W65C134
Abstract: ph62 PH61 ph63 PH62 16 ph61 16 LD52 LD48 ld53 62C256
Text: 6 5 4 3 2 1 REVISI ON RECORD L TR E C O NO: APPROVED: DATE: VCC_ARROW 2 VCC_ARROW J 12 1 J U MPER1 C8 C C7 C C6 C C5 C C4 C C3 C C2 C D[0:7] J9 D EN OUT 8 OSC14A JP1 4 2 2 4 JP2 1 3 J U MPER2 3 1 A [00:23] U7 27C256 A 00 A 01 A 02 A 03 A 04 A 05 A 06 A 07
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OSC14A
27C256
W65C22SPL
62C256
PIO30X2
W65C134DB
WD8325
W65C134
ph62
PH61
ph63
PH62 16
ph61 16
LD52
LD48
ld53
62C256
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hcl laptop MOTHERBOARD CIRCUIT diagram
Abstract: uPC 577H 945 gl MOTHERBOARD CIRCUIT diagram dg 41 wv motherboard BLR MQ 06 tsr 002 triac wg 8 s 82C735 oma4 marking WMG
Text: îb ib n n n -R !” 82C735 I/O Peripheral Controllers With Printgine Parallel Port—Printgine" Floppy Disk Controller • Single-chip floppy solution ■ Software compatible with NEC 765B and Intel 82077 ■ Perpendicular recording support B 48mA disk drivers and Schmitt-trigger inputs
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82C735
250kB/s,
300kB/s,
500kB/s
NS16550
16-byte
00G7Db4
82C735
hcl laptop MOTHERBOARD CIRCUIT diagram
uPC 577H
945 gl MOTHERBOARD CIRCUIT diagram
dg 41 wv motherboard
BLR MQ 06
tsr 002 triac
wg 8 s
oma4
marking WMG
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lrr3 bosch
Abstract: 92cw53 mv20 cecl 080 TMP94FD53F CECL 006 D32 7BI mb8l mcl sbl 1 9AN1
Text: TO S H IB A Preliminary TMP92CW53F TMP94FD53F Specification Revision 1.6 23 March 2001 History Revision 1.0 1.1 1.2 1.3 Date 29 Apr. 2000 31 M ay 2000 5 July 2000 31 Aug. 2000 1.4 1.5 1.6 20 Sep. 2000 17 Nov. 2000 23 Mar. 2001 Note Initial draft A m istake correction
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TMP92CW53F
TMP94FD53F
TMP94FD53F)
CW53-33,
T1VIP92CW53
32-bit
TMP92CW53F
92CW53-316
92CW53-317
lrr3 bosch
92cw53
mv20
cecl 080
TMP94FD53F
CECL 006
D32 7BI
mb8l
mcl sbl 1
9AN1
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tmp96c141
Abstract: PC 1278H 2001H TLCS-900
Text: T O S H IB A TLCS-900 JP condition, dst < Jum p > Operation : If cc is true, then PC < - dst. Description : If the operand condition is true, jumps to the program address specified by dst. Details F lags Mnemonic : S S Z H V N C JP #16 JP #24 JP [cc,] mem
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TLCS-900
2000H
2000H.
CPU900-93
01000000B
CPU900-127
tmp96c141
PC 1278H
2001H
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Untitled
Abstract: No abstract text available
Text: T O S H IB A TLMM527A1U TO SH IBA LED D O T M A T R IX M O D U LE TLMM527A1 U 1. FEATURES • • • • • 2. Thin-size and light weight High-speed operation-30MHz Superior radiation characteristics Display function equivalent to CRT of a personal computer with a simple interface
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TLMM527A1U
TLMM527A1
operation-30MHz
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PC 1278H
Abstract: 123AH 00123457H
Text: TO SH IB A TLCS-900/H CPU HALT < H alt CPU > Operation : CPU halt Description : H alts the instruction execution. To resume, an interrupt m ust de received. Details : Mnemonic HALT Flags : S S Z H V N C Z H V N = = = = = = Code 0|0|0|0|0|1|0|1 C No change
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TLCS-900/H
CPU900H-82
0002H,
CPU900H-113
CPU900H-114
PC 1278H
123AH
00123457H
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whn 316
Abstract: No abstract text available
Text: ALUMINUM ELECTROLYTIC CAPACITORS n x c k ic o n Miniature S zed VR Approved by Reliability Center ter Electronic Component. Japan-Certlflcaticn No. RCJ-Q3-22C series VZ Ib t i One rank sma er case sze s than VX series. VR VK IS p e d fi cations P e r i o r m a r l e C rv a ra c te rH C c s
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RCJ-03-22C
3393CVF
123Hz,
60-450V
25x50
422x10
22x50
25x33
22x43
25x30
whn 316
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LG color tv Circuit Diagram schematics
Abstract: MD 1803 FX MN102L35G 27C202 eprom 711S SERVICE MANUAL Panasonic Panasonic color television schematic diagram ls010 lg led tv internal parts block diagram LG 631 TV LG
Text: P a n iB r i n g i n g a X S ‘l o m o T r o z v MICROCOMPUTER MN102L35G LSI User Manual Ver. 2.20 March 6, 1998 Panasonic • ^ 3 2 6 5 2 0016705 273 ■ This Material Copyrighted By Its Respective Manufacturer e rie s t o ‘T o d a y Restrictions and Warnings Regarding the Use of the Technical Data and the
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MN102L35G
001fl7fl5
LG color tv Circuit Diagram schematics
MD 1803 FX
27C202 eprom
711S
SERVICE MANUAL Panasonic
Panasonic color television schematic diagram
ls010
lg led tv internal parts block diagram
LG 631 TV LG
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diode lt 8220
Abstract: diode LT 8233 Monsanto segment display lt 8242 6e2 tube Signetics NE561B Signetics NE561 R/diode lt 8232 lt 8232
Text: Copyright 1974 SIGNETICS CORPORATION Signetics C o rp o ra tio n reserves th e rig h t to m ake changes in th e pro d u c ts contained in th is b o o k in order to im prove design o r perform ance and to supp ly the best possible p ro d u c t. Signetics C o rp o ra tio n assumes no re sp o n s ib ility fo r the use o f any c irc u its described herein and
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TMP94FD53IF
Abstract: bosch ecu 0 261 200 100 connection diagram TFK E 1024 xz 117 sb900 bosch MA 3.1 ecu tt 4458 IRFP11 TMP94F
Text: TO S H IB A TMP92CW53IF/TMP92CU53IF TMP94FD53IF Specification Revision 1.8 18 Apr 2002 H istory R e visio n D ate N ote 1.0 29 A p r. 2 0 0 0 In itial d ra ft 1.1 1.2 31 M a v 2 0 0 0 5 J u ly 2 0 0 0 31 A u g . 2 0 0 0 A m is ta k e c o rre c tio n A d d itio n 3 .3 F la sh M e m o ry , 3 .4 S in g le B o o t M o d e T M P 9 4 F D 5 3 F
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TMP92CW53IF/TMP92CU53IF
TMP94FD53IF
94FD53I-49
TMP94FD53I
94FD53I-50
94FD53I
bosch ecu 0 261 200 100 connection diagram
TFK E 1024
xz 117
sb900
bosch MA 3.1 ecu
tt 4458
IRFP11
TMP94F
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2N2937
Abstract: 27c03 sp2639 2n760A Jan 2N2453 2N2903A 2N757 2N759AJ 2n2915 203 2n2484
Text: RAYTHEON/ "ä ? SEMICONDUCTOR 7597360 D eT | 7 5 ^ 7 3 ^ 0 G G D B S a S Ì 27C RAYTHEON CO» D Low Level, Low Noise, High Gain Amplifiers RAYTHEON CL 0353 5 SMALL SIGNAL TRANSISTORS PRODUCT SPECIFICATIONS NPN Popular Types Description General purpose am plifier for low
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2N930/JAN
2N2484/JAN
2N3117
2N930JAN
2N2484JAN
54BSC
27BSC
100BSC
050BSC
-100BSC
2N2937
27c03
sp2639
2n760A Jan
2N2453
2N2903A
2N757
2N759AJ
2n2915 203
2n2484
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D27C64
Abstract: intel D27c64 rt 7257 NEC D27C64 ha 11747 D27C64 intel nec A2C 71454 upd27c64
Text: ì ; SEC OM ,y NEC Electronics Inc. 006074 Pin C onfiguration A d is tin c tiv e fe atu re o f the ¿/PD27C64 is an o u tp u t enable OE separate fro m the c h ip enable (CE). The OE c o n tro l elim ina tes bus c o n te n tio n in m u ltip le -b u s m icro p ro c e s s o r systems. The//P D 27C 6 4 features fast,
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27C64
uPD27C64
536-bit
/PD27C64
D27C64
intel D27c64
rt 7257
NEC D27C64
ha 11747
D27C64 intel
nec A2C
71454
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msm27c402zb
Abstract: No abstract text available
Text: O K I Semiconductor MSM27C402ZB : 262,144-Word x 16-Bit or 524,288-Word x 8-Bit One Time PROM D E S C R IP TIO N Jlo^nrS^ 27C4<!2f BJ l a 4 Mb CleCtriCally Programmable Read-Only Memory whose configuration can be o n e rlli f d between 262' 144 w ords x 16 bits and 524,288 w ords x 8 bits. The MSM27C402ZB
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MSM27C402ZB
144-Word
16-Bit
288-Word
27C40t2fB
MSM27cSo2ZB
40-Pin
b72424D
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VF9-VF10
Abstract: 3032B oscillator VF5 LA6358M
Text: SANYO SEMICONDUCTOR CORP 1SE I _ _ d T| 7 T c] 7 D ? t j DDG3177 . “ LA6358M Monolithic Linear 1C 3032B High-Performance Dual Operational Amplifier Ü 27C The LA6358M consists of two independent, high-performance, internally phase compensated operational amplifiers
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DDG3177
LA6358M
3032B
LA6358M
QQH17C
6358M
VF9-VF10
3032B
oscillator VF5
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET S8838A Power GaAs FETs Chip Form Features • High power - P-idB = 33.5 dBm at f = 8 GHz • High gain - G 1dB = 5.5 dB at f = 8 GHz • Suitable for C-Band amplifier • Ion implantation RF Performance Specifications (Ta = 25° C)
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S8838A
S8838A
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Untitled
Abstract: No abstract text available
Text: INTERNATIONAL CMOS TECHNOLOGY, INC. 27CX321 /27CX322 4,096 X 8-bit CMOS High-Speed Erasable PROM Features Reprogrammablllty Advanced CMOS EPROM Technology — Adds convenience, reduces costs — Windowed package for UV erasure — Allows 100% factory testing
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27CX321
/27CX322
27CX321/322-35
27CX321/322-40
27CX321/322-45
500nA
300-mil
600-mil
27CX3ld
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET S8838A Power GaAs FETs Chip Form Features • High power - P idB = 33.5 dBm at f = 8 GHz • High gain - G idB = 5.5 dB at f = 8 GHz • Suitable for C-Band am plifier • Ion implantation RF Performance Specifications (Ta = 25° C)
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S8838A
S8838A
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET S8836A Power GaAs FETs Chip Form Features • High power - P idB = 29.5 dBm at f = 8 GHz • High gain - G 1dB = 7.5 dB at f = 8 GHz • Suitable for C-Band am plifier • Ion implantation RF Performance Specifications (Ta = 25° C)
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S8836A
S8836A
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S8837A
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET S8837A Power GaAs FETs Chip Form Features • High power - P idB = 32 dBm at f = 8 GHz • High gain - G 1dB = 7 dB at f = 8 GHz • Suitable for C-Band am plifier • Ion implantation RF Performance Specifications (Ta = 25° C)
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S8837A
350COR
S8837A
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M27C1024
Abstract: PLCC44 Q0-Q15
Text: iiLiisinsMQes SGS-THOMSON M 27C 1024 1 Mb 64K x 16 UV EPROM and OTP EPROM • 5 V ± 1 0 % SUPPLY VOLTAGE in READ OPERATION ■ FAST ACCESS TIME: 35ns ■ LOW POWER CONSUMPTION: - Active Current 35mA - Standby Current IOOjiA ■ PROGRAMMING VOLTAGE: 12.75V ± 0.25V
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M27C1024
0020h
008Ch
M27C1024
FDIP40W
PLCC44
TSQP40
PLCC44
Q0-Q15
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MSM27C802ZB
Abstract: No abstract text available
Text: O K I Semiconductor MSM27C802ZB 524,288-W ord x 16-Bit o r 1,048,576-W ord x 8-Bit O ne T im e PRO M D ESCR IPTIO N The M SM 27C802ZB is an 8 Mb electrically Program mable Read-Only M em ory whose configuration can be electrically switched betw een 524,288 words x 16 bits and 1,048,576 words x 8 bits. The M SM 27C802ZB
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MSM27C802ZB
288-Word
16-Bit
576-Word
MSM27C802ZB
42-pin
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Untitled
Abstract: No abstract text available
Text: >*•« « a u D i a n a l 9 IS M 5M 27C401K-12, -15 4 1 9 4 3 0 4 - B IT 5 2 4 2 8 8 - W 0 R D BY 8 -B IT CMOS ERASABLE AND ELECTRICALLY REPROGRAMMABLE ROM DESCRIPTION The Mitsubishi M 5 M 2 7 C 4 0 1 K is a high-speed 4 1 9 4 3 0 4 -b it ultraviolet erasable and electrically reprogrammable read
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27C401K-12,
120ns
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intel 27c512 eprom
Abstract: 27C512-200V10 i27C512 d27c512 27C512-120V10 I27C256 intel 27c512 29022 27C512-1 27C512-2
Text: INTEL CORP MEMORY/LOGIC 50E D • 4fl2hl7b GObböOH *4 ■ In te l' T -V L -lS -tS 27C512 *T“-V6-/3 -29 512K (64K x 8) CHMOS PRODUCTION AND UV ERASABLE PROMS ■ Software Carrier Capability ■ 120 ns Access Time ■ Two-Line Control ■ Inteligent identifier Mode
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27C512
27C512
288-bit
T-46-13-29
intel 27c512 eprom
27C512-200V10
i27C512
d27c512
27C512-120V10
I27C256
intel 27c512
29022
27C512-1
27C512-2
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27c1000
Abstract: No abstract text available
Text: E i. SCS-TTIOMSON M 27C 1000 ItLG 1024K 128K x 8 CMOS UV EPROM - OTP ROM INTERCHANGEABLE WITH 1M BIT MASKED ROM (ROM PIN OUT). VERY FAST ACCESS TIME : 120ns. COM PATIBLE WITH HIGH SPEED MICRO PROCESSORS, ZERO W AIT STATE. LOW "CMOS" POWER COM SUMPTION :
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1024K
120ns.
27C1000
DIP32
M27C1000-15XC1
PLCC32
M27C1000-20XC1
M27C1000-15C1
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