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    Untitled

    Abstract: No abstract text available
    Text: N AMER PH ILI PS/ DI SCR ETE 5 SE D E V tLU P M LN I UAI A J> M bbS 3 T 31 00534=13 5 • BYT230PIV200-400 This data sheet contains advance information and specifications are subject to change w ithout notice. /


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    PDF BYT230PIV200-400 hti53c T-03-19

    BUK436-50A

    Abstract: BUK436-50B SOT93 package
    Text: N AMER P H I L I P S / D I S C R E T E HSE D Hi bfci53ci31 0 0 2 0 2 0 5 T Hi PowerMOS transistor BUK436-50A BUK436-50B T -3 « M GENERAL DESCRIPTION N-channel enhancem ent mode field-effect power transistor in a plastic envelope. The device is intended to r use in


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    PDF Q0202BS BUK436-50A BUK436-50B BUK436 OT-93; T-39-T3 SOT93 package