Untitled
Abstract: No abstract text available
Text: FFH60UP60S, FFH60UP60S3 tm Features 60A, 600V Ultrafast Rectifier • High Speed Switching, rrt < 80ns • High Reverse Voltage and High Reliability The FFH60UP60S and FFH60UP60S3 are ultrafast rectifiers with low forward voltage drop. it is a silicon nitride passivated ionimplanted epitaxial planar construction.
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FFH60UP60S,
FFH60UP60S3
FFH60UP60S
FFH60UP60S3
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Untitled
Abstract: No abstract text available
Text: RHRP860_F085 September 2011 Data Sheet 8A,600V Hyperfast Diodes Features The RHRP860_F085 is hyperfast diodes with soft recovery characteristics trr < 30ns . It has half the recovery time of ultrafast diodes and is silicon nitride passivated ion-implanted epitaxial planar construction.
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RHRP860
175oC
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fqt1n80
Abstract: No abstract text available
Text: QFET FQT1N80TF_WS N-Channel MOSFET 800V, 0.2A, 20Ω Features Description • RDS on = 15.5Ω (Typ.)@ VGS = 10V, ID = 0.1A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
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FQT1N80TF
fqt1n80
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FDD390N15
Abstract: No abstract text available
Text: FDD390N15A N-Channel PowerTrench MOSFET 150V, 26A, 40mΩ Features Description • RDS on = 33.5mΩ ( Typ.)@ VGS = 10V, ID = 26A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench process that has been especially tailored to minimize the on-state resistance and yet
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FDD390N15A
FDD390N15A
JESD22-A113F
J-STD-020D
FDD390N15
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JESD22-A113F
Abstract: Fdb020n08 N_CHANNEL MOSFET 100V MOSFET
Text: FDB024N08BL7 N-Channel PowerTrench MOSFET 80V, 229A, 2.4mΩ Features Description • RDS on = 1.7mΩ ( Typ.) @ VGS = 10V, ID = 100A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench process that has been especially tailored to minimize the on-state resistance and yet
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FDB024N08BL7
FDB024N08BL7
JESD22-A113F
J-STD-020D
Fdb020n08
N_CHANNEL MOSFET 100V MOSFET
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Untitled
Abstract: No abstract text available
Text: FDMA530PZ Single P-Channel PowerTrench MOSFET –30V, –6.8A, 35mΩ Features General Description Max rDS on = 35mΩ at VGS = –10V, ID = –6.8A This device is designed specifically for battery charge or load switching in cellular handset and other
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FDMA530PZ
FDMA530PZ
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Untitled
Abstract: No abstract text available
Text: FDMC7692 N-Channel Power Trench MOSFET 30 V, 13.3 A, 8.5 m: Features General Description Max rDS on = 8.5 m: at VGS = 10 V, ID = 13.3 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This
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FDMC7692
FDMC7692
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Untitled
Abstract: No abstract text available
Text: FDS86106 N-Channel Power Trench MOSFET 100 V, 3.4 A, 105 mΩ Features General Description ̈ Max rDS on = 105 mΩ at VGS = 10 V, ID = 3.4 A This ̈ Max rDS(on) = 171 mΩ at VGS = 6 V, ID = 2.7 A Semiconductor‘s advanced Power Trench® process that has
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FDS86106
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Mosfet 100V 50A
Abstract: FDP150N10A
Text: FDP150N10A_F102 tm N-Channel PowerTrench MOSFET 100V, 50A, 15mΩ Features Description • RDS on = 12.5mΩ ( Typ.)@ VGS = 10V, ID = 50A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench process that has been especially tailored to minimize the on-state resistance and yet
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FDP150N10A
Mosfet 100V 50A
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Untitled
Abstract: No abstract text available
Text: FDPF390N15A N-Channel PowerTrench MOSFET 150V, 15A, 40mΩ Features Description • RDS on = 31mΩ ( Typ.)@ VGS = 10V, ID = 15A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench process that has been especially tailored to minimize the on-state resistance and yet
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FDPF390N15A
FDPF390N15A
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FDP027N08
Abstract: FDP027N08B 200A battery charger
Text: FDP027N08B_F102 N-Channel PowerTrench MOSFET 80V, 223A, 2.7mΩ Features Description • RDS on = 2.21mΩ ( Typ.) @ VGS = 10V, ID = 100A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench process that has been especially tailored to minimize the on-state resistance and yet
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Untitled
Abstract: No abstract text available
Text: FDT86256 N-Channel PowerTrench MOSFET 150 V, 1.2 A, 845 mΩ Features General Description ̈ Max rDS on = 845 mΩ at VGS = 10 V, ID = 1.2 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and
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FDT86256
OT-223
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Untitled
Abstract: No abstract text available
Text: FDMC7582 N-Channel PowerTrench MOSFET 25 V, 49 A, 5.0 mΩ Features General Description Max rDS on = 5.0 mΩ at VGS = 10 V, ID = 16.7 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node
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FDMC7582
FDMC7582
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marking G4
Abstract: 1B65 FDMQ8403
Text: FDMQ8403 N-Channel PowerTrench MOSFET 100 V, 6 A, 110 mΩ Features General Description This quad MOSFET solution provides ten-fold improvement in power dissipation over diode bridge. Max rDS on = 110 mΩ at VGS = 10 V, ID = 3 A Max rDS(on) = 175 mΩ at VGS = 6 V, ID = 2.4 A
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FDMQ8403
FDMQ8403
marking G4
1B65
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fga70n33
Abstract: fga70n33btd FGA70N33BTDTU
Text: FGA70N33BTD tm 330V, 70A PDP IGBT Features General Description • High current capability Using Novel Trench IGBT Technology, Fairchild’s new series of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are
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FGA70N33BTD
FGA70N33BTD
fga70n33
FGA70N33BTDTU
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Untitled
Abstract: No abstract text available
Text: FDD8453LZ_F085 N-Channel Power Trench MOSFET 40V, 50A, 6.5mΩ Features Typ rDS on = 5mΩ at VGS = 10V, ID = 15A General Description Typ rDS(on) = 6mΩ at VGS = 4.5V, ID = 13A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that
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FDD8453LZ
O-252)
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Untitled
Abstract: No abstract text available
Text: FGA90N33ATD 330V, 90A PDP Trench IGBT Features General Description • High current capability Using Novel Trench IGBT Technology, Fairchild’s new series of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential.
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FGA90N33ATD
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FDD390N15
Abstract: FDD39
Text: FDD390N15A N-Channel PowerTrench MOSFET 150V, 26A, 40mΩ Features Description • RDS on = 33.5mΩ ( Typ.)@ VGS = 10V, ID = 26A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench process that has been especially tailored to minimize the on-state resistance and yet
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FDD390N15A
FDD390N15A
FDD390N15
FDD39
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100V 100A Mosfet
Abstract: FDPF045N10A
Text: FDPF045N10A N-Channel PowerTrench MOSFET 100V, 67A, 4.5mΩ Features Description • RDS on = 3.7mΩ ( Typ.)@ VGS = 10V, ID = 67A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench process that has been especially tailored to minimize the on-state resistance and yet
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FDPF045N10A
FDPF045N10A
100V 100A Mosfet
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MOSFET 50V 100A TO-220
Abstract: MOSFET 50V 100A FDP045N10A FDI045N10A
Text: FDP045N10A_F102 / FDI045N10A_F102 N-Channel PowerTrench MOSFET 100V, 164A, 4.5mΩ Features Description • RDS on = 3.8mΩ ( Typ.)@ VGS = 10V, ID = 100A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench process that has been
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FDP045N10A
FDI045N10A
MOSFET 50V 100A TO-220
MOSFET 50V 100A
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Untitled
Abstract: No abstract text available
Text: 2SK2019-01 F U JI P O W E R M O S-FET N-CHANNEL SILICON POWER MOS-FET FAP-IIA SERIES Outline Drawings • =eatures • H g h speed switching 03.6±O.2 • L j w on-resistance *5*0.2 • l\o secondary breakdown • L dw driving power • I-igh voltage Gale
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2SK2019-01
O-220AB
54i0-2
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Untitled
Abstract: No abstract text available
Text: B U R R -B R O W N ' [ 3521 SERIES 3522 SERIES 1 NOT RECOMMENDED FOR NEW DESIGNS Ultra-Low Drift - FET Input OPERATIONAL AMPLIFIERS FEATURES • ULTRA-LOW DRIFT. 1MV /° C max • LOW INITIAL OFFSET VOLTAGE. 25 0MV, max • LOW BIAS CURRENT, Ip A . max • LOW NOISE
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3500E
15VDC
20VDC
3522J.
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2SK831
Abstract: T108 T460 2SK83
Text: M o s h = 7 > > ^ M O S Field E ffe c t P o w e r T ra n s is to r N f - t ^ /N° 7 - M O S FET i i f f l 2SK831 ü , t ì s t a f f i < , N - f -v x X / > h -i •/ - f > ¿ 'I i t t i - « B ' ' OT7 — M O S F E T T ' + > 1 , r H I T O m : mm) «5 3.2 + 0.2
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2SK831
2SK831
T108
T460
2SK83
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bTI51
Abstract: fsjc F4CJ 2SJ209 TF230
Text: 5s—S ,T NEC • 2/— f~~ M O S Field Effect Transistor A l? r / v f7 2SJ209 MOS FET X ' f ' y & 2 S J 2 0 9 l i P f - ^ ^ ^ * i ^ M O S FETT", 5 < fc > yt > ^M O S FET 7 M ? T f F R K 2.8 ±0.2 t o IÌ.X4 "/r &0, t ' ^ / K U S S - 1.5 L T ^ iiT 't o I-
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2SJ209
IEI-620)
bTI51
fsjc
F4CJ
2SJ209
TF230
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