IBM43RF0100EV Search Results

IBM43RF0100EV Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IBM43RF0100EV09		IBM	Development Tools, 900MHz evaluation board for IBM43RF0100		Original	PDF
IBM43RF0100EV19		IBM	Development Tools, 1900MHz evaluation board for IBM43RF0100		Original	PDF

IBM43RF0100EV Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
IBM43RF0100 Abstract: Power Transistor 2164 Text: . IBM43RF0100 Preliminary SiGe High Dynamic Range Low Noise Transistor Features • Low Noise Figure: NFmin ≈ 1.1dB @ 2.0GHz VCE = 2.0V, I C=5mA • Input IIP3 Capability: ≈ + 10dBm @ 2.0GHz, VCE = 2.5V, IC=10mA • Low Operating Voltage VCE = 1.0 to 2.5V	Original	PDF	IBM43RF0100 10dBm OT353 sgrf0100 Power Transistor 2164
HBT 00 01 Abstract: IBM43RF0100 HBT 01 05G HBT 01 05 HBT transistor mathcad ERJ-3GSYJ100 sige hbt HK10052N7S UMK105B102KW Text: Application Note Evaluating the IBM43RF0100 SiGe HBT for CDMA Driver Applications at 1.9 GHz The IBM43RF0100 Silicon-Germanium SiGe High Dynamic Range, Low-Noise Transistor is a discrete heterojunction bipolar transistor (HBT) suitable for a wide range of RF driver applications including	Original	PDF	IBM43RF0100 IBM43RF0100EV-19 0100cdmadrv HBT 00 01 HBT 01 05G HBT 01 05 HBT transistor mathcad ERJ-3GSYJ100 sige hbt HK10052N7S UMK105B102KW
germanium transistors PNP Abstract: IBM43RF0100 SiGe RF TRANSISTOR pnp germanium transistor SiGe PNP TRANSISTOR MAKING LIST SiGe PNP transistor FMMT2907ATA bipolar transistor ghz s-parameter J1 TRANSISTOR Text: Application Note Evaluating the IBM43RF0100 SiGe Low Noise Transistor Introduction The IBM43RF0100 SiGe High Dynamic Range Low Noise Transistor is a silicon-germanium SiGe NPN transistor designed for high performance, low cost applications. IBM’s SiGe manufacturing and packaging techniques result in a transistor with high gain, low noise,	Original	PDF	IBM43RF0100 IBM43RF0100EV 823Vdc. germanium transistors PNP SiGe RF TRANSISTOR pnp germanium transistor SiGe PNP TRANSISTOR MAKING LIST SiGe PNP transistor FMMT2907ATA bipolar transistor ghz s-parameter J1 TRANSISTOR
germanium transistor ac 128 Abstract: IBM REV 2.8 IBM43RF0100 IBM43RF0100EV09 SiGe POWER TRANSISTOR GERMANIUM TRANSISTOR SOT-353 Mark va va sot-353 IBM43RF0100EV19 IBMSGRF0100 Text: . IBM43RF0100 SiGe High Dynamic Range Low Noise Transistor Features • Low Noise Figure: NFmin ≈ 1.1dB @ 2.0GHz VCE = 2.0V, I C=5mA • Input IIP3 Capability: ≈ + 10dBm @ 2.0GHz, VCE = 2.5V, IC=10mA • Low Operating Voltage VCE = 1.0 to 2.5V • Package: SOT353	Original	PDF	IBM43RF0100 10dBm OT353 IBM43RF0100 sgrf0100 germanium transistor ac 128 IBM REV 2.8 IBM43RF0100EV09 SiGe POWER TRANSISTOR GERMANIUM TRANSISTOR SOT-353 Mark va va sot-353 IBM43RF0100EV19 IBMSGRF0100
7028 TRANSISTOR Abstract: No abstract text available Text: IBM43RF0100 Preliminary SiGe High Dynamic Range Low Noise Transistor Features • Low N oise Figure: NFmin ~ 1.1 dB @ 2.0G H z Low O perating Voltage • Input IIP3 C apability: ~ + 10dBm @ 2.0G Hz, Package: SO T353 V qq = 3V, lc =5m A Description The IB M 43R F 0100 is a S ilicon-G erm anium SiGe	OCR Scan	PDF	IBM43RF0100 10dBm sgrf0100 7028 TRANSISTOR
IBM43RF0100 Abstract: transistor K 1413 Text: IBM43RF0100 Preliminary SiGe High Dynamic Range Low Noise Transistor Features • Low Noise Figure: NFmin = 1 ,1dB @ 2 .0G H z • Low Operating Voltage • Input MP3 Capability: = + 10dBm @ 2.0G Hz, • Package: SO T353 VCc = 3V. lc=5mA Description The IB M 43R F0100 is a Silicon-Germanium SiGe	OCR Scan	PDF	IBM43RF0100 10dBm F0100 transistor K 1413