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    2SK1263

    Abstract: SC-65 2SK126
    Text: Power F-MOS FET 2SK1263 2SK1263 Silicon N-channel Power F-MOS FET Package Dimensions •Features • • • • Low ON resistance R d s on : R Ds (on) 1 = 0.04ft (typ.) High switching rate : t(= 195ns (typ.) No secondary breakdown High breakdown voltage


    OCR Scan     		PDF 2SK1263 195ns 21VOS-4V Tc-25C i32052 0D171bD 2SK1263 SC-65 2SK126