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    HVVI SEMICONDUCTORS Search Results

    HVVI SEMICONDUCTORS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    HVVI SEMICONDUCTORS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    mode 5 IFF

    Abstract: HVV1011-300 diode gp 429 hvvi "RF MOSFET" 300W 1030mhz hvv1011 1090mhz RF 1090MHz
    Text: The innovative Semiconductor Company! HVV1011-300 High Voltage, High Ruggedness L-Band Avionics Pulsed Power Transistor 1030/1090 MHz, 50µs Pulse, 5% Duty For TCAS, IFF and Mode-S Applications TM Features • Silicon MOSFET Technology • Operation from 24V to 50V


    Original     		PDF HVV1011-300 429-HVVi EG-01-DS02A EG-01-DS02A5 mode 5 IFF diode gp 429 hvvi "RF MOSFET" 300W 1030mhz hvv1011 1090mhz RF 1090MHz

    UHF TRANSISTOR

    Abstract: J152-ND J151-ND RF MOSFET CLASS AB Coaxicom transistor SMD g 28 100B100JP500X RC1206JR-07100KL smd transistor 259 4404 mosfet
    Text: The innovative Semiconductor Company! HVV0405-175 HIGH VOLTAGE, HIGH RUGGEDNESS UHF Pulsed Power Transistor 420-470 MHz, 300µs Pulse, 10% Duty Cycle For UHF band, Weather and Long Range Radar Applications TM FEATURES • Silicon MOSFET Technology • Operation from 24V to 50V


    Original     		PDF HVV0405-175 429-HVVi EG-01-DS10B 05/XX/09 UHF TRANSISTOR J152-ND J151-ND RF MOSFET CLASS AB Coaxicom transistor SMD g 28 100B100JP500X RC1206JR-07100KL smd transistor 259 4404 mosfet

    Cycle10s

    Abstract: mode 5 IFF L-band RF MOSFET transistor AZ 1
    Text: The innovative Semiconductor Company! HVV1012-250 High Voltage, High Ruggedness L-Band Avionics Pulsed Power Transistor 1025-1150 MHz, 10 s Pulse, 1% Duty Cycle For Airborne DME, TCAS and IFF Applications TM Features • Silicon MOSFET Technology • Operation from 24V to 50V


    Original     		PDF HVV1012-250 EG-01-DS09A 429-HVVi Cycle10s mode 5 IFF L-band RF MOSFET transistor AZ 1

    500W TRANSISTOR

    Abstract: hvvi
    Text: HVV1011-500L Product Overview L-Band High Power Pulsed Transistor 32us on/18us off x 48, LTDC 6.4% For L-band Radar Applications DESCRIPTION PACKAGE The high power HVV1011-500L device is a high voltage silicon enhancement mode RF transistor designed for L-band pulsed applications operating


    Original     		PDF HVV1011-500L on/18us HVV1011-500L EG-01-PO17X1 500W TRANSISTOR hvvi

    HVV0912-800

    Abstract: SEMICONDUCTORS INC
    Text: HVV0912-800 Preliminary Datasheet L-Band High Power Pulsed Transistor 960-1215 MHz, 10µs Pulse, 10% Duty Cycle For Ground and Air DME, TCAS and IFF Applications DESCRIPTION PACKAGE The high power HVV0912-800 device is a high voltage silicon enhancement mode RF transistor


    Original     		PDF HVV0912-800 HVV0912-800 429-HVVi EG-01-POXXX1 SEMICONDUCTORS INC

    MIL-STD-750D

    Abstract: L-Band 1200-1400 MHz 8 HJC Radar F-1200 HVV1214-25 HVVi Semiconductors
    Text: HVV1214-025 L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200µs Pulse, 10% Duty DESCRIPTION PACKAGE The high power HVV1214-25 device is a high voltage silicon enhancement mode RF transistor designed for L-Band pulsed radar applications operating over the frequency range from


    Original     		PDF HVV1214-025 HVV1214-25 MIL-STD-750D, MIL-STD-750D L-Band 1200-1400 MHz 8 HJC Radar F-1200 HVVi Semiconductors

    SM200

    Abstract: Radar HV400 Radar Transponder HVV1011-300 HVV1214-100
    Text: The innovative Semiconductor Company! Technology Overview TM A NEW APPROACH TO SILICON RF POWER TRANSISTOR DESIGN Today’s radar and avionics applications demand RF power amplifiers that can deliver higher power density in smaller packages and with greater reliability. But, the silicon technologies currently used in most power transistors


    Original     		PDF

    Radar

    Abstract: diode gp 429 HV400
    Text: HVV1012-100 HVV1012-100 L-Band Avionics Pulsed Power Transistor HVV1012-100 The innovative Semiconductor Company! L-Band Avionics MHz, Pulsed10µs Power Transistor 1025-1150 Pulse, 1% Duty L-Band Avionics Pulsed Power Transistor HVV1012-100 1025-1150 MHz, 10µs Pulse, 1% Duty


    Original     		PDF HVV1012-100 HVV1012-100 1025-1150Avionics 1025-1150MHz, 429-HVVi Radar diode gp 429 HV400

    diode gp 429

    Abstract: HVV1011-1000L interrogator transistor 1000W
    Text: HVV1011-1000L Preliminary Datasheet L-Band High Power Pulsed Transistor 32µs on/18us off x 48, LTDC 6.4% For Mode S-ELM Interrogator Applications DESCRIPTION PACKAGE The high power HVV1011-1000L device is a high voltage silicon enhancement mode RF transistor


    Original     		PDF HVV1011-1000L on/18us HVV1011-1000L on/18 429-HVVi EG-01-POXXXX 07/XX/09 diode gp 429 interrogator transistor 1000W

    AIRBORNE DME

    Abstract: transistor SMD 12W MOSFET transistor SMD 12W smd transistor code 12w RF Transistor S10-12
    Text: FEATURES ! GE PACKAGE Silicon MOSFET Technology Operation from 24V to 50V High Power Gain Extreme Ruggedness Internal Input and Output Matching Excellent Thermal Stability All Gold Bonding Scheme Pb-free and RoHS Compliant TYPICAL PERFORMANCE Table 1: Typical RF Performance in broadband text fixture at 25°C temperature with


    Original     		PDF HVV1012-550 1025MHz 1150MHz. AIRBORNE DME transistor SMD 12W MOSFET transistor SMD 12W smd transistor code 12w RF Transistor S10-12

    ERJ8GEYJ100V

    Abstract: Johanson Technology C1206C102K1RACTU C1206C103K1RACTU 445-4109-2-ND 478-2666-1-ND 251R15S
    Text: HVV1012-250 High Voltage, High Ruggedness L-Band Avionics Pulsed Power Transistor 1025-1150 MHz, 10µs Pulse, 1% Duty Cycle For Airborne DME, TCAS and IFF Applications FEATURES The innovative Semiconductor Company! Silicon MOSFET Technology Operation from 24V to 50V


    Original     		PDF HVV1012-250 429-HVVi EG-01-DS09B ERJ8GEYJ100V Johanson Technology C1206C102K1RACTU C1206C103K1RACTU 445-4109-2-ND 478-2666-1-ND 251R15S

    diode gp 429

    Abstract: HV400
    Text: HVV1012-100 HVV1012-100 L-Band Avionics Pulsed Power Transistor HVV1012-100 The innovative Semiconductor Company! L-Band Avionics MHz, Pulsed10µs Power Transistor 1025-1150 Pulse, 1% Duty L-Band Avionics Pulsed Power Transistor HVV1012-100 1025-1150 MHz, 10µs Pulse, 1% Duty


    Original     		PDF HVV1012-100 HVV1012-100 1025-1150Avionics 1025-1150MHz, 429-HVVi diode gp 429 HV400

    1030mhz

    Abstract: 2TD12 HV400 SM200 1090mhz
    Text: HVV1011-040 HVV1214-075 L-Band Avionics Pulsed Power Transistor HVV1011-040 The innovative Semiconductor Company! HVV1011-040 L-Band Radar Pulsed Power Transistor 1030-1090MHz, 50!s Pulse, 5% Transistor Duty L-Band Avionics Pulsed Power L-Band Avionics Pulsed


    Original     		PDF HVV1011-040 HVV1214-075 HVV1011-040 1030-1090MHz, HVV1011-035 1030mhz 2TD12 HV400 SM200 1090mhz

    L-Band 1200-1400 MHz

    Abstract: 4884 MOSFET HVV1214-100 radar circuit L-band RF MOSFET SEMICONDUCTORS INC 1200-1400 429 transistor 4884+MOSFET
    Text: The innovative Semiconductor Company! HVV1214-100 High Voltage, High Ruggedness L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200 s Pulse, 10% Duty For Ground Based Radar Applications TM Features • Silicon MOSFET Technology • Operation from 24V to 50V


    Original     		PDF HVV1214-100 EG-01-DS06A 429-HVVi L-Band 1200-1400 MHz 4884 MOSFET radar circuit L-band RF MOSFET SEMICONDUCTORS INC 1200-1400 429 transistor 4884+MOSFET

    j152

    Abstract: RF MOSFET CLASS AB L-Band 1200-1400 MHz 1030mhz HVV1214-100 5919CC-TB-7
    Text: The innovative Semiconductor Company! HVV1214-100 HIGH VOLTAGE, HIGH RUGGEDNESS L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200 s Pulse, 10% Duty Cycle For Ground Based Radar Applications TM FEATURES • Silicon MOSFET Technology • Operation from 24V to 50V


    Original     		PDF HVV1214-100 429-HVVi EG-01-DS06B j152 RF MOSFET CLASS AB L-Band 1200-1400 MHz 1030mhz 5919CC-TB-7

    1030-1090MHz

    Abstract: 4884 SM200 DS01A
    Text: HVV1011-035 L-Band High Power Pulsed Transistor 1030-1090MHz, 50µs, 5% Duty For TCAS and Mode-S Applications DESCRIPTION PACKAGE The high power HVV1011-035 device is a high voltage silicon enhancement mode RF transistor designed for L-band pulsed applications operating


    Original     		PDF HVV1011-035 1030-1090MHz, HVV1011-035 429-HVVi EG-01-DS01A 1030-1090MHz 4884 SM200 DS01A

    HVVi Semiconductors

    Abstract: SM200
    Text: HVV1214-025 L-Band High Power Pulsed Transistor 1200-1400MHz, 200µs, 10% Duty For Ground Based Radar Applications DESCRIPTION PACKAGE The high power HVV1214-025 device is a high voltage silicon enhancement mode RF transistor designed for L-band pulsed radar applications


    Original     		PDF HVV1214-025 1200-1400MHz, HVV1214-025 429-HVVi EG-01-DS05A HVVi Semiconductors SM200

    capacitor 10uF/63V

    Abstract: ds10a capacitor 100uF 50V capacitor 1206 63V hex head screws 10uf 63v capacitor AB-45 banana socket datasheet diode gp 429 SMD 1206 RESISTOR 100 OHMS
    Text: The innovative Semiconductor Company! HVV0405-175 High Voltage, High Ruggedness UHF Pulsed Power Transistor 400-500 MHz, 300 s Pulse, 10% Duty Cycle For UHF band, Weather and Long Range Radar Applications TM Features • Silicon MOSFET Technology • Operation from 24V to 50V


    Original     		PDF HVV0405-175 EG-01-DS10A 429-HVVi capacitor 10uF/63V ds10a capacitor 100uF 50V capacitor 1206 63V hex head screws 10uf 63v capacitor AB-45 banana socket datasheet diode gp 429 SMD 1206 RESISTOR 100 OHMS

    transistor s 1014

    Abstract: L-Band 1200-1400 MHz Radar radar circuit component x band radar HV400 SM200
    Text: HVV1214-025 HVV1214-025 L-BandRadar RadarPulsed PulsedPower PowerTransistor Transistor L-Band HVV1214-075 1200-1400 MHz,200!s 200!sPulse, Pulse,10% 10%Duty Duty HVV1214-025 The innovative Semiconductor Company! 1200-1400 MHz, L-Band Radar Pulsed Power Transistor


    Original     		PDF HVV1214-025 HVV1214-075 HVV1214-025 EG-01-PO05X5 429-HVVi EG-01-PO05X1 transistor s 1014 L-Band 1200-1400 MHz Radar radar circuit component x band radar HV400 SM200

    capacitor 10uF/63V

    Abstract: capacitor 220uF/63V J152 100 pf, ATC Chip Capacitor pF CAPACITOR 100v 100b*500x 10uf 63v capacitor capacitor 1206 63V ID Innovations resistor smd 1206 102
    Text: The innovative Semiconductor Company! HVV0912-150 HIGH VOLTAGE, HIGH RUGGEDNESS L-Band Avionics Pulsed Power Transistor 960-1215 MHz, 10µs Pulse, 10% Duty Cycle For Ground and Air DME, TCAS and IFF Applications TM FEATURES • Silicon MOSFET Technology • Operation from 24V to 50V


    Original     		PDF HVV0912-150 429-HVVi EG-01-DS11B capacitor 10uF/63V capacitor 220uF/63V J152 100 pf, ATC Chip Capacitor pF CAPACITOR 100v 100b*500x 10uf 63v capacitor capacitor 1206 63V ID Innovations resistor smd 1206 102

    L-Band 1200-1400 MHz

    Abstract: diode gp 429 Radar x band radar HV400
    Text: DESCRIPTION DESCRIPTION HVV1214-075 HVV1214-075 L-Band Radar Pulsed Power Transistor L-Band Radar Pulsed Power Transistor HVV1214-075 1200-1400 MHz, 200µs Pulse, 10% DutyDuty 1200-1400 MHz, 200µs Pulse, 10% The innovative Semiconductor Company! L-Band Radar Pulsed Power Transistor


    Original     		PDF HVV1214-075 HVV1214-075MHz, HVV1214-075 429-HVVi EG-01-PO08X4 L-Band 1200-1400 MHz diode gp 429 Radar x band radar HV400

    HVV1011-600

    Abstract: hvvi 1090MHZ
    Text: HVV1011-600 Preliminary Datasheet L-Band High Power Pulsed Transistor 50µs Pulse Width, 2% Duty Cycle For 1030-1090MHz IFF/TPR/TCAS Applications DESCRIPTION PACKAGE The high power HVV1011-600 device is a high voltage silicon enhancement mode RF transistor


    Original     		PDF HVV1011-600 1030-1090MHz HVV1011-600 HV800 MIL-STD-883, EG-01-PO15X4 hvvi 1090MHZ

    HVV1011-1000L

    Abstract: transistor 1000W 1000w power supply 1030 PULSED
    Text: HVV1011-1000L Preliminary Datasheet L-Band High Power Pulsed Transistor 32µs on/18us off x 48, repeated every 24ms For Mode S-ELM Interrogator Applications DESCRIPTION PACKAGE The high power HVV1011-1000L device is a high voltage silicon enhancement mode RF transistor


    Original     		PDF HVV1011-1000L on/18us HVV1011-1000L on/18 429-HVVi EG-01-POXXX2 transistor 1000W 1000w power supply 1030 PULSED

    HV400

    Abstract: 1030 mhz interrogator 1030 PULSED
    Text: HVV1011-075L Preliminary Datasheet L-Band High Power Pulsed Transistor 32µs on/18us off x 48, repeated every 24ms For Mode S-ELM Interrogator Applications DESCRIPTION PACKAGE The high power HVV1011-075L device is a high voltage silicon enhancement mode RF transistor


    Original     		PDF HVV1011-075L on/18us HVV1011-075L on/18 429-HVVi EG-01-POXXX1 HV400 1030 mhz interrogator 1030 PULSED