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    HV800 Search Results

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    HV800 Price and Stock

    Honeywell Sensing and Control CSHV800A-001

    CSHV800A-001 CURRENT SENSOR
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    DigiKey CSHV800A-001 Box 5 1
    • 1 $61.23
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    • 100 $49.68
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    Mouser Electronics CSHV800A-001 50
    • 1 $59.3
    • 10 $56.01
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    Newark CSHV800A-001 Bulk 25 1
    • 1 $46.84
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    RS CSHV800A-001 Bulk 7 Weeks 25
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    TTI CSHV800A-001 Bulk 25 5
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    Master Electronics CSHV800A-001
    • 1 $25.34
    • 10 $22.62
    • 100 $18.12
    • 1000 $16.45
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    TE Connectivity YHV800-2P-90-50M-B

    HVP800-2PHI XE,90,50SQMM,KEY B
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    DigiKey YHV800-2P-90-50M-B Box 3 1
    • 1 $165.22
    • 10 $132.004
    • 100 $132.004
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    Avnet Americas YHV800-2P-90-50M-B Bulk 6 Weeks 1
    • 1 $123.55545
    • 10 $122.49489
    • 100 $89.4232
    • 1000 $89.4232
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    Mouser Electronics YHV800-2P-90-50M-B 76
    • 1 $131.99
    • 10 $127.07
    • 100 $108.85
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    TTI YHV800-2P-90-50M-B Each 14 1
    • 1 $75
    • 10 $71
    • 100 $66
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    Interstate Connecting Components YHV800-2P-90-50M-B
    • 1 $167.6236
    • 10 $157.6162
    • 100 $118.2121
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    Avnet Abacus YHV800-2P-90-50M-B 9 Weeks 1
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    Master Electronics YHV800-2P-90-50M-B
    • 1 $150.86
    • 10 $144.17
    • 100 $120.07
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    YHV800-2P-90-50M-B
    • 1 $154.97
    • 10 $136.72
    • 100 $123.5
    • 1000 $123.5
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    Sager YHV800-2P-90-50M-B 1
    • 1 $155.3
    • 10 $146.67
    • 100 $146.67
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    Schaffner FN3359HV-800-99

    LINE FILTER 800A CHASSIS MOUNT
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    DigiKey FN3359HV-800-99 Tray 1 1
    • 1 $2419.51
    • 10 $2419.51
    • 100 $2419.51
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    Mouser Electronics FN3359HV-800-99
    • 1 $2419.5
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    Bristol Electronics FN3359HV-800-99 1
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    TME FN3359HV-800-99 1
    • 1 $2577.18
    • 10 $2577.18
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    Sager FN3359HV-800-99 1
    • 1 $2419.51
    • 10 $2419.51
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    STMicroelectronics STHV800L

    IC ULTRASOUND PULSER 56TFLGA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey STHV800L Tray
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    Avnet Americas STHV800L Tray 25 Weeks 260
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    • 1000 $38.556
    • 10000 $37.485
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    Mouser Electronics STHV800L
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    Newark STHV800L Bulk 3,575 1
    • 1 $52.55
    • 10 $52.55
    • 100 $52.55
    • 1000 $52.55
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    STMicroelectronics STHV800L 1
    • 1 $49.97
    • 10 $46.95
    • 100 $42.1
    • 1000 $39.38
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    Avnet Silica STHV800L 17 Weeks 260
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    EBV Elektronik STHV800L 520 26 Weeks 260
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    Win Source Electronics STHV800L 3,120
    • 1 $63.6203
    • 10 $42.4136
    • 100 $42.4136
    • 1000 $42.4136
    • 10000 $42.4136
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    Eaton Bussmann BK-S505H-V-800-R

    FUSE CERM 800MA 600VAC 400VDC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BK-S505H-V-800-R Bulk 100
    • 1 -
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    • 100 $5.5778
    • 1000 $5.5778
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    Newark BK-S505H-V-800-R Bulk 100
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    • 100 $5.38
    • 1000 $4.54
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    TME BK-S505H-V-800-R 100
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    • 100 $5.92
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    Sager BK-S505H-V-800-R 100
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    HV800 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    500W TRANSISTOR

    Abstract: hvvi
    Text: HVV1011-500L Product Overview L-Band High Power Pulsed Transistor 32us on/18us off x 48, LTDC 6.4% For L-band Radar Applications DESCRIPTION PACKAGE The high power HVV1011-500L device is a high voltage silicon enhancement mode RF transistor designed for L-band pulsed applications operating


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    PDF HVV1011-500L on/18us HVV1011-500L EG-01-PO17X1 500W TRANSISTOR hvvi

    HVV1012-550

    Abstract: 4884 12W 01 TRANSISTOR hvvi
    Text: HVV1012-550 Preliminary Datasheet L-Band High Power Pulsed Transistor 10µs Pulse Width, 1% Duty Cycle For Airborne DME Applications DESCRIPTION PACKAGE The high power HVV1012-550 device is a high voltage silicon enhancement mode RF transistor designed for L-band pulsed


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    PDF HVV1012-550 HVV1012-550 429-HVVi EG-01-PO18X2 4884 12W 01 TRANSISTOR hvvi

    500W TRANSISTOR

    Abstract: HVV1011-500L 500W RF Transistor 1030 MHz
    Text: HVV1011-500L Preliminary Datasheet L-Band High Power Pulsed Transistor 32µs on/18us off x 48, repeated every 24ms For Mode S-ELM Interrogator Applications DESCRIPTION PACKAGE The high power HVV1011-500L device is a high voltage silicon enhancement mode RF transistor


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    PDF HVV1011-500L on/18us HVV1011-500L on/18 HV800 MIL-STD-883, 429-HVVi EG-01-PO17X7 500W TRANSISTOR 500W RF Transistor 1030 MHz

    HVV0912-450

    Abstract: diode gp 429 TACAN
    Text: HVV0912-450 Preliminary Datasheet L-Band High Power Pulsed Transistor 960-1215 MHz, 10µs Pulsewidth, 10% Duty Cycle For Ground DME/TACAN Applications DESCRIPTION PACKAGE The high power HVV0912-450 device is a high voltage silicon enhancement mode RF transistor


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    PDF HVV0912-450 HVV0912-450 429-HVVi EG-01-PO35X1 diode gp 429 TACAN

    500W TRANSISTOR

    Abstract: hvvi HVV1012-550
    Text: HVV1012-550 Preliminary Datasheet L-Band High Power Pulsed Transistor 10µs Pulse Width, 1% Duty Cycle For Airborne DME Applications DESCRIPTION PACKAGE The high power HVV1012-550 device is a high voltage silicon enhancement mode RF transistor designed for L-band pulsed applications operating


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    PDF HVV1012-550 HVV1012-550 EG-01-PO18X1 500W TRANSISTOR hvvi

    transistor SMD 12W MOSFET

    Abstract: transistor SMD 12W transistor JE 1090 smd transistor code 12w
    Text: H GE PACKAGE FEATURES Silicon MOSFET Technology Operation from 24V to 50V High Power Gain Extreme Ruggedness Internal Input and Output Matching Excellent Thermal Stability All Gold Bonding Scheme Pb-free and RoHS Compliant TYPICAL PERFORMANCE High voltage vertical technology is well suited for high power pulsed applications in the


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    PDF HVV1011-600 1030MHz 1090MHz. transistor SMD 12W MOSFET transistor SMD 12W transistor JE 1090 smd transistor code 12w

    HVV1214-250L

    Abstract: hvvi
    Text: HVV1214-250L Product Overview L-Band High Power Pulsed Transistor 2000µs Pulse Width, 10% Duty Cycle For L-band Radar Applications DESCRIPTION PACKAGE The high power HVV1214-250L device is a high voltage silicon enhancement mode RF transistor designed for L-band pulsed applications operating


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    PDF HVV1214-250L HVV1214-250L 1200MHz 1400Mhz EG-01-PO16X1 hvvi

    HVV1011-600

    Abstract: hvvi 1090MHZ
    Text: HVV1011-600 Preliminary Datasheet L-Band High Power Pulsed Transistor 50µs Pulse Width, 2% Duty Cycle For 1030-1090MHz IFF/TPR/TCAS Applications DESCRIPTION PACKAGE The high power HVV1011-600 device is a high voltage silicon enhancement mode RF transistor


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    PDF HVV1011-600 1030-1090MHz HVV1011-600 HV800 MIL-STD-883, EG-01-PO15X4 hvvi 1090MHZ

    Untitled

    Abstract: No abstract text available
    Text: DESCRIPTION PACKAGE The high power HVV0912-450 device is a high voltage silicon enhancement mode RF transistor designed for L-band pulsed avionics applications operating over the frequency range of 960 MHz and 1215 MHz. FEATURES High Power Gain Excellent Ruggedness


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    PDF HVV0912-450 HV800 MIL-STD-883,

    hvv1011

    Abstract: HV400 Radar Transponder HV800 SM200 1030 HVV1011-300 rf power transistors
    Text: Product Selection Guide Avionics RF Power Transistors For IFF, TCAS, Transponder/Interrogator Applications Pulse Width = 50us, Duty Cycle = 2% PART NUMBER HVV1011-035 HVV1011-300 HVV1011-600 FREQUENCY (MHz) 1030-1090 1030-1090 1030-1090 VDD (V) 50 50 50


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    PDF HVV1011-035 HVV1011-300 HVV1011-600 SM200 HV400 HV800 hvv1011 HV400 Radar Transponder HV800 SM200 1030 HVV1011-300 rf power transistors

    J152-ND

    Abstract: No abstract text available
    Text: EVALUATION KIT >LL'&''#,&&#;A RF Power Transistor Part Number: HVV1011-600 Evaluation Kit Part Number: HVV1011-600-EK Note: The Gerber file can be downloaded at www.adsemi.com for most test fixtures or contact us at [email protected] Contents: - PCB Component Placement Diagram


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    PDF HVV1011-600 HVV1011-600-EK 712-1388-1-ND 478-2646-1-ND 399-1222-2-ND 399-1236-2-ND 478-3134-1-ND PCE3484TR-ND HV800 FXT000116 J152-ND

    Untitled

    Abstract: No abstract text available
    Text: DESCRIPTION PACKAGE The high power HVV1011-500L device is a high voltage silicon enhancement mode RF transistor designed for L-band pulsed applications operating at 1030 MHz & 1090 MHz using a 2.4ms pulse burst 32 s on/18 s off x 48 repeated every 24ms.


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    PDF HVV1011-500L on/18 HV800A MIL-STD-883,

    AIRBORNE DME

    Abstract: transistor SMD 12W MOSFET transistor SMD 12W smd transistor code 12w RF Transistor S10-12
    Text: FEATURES ! GE PACKAGE Silicon MOSFET Technology Operation from 24V to 50V High Power Gain Extreme Ruggedness Internal Input and Output Matching Excellent Thermal Stability All Gold Bonding Scheme Pb-free and RoHS Compliant TYPICAL PERFORMANCE Table 1: Typical RF Performance in broadband text fixture at 25°C temperature with


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    PDF HVV1012-550 1025MHz 1150MHz. AIRBORNE DME transistor SMD 12W MOSFET transistor SMD 12W smd transistor code 12w RF Transistor S10-12