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    HIGH GAIN LOW CAPACITANCE NPN TRANSISTOR Search Results

    HIGH GAIN LOW CAPACITANCE NPN TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1ZMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC MOSFET、Low-side: SiC SBD Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation

    HIGH GAIN LOW CAPACITANCE NPN TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor marking T83 ghz

    Abstract: 2SC4957-T1 2SC4957
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC4957 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN MINIMOLD FEATURES • Low Noise, High Gain • Low Voltage Operation • Low Reverse Transfer Capacitance Cre = 0.3 pF TYP. • 4-pin minimold Package


    Original     		PDF 2SC4957 2SC4957-T1 transistor marking T83 ghz 2SC4957-T1 2SC4957

    NEC 2581

    Abstract: nec 2405 2581 NEC zo 103 ma 75 607 30460 pulse 01940 9590 IC 2030 PIN CONNECTIONS 5598 transistor 2SC4954-T1
    Text: DATA SHEET SILICON TRANSISTOR 2SC4954 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES PACKAGE DIMENSIONS • Low Noise, High Gain in millimeters • Low Voltage Operation • Low Feedback Capacitance +0.1 0.4 –0.05


    Original     		PDF 2SC4954 2SC4954-T2 2SC4954-T1 NEC 2581 nec 2405 2581 NEC zo 103 ma 75 607 30460 pulse 01940 9590 IC 2030 PIN CONNECTIONS 5598 transistor 2SC4954-T1

    NEC 2581

    Abstract: nec 258 2581 NEC 574 nec 2SC4954 2SC4954-T1 2SC4954-T2 26480 30460 NEC 821
    Text: DATA SHEET SILICON TRANSISTOR 2SC4954 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES PACKAGE DIMENSIONS • Low Noise, High Gain in millimeters • Low Voltage Operation • Low Feedback Capacitance +0.1 0.4 –0.05


    Original     		PDF 2SC4954 2SC4954-T1 NEC 2581 nec 258 2581 NEC 574 nec 2SC4954 2SC4954-T1 2SC4954-T2 26480 30460 NEC 821

    2SC4958

    Abstract: nec 473
    Text: DATA SHEET SILICON TRANSISTOR 2SC4958 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD FEATURES • • • PACKAGE DIMENSIONS Low Noise, High Gain in millimeters Low Voltage Operation 2.1 ± 0.1 Low Feedback Capacitance


    Original     		PDF 2SC4958 2SC4958) 2SC4958 nec 473

    nec 2410

    Abstract: transistor marking T83 ghz 2SC4959 63950 2SC4959-T1
    Text: DATA SHEET SILICON TRANSISTOR 2SC4959 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS Low Noise, High Gain in millimeters Low Voltage Operation 2.1 ± 0.1 Low Feedback Capacitance 1.25 ± 0.1


    Original     		PDF 2SC4959 2SC4959 nec 2410 transistor marking T83 ghz 63950 2SC4959-T1

    2SC4987

    Abstract: ITR07808 ITR07809 ITR07810 ITR07811 ITR07812
    Text: Ordering number:ENN4723 NPN Epitaxial Planar Silicon Transistor 2SC4987 High-Speed Switching Applications Features Package Dimensions • High-speed switching. · Low collector saturation voltage. · High gain-bandwidth product. · Small collector capacitance.


    Original     		PDF ENN4723 2SC4987 2SC4987] 2SC4987 ITR07808 ITR07809 ITR07810 ITR07811 ITR07812

    IC nec 555

    Abstract: ic 7490 marking 691 ic 7490 data sheet nec 7604 4440 audio amplifier Datasheet of 7490 IC ic 7490 description 2SC4955 2SC4955-T1
    Text: DATA SHEET SILICON TRANSISTOR 2SC4955 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES • Low Noise, High Gain PACKAGE DIMENSIONS • Low Voltage Operation in millimeters • Low Feedback Capacitance 2.8±0.2 +0.1 0.4 –0.05


    Original     		PDF 2SC4955 2SC4955-T2 2SC4955-T1 IC nec 555 ic 7490 marking 691 ic 7490 data sheet nec 7604 4440 audio amplifier Datasheet of 7490 IC ic 7490 description 2SC4955 2SC4955-T1

    IC nec 555

    Abstract: 4440 audio amplifier 7120 ic 7490 data sheet 2SC4955 2SC4955-T1 2SC4955-T2 07630
    Text: DATA SHEET SILICON TRANSISTOR 2SC4955 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES • Low Noise, High Gain PACKAGE DIMENSIONS • Low Voltage Operation in millimeters • Low Feedback Capacitance 2.8±0.2 +0.1 0.4 –0.05


    Original     		PDF 2SC4955 2SC4955-T2 IC nec 555 4440 audio amplifier 7120 ic 7490 data sheet 2SC4955 2SC4955-T1 2SC4955-T2 07630

    ma 8920

    Abstract: ZO 607 transistor ic 7490 data sheet 2SC4956 2SC4956-T1 2SC4956-T2 51160
    Text: DATA SHEET SILICON TRANSISTOR 2SC4956 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD FEATURES • Low Noise, High Gain PACKAGE DIMENSIONS • Low Voltage Operation in millimeters • Low Feedback Capacitance Cre = 0.20 pF TYP.


    Original     		PDF 2SC4956 2SC4956-T2 2SC4956-T1 ma 8920 ZO 607 transistor ic 7490 data sheet 2SC4956 2SC4956-T1 2SC4956-T2 51160

    nec 2571 4 pin

    Abstract: nec 2571 3771 nec ZO 103 MA 75 603 2SC4957 2SC4957-T1 2SC4957-T2 marking 2748 transistor marking T83 ghz
    Text: DATA SHEET SILICON TRANSISTOR 2SC4957 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD FEATURES • Low Noise, High Gain PACKAGE DIMENSIONS • Low Voltage Operation in millimeters • Low Feedback Capacitance Cre = 0.3 pF TYP.


    Original     		PDF 2SC4957 2SC4957-T2 2SC4957-T1 nec 2571 4 pin nec 2571 3771 nec ZO 103 MA 75 603 2SC4957 2SC4957-T1 2SC4957-T2 marking 2748 transistor marking T83 ghz

    NPN BH RE

    Abstract: BFQ13 BFQ131
    Text: Philips Semiconductors Product specification NPN video transistor BFQ131 FEATURES DESCRIPTION • Low output capacitance NPN silicon transistor in a 3-lead plastic SOT54 package. • High dissipation • High gain bandwidth product. PINNING APPLICATIONS PIN


    OCR Scan     		PDF BFQ131 NPN BH RE BFQ13 BFQ131

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification NPN video transistors BFQ236; BFQ236A FEATURES DESCRIPTION • High breakdown voltages NPN video transistor in a SOT223 plastic package. PNP complements: BFQ256 and BFQ256A. • Low output capacitance • High gain bandwidth


    OCR Scan     		PDF BFQ236; BFQ236A OT223 BFQ256 BFQ256A. OT223) BFQ236 BFQ236A

    BFQ161

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification NPN video transistor BFQ161 FEATURES DESCRIPTION • Low output capacitance NPN video transistor in a SOT54 TO-92 plastic package. • High gain bandwidth • High current applicability • Good thermal stability


    OCR Scan     		PDF BFQ161 MEA205 BFQ161

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification NPN video transistors BFQ231 ; BFQ231A FEATURES DESCRIPTION • High breakdown voltages NPN video transistor in a SOT54 TO-92 plastic package. PNP complements: BFQ251 and BFQ251A. • Low output capacitance • High gain bandwidth


    OCR Scan     		PDF BFQ231 BFQ231A BFQ251 BFQ251A. BFQ231 BFQ231A

    m02 marking transistor

    Abstract: m02 marking gain equivalent of SL 100 NPN Transistor marking b4c BFM505 MAM210 bi 370 transistor dual TMA 900 TMA 900 3064 6pin
    Text: Philips Semiconductors Product specification Dual NPN wideband transistor BFM505 PINNING - SOT363A FEATURES • Small size PIN SYMBOL DESCRIPTION • Temperature and hpE matched 1 bi base 1 • Low noise and high gain 2 01 emitter 1 • High gain at low current and low capacitance at low


    OCR Scan     		PDF BFM505 OT363 OT363A 7110fl2b OT363. m02 marking transistor m02 marking gain equivalent of SL 100 NPN Transistor marking b4c BFM505 MAM210 bi 370 transistor dual TMA 900 TMA 900 3064 6pin

    sot363a

    Abstract: 3064 6pin BFM505 semiconductors bi 370 MAM210 NPN power transistor spice marking aded bi 370 transistor
    Text: Philips Semiconductors Product specification Dual NPN wideband transistor BFM505 PINNING - SOT363A FEATURES • Sm all size PIN SYMBOL • Temperature and hpE matched 1 bi base 1 • Low noise and high gain 2 01 emitter 1 • High gain at low current and low capacitance at low


    OCR Scan     		PDF BFM505 OT363 OT363A 7110fl2b OT363. 711Gfl2b sot363a 3064 6pin BFM505 semiconductors bi 370 MAM210 NPN power transistor spice marking aded bi 370 transistor

    IC nec 555

    Abstract: nec b 536 transistor transistor marking T83 ghz
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC4955 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES • Low Noise, High Gain PACKAGE DIMENSIONS • Low Voltage Operation in millimeters • Low Feedback Capacitance 2 . 8 ± 0.2


    OCR Scan     		PDF 2SC4955 2SC4955-T1 2SC4955-T2 IC nec 555 nec b 536 transistor transistor marking T83 ghz

    nec 2410

    Abstract: transistor NEC D 587 2410 nec
    Text: DATA SHEET SILICON TRANSISTOR 2SC4959 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD FEATURES • Low Noise, High Gain • Low Voltage Operation • Low Feedback Capacitance C re PACKAGE DIM ENSIONS in m illim eters 2.1


    OCR Scan     		PDF 2SC4959 4959-T 4959-T2 nec 2410 transistor NEC D 587 2410 nec

    transistor NEC D 986

    Abstract: transistor NEC D 587 NEC D 986 150GHz
    Text: DATA SHEET SILICON TRANSISTOR 2SC4956 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD FEATURES • Low Noise, High Gain PACKAGE DIMENSIONS • Low Voltage Operation in millimeters • Low Feedback Capacitance Cre = 0.20 pF TYP.


    OCR Scan     		PDF 2SC4956 2SC4956-T1 4956-T2 2SC4956) transistor NEC D 986 transistor NEC D 587 NEC D 986 150GHz

    NEC D 553 C

    Abstract: TRANSISTOR MAC 223 NEC IC D 553 C
    Text: DATA SHEET SILICON TRANSISTOR 2SC4957 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD FEATURES • Low Noise, High Gain PACKAGE DIMENSIONS • Low Voltage Operation in millimeters • Low Feedback Capacitance C re = 0.3 pF TYP.


    OCR Scan     		PDF 2SC4957 2SC4957-T1 2SC4957-T2 Ple-107 NEC D 553 C TRANSISTOR MAC 223 NEC IC D 553 C

    pulse 01940

    Abstract: NEC IC D 553 C 5598 transistor transistor D 2581 NEC 2581 30460
    Text: DATA SHEET SILICON TRANSISTOR 2SC4954 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES • Low Noise, High Gain • Low V oltage Operation • Low Feedback Capacitance C re PACKAGE DIMENSIONS in millimeters 2 .8 ± 0.2


    OCR Scan     		PDF 2SC4954 4954-T sh527 pulse 01940 NEC IC D 553 C 5598 transistor transistor D 2581 NEC 2581 30460

    nec 2410

    Abstract: pulse 01940
    Text: DATA SHEET SILICON TRANSISTOR 2SC4959 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD FEATURES • Low Noise, High Gain • Low Voltage Operation • Low Feedback Capacitance C re PACKAGE DIMENSIONS in m illim eters •


    OCR Scan     		PDF 2SC4959 2SC4959-T1 4959-T2 nec 2410 pulse 01940

    transistor NEC D 587

    Abstract: No abstract text available
    Text: DATA SHEET SILICON TRANSISTOR 2SC4956 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD FEATURES • Low Noise, High Gain PACKAGE DIMENSIONS • Low Voltage Operation in millimeters • Low Feedback Capacitance C re = 0.20 pF TYP.


    OCR Scan     		PDF 2SC4956 2SC4956-T1 2SC4956-T2 2SC4956) CONNECTI50 transistor NEC D 587

    8060 transistor

    Abstract: NT 407 F TRANSISTOR mps 442 0533 OHMITE MPS-H24
    Text: MPS-H24 silicon NPN SILICON VH F TRANSISTOR NPN SILICON EP ITA X IA L TRANSISTOR . . . designed for V H F mixer applications in T V receivers. Excellent Conversion Gain — 24 dB (Typ) Low Collector-Base Capacitance — Ccb = 0.36 pF (Max) High Current-Gain—Bandwidth Product —


    OCR Scan     		PDF MPS-H24 470pF 8060 transistor NT 407 F TRANSISTOR mps 442 0533 OHMITE MPS-H24