marking Fn
Abstract: No abstract text available
Text: MCH6614 N- Channel and P-Channel Silicon MOSFET Very High-Speed Switching Applications Features TENTATIVE •Composite type with a low on-resistance, very high-speed switching, N-channel and P-channel MOSFET facilitating high-density mounting. •Low On-state resistance.
|
Original
|
MCH6614
900mm2
000121TM2fXHD
100mA
000120TM2fXHD
marking Fn
|
PDF
|
MOSFET IGSS 100uA
Abstract: No abstract text available
Text: MCH6615 N- Channel and P-Channel Silicon MOSFET Very High-Speed Switching Applications Features TENTATIVE •Composite type with a low on-resistance, very high-speed switching, N-channel and P-channel MOSFET facilitating high-density mounting. •Low On-state resistance.
|
Original
|
MCH6615
900mm2
000121TM2fXHD
150mA
100mA
000120TM2fXHD
MOSFET IGSS 100uA
|
PDF
|
IT0251
Abstract: MCH6615
Text: Ordering number : ENN6796 MCH6615 N-Channel and P-Channel Silicon MOSFETs MCH6615 Ultrahigh-Speed Switching Applications • • The MCH6615 incorporates two elements in the same package which are N-channel and P-channel low ON resistance and high-speed switching MOSFETs,
|
Original
|
ENN6796
MCH6615
MCH6615
MCH6615]
IT0251
|
PDF
|
2SJ172
Abstract: 2SK970 4AM16
Text: 4AM16 Silicon N Channel/P Channel Power MOS FET Array Application SP–12 High speed power switching Features 1 • Low on–resistance N Channel : RDS on ≤ 0.17Ω, VGS = 10V , ID = 4A P Channel : RDS(on) ≤ 0.2Ω, VGS = -10V , ID = -4A • High speed switching
|
Original
|
4AM16
2SJ172
2SK970
4AM16
|
PDF
|
W351
Abstract: FW351
Text: Ordering number : ENN7298 FW351 N-Channel and P-Channel Silicon MOSFETs FW351 Ultrahigh-Speed Switching Applications Preliminary • N-channel and P-channel MOSFETs featuring low ON-resistance, high-speed switching, and 4V voltage operation are encapsulated in one package to enable
|
Original
|
ENN7298
FW351
FW351]
W351
FW351
|
PDF
|
2SJ172
Abstract: 2SK970 4AM16
Text: 4AM16 Silicon N Channel/P Channel Power MOS FET Array Application SP–12 High speed power switching Features 1 • Low on–resistance N Channel : RDS on ≤ 0.17Ω, VGS = 10V , ID = 4A P Channel : RDS(on) ≤ 0.2Ω, VGS = -10V , ID = -4A • High speed switching
|
Original
|
4AM16
2SJ172
2SK970
4AM16
|
PDF
|
4AM16
Abstract: SP-12 Hitachi DSA0046
Text: 4AM16 Silicon N-Channel/P-Channel Power MOS FET Array Application High speed power switching Features • Low on-resistance N Channel: RDS on ≤ 0.17 , VGS = 10 V, I D = 4 A P Channel: RDS(on) ≤ 0.2 , VGS = –10 V, I D = –4 A • High speed switching
|
Original
|
4AM16
SP-12
4AM16
SP-12
Hitachi DSA0046
|
PDF
|
MCH6614
Abstract: No abstract text available
Text: Ordering number : ENN6795 MCH6614 N-Channel and P-Channel Silicon MOSFET MCH6614 Ultrahigh-Speed Switching Applications • The MCH6614 incorporates two elements that are an unit : mm N-channel and a P-channel MOSFETs that feature low 2173 ON resistance and high-speed switching, thereby
|
Original
|
ENN6795
MCH6614
MCH6614
MCH6614]
|
PDF
|
SP12TA
Abstract: Hitachi DSA002727
Text: 4AM15 Silicon N-Channel/P-Channel Power MOS FET Array Application High speed power switching Features • Low on-resistance N Channel: RDS on 0.5 , VGS = 10 V, I D = 2 A P Channel: RDS(on) 0.9 , VGS = –10 V, I D = –2 A • Low drive current • High speed switching
|
Original
|
4AM15
SP-12TA
SP12TA
Hitachi DSA002727
|
PDF
|
Hitachi 2SJ
Abstract: Hitachi DSA002751
Text: 4AM16 Silicon N-Channel/P-Channel Power MOS FET Array November 1996 Application High speed power switching Features • Low on-resistance N Channel: RDS on ≤ 0.17 Ω, VGS = 10 V, ID = 4 A P Channel: RDS(on) ≤ 0.2 Ω, VGS = –10 V, ID = –4 A • High speed switching
|
Original
|
4AM16
SP-12
D-85622
Hitachi 2SJ
Hitachi DSA002751
|
PDF
|
4AM16
Abstract: No abstract text available
Text: 4AM16 Silicon N-Channel/P-Channel Power MOS FET Array Application High speed power switching Features • Low on-resistance N Channel: RDS on ≤ 0.17 Ω, VGS = 10 V, I D = 4 A P Channel: RDS(on) ≤ 0.2 Ω, VGS = –10 V, I D = –4 A • High speed switching
|
Original
|
4AM16
4AM16
|
PDF
|
69-206
Abstract: MCH6613
Text: Ordering number : ENN6920 MCH6613 N-Channel and P-Channel Silicon MOSFETs MCH6613 Ultrahigh-Speed Switching Applications unit : mm 2173A [MCH6613] 0.3 4 0.25 2.1 • The MCH6613 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ONresistance and high-speed switching, thereby enabling
|
Original
|
ENN6920
MCH6613
MCH6613]
MCH6613
69-206
|
PDF
|
MCH6631
Abstract: No abstract text available
Text: Ordering number : ENN7444 MCH6631 N-Channel and P-Channel Silicon MOSFETs MCH6631 Ultrahigh-Speed Switching Applications unit : mm 2173A [MCH6631] 0.3 4 0.25 2.1 • The MCH6631 incorporates a N-channel MOSFET and a P-channel MOSFET that feature low ONresistance and high-speed switching, thereby enabling
|
Original
|
ENN7444
MCH6631
MCH6631]
MCH6631
|
PDF
|
6AM14
Abstract: Hitachi DSA00310
Text: 6AM14 Silicon N-Channel/P-Channel Power MOS FET Array Application High speed power switching Features • • • • Low on-resistance Low drive current High speed switching High density mounting Outline 6AM14 Absolute Maximum Ratings Ta = 25°C Ratings
|
Original
|
6AM14
6AM14
Hitachi DSA00310
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: Ordering number:EN4884 FX601 P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications Features Package Dimensions • Composite type composed of tow low ON-resistance P-channel MOSFET chips for ultrahigh-speed switching and low-voltage drive. · Facilitates high-density mounting.
|
Original
|
EN4884
FX601
FX601
2SJ316,
FX601]
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Ordering number:EN4888 FX605 P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications Features Package Dimensions • Composite type composed of two low ON-resistance P-channel MOSFET chips for ultrahigh-speed switching and low-voltage drive. · Facilitates high-density mounting.
|
Original
|
EN4888
FX605
FX605
2SJ190,
FX605]
|
PDF
|
4886
Abstract: No abstract text available
Text: Ordering number:EN4886 FX603 P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications Features Package Dimensions • Composite type composed of two low ON-resistance P-channel MOSFET chips for ultrahigh-speed switching and low-voltage drive. · Facilitates high-density mounting.
|
Original
|
EN4886
FX603
FX603
2SJ187,
FX603]
4886
|
PDF
|
marking 601
Abstract: FX601
Text: Ordering number:EN4884 FX601 P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications Features Package Dimensions • Composite type composed of tow low ON-resistance P-channel MOSFET chips for ultrahigh-speed switching and low-voltage drive. · Facilitates high-density mounting.
|
Original
|
EN4884
FX601
FX601
2SJ316,
FX601]
marking 601
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Ordering number:EN4886 FX603 P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications Features Package Dimensions • Composite type composed of two low ON-resistance P-channel MOSFET chips for ultrahigh-speed switching and low-voltage drive. · Facilitates high-density mounting.
|
Original
|
EN4886
FX603
FX603
2SJ187,
FX603]
|
PDF
|
fx605 equivalent
Abstract: No abstract text available
Text: Ordering number:EN4888 FX605 P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications Features Package Dimensions • Composite type composed of two low ON-resistance P-channel MOSFET chips for ultrahigh-speed switching and low-voltage drive. · Facilitates high-density mounting.
|
Original
|
EN4888
FX605
FX605
2SJ190,
FX605]
fx605 equivalent
|
PDF
|
FW103
Abstract: ati electric catalog EN5305A
Text: Ordering number : EN5305A P-Channel Silicon MOSFET FW103 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance unit: mm • Ultrahigh-speed switching. 2129-SOP8 • Composite type with two 4V-drive P-channel MOSFETs facilitating high-density mounting.
|
Original
|
EN5305A
FW103
2129-SOP8
FW103]
FW103
ati electric catalog
EN5305A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 4AM16 Silicon N-Channel/P-Channel Power MOS FET Array HITACHI Application High speed power switching Features • L ow on-resistance N Channel: RDS on>< 0.17 i i , V GS = 10 V, ID = 4 A P Channel: RDS(on < 0.2 Q , V GS = - 10 V, ID = - 4 A • High speed switching
|
OCR Scan
|
4AM16
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 4AM16 Silicon N-Channel/P-Channel Power MOS FET Array HITACHI November 1996 Application High speed power switching Features • Low on-resistance N Channel: RDS o1i < 0.17 ¿1, VGS = 10 V, ID= 4 A P Channel: RDS(o1i) < 0.2 Q, V GS= -10 V, ID= -A A • High speed switching
|
OCR Scan
|
4AM16
SP-12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Ordering number : ENN6796 N-Channel and P-Channel Silicon MOSFETs MCH6615 ISMÊYOi Ultrahigh-Speed Switching Applications Features Package Dimensions • The M CH 6615 incorporates two elements in the same package which are N-channel and P-channel low ON resistance and high-speed switching M O SFE T s,
|
OCR Scan
|
ENN6796
MCH6615
MCH6615]
|
PDF
|
