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    Abstract: No abstract text available
    Text: HY6N60T / HY6N60FT 600V / 6.0A 600V, RDS ON =1.8Ω@VGS=10V, ID=3.0A N-Channel Enhancement Mode MOSFET Features • • • • • • Low ON Resistance Fast Switching Low Gate Charge & Low CRSS Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charger and SMPS


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    PDF HY6N60T HY6N60FT 2002/95/EC ITO-220AB O-220AB O-220AB ITO-220AB MIL-STD-750 HY6N60T 6N60T