Untitled
Abstract: No abstract text available
Text: bMETSaS OOMöTTI TMÖ • NECE NEC Fast Static RAMs ORGANIZATION FEATURES PACKAGE 128K x 8 Output enable 4SOJ 400-mil 15 ns 17 ns 20 ns |iPD431008LE - 15 - 17 -2 0 128K x 9 Output enable SOJ (400-mil) 15 ns 17 ns 20 ns |i.PD431009LE -1 5 -1 7 -2 0 6 4 K x 16
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OCR Scan
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400-mil)
iPD431008LE
PD431009LE
PD431016LE
HPD434001LE
HPD434004LE
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PDF
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d431008
Abstract: No abstract text available
Text: DATA SHEET Æ MOS INTEGRATED CIRCUIT C ¿¿PD431008 1M-BIT CMOS FAST STATIC RAM 128K-WORD BY 8-BIT Description The ¿iPD431008 is a high speed, lo w po w e r, 1 048 576 b its 131 072 w o rd s by 8 bits CMOS s ta tic RAM. The jt/PD431008 is packed in 32-pin p la stic SOJ.
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OCR Scan
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PD431008
128K-WORD
iPD431008
jt/PD431008
32-pin
Acc400
040-o
016to
008tg
P431008
d431008
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PDF
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d431008
Abstract: OA12AO
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT /¿PD431008 1M-BIT CMOS FAST STATIC RAM 128K-WORD BY 8-BIT Description The /¿PD431008 is a high speed, lo w power, 1 048 576 bits 131 072 w o rds by 8 bits CMOS sta tic RAM. The /JPD431008 is packed in 32-pin plastic SOJ.
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OCR Scan
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128K-WORD
uPD431008
32-pin
PD431008m
/PD431008.
JPD431008
iiPD431008LE:
d431008
OA12AO
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PDF
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT ¿¿PD431008L 1M-BIT CMOS FAST STATIC RAM 128K-WORD BY 8-BIT D e s c rip tio n The /JPD431008L is a high speed, lo w pow er, 1, 048, 576 bits 131, 072 w o rd s by 8 bits CMOS sta tic RAM. O p e ra tin g s u p p ly vo lta g e is 3.3 V ± 0.3 V.
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OCR Scan
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uPD431008L
128K-WORD
/JPD431008L
PD431008L
32-pin
/iPD431008LLE-A17
iiPD431008LLE-A20
0081o
/iPD431008L.
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PDF
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT ¿¿PD431008L 1 M-BIT CMOS FAST STATIC RAM 128 K-WORD BY 8-BIT Description The /¿PD431008L is a high speed, low power, 1, 048, 576 bits 131, 072 words by 8 bits CMOS static RAM. Operating supply voltage is 3.3 V ± 0.3 V.
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OCR Scan
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PD431008L
PD431008L
//PD431008L
32-pin
fjPD431008LLE-A17
/JPD431008LLE-A20
DDbM31S
iiPD431008LLE:
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PDF
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d431008
Abstract: No abstract text available
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT ¿¿PD431008 1M-BIT CMOS FAST STATIC RAM 128K-WORD BY 8-BIT Description T h e ¿¡P D 431008 ¡s a h ig h sp e e d , lo w p o w e r, 1 0 4 8 576 b its 131 072 w o rd s b y 8 b its C M O S s ta tic R A M . T h e j i P D 4 3 1 00 8 is p a cke d in 32-p in p la s tic S O J .
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OCR Scan
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uPD431008
128K-WORD
d431008
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PDF
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT /¿PD431008L 1M-BIT CM OS FAST STATIC RAM 128K-WORD BY 8-BIT D escription The,uPD431008L is a high speed, low power, 1, 048, 576 bits 131,072 w ords by 8 bits CMOS static RAM. Operating supply voltage is 3.3 V ± 0.3 V.
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OCR Scan
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PD431008L
128K-WORD
uPD431008L
32-pin
PD431008LLE-A17
431008LLE-A20
b427525
oo8t8885
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PDF
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Untitled
Abstract: No abstract text available
Text: NEC NEC Electronics Inc. iPD431008 131,072 X 8-Bit Static CMOS RAM Description Pin Configuration The /JPD431008 is a 131,072-word by 8-bit static RAM fabricated with advanced silicon-gate technology. Its unique design uses CMOS peripheral circuits and Nchannel memory cells to make the /yPD431008 a high
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OCR Scan
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fiPD431008
/JPD431008
072-word
/yPD431008
/L/PD431008
32-pin
tPD431008
JUPD431008
JJPD431008
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PDF
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT / ¿ P D 4 3 1 8 L 1 M-BIT CMOS FAST STATIC RAM 128 K-WORD BY 8-BIT Description T he /¿PD431008L is a high speed, low power, 1, 048, 576 bits 131, 072 w ords by 8 bits C M O S static RAM. O perating supply voltage is 3.3 V ± 0.3 V.
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OCR Scan
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uPD431008L
32-pin
431008L.
MPD431008L
iPD431008LLE:
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PDF
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