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    HN2D02FU Price and Stock

    onsemi HN2D02FUTW1T1G

    DIODE ARRAY GP 80V 100MA SC88
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    DigiKey HN2D02FUTW1T1G Cut Tape 44,439 1
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    Toshiba America Electronic Components HN2D02FU,LF

    DIODE ARRAY GP 80V 80MA US6
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    DigiKey HN2D02FU,LF Digi-Reel 3,045 1
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    onsemi SHN2D02FUTW1T1G

    DIODE ARRAY GP 80V 100MA SC88
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    onsemi HN2D02FUTW1T1

    DIODE SWITCH 100MA 85V SOT363
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    Toshiba America Electronic Components HN2D02FU,LXGF(T

    Rectifier Diode Switching 85V 0.08A 4ns Automotive AEC-Q101 6-Pin US T/R
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    Verical HN2D02FU,LXGF(T 3,000 194
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    Find more HN2D02FU price and stock on Findchips.com

    HN2D02FU Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HN2D02FU Toshiba Array of Independent Diodes Original PDF
    HN2D02FU Toshiba DIODE Scan PDF
    HN2D02FU,LF Toshiba America Electronic Components INDEPENDENT SWITCHING DIODE 80V Original PDF
    HN2D02FU(TE85L,F) Toshiba Diodes, Rectifiers - Arrays, Discrete Semiconductor Products, DIODE SW 80V 80MA US6 Original PDF
    HN2D02FUTW1T1 On Semiconductor Ultra High Speed Switching Diodes Original PDF
    HN2D02FUTW1T1G On Semiconductor Ultra High Speed Switching Diodes Original PDF

    HN2D02FU Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    HN2D02FUTW1T1

    Abstract: HN2D02FUTW1T1G
    Text: HN2D02FUTW1T1 Ultra High Speed Switching Diodes These Silicon Epitaxial Planar Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC−88 package which is designed for low power surface mount applications.


    Original     		PDF HN2D02FUTW1T1 SC-88 HN2D02FUTW1T1/D HN2D02FUTW1T1 HN2D02FUTW1T1G

    HN2D02FUTW1T1G

    Abstract: No abstract text available
    Text: HN2D02FUTW1T1G Ultra High Speed Switching Diodes These Silicon Epitaxial Planar Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC−88 package which is designed for low power surface mount applications.


    Original     		PDF HN2D02FUTW1T1G SC-88 HN2D02FUTW1T1/D HN2D02FUTW1T1G

    SC88 MARKING A1

    Abstract: No abstract text available
    Text: HN2D02FUTW1T1G, HN2D02FUTW1T1G Ultra High Speed Switching Diodes These Silicon Epitaxial Planar Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC−88 package which is designed for low power surface mount


    Original     		PDF HN2D02FUTW1T1G, SHN2D02FUTW1T1G SC-88 AEC-Q101 HN2D02FUTW1T1/D SC88 MARKING A1

    419B-02

    Abstract: 419b HN2D02FUTW1T1
    Text: HN2D02FUTW1T1 Ultra High Speed Switching Diodes These Silicon Epitaxial Planar Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC−88 package which is designed for low power surface mount applications.


    Original     		PDF HN2D02FUTW1T1 SC-88 HN2D02FUTW1T1 inch/3000 SC-88 HN2D02FUTW1T1/D 419B-02 419b

    HN2D02FU

    Abstract: No abstract text available
    Text: HN2D02FU TOSHIBA Diode Silicon Epitaxial Planar Type HN2D02FU Ultra High Speed Switching Application Unit: mm HN2D02FU is composed of 3 independent diodes. Low forward voltage : VF 3 = 0.98V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance


    Original     		PDF HN2D02FU HN2D02FU 10transportation

    MARKING CODE R7 DIODE

    Abstract: marking R7 diode
    Text: HN2D02FUTW1T1 Ultra High Speed Switching Diodes These Silicon Epitaxial Planar Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC−88 package which is designed for low power surface mount applications.


    Original     		PDF HN2D02FUTW1T1 SC-88 inch/3000 HN2D02FUTW1T1 MARKING CODE R7 DIODE marking R7 diode

    HN2D02FU

    Abstract: No abstract text available
    Text: HN2D02FU TOSHIBA Diode Silicon Epitaxial Planar Type HN2D02FU Ultra High Speed Switching Application Unit: mm z HN2D02FU is composed of 3 independent diodes. z Low forward voltage : VF 3 = 0.98V (typ.) z Fast reverse recovery time : trr = 1.6 ns (typ.) z Small total capacitance


    Original     		PDF HN2D02FU HN2D02FU

    HN2D02FU

    Abstract: No abstract text available
    Text: HN2D02FU 東芝ダイオード シリコンエピタキシャルプレーナ形ダイオード HN2D02FU ○ 超高速スイッチング用 z z z z 単位: mm ウルトラスーパーミニ 6 端子 パッケージに 3 素子を内蔵しています。 順方向特性が良い。


    Original     		PDF HN2D02FU HN2D02FU

    sot 363 marking code CD

    Abstract: No abstract text available
    Text: HN2D02FUTW1T1 Ultra High Speed Switching Diodes These Silicon Epitaxial Planar Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC-88 package which is designed for low power surface mount applications.


    Original     		PDF HN2D02FUTW1T1 SC-88 inch/3000 HN2D02FUTW1T1/D sot 363 marking code CD

    HN2D02FU

    Abstract: No abstract text available
    Text: HN2D02FU TOSHIBA Diode Silicon Epitaxial Planar Type HN2D02FU Ultra High Speed Switching Application Unit: mm l HN2D02FU is composed of 3 independent diodes. l Low forward voltage : VF 3 = 0.98V (typ.) l Fast reverse recovery time : trr = 1.6ns (typ.) l Small total capacitance


    Original     		PDF HN2D02FU HN2D02FU

    BAS16XV2T1

    Abstract: iss400 ISS400T1 NSDEMN11XV6T1
    Text: Switching Diodes General−Purpose Signal and Switching Diodes BAS16HT1 BAS20HT1 BAS21HT1 MMDL914T1 MMDL6050T1 BAS16TT1 DA121TT1 DAP222 BAW56TT1 DAN222 BAV70TT1 75 200 250 100 70 75 80 80 70 80 70 1.0 0.1 0.1 5.0 0.1 1.0 1.0 0.1 2.5 0.1 5.0 HN2D02FUTW1T1 85


    Original     		PDF BAS16HT1 BAS20HT1 BAS21HT1 MMDL914T1 MMDL6050T1 BAS16TT1 DA121TT1 DAP222 BAW56TT1 DAN222 BAS16XV2T1 iss400 ISS400T1 NSDEMN11XV6T1

    Untitled

    Abstract: No abstract text available
    Text: HN2D02FU TOSHIBA Diode Silicon Epitaxial Planar Type HN2D02FU Ultra High Speed Switching Application Unit: mm z HN2D02FU is composed of 3 independent diodes. z Low forward voltage : VF 3 = 0.98V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.) z Small total capacitance


    Original     		PDF HN2D02FU HN2D02FU

    HN2D02FU

    Abstract: No abstract text available
    Text: HN2D02FU TOSHIBA Diode Silicon Epitaxial Planar Type HN2D02FU Ultra High Speed Switching Application Unit in mm HN2D02FU is composed of 3 independent diodes. Low forward voltage : VF 3 = 0.98V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance


    Original     		PDF HN2D02FU HN2D02FU 961001EAA2'

    SCJ0004N

    Abstract: JDV2S71E DF2S6.8UFS 015AZ3.3 1ss421 CMG07 CMZ24 CRS06 DF2S5.6SC DF3S6.8ECT
    Text: 東芝半導体製品総覧表 2009 年 7 月版 ダイオード 整流ダイオード 可変容量ダイオード 高周波スイッチ用ダイオード ツエナーダイオード スイッチングダイオード ショットキーバリアダイオード


    Original     		PDF SCJ0004N TPC6K01 HMG01 CRG02 CRG07 CRG03 CMG05 CMG07 CMG02 CRG01 SCJ0004N JDV2S71E DF2S6.8UFS 015AZ3.3 1ss421 CMG07 CMZ24 CRS06 DF2S5.6SC DF3S6.8ECT

    Variable Capacitance Diodes

    Abstract: 1SV283B 2fu smd transistor bidirectional zener diode 015DZ4 015AZ15 CRS06 smd diode Lz zener general purpose zener diode 256 CMZ24
    Text: Diodes Rectifiers z 252 Variable Capacitance Diodes z 254 Radio-Frequency Switching Diodes z 255 Zener Diodes z 256 Switching Diodes z 262 Schottky Barrier Diodes z 265 Photodiodes z 270 251 Rectifiers General-Purpose Rectifiers Average Forward Current A


    Original     		PDF TPC6K01 HMG01 CRG02 CRG07 CRG03 CMG05 CMG02 CRG01 CRG04 CMG06 Variable Capacitance Diodes 1SV283B 2fu smd transistor bidirectional zener diode 015DZ4 015AZ15 CRS06 smd diode Lz zener general purpose zener diode 256 CMZ24

    SSM3J307T

    Abstract: SSM3J328R SSM3J334R
    Text: 2011-5 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices Transistors, MOSFETs, ESD-Protection Diodes, Schottky Barrier Diodes, L-MOS 1- to 3-Gate Logic ICs , LDOs, Operational Amplifiers, Digital-Output Magnetic Sensors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g


    Original     		PDF 200-mA BCE0030D SSM3J307T SSM3J328R SSM3J334R

    Untitled

    Abstract: No abstract text available
    Text: FEATURES Compensates cables up to 300 meters for wideband video 60 MHz equalized BW at 300 meters of UTP cable 120 MHz equalized BW at 150 meters of UTP cable Fast time domain performance 70 ns settling time to 1% at 300 meters of UTP cable 7 ns rise/fall times with 2 V step at 300 meters of UTP cable


    Original     		PDF AD8122 AD8122 CP-40-12) AD8122ACPZ AD8122ACPZ-R7 AD8122-EVALZ 40-Lead 5-06-2011-A

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA HN2D02FU TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE HN2D02FU ULTRA HIGH SPEED SWITCHING APPLICATION. Unit in mm • HN2D02FU is composed of 3 independent diodes. • Low Forward Voltage • Fast Reverse Recovery Time : tr r = 1.6ns Typ. • Small Total Capacitance


    OCR Scan     		PDF HN2D02FU HN2D02FU 961001EAA2'

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA HN2D02FU TOSHIBA DIODE H • ■ N m 'm SILICON EPITAXIAL PLANAR TYPE 7 n mmr f l 7 F 1 1 ULTRA HIGH SPEED SWITCHING APPLICATION. Unit in mm HN2D02PU is composed of 3 independent diodes. TT A m T /m _ \ Low Forward Voltage : vj?’ 3 = U.30V Viyp.;


    OCR Scan     		PDF HN2D02FU HN2D02PU 961001EAA2'

    HN2D02FU

    Abstract: No abstract text available
    Text: TO SHIBA HN2D02FU TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE HN2D02FU ULTRA HIGH SPEED SWITCHING APPLICATION. Unit in mm • • • • HN2D02FU is composed of 3 independent diodes. Low Forward Voltage : Vjr 3 = 0.98V (Typ.) Fast Reverse Recovery Time : trr= 1.6ns (Typ.)


    OCR Scan     		PDF HN2D02FU HN2D02FU 961001EAA2'

    diode Z47

    Abstract: z43 diode Z5.6 Z3.3 S360 DIODE 02CZ5 diode Z27 S368 diode zener z6 1s diode
    Text: Diodes Signal Diode for General Purpose R atino V r V lo im A ) Switching Diode Schottky Barrier Diode Zener Diode use S-M IN I (SOT-23MOD) BO 80 — — _ — HN2D01FU _ 80 80 _ — — — HN2D02FU BO 80 80 — ssc SS M use 1SS362 1S S368 USM — 1S S 352


    OCR Scan     		PDF HN2D01FU HN2D02FU OT-23MOD) 02CZ5 diode Z47 z43 diode Z5.6 Z3.3 S360 DIODE diode Z27 S368 diode zener z6 1s diode

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA HN2D02FU TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE HN2D02FU ULTRA HIGH SPEED SWITCHING APPLICATION. Unit in mm • HN2D02FU is composed of 3 independent diodes. • Low Forward Voltage • Fast Reverse Recovery Time : tr r = 1.6ns Typ. • Small Total Capacitance


    OCR Scan     		PDF HN2D02FU HN2D02FU 961001EAA2'

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA HN2D02FU TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE HN2D02FU ULTRA HIGH SPEED SWITCHING APPLICATION. • • • • Unit in mm HN2D02FU is composed of 3 independent diodes. Low Forward Voltage : Vjr 3 = 0.98V (Typ.) Fast Reverse Recovery Time : trr= 1.6ns (Typ.)


    OCR Scan     		PDF HN2D02FU the75 961001EAA2'

    4558 dd

    Abstract: 5W393 4558 equivalent TA75558 LM358 TA75S393 TA75393 LM393 4558 4558 8 PIN
    Text: F5/F6 Type No. 1 1 öS Max. Rating V r V SMV/SM6 USV/US8 Structure P(mW)* IO(mA) SMV/SM6 USVAJS6 Connection Mark 1SS308 80 100 300 200 1SS181 X 2 A1 1SS309 80 100 300 200 1SS184 X 2 A2 HN1D01F HN1D01FU 80 100 300 200 1SS181 X 2 HN1D02F HN1D02FU 80 100 300


    OCR Scan     		PDF 1SS308 1SS181 1SS309 1SS184 HN1D01F HN1D01FU HN1D02F HN1D02FU 1SS184X2 4558 dd 5W393 4558 equivalent TA75558 LM358 TA75S393 TA75393 LM393 4558 4558 8 PIN