IRF 511 MOSfet
Abstract: IRF5850 IRF5851 IRF5852 IRF5805PBF mosfet 23 Tsop-6
Text: PD -95340 IRF5805PbF HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free VDSS RDS on max ID -30V 0.098@VGS = -10V 0.165@VGS = -4.5V -3.8A Description These P-channel MOSFETs from International Rectifier
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IRF5805PbF
OT-23.
IRF 511 MOSfet
IRF5850
IRF5851
IRF5852
IRF5805PBF
mosfet 23 Tsop-6
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mosfet p-channel 300v irf
Abstract: P-Channel 200V MOSFET TSOP6 Si3443DVPbF IRF5850 IRF5851 IRF5852 mosfet 23 Tsop-6 PD-95240 p-channel 250V 30A power mosfet IRF 100A 500V
Text: PD-95240 i3443DVPbF HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel -2.5V Rated Lead-Free D A D 1 6 2 5 3 4 VDSS = -20V D G D S RDS on = 0.065Ω Top View Description These P-channel MOSFETs from International Rectifier
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PD-95240
Si3443DVPbF
OT-23.
mosfet p-channel 300v irf
P-Channel 200V MOSFET TSOP6
IRF5850
IRF5851
IRF5852
mosfet 23 Tsop-6
PD-95240
p-channel 250V 30A power mosfet
IRF 100A 500V
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IRF5820
Abstract: IRF5806 IRF5800 SI3443DV 3D marking sot23 sot-23 Marking 3D
Text: PD - 93997A IRF5806 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge VDSS RDS on max ID -20V 86mΩ@VGS = -4.5V 147mΩ@VGS = -2.5V -4.0A Description These P-channel MOSFETs from International Rectifier
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3997A
IRF5806
OT-23.
space252-7105
IRF5820
IRF5806
IRF5800
SI3443DV
3D marking sot23
sot-23 Marking 3D
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IRf 334
Abstract: No abstract text available
Text: PD - 95503 IRF5804PbF HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free VDSS RDS on max (mW) ID -40V 198@VGS = -10V 334@VGS = -4.5V -2.5A -2.0A Description These P-channel HEXFET® Power MOSFETs from
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IRF5804PbF
OT-23.
IRf 334
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Untitled
Abstract: No abstract text available
Text: PD -94029A IRF5805 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge VDSS RDS on max ID -30V 0.098@VGS = -10V 0.165@VGS = -4.5V -3.0A Description These P-channel MOSFETs from International Rectifier
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-94029A
IRF5805
OT-23.
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irf MOSFET p-CH
Abstract: IRF P CHANNEL MOSFET marking 27A sot-23 IRF5800 IRF5851 IRF5852 IRF n CHANNEL MOSFET marking 25b sot23
Text: PD-95341 IRF5851PbF HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free G1 1 6 D1 S2 2 5 S1 G2 3 4 D2 VDSS N-Ch P-Ch 20V -20V RDS on 0.090Ω 0.135Ω Description
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PD-95341
IRF5851PbF
irf MOSFET p-CH
IRF P CHANNEL MOSFET
marking 27A sot-23
IRF5800
IRF5851
IRF5852
IRF n CHANNEL MOSFET
marking 25b sot23
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Untitled
Abstract: No abstract text available
Text: PD - 93997A IRF5806 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge VDSS RDS on max ID -20V 86mΩ@VGS = -4.5V 147mΩ@VGS = -2.5V -3.0A Description These P-channel MOSFETs from International Rectifier
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3997A
IRF5806
OT-23.
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power MOSFET IRF data
Abstract: IRF Power MOSFET code marking IRF5850PBF mosfet p-channel 10A irf IRF5800 IRF5801 IRF5850 IRF5852 mosfet irf p-channel irf 2010
Text: PD - 95506 IRF5850PbF HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free VDSS = -20V RDS on = 0.135Ω Top View Description These P-channel MOSFETs from International Rectifier
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IRF5850PbF
IRF5850
power MOSFET IRF data
IRF Power MOSFET code marking
IRF5850PBF
mosfet p-channel 10A irf
IRF5800
IRF5801
IRF5852
mosfet irf p-channel
irf 2010
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IRF Power MOSFET code marking
Abstract: IRF MOSFET 10A P power MOSFET IRF data MOSFET 150 N IRF IRF n 30v MOSFET IRF 5804 IRF5800 IRF5801 MOSFET IRF 94 IRF5852
Text: PD - 95476A IRF5806PbF HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free VDSS RDS on max ID -20V 86mΩ@VGS = -4.5V 147mΩ@VGS = -2.5V -4.0A Description These P-channel MOSFETs from International Rectifier
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5476A
IRF5806PbF
OT-23.
IRF Power MOSFET code marking
IRF MOSFET 10A P
power MOSFET IRF data
MOSFET 150 N IRF
IRF n 30v
MOSFET IRF 5804
IRF5800
IRF5801
MOSFET IRF 94
IRF5852
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Untitled
Abstract: No abstract text available
Text: PD - 96411A IRFTS9342PbF HEXFET Power MOSFET VDS -30 V VGS max ±20 V D 40 mΩ 66 mΩ 12 nC -5.8 A RDS on max (@VGS = -10V) RDS(on) max (@VGS = -4.5V) Qg typ ID (@TA= 25°C) A D 1 6 D 2 5 D G 3 4 S TSOP-6 Top View Applications l l Battery operated DC motor inverter MOSFET
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6411A
IRFTS9342PbF
IRFTS9342TRPbF
D-020D
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IRFTS9342TRPBF
Abstract: 8342T IRFTS9342 6342T TSOP6 Marking Code 17 IRF 840 MOSFET IRF n 30v IRF5803
Text: PD - 96411A IRFTS9342PbF HEXFET Power MOSFET VDS -30 V VGS max ±20 V D 1 6 40 mΩ D 2 5 D 66 mΩ G 3 4 S 12 nC -5.8 A RDS on max (@VGS = -10V) RDS(on) max (@VGS = -4.5V) Qg typ ID (@TA= 25°C) A D TSOP-6 Top View Applications l l Battery operated DC motor inverter MOSFET
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6411A
IRFTS9342PbF
IRFTS9342TRPbF
D-020D
IRFTS9342TRPBF
8342T
IRFTS9342
6342T
TSOP6 Marking Code 17
IRF 840 MOSFET
IRF n 30v
IRF5803
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IRLTS6342TRPBF
Abstract: IRLTS6342 m4570 irlts6342tr irf5850
Text: PD - 97730 IRLTS6342PbF VDS VGS 30 ±12 V V RDS on max 17.5 mΩ (@VGS = 4.5V) RDS(on) max (@VGS = 2.5V) Qg (typical) ID (@TA = 25°C) 22.0 mΩ 11 nC 8.3 A HEXFET Power MOSFET D 1 6 D D 2 5 D G 3 4 S TSOP-6 Applications • System/Load Switch Features and Benefits
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IRLTS6342PbF
IRLTS6342TRPBF
D-020D
IRLTS6342TRPBF
IRLTS6342
m4570
irlts6342tr
irf5850
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IRF5820
Abstract: SI3443DV IRF5800 IRF5850
Text: PD - 93947A IRF5850 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge VDSS = -20V RDS on = 0.135Ω Top View Description These P-channel MOSFETs from International Rectifier
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3947A
IRF5850
IRF5850
OT-23
IRF5820
SI3443DV
IRF5800
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Untitled
Abstract: No abstract text available
Text: PD-95262 IRF5803PbF l l l l l l HEXFET Power MOSFET Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free VDSS RDS on max (mW) ID -40V 112@VGS = -10V 190@VGS = -4.5V -3.4A -2.7A Description These P-channel HEXFET® Power MOSFETs from
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PD-95262
IRF5803PbF
OT-23.
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IRF5850
Abstract: IRF5801 IRF5806 IRF5851 IRF5852 I3443DV IRF5803 MOSFET IRF 5805 IRF 2004
Text: IRF5810PbF Electrical Characteristics @ TJ = 25°C unless otherwise specified ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage
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IRF5810PbF
IRF5803
IRF5802
IRF5850
IRF5801
IRF5806
IRF5851
IRF5852
I3443DV
IRF5803
MOSFET IRF 5805
IRF 2004
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Untitled
Abstract: No abstract text available
Text: PD - 97730 IRLTS6342PbF VDS VGS 30 ±12 V V RDS on max 17.5 mΩ (@VGS = 4.5V) RDS(on) max (@VGS = 2.5V) Qg (typical) ID (@TA = 25°C) 22.0 mΩ 11 nC 8.3 A HEXFET Power MOSFET D 1 6 D D 2 5 D G 3 4 S TSOP-6 Applications • System/Load Switch Features and Benefits
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IRLTS6342PbF
IRLTS6342TRPBF
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IRF5851
Abstract: n-p channel mosfet tsop6 IRF5800 SI3443DV TSOP 66 Package thermal resistance sot-23 MARKING CODE G1 variac
Text: PD-93998B IRF5851 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge G1 1 6 D1 S2 2 5 S1 G2 3 4 D2 VDSS N-Ch P-Ch 20V -20V RDS on 0.090Ω 0.135Ω Description These N and P channel MOSFETs from International Rectifier utilize advanced
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PD-93998B
IRF5851
IRF5851
n-p channel mosfet tsop6
IRF5800
SI3443DV
TSOP 66 Package thermal resistance
sot-23 MARKING CODE G1
variac
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IRF5820
Abstract: IRF5800 IRF5810 SI3443DV IRF5851
Text: PD -94198A IRF5810 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge VDSS RDS on max (mW) ID -20V 90@VGS = -4.5V -2.9A 135@VGS = -2.5V -2.3A Description These P-channel HEXFET® Power MOSFETs from
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-94198A
IRF5810
IRF5820
IRF5800
IRF5810
SI3443DV
IRF5851
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IRF5852
Abstract: IRF5800 IRF5805 IRF5806 IRF5850 IRF5851 SI3443DV IRF5820
Text: PD - 93999A IRF5852 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge VDSS RDS on max (W) ID 20 V 0.090@VGS = 4.5V 0.120@VGS = 2.5V 2.7A 2.2A Description These N-channel MOSFETs from International Rectifier
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3999A
IRF5852
IRF5852
IRF5800
IRF5805
IRF5806
IRF5850
IRF5851
SI3443DV
IRF5820
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IRF5820
Abstract: IRF5800 IRF5804 SI3443DV IRF5851 IRF5806 irf5852 sot-23 MARKING CODE 3d
Text: PD - 94333A IRF5804 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge VDSS RDS on max (mW) ID -40V 198@VGS = -10V 334@VGS = -4.5V -2.5A -2.0A Description These P-channel HEXFET® Power MOSFETs from
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4333A
IRF5804
OT-23.
IRF5820
IRF5800
IRF5804
SI3443DV
IRF5851
IRF5806
irf5852
sot-23 MARKING CODE 3d
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IRF5820
Abstract: IRF5800
Text: PD - 93850A IRF5800 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge D A D 1 6 2 5 3 4 VDSS = -30V D G D S RDS on = 0.085Ω Top View Description These P-channel MOSFETs from International Rectifier
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3850A
IRF5800
OT-23.
IRF5820
IRF5800
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IRF5820
Abstract: 94333 IRF5800 IRF5804 SI3443DV k 9632 sot-23 MARKING CODE 3d
Text: PD - 94333B IRF5804 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge VDSS RDS on max (mW) ID -40V 198@VGS = -10V 334@VGS = -4.5V -2.5A -2.0A Description These P-channel HEXFET® Power MOSFETs from
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94333B
IRF5804
OT-23.
IRF5820
94333
IRF5800
IRF5804
SI3443DV
k 9632
sot-23 MARKING CODE 3d
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IRF MOSFET 10A P
Abstract: IRF5810 IRF5850 IRF5851 IRF5852
Text: PD - 95469A IRF5810PbF HEXFET Power MOSFET Ultra Low On-Resistance Dual P-Channel MOSFET l Surface Mount l Available in Tape & Reel l Low Gate Charge l Lead-Free Description l l VDSS RDS on max (mW) ID -20V 90@VGS = -4.5V -2.9A 135@VGS = -2.5V -2.3A These P-channel HEXFET® Power MOSFETs from
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5469A
IRF5810PbF
IRF MOSFET 10A P
IRF5810
IRF5850
IRF5851
IRF5852
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R1223N252A
Abstract: 1223N
Text: run JL P RELIM INA R Y mos.is PWM/VFM step-down DC/DC Converter R1223N Series • OUTLINE The R1223N Series are PWM step-down DC/DC Converter controllers with low supply current by CMOS process. Each of these ICs consists of an oscillator, a PWM control circuit, a reference voltage unit, an error amplifier,
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R1223N
R1223N332A
R1223N252A
1223N
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