B
PC100MHz
MAX1631
MC68HC908SR12
100MHz
M1632-C
24c08wp
24C08 WP
B58 258 24c02
LTN141X8-L00
24rf08
c11ph
BC578
HT14X14-101
24C08W
samsung LED TV schema
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M34282E2GP
Abstract: R2h DIODE M34282M1 M34282M1-XXXGP M34282M2-XXXGP
Text: MITSUBISHI MICROCOMPUTERS 4282 Group RY A N IMI . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t No e par Som PRE L SINGLE-CHIP 4-BIT CMOS MICROCOMPUTER DESCRIPTION • Timer Timer 1 . 8-bit timer
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essailec
Abstract: 1SNA892461R1500 entrelec diode XUS001735 1SNA XUS001738 367-17 SNBT23 0165 830.21 n0190
Text: Short Form Catalog Terminal blocks Terminal blocks Product index Low Voltage Products & Systems ABB Inc. • 888-385-1221 • www.abb-control.com 0. Table of contents and alphanumeric listing 1. Screw clamp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 - 37
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C0201
essailec
1SNA892461R1500
entrelec diode
XUS001735
1SNA
XUS001738
367-17
SNBT23
0165 830.21
n0190
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r2l diode
Abstract: R2h DIODE M34282Mx-XXXGP
Text: MITSUBISHI MICROCOMPUTERS 4282 Group RY A N IMI . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t No e par Som PRE L SINGLE-CHIP 4-BIT CMOS MICROCOMPUTER DESCRIPTION • Timer Timer 1 . 8-bit timer
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PE3339
Abstract: PE83342
Text: PRELIMINARY SPECIFICATION 4 PE83342 Military Operating Temperature Range 2.7 GHz Integer-N PLL with Field-Programmable EEPROM Product Description Peregrine’s PE883342 is a high performance integer-N PLL with embedded EEPROM capable of frequency synthesis up to 2.7 GHz with a speed-grade option to 3.0
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PE83342
PE883342
PE83342
PE3339
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PE3339
Abstract: PE83342
Text: PRELIMINARY SPECIFICATION 4 PE83342 Military Operating Temperature Range 2.7 GHz Integer-N PLL with Field-Programmable EEPROM Product Description Peregrine’s PE883342 is a high performance integer-N PLL with embedded EEPROM capable of frequency synthesis up to 2.7 GHz with a speed-grade option to 3.0
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PE83342
PE883342
PE83342
PE3339
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M34282Mx-XXXGP
Abstract: TDA 2516 R2h DIODE R-Car M34282M1 416SP marking code SKs M34282M2-XXXGP M34282E2GP M34282M1-XXXGP
Text: MITSUBISHI MICROCOMPUTERS 4282 Group SINGLE-CHIP 4-BIT CMOS MICROCOMPUTER DESCRIPTION • Timer Timer 1 . 8-bit timer This has a reload register and carrier wave output auto-control function
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r2l diode
Abstract: R2h DIODE M34282M1 M34282Mx-XXXGP M34282E2GP M34282M1-XXXGP M34282M2-XXXGP
Text: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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c516 transistor
Abstract: HP 4716 transistor b716 EF16 F016 M35052-XXXFP M35052-XXXSP 5116 RAM 5216 D916
Text: MITSUBISHI MICROCOMPUTERS M35052-XXXSP/FP SCREEN CHARACTER and PATTERN DISPLAY CONTROLLERS DESCRIPTION FEATURES PIN CONFIGURATION TOP VIEW CP1 1 20 VDD1 TESTA 2 19 HOR CS 3 18 CP2 SCK 4 17 OSCIN SIN 5 16 VSS AC 6 15 P1 VDD2 7 14 P0 CVIDEO 8 13 TESTB LECHA
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M35052-XXXSP/FP
M35052-XXXSP/FP
M35052-XXXSP
H-LF484-A
KI-9703
c516 transistor
HP 4716
transistor b716
EF16
F016
M35052-XXXFP
5116 RAM
5216
D916
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ba 4916
Abstract: transistor fp 1016 C516 diode marking code HP2 SP 8616 9C016 BA 8A16 1D16 eprom 2516 IC 4016 PIN DIAGRAM
Text: MITSUBISHI MICROCOMPUTERS M35052-XXXSP/FP SCREEN CHARACTER and PATTERN DISPLAY CONTROLLERS DESCRIPTION FEATURES • • • • • • • • • • • • • • • • • • APPLICATION TV, VCR, Movie REV.1.1 CP1 ← TESTA CS SCK SIN AC → → ↔
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M35052-XXXSP/FP
20P4B
M35052-XXXFP
M35052-XXXSP/FP
20P2Q-A
20-PIN
ba 4916
transistor fp 1016
C516
diode marking code HP2
SP 8616
9C016
BA 8A16
1D16
eprom 2516
IC 4016 PIN DIAGRAM
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2SC2644
Abstract: No abstract text available
Text: TO SH IBA _ 2SC2644 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2644 Unit in mm VH F-U HF BAND WIDEBAND AMPLIFIER APPLICATIONS • • « High Gain Low IMD fp = 4 GHz Typ. MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC
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2SC2644
SC-43
000707EAA1
500MHz
2SC2644
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2SC2498
Abstract: No abstract text available
Text: TO SH IBA 2SC2498 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2498 VH F-U HF BAND LOW NOISE AMPLIFIER APPLICATION U nit in mm MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage Colleetor-Emitter Voltage Emitter-Base Voltage Collector Current
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2SC2498
SC-43
000707EAA1
semiconduct12
2SC2498.
2SC2498
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2216
Abstract: 2SC2216 2SC2717
Text: TOSHIBA 2SC2216.2SC2717 2SC2216, 2SC2717 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm TV FINAL PICTURE IF AMPLIFIER APPLICATIONS • • . 5.1 MAX. High Gain : Gpe = 33dB Typ. (f = 45 MHz) Good Linearity of hjpg. .n . 0.55 MAX. M AXIM UM RATINGS (Ta = 25°C)
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2SC2216
2SC2717
2SC2216,
SC-43
2216
2SC2717
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2SC941TM
Abstract: 2SC941-0 2SC941-R 2SC941-Y
Text: TO SH IBA 2SC941TM TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC941TM HIGH FREQUENCY AMPLIFIER APPLICATIONS Unit in mm AM HIGH FREQUENCY AMPLIFIER APPLICATIONS 5 1 M AX AM FREQUENCY CONVERTER APPLICATIONS • Low Noise Figure : NF = 3.5dB (Max.) (f = 1 MHz)
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2SC941TM
SC-43
2SC941TM
2SC941-0
2SC941-R
2SC941-Y
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2SC2669
Abstract: cq 455 2SC2669-0 2SC2669-R 2SC2669-Y BDH100
Text: TOSHIBA TOSHIBA TRANSISTOR 2SC2669 SILICON NPN EPITAXIAL PLANAR TYPE PCT PROCESS 2SC2669 Unit in mm HIGH FREQUENCY AMPLIFIER APPLICATIONS • • High Power Gain : Gpe = 30dB (Typ.) (f = 10.7 MHz) Recommended for FM IF, OSC Stage and AM CONV, IF Stage. M AXIM UM RATINGS (Ta = 25°C)
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2SC2669
55MAX.
2SC2669
cq 455
2SC2669-0
2SC2669-R
2SC2669-Y
BDH100
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2SC1923Y
Abstract: 2sc1923 10ID 2SC1923 Y
Text: TOSHIBA 2SC1923 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE PCT PROCESS 2 S C 1 923 Unit in mm HIGH FREQUENCY AMPLIFIER APPLICATIONS FM , RF, M IX , IF AMPLIFIER APPLICATIONS 5 1 M AX • Small Reverse Transfer Capacitance : Cre = 0.7 pF (Typ.)
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2SC1923
-400fa
2SC1923Y
2sc1923
10ID
2SC1923 Y
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2SC2347
Abstract: V900
Text: TO SH IBA 2SC2347 TOSHIBA TRANSISTOR TV UHF OSCILLATOR APPLICATIONS SILICON NPN EPITAXIAL PLANAR TYPE 2SC2347 Unit in mm TV VHF MIXER APPLICATIONS 5 1 M AX MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage Colleetor-Emitter Voltage Emitter-Base Voltage
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2SC2347
O-9-20
-100L
2SC2347
V900
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2SC2670
Abstract: 2SC2670-0 2SC2670-R 2SC2670-Y brel
Text: TO SH IBA 2SC2670 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2670 Unit in mm HIGH FREQUENCY AMPLIFIER APPLICATIONS AM HIGH FREQUENCY AMPLIFIER APPLICATIONS 4 .2 M A X . AM FREQUENCY CONVERTER APPLICATIONS • Low Noise Figure : NF = 3.5dB (Max.) (f = 1 MHz)
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2SC2670
55MAX.
2SC2670
2SC2670-0
2SC2670-R
2SC2670-Y
brel
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2SC2349
Abstract: No abstract text available
Text: T O S H IB A 2SC2349 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2349 TV VH F OSCILLATOR APPLICATIONS U n it in mm . 5.1 M A X. M A X IM U M RATINGS Ta = 25°C CHARACTERISTIC 0.45 SYMBOL RATING UNIT VCBO VCEO Ve b o ic ÏE PC Tj Tstg 30 15 3
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2SC2349
SO-43
-100L
2SC2349
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cq 455
Abstract: BH Re transistor 2SC380TM 2SC380TM-R 2SC380TM-Y 10.7 MHZ
Text: TO SH IBA 2SC380TM TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE PCT PROCESS 2SC380TM Unit in mm HIGH FREQUENCY AMPLIFIER APPLICATIONS . 5.1 M A X . • High Power Gain : Gpe = 29dB (Typ.) (f = 10.7 MHz) • Recommended for FM IF, OSC Stage and AM CONV. IF Stage.
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2SC380TM
SC-43
cq 455
BH Re transistor
2SC380TM
2SC380TM-R
2SC380TM-Y
10.7 MHZ
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Untitled
Abstract: No abstract text available
Text: 2. S c h e m a tic : 1. M echan ical Dimensions: A 0 .2 3 0 Max 4 3 t o O oj H H X D Ì 0 t 0.003 Min 1 2 3. E l e c tr ic a l S p e cificatio n s 0.030 OCL: 11 uH±30% OlOOKHz, 0.1A X O o DO OJ D X CQ ihr>- in in rn LL: 50nH Typ @1MHz, 5mA ò d Rated Voltage: 80Vdc
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L-STD-202G,
UL94V-0
E151556
4125TC
l02mm)
10KHz,
80Vdc
250Vrms1
XF0116â
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M39003/03
Abstract: No abstract text available
Text: I CSR23 MlL-C-39003/03 Solid Tantalum Capacitors MallorY GENERAL SPECIFICATIONS Extended Capacitance Graded Failure Rates DC Leakage: At+25°C - See Table Limit At+85°C - 10 x Table Limit At+125°C - 12.5 x Table Limit Capacitance Change Maximum: -10% @ -55“C
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CSR23
MlL-C-39003/03)
M39003/03
M39003/03-0182;
M39003/030182
1284/lndianapolis
46206-1284/Phone:
273-0090/Fax:
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Untitled
Abstract: No abstract text available
Text: V7S0 VS464641641B.VS864641641B 4M,8Mx64-Bit SDRAM Module Preliminary Description The VS4646441641B and VS8646441641B are 4Mx64-bit and 8Mx64-bit dual-in-line synchronous dynamic RAM module DIMM . It is mounted with 4/8 pieces of 4Mx16 synchronous DRAM (VG36641641BT), and each in a standard 54 pin TSOP package. The VS464641641B and VS864641641B
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VS464641641B
VS864641641B
8Mx64-Bit
VS4646441641B
VS8646441641B
4Mx64-bit
4Mx16
VG36641641BT)
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