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    HN1D02FU Price and Stock

    Toshiba America Electronic Components HN1D02FU,LF

    DIODE ARRAY GP 80V 100MA US6
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    DigiKey HN1D02FU,LF Digi-Reel 8,670 1
    • 1 $0.36
    • 10 $0.221
    • 100 $0.36
    • 1000 $0.09148
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    HN1D02FU,LF Cut Tape 8,670 1
    • 1 $0.36
    • 10 $0.221
    • 100 $0.36
    • 1000 $0.09148
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    HN1D02FU,LF Reel 6,000 3,000
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    Avnet Americas HN1D02FU,LF Reel 20 Weeks 3,000
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    • 10000 $0.0596
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    Mouser Electronics HN1D02FU,LF 3,394
    • 1 $0.3
    • 10 $0.195
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    • 1000 $0.081
    • 10000 $0.054
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    Quest Components HN1D02FU,LF 2,400
    • 1 $0.36
    • 10 $0.36
    • 100 $0.108
    • 1000 $0.072
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    Toshiba America Electronic Components HN1D02FU(T5L,F,T)

    DIODE ARRAY GP 80V 100MA ES6
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    DigiKey HN1D02FU(T5L,F,T) Cut Tape 8 1
    • 1 $0.39
    • 10 $0.39
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    HN1D02FU(T5L,F,T) Reel
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    HN1D02FU(T5L,F,T) Digi-Reel 1
    • 1 $0.39
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    Toshiba America Electronic Components HN1D02FU,LF(B

    HN1D02FU,LF(B
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical HN1D02FU,LF(B 2,850 676
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    • 1000 $0.1082
    • 10000 $0.105
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    Quest Components HN1D02FU,LF(B 2,280
    • 1 $0.58
    • 10 $0.58
    • 100 $0.261
    • 1000 $0.174
    • 10000 $0.174
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    Toshiba Corporation HN1D02FU,LF

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics HN1D02FU,LF 3,000 19
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    • 100 $0.135
    • 1000 $0.081
    • 10000 $0.054
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    Toshiba America Electronic Components HN1D02FU(TE85L,F)

    (Alt: HN1D02FU(TE85L,F))
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    EBV Elektronik HN1D02FU(TE85L,F) 13 Weeks 3,000
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    HN1D02FU Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HN1D02FU Toshiba Common Cathode Diode Array Original PDF
    HN1D02FU Toshiba Japanese - Diodes Original PDF
    HN1D02FU Unknown Silicon Diode Scan PDF
    HN1D02FU Unknown The Diode Data Book with Package Outlines 1993 Scan PDF
    HN1D02FU Toshiba DIODE Scan PDF
    HN1D02FU,LF Toshiba Semiconductor and Storage Discrete Semiconductor Products - Diodes - Rectifiers - Arrays - DIODE ARRAY GP 80V 100MA US6 Original PDF
    HN1D02FU(T5L,F,T) Toshiba Diodes, Rectifiers - Arrays, Discrete Semiconductor Products, SWITCHING DIODE 80V CC 6 US6 Original PDF

    HN1D02FU Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: HN1D02FU TOSHIBA Diode Silicon Epitaxial Planar Type HN1D02FU Ultra High Speed Switching Application Unit: mm z HN1D02FU is composed of 2 unit of cathode common. z Low forward voltage : VF 3 = 0.90V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.)


    Original     		PDF HN1D02FU HN1D02FU

    HN1D02FU

    Abstract: No abstract text available
    Text: HN1D02FU TOSHIBA Diode Silicon Epitaxial Planar Type HN1D02FU Ultra High Speed Switching Application Unit in mm z HN1D02FU is composed of 2 unit of cathode common. z Low forward voltage : VF 3 = 0.90V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.)


    Original     		PDF HN1D02FU HN1D02FU

    HN1D02FE

    Abstract: HN1D02FU
    Text: HN1D02FE TOSHIBA Diode Silicon Epitaxial Planar Type HN1D02FE Ultra High Speed Switching Application Unit in mm z The HN1D02FU is composed of 2 common cathode units. z Low forward voltage : VF 3 = 0.90V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.)


    Original     		PDF HN1D02FE HN1D02FU HN1D02FE

    HN1D02FE

    Abstract: HN1D02FU
    Text: HN1D02FE TOSHIBA Diode Silicon Epitaxial Planar Type HN1D02FE Ultra High Speed Switching Application Unit in mm z The HN1D02FU is composed of 2 common cathode units. z Low forward voltage : VF 3 = 0.90V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.)


    Original     		PDF HN1D02FE HN1D02FU HN1D02FE

    Untitled

    Abstract: No abstract text available
    Text: HN1D01FE TOSHIBA Diode Silicon Epitaxial Planar Type HN1D01FE Ultra High Speed Switching Application Unit in mm HN1D02FU is composed of 2 unit of cathode common. Low forward voltage : VF 3 = 0.92V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance


    Original     		PDF HN1D01FE HN1D02FU

    Untitled

    Abstract: No abstract text available
    Text: HN1D02FE TOSHIBA Diode Silicon Epitaxial Planar Type HN1D02FE Ultra High Speed Switching Application Unit: mm z The HN1D02FU is composed of 2 common cathode units. z Low forward voltage : VF 3 = 0.90V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.)


    Original     		PDF HN1D02FE HN1D02FU

    Untitled

    Abstract: No abstract text available
    Text: HN1D01FE TOSHIBA Diode Silicon Epitaxial Planar Type HN1D01FE Ultra High Speed Switching Application Unit in mm z HN1D02FU is composed of 2 unit of cathode common. z Low forward voltage : VF 3 = 0.92V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.)


    Original     		PDF HN1D01FE HN1D02FU

    HN1D02FE

    Abstract: HN1D02FU
    Text: HN1D02FE TOSHIBA Diode Silicon Epitaxial Planar Type HN1D02FE Ultra High Speed Switching Application Unit in mm The HN1D02FU is composed of 2 common cathode units. Low forward voltage : VF 3 = 0.90V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.)


    Original     		PDF HN1D02FE HN1D02FU HN1D02FE

    HN1D01FE

    Abstract: HN1D02FU
    Text: HN1D01FE TOSHIBA Diode Silicon Epitaxial Planar Type HN1D01FE Ultra High Speed Switching Application Unit in mm HN1D02FU is composed of 2 unit of cathode common. Low forward voltage : VF 3 = 0.92V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance


    Original     		PDF HN1D01FE HN1D02FU HN1D01FE

    Untitled

    Abstract: No abstract text available
    Text: HN1D02FU TOSHIBA Diode Silicon Epitaxial Planar Type HN1D02FU Ultra High Speed Switching Application Unit in mm HN1D02FU is composed of 2 unit of cathode common. Low forward voltage : VF 3 = 0.90V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance


    Original     		PDF HN1D02FU HN1D02FU

    HN1D01FE

    Abstract: HN1D02FU
    Text: HN1D01FE TOSHIBA Diode Silicon Epitaxial Planar Type HN1D01FE Ultra High Speed Switching Application Unit in mm z HN1D02FU is composed of 2 unit of cathode common. z Low forward voltage : VF 3 = 0.92V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.)


    Original     		PDF HN1D01FE HN1D02FU HN1D01FE

    Untitled

    Abstract: No abstract text available
    Text: HN1D02FE TOSHIBA Diode Silicon Epitaxial Planar Type HN1D02FE Ultra High Speed Switching Application Unit in mm HN1D02FU is composed of 2 unit of cathode common. Low forward voltage : VF 3 = 0.90V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance


    Original     		PDF HN1D02FE HN1D02FU

    HN1D01FE

    Abstract: HN1D02FU
    Text: HN1D01FE TOSHIBA Diode Silicon Epitaxial Planar Type HN1D01FE Ultra High Speed Switching Application Unit in mm z HN1D02FU is composed of 2 unit of cathode common. z Low forward voltage : VF 3 = 0.92V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.)


    Original     		PDF HN1D01FE HN1D02FU HN1D01FE

    HN1D02FU

    Abstract: 12T1B
    Text: HN1D02FU 東芝ダイオード シリコンエピタキシャルプレーナ形ダイオード HN1D02FU ○ 超高速スイッチング用 単位: mm z ウルトラスーパーミニ 6 端子 パッケージにカソードコモンを 2 ユニッ トを内蔵しています。


    Original     		PDF HN1D02FU 100mA HN1D02FU 12T1B

    HN1D02FU

    Abstract: No abstract text available
    Text: HN1D02FU TOSHIBA Diode Silicon Epitaxial Planar Type HN1D02FU Ultra High Speed Switching Application Unit in mm l HN1D02FU is composed of 2 unit of cathode common. l Low forward voltage : VF 3 = 0.90V (typ.) l Fast reverse recovery time : trr = 1.6ns (typ.)


    Original     		PDF HN1D02FU HN1D02FU

    SCJ0004N

    Abstract: JDV2S71E DF2S6.8UFS 015AZ3.3 1ss421 CMG07 CMZ24 CRS06 DF2S5.6SC DF3S6.8ECT
    Text: 東芝半導体製品総覧表 2009 年 7 月版 ダイオード 整流ダイオード 可変容量ダイオード 高周波スイッチ用ダイオード ツエナーダイオード スイッチングダイオード ショットキーバリアダイオード


    Original     		PDF SCJ0004N TPC6K01 HMG01 CRG02 CRG07 CRG03 CMG05 CMG07 CMG02 CRG01 SCJ0004N JDV2S71E DF2S6.8UFS 015AZ3.3 1ss421 CMG07 CMZ24 CRS06 DF2S5.6SC DF3S6.8ECT

    Untitled

    Abstract: No abstract text available
    Text: SILICON EPITAXIAL PLANAR TYPE HN1D02FU ULTRA HIGH SPEED SWITCHING APPLICATION. • • • • Unit in mm HN1D02FU is composed of2 unit of cathode common. Low Forward Voltage : Vp 3 = 0.90V (Typ.) Fast Reverse Recovery Time : trr = 1.6ns (Typ.) Small Total Capacitance


    OCR Scan     		PDF HN1D02FU HN1D02FU HN1D02FU-

    4558 dd

    Abstract: 5W393 4558 equivalent TA75558 LM358 TA75S393 TA75393 LM393 4558 4558 8 PIN
    Text: F5/F6 Type No. 1 1 öS Max. Rating V r V SMV/SM6 USV/US8 Structure P(mW)* IO(mA) SMV/SM6 USVAJS6 Connection Mark 1SS308 80 100 300 200 1SS181 X 2 A1 1SS309 80 100 300 200 1SS184 X 2 A2 HN1D01F HN1D01FU 80 100 300 200 1SS181 X 2 HN1D02F HN1D02FU 80 100 300


    OCR Scan     		PDF 1SS308 1SS181 1SS309 1SS184 HN1D01F HN1D01FU HN1D02F HN1D02FU 1SS184X2 4558 dd 5W393 4558 equivalent TA75558 LM358 TA75S393 TA75393 LM393 4558 4558 8 PIN

    Untitled

    Abstract: No abstract text available
    Text: HN1D02FU TOSHIBA TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE H N 1 D02FU ULTRA HIGH SPEED SWITCHING APPLICATION. • • • • HN1D02FU is composed of 2 Low Forward Voltage Fast Reverse Recovery Time Small Total Capacitance Unit in mm unit of cathode common.


    OCR Scan     		PDF HN1D02FU D02FU HN1D02FU 961001EAA2'

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA HN1D02FU TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE h n i n m m m 'm m mmr n 7 F 11 ULTRA HIGH SPEED SWITCHING APPLICATION. • HN1D02FU is composed of 2 un it of cathode common. • Low Forward Voltage • Fast Reverse Recovery Time : t r r = 1.6ns Typ.


    OCR Scan     		PDF HN1D02FU HN1D02FU

    HN1D02FU

    Abstract: No abstract text available
    Text: TOSHIBA HN1D02FU TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE H N 1 D02FU ULTRA HIGH SPEED SWITCHING APPLICATION. • HN1D02FU is composed of 2 unit of cathode common. • Low Forward Voltage • Fast Reverse Recovery Time : trr= 1.6ns Typ. • Small Total Capacitance


    OCR Scan     		PDF HN1D02FU N1D02FU HN1D02FU 961001EAA2'

    Untitled

    Abstract: No abstract text available
    Text: HN1D02FU TOSHIBA TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE H N 1 D02FU ULTRA HIGH SPEED SWITCHING APPLICATION. • • • • HN1D02FU is composed of 2 Low Forward Voltage Fast Reverse Recovery Time Small Total Capacitance Unit in mm unit of cathode common.


    OCR Scan     		PDF HN1D02FU D02FU HN1D02FU 961001EAA2'

    HN1D02FU

    Abstract: No abstract text available
    Text: TOSHIBA HN1D02FU TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE H N 1 D02FU ULTRA HIGH SPEED SWITCHING APPLICATION. • • • • Unit in mm HN1D02FU is composed of 2 unit of cathode common. Low Forward Voltage : Vjr 3 = 0.90V (Typ.) Fast Reverse Recovery Time : trr= 1.6ns (Typ.)


    OCR Scan     		PDF HN1D02FU N1D02FU HN1D02FU 961001EAA2'

    2N3904 331 transistor

    Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
    Text: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272


    OCR Scan     		PDF 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4401 2N4402 2N3904 331 transistor C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737