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    HUF75337 Price and Stock

    onsemi HUF75337P3

    MOSFET N-CH 55V 75A TO220-3
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    DigiKey HUF75337P3 Tube
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    Rochester Electronics LLC HUF75337P3

    MOSFET N-CH 55V 75A TO220-3
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    DigiKey HUF75337P3 Tube 1,211
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    onsemi HUF75337S3S

    MOSFET N-CH 55V 75A D2PAK
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    DigiKey HUF75337S3S Tube
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    Harris Semiconductor HUF75337S3ST

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    Quest Components HUF75337S3ST 640
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    Bristol Electronics HUF75337S3ST 800 2
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    • 10 $2.1294
    • 100 $1.5289
    • 1000 $1.3432
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    Harris Semiconductor HUF75337P3

    HUF75337 - N-Channel ULTRAFET POWER MOSFET '
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    Rochester Electronics HUF75337P3 2,600 1
    • 1 $0.2383
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    • 100 $0.224
    • 1000 $0.2026
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    Find more HUF75337 price and stock on Findchips.com

    HUF75337 Datasheets (14)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HUF75337G3 Fairchild Semiconductor 75 A, 55 V, 0.014 ohm, N-Channel UltraFET Power MOSFET Original PDF
    HUF75337G3 Intersil 75A, 55V, 0.014 ?, N-Channel UltraFET Power MOSFETs Original PDF
    HUF75337G3 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    HUF75337P3 Fairchild Semiconductor 75A, 55V, 0.014 ?, N-Channel UltraFET Power MOSFETs Original PDF
    HUF75337P3 Fairchild Semiconductor 75 A, 55 V, 0.014 ohm, N-Channel UltraFET Power MOSFET Original PDF
    HUF75337P3 Intersil 75A, 55V, 0.014 ?, N-Channel UltraFET Power MOSFETs Original PDF
    HUF75337P3 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    HUF75337S3 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    HUF75337S3S Fairchild Semiconductor 75A, 55V, 0.014 ?, N-Channel UltraFET Power MOSFETs Original PDF
    HUF75337S3S Fairchild Semiconductor 75 A, 55 V, 0.014 ohm, N-Channel UltraFET Power MOSFET Original PDF
    HUF75337S3S Intersil 75A, 55V, 0.014 ?, N-Channel UltraFET Power MOSFETs Original PDF
    HUF75337S3ST Fairchild Semiconductor 75 A, 55 V, 0.014 ohm, N-Channel UltraFET Power MOSFET Original PDF
    HUF75337S3ST Intersil MOSFET, Enhancement, N Channel, 55V, TO-263, 3-Pin Original PDF
    HUF75337S3S/T Toshiba Power MOSFETs Cross Reference Guide Original PDF

    HUF75337 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    75337P

    Abstract: 75337 HUF75337G3 HUF75337P3 HUF75337S3S HUF75337S3ST TB334 75337S 358e9
    Text: HUF75337G3, HUF75337P3, HUF75337S3S Data Sheet June 1999 75A, 55V, 0.014 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUF75337G3, HUF75337P3, HUF75337S3S 75337P 75337 HUF75337G3 HUF75337P3 HUF75337S3S HUF75337S3ST TB334 75337S 358e9

    75337P

    Abstract: 77e-1 75337 HUF75337 75337S HUF75337P3 HUF75337S3S HUF75337S3ST TB334 HUF75337G3
    Text: HUF75337G3, HUF75337P3, HUF75337S3S Data Sheet December 2001 75A, 55V, 0.014 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUF75337G3, HUF75337P3, HUF75337S3S 75337P 77e-1 75337 HUF75337 75337S HUF75337P3 HUF75337S3S HUF75337S3ST TB334 HUF75337G3

    75337S

    Abstract: HUF75337G3 75337P HUF75337P3 HUF75337S3 HUF75337S3S HUF75337S3ST TB334
    Text: HUF75337G3, HUF75337P3, HUF75337S3, HUF75337S3S S E M I C O N D U C T O R 62A, 55V, 0.014 Ohm, N-Channel UltraFET Power MOSFETs January 1998 Features Description • 62A, 55V • Ultra Low On-Resistance, rDS ON = 0.014Ω • Diode Exhibits Both High Speed and Soft Recovery


    Original     		PDF HUF75337G3, HUF75337P3, HUF75337S3, HUF75337S3S TB334, 1-800-4-HARRIS 75337S HUF75337G3 75337P HUF75337P3 HUF75337S3 HUF75337S3S HUF75337S3ST TB334

    75337

    Abstract: 75337P HUF75337G3 HUF75337P3 HUF75337S3S HUF75337S3ST TB334 64e2
    Text: HUF75337G3, HUF75337P3, HUF75337S3S Data Sheet June 1999 75A, 55V, 0.014 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUF75337G3, HUF75337P3, HUF75337S3S 43ucts 75337 75337P HUF75337G3 HUF75337P3 HUF75337S3S HUF75337S3ST TB334 64e2

    75344g

    Abstract: 75344P HUF75344G3 HUF75344P3 HUF75344S3S HUF75344S3ST TB334
    Text: HUF75344G3, HUF75344P3, HUF75344S3S Data Sheet January 2000 75A, 55V, 0.008 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUF75344G3, HUF75344P3, HUF75344S3S 75344g 75344P HUF75344G3 HUF75344P3 HUF75344S3S HUF75344S3ST TB334

    75344G

    Abstract: 75344p HUF75344G3 HUF75344P3 HUF75344S3S HUF75344S3ST TB334
    Text: HUF75344G3, HUF75344P3, HUF75344S3S Data Sheet December 2001 75A, 55V, 0.008 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUF75344G3, HUF75344P3, HUF75344S3S 75344G 75344p HUF75344G3 HUF75344P3 HUF75344S3S HUF75344S3ST TB334

    fqp60n06

    Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
    Text: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier


    Original     		PDF STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640

    Untitled

    Abstract: No abstract text available
    Text: HUF75344G3, HUF75344P3, HUF75344S3S Data Sheet December 2004 75A, 55V, 0.008 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUF75344G3, HUF75344P3, HUF75344S3S

    BC548 TRANSISTOR REPLACEMENT

    Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
    Text: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction


    Original     		PDF BAP1321-02 BAP65-05 BAP65-03 BAP65-05W BAP65-02 BAP63-03 BAP63-02 BAP64-03 BAP64-02 BB143 BC548 TRANSISTOR REPLACEMENT TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587

    Complementary MOSFETs buz11

    Abstract: irfd120 Power MOSFET Selection Guide HRF3205 MOSFET Selection Guide IRFP440 BUZ71 IRFD120 HRF3205 equivalent IRF610 complementary IRFD110
    Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12


    Original     		PDF 1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 Complementary MOSFETs buz11 irfd120 Power MOSFET Selection Guide HRF3205 MOSFET Selection Guide IRFP440 BUZ71 IRFD120 HRF3205 equivalent IRF610 complementary IRFD110

    IRFZ44N complementary

    Abstract: IRF3205 COMPLEMENTARY IRF3205 application a/surface mount IRFZ44N NBP6060 IRF3205 TO-220 philips 435-2 BUZ110S HRF3205 harris 4365
    Text: 39460.3 - UltraFET Cross LC 1/22/98 10:42 AM Page 1 55V UltraFET MOSFETs Competitive Cross Reference HARRIS RECOMMENDED PART NUMBER PART NUMBER PACKAGE COMPETITOR FILE NUMBER HARRIS RECOMMENDED PART NUMBER PART NUMBER PACKAGE COMPETITOR FILE NUMBER BUK7508-55


    Original     		PDF BUK7508-55 BUK7514-55A BUK7524-55A BUK7530-55A BUK7570-55A BUZ100S BUZ102S BUZ110S BUZ111S IRF1010N IRFZ44N complementary IRF3205 COMPLEMENTARY IRF3205 application a/surface mount IRFZ44N NBP6060 IRF3205 TO-220 philips 435-2 HRF3205 harris 4365

    HUF75307D

    Abstract: No abstract text available
    Text: Harris New Low rDS ON MOSFET Products UltraFETTM is a new low voltage, low rDS(ON) MOSFET design and process technology. The UltraFETTM technology provides Harris with world class power MOSFET product performance in several package styles. The UltraFET TM technology


    Original     		PDF 5V/75A/0 OT-223 O-251AA/252AA O-220AB HUF75345P3 HUF75343P3 HUF75339P3 HUF75337P3 HUF75333P3 O-262AA/263AB HUF75307D

    SKIIP 33 nec 125 t2

    Abstract: skiip 613 gb 123 ct RBS 6302 ericsson SKIIP 513 gb 173 ct THERMISTOR ml TDK 150M pioneer PAL 010a Project Report of smoke alarm using IC 555 doc SKiip 83 EC 125 T1 ericsson RBS 6000 series INSTALLATION MANUAL Ericsson Installation guide for RBS 6302
    Text: Discontinued and Superseded Stock Number History. This document contains Discontinued and Superseded Stock Number History. The information is listed in the following format: Stock Number: The original RS Stock Number of the item. Brief Description: The Invoice Description of the item.


    Original     		PDF 734TL UWEB-MODEM-34 HCS412/WM TLV320AIC10IPFB 100MB NEON250 GA-60XM7E BLK32X40 BLK32X42 SKIIP 33 nec 125 t2 skiip 613 gb 123 ct RBS 6302 ericsson SKIIP 513 gb 173 ct THERMISTOR ml TDK 150M pioneer PAL 010a Project Report of smoke alarm using IC 555 doc SKiip 83 EC 125 T1 ericsson RBS 6000 series INSTALLATION MANUAL Ericsson Installation guide for RBS 6302

    induction cooker fault finding diagrams

    Abstract: enamelled copper wire swg table AC digital voltmeter using 7107 wiring diagram IEC320 C14 Inlet Male Power Socket Fuse Switch db 3202 diac siemens mkl capacitor YY63T varta CR123A HXD BUZZER lt700 transformer
    Text: 03front order p1_3 1/29/02 3:01 PM C3 Page 1 components cables & connectors actives 18 57 semiconductors optoelectronics passives contents 72 81 87 91 capacitors resistors transformers, ferrites & inductors emc, filters & suppression electromechanical 92 120


    Original     		PDF 03front induction cooker fault finding diagrams enamelled copper wire swg table AC digital voltmeter using 7107 wiring diagram IEC320 C14 Inlet Male Power Socket Fuse Switch db 3202 diac siemens mkl capacitor YY63T varta CR123A HXD BUZZER lt700 transformer

    12SnOFC

    Abstract: BQ37 PMC-90 PMC-90 leadframe material MKT-TO220B03 FDP3672 HRF3205 equivalent mosfet number Tamac4 a105 transistor HRF3205 equivalent
    Text: Date Created: 1/9/2004 Date Issued: 2/13/2004 PCN # 20040204 FORECAST CHANGE NOTIFICATION This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence. This is a preliminary notification. A final PCN will


    Original     		PDF HUF75343P3 HUF75542P3 HUF75631P3 HUF75645P3 HUF75939P3 HUF76107P3 HUF76132P3 HUF76143P3 HUF76419P3 HUF76432P3 12SnOFC BQ37 PMC-90 PMC-90 leadframe material MKT-TO220B03 FDP3672 HRF3205 equivalent mosfet number Tamac4 a105 transistor HRF3205 equivalent

    HRF3205 equivalent

    Abstract: HUF75343S3 RFP70N06 100C BUZ11 HUF75344P3 HUF75329D3ST RFD16N05LSM9A
    Text: Date Created: 3/29/2004 Date Issued: 4/6/2004 PCN # 20041001-A DESIGN/PROCESS CHANGE NOTIFICATION - FINAL Reference FCST PCN number 20030402-A. This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence.


    Original     		PDF 0041001-A 0030402-A. RFD14N05 RFD14N05LSM9A RFD16N05 RFD16N05SM RFD3055LE RFD3055SM RFG70N06 RFP45N06 HRF3205 equivalent HUF75343S3 RFP70N06 100C BUZ11 HUF75344P3 HUF75329D3ST RFD16N05LSM9A

    std2n52

    Abstract: stp2na60 buz102 equivalent SSH6N80 rfp60n06 replacement for IRL2203N BUZ91 equivalent RFP60N06LE IRFP460 cross reference buz91a equivalent
    Text: POWER MOSFETS CROSS REFERENCE Industry standard 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 2SK1159 2SK1160 2SK1161 2SK1164 2SK1166 2SK1167 2SK1168 2SK1169 2SK1170 2SK1199 2SK1202 2SK1203 2SK1204 2SK1205 2SK1231 2SK1232


    Original     		PDF 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 std2n52 stp2na60 buz102 equivalent SSH6N80 rfp60n06 replacement for IRL2203N BUZ91 equivalent RFP60N06LE IRFP460 cross reference buz91a equivalent

    FLMP SuperSOT-6

    Abstract: Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FQP65N06 IRFS630 FDG329N FDP2532 fqpf6n80
    Text: 2003 Analog Discrete Interface & Logic Optoelectronics Power MOSFET Selection Guide Across the board. Around the world. Power MOSFET Selection Guide 2003 Table of Contents Product page BGA N-Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1


    Original     		PDF SC70-6 SC75-6 SuperSOTTM-3/SOT-23 Power247TM, FLMP SuperSOT-6 Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FQP65N06 IRFS630 FDG329N FDP2532 fqpf6n80

    FQPF*7N65C APPLICATIONS

    Abstract: bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237
    Text: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM


    Original     		PDF UF4003. UF4004. UF4005. UF4006. UF4007. USB10H. USB1T1102 USB1T11A. vKA75420M W005G FQPF*7N65C APPLICATIONS bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237

    rr180

    Abstract: 75337 75337S 75337P
    Text: in te rrii HUF75337G3, HUF75337P3, HUF75337S3S J u n e 1999 D a ta S h e e t 75A, 55V, 0.014 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    OCR Scan     		PDF HUF75337G3, HUF75337P3, HUF75337S3S HUF75337S3S AN7260. rr180 75337 75337S 75337P

    Untitled

    Abstract: No abstract text available
    Text: HUF75337G3, HUF75337P3, HUF75337S3, HUF75337S3S Semiconductor Data Sheet 62A, 55V, 0.014 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    OCR Scan     		PDF HUF75337G3, HUF75337P3, HUF75337S3, HUF75337S3S O-263AB O-263AB

    huf75337g3

    Abstract: 75337S
    Text: HUF75337G3, HUF75337P3, HUF75337S3, HUF75337S3S HARRIS S E M I C O N D U C T O R 62A, 55V, 0.014 Ohm, N-Channel UltraFET Power MOSFETs January 1998 Features ^ • 62A, 55V M These N-Channel power MOS­ • Ultra Low On-Resistance, ros ON = • Diode Exhibits Both High Speed and Soft Recovery


    OCR Scan     		PDF HUF75337G3, HUF75337P3, HUF75337S3, HUF75337S3S TB334, 1-800-4-HARRIS huf75337g3 75337S

    Untitled

    Abstract: No abstract text available
    Text: HUF75337G3, HUF75337P3, HUF75337S3S Semiconductor Data Sheet June 1999 75A, 55V, 0.014 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    OCR Scan     		PDF HUF75337G3, HUF75337P3, HUF75337S3S HUF75337

    75337P

    Abstract: ta75337
    Text: interrii HUF75337G3, HUF75337P3, HUF75337S3S Data S heet Ju n e 1999 75A, 55V, 0.014 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    OCR Scan     		PDF HUF75337G3, HUF75337P3, HUF75337S3S AN7254 AN7260. 75337P ta75337