motorola handbook
Abstract: DL140 MC100E416 MC10E416
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quint Differential Line Receiver MC10E416 MC100E416 The MC10E416/100E416 is a 5-bit differential line receiving device. The 2.0GHz of bandwidth provided by the high frequency outputs makes the device ideal for buffering of very high speed oscillators.
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MC10E416
MC100E416
MC10E416/100E416
MC10E416/D*
MC10E416/D
DL140
motorola handbook
MC100E416
MC10E416
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NESG2107M33
Abstract: NESG2107M33-A NESG2107M33-T3-A A720A
Text: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2107M33 NPN SiGe RF TRANSISTOR FOR HIGH FREQUENCY, LOW NOISE, HIGH-GAIN AMPLIFICATION 3-PIN SUPER LEAD-LESS MINIMOLD M33, 0804 PKG FEATURES • The device is an ideal choice for OSC, low noise, high-gain amplification
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NESG2107M33
NESG2107M33-T3
NESG2107M33-A
NESG2107M33-T3-A
NESG2107M33
NESG2107M33-A
NESG2107M33-T3-A
A720A
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marking NEC rf transistor
Abstract: nec npn rf
Text: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2107M33 NPN SiGe RF TRANSISTOR FOR HIGH FREQUENCY, LOW NOISE, HIGH-GAIN AMPLIFICATION 3-PIN SUPER LEAD-LESS MINIMOLD FEATURES • The device is an ideal choice for OSC, low noise, high-gain amplification • SiGe technology adopted
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NESG2107M33
NESG2107M33
NESG2107M33-T3
NESG2107M33-A
NESG2107M33-T3-A
marking NEC rf transistor
nec npn rf
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DS90LV027
Abstract: DS90LV027M M08A
Text: General Description Features The DS90LV027 is a dual LVDS driver device optimized for high data rate and low power applications. The DS90LV027 is a current mode driver allowing power dissipation to remain low even at high frequency. In addition, the short circuit fault
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DS90LV027
DS90LV027
ds100029
DS90LV027M
M08A
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DS90LV017
Abstract: DS90LV017M M08A
Text: General Description Features The DS90LV017 is a single LVDS driver device optimized for high data rate and low power applications. The DS90LV017 is a current mode driver allowing power dissipation to remain low even at high frequency. In addition, the short circuit fault
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DS90LV017
DS90LV017
TIA/EIA-644
ds012900
DS90LV017M
M08A
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G2181
Abstract: 20-PIN HS350 PG2181T5R
Text: DATA SHEET GaAs INTEGRATED CIRCUIT PG2181T5R HIGH POWER DP4T SWITCH FOR WiMAX DESCRIPTION The μPG2181T5R is a GaAs MMIC high power DP4T switch which was developed for WiMAX. This device can operate frequency from 2.3 to 3.8 GHz, having the low insertion loss and high isolation.
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PG2181T5R
PG2181T5R
20-pin
G2181
HS350
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BC237
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Frequency Transistor MPS5179 NPN Silicon Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Collector – Emitter Voltage VCEO 12 Vdc Collector – Base Voltage VCBO
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MPS5179
226AA)
Susta218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
BC237
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Untitled
Abstract: No abstract text available
Text: DATA SHEET GaAs INTEGRATED CIRCUIT PG2409TB HIGH POWER SPDT SWITCH FOR WiMAX TM DESCRIPTION The μPG2409TB is a GaAs MMIC high power SPDT Single Pole Double Throw switch which were designed for WiMAX. This device can operate frequency from 0.5 to 3.8 GHz, having the low insertion loss and high isolation.
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PG2409TB
PG2409TB
SC-88/SOT-363
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Untitled
Abstract: No abstract text available
Text: DATA SHEET GaAs INTEGRATED CIRCUIT PG2409TB HIGH POWER SPDT SWITCH FOR WiMAX TM DESCRIPTION The μPG2409TB is a GaAs MMIC high power SPDT Single Pole Double Throw switch which were designed for WiMAX. This device can operate frequency from 0.5 to 3.8 GHz, having the low insertion loss and high isolation.
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PG2409TB
PG2409TB
SC-88/SOT-363
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PG2409T6X-E2
Abstract: No abstract text available
Text: DATA SHEET GaAs INTEGRATED CIRCUIT PG2409T6X HIGH POWER SPDT SWITCH FOR WiMAX TM DESCRIPTION The μPG2409T6X is a GaAs MMIC high power SPDT Single Pole Double Throw switch which were designed for WiMAX. This device can operate frequency from 0.05 to 6.0 GHz, having the low insertion loss and high isolation.
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PG2409T6X
PG2409T6X
PG2409T6X-E2
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PG2409T6X
Abstract: PG2409T6X-E2
Text: DATA SHEET GaAs INTEGRATED CIRCUIT PG2409T6X HIGH POWER SPDT SWITCH FOR WiMAX TM DESCRIPTION The μPG2409T6X is a GaAs MMIC high power SPDT Single Pole Double Throw switch which were designed for WiMAX. This device can operate frequency from 0.05 to 6.0 GHz, having the low insertion loss and high isolation.
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PG2409T6X
PG2409T6X
PG2409T6X-E2
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UPG2176T5N
Abstract: HS350 PG2176T5N
Text: DATA SHEET GaAs INTEGRATED CIRCUIT PG2176T5N NON-REFLECTIVE HIGH POWER SPDT SWITCH FOR WiMAX DESCRIPTION The UPG2176T5N is a non-reflective 50Ω termination GaAs MMIC high power SPDT (Single Pole Double Throw) switch for WiMAX. This device can operate from frequency 2.3 to 5.85 GHz, with low insertion loss and high isolation.
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PG2176T5N
UPG2176T5N
HS350
PG2176T5N
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UPG2176
Abstract: No abstract text available
Text: DATA SHEET GaAs INTEGRATED CIRCUIT +PG2176T5N NON-REFLECTIVE HIGH POWER SPDT SWITCH FOR WiMAX DESCRIPTION The UPG2176T5N is a non-reflective 50ї termination GaAs MMIC high power SPDT (Single Pole Double Throw) switch for WiMAX. This device can operate from frequency 2.3 to 5.85 GHz, with low insertion loss and high isolation.
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PG2176T5N
UPG2176T5N
UPG2176
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12-PIN
Abstract: HS350
Text: DATA SHEET GaAs INTEGRATED CIRCUIT PG2157T5F NON-REFLECTIVE HIGH POWER SPDT SWITCH FOR WiMAX DESCRIPTION The UPG2157T5F is a non-reflective 50 termination GaAs MMIC high power SPDT (Single Pole Double Throw) switch for WiMAX. This device can operate from frequency 2.3 to 5.85 GHz, with low insertion loss and high isolation.
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PG2157T5F
UPG2157T5F
12-pin
HS350
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Untitled
Abstract: No abstract text available
Text: DATA SHEET GaAs INTEGRATED CIRCUIT PG2183T6C 4 W HIGH POWER SP4T SWITCH DESCRIPTION The μPG2183T6C is a GaAs MMIC SP4T Single Pole Four Throw switch which was designed for digital cellular phone application. This device can operate frequency from 0.5 to 2.5 GHz, having the low insertion loss and high isolation.
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PG2183T6C
PG2183T6C
16-pin
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Untitled
Abstract: No abstract text available
Text: DATA SHEET GaAs INTEGRATED CIRCUIT PG2183T6C 4 W HIGH POWER SP4T SWITCH DESCRIPTION The μPG2183T6C is a GaAs MMIC SP4T Single Pole Four Throw switch which was designed for digital cellular phone application. This device can operate frequency from 0.5 to 2.5 GHz, having the low insertion loss and high isolation.
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PG2183T6C
PG2183T6C
16-pin
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upc4559
Abstract: G12984EJ6V0DS00 uPC4559 equivalent UPC4559C PC4558C
Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC4559 HIGH PERFORMANCE DUAL OPERATIONAL AMPLIFIER DESCRIPTION The µPC4559 is a dual type operational amplifier having better slew rate and bandwidth than the µPC4558C with satisfying unity gain frequency compensation. Having low noise characteristics, this device is very convenient to make
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PC4559
PC4559
PC4558C
PC4559C
upc4559
G12984EJ6V0DS00
uPC4559 equivalent
UPC4559C
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PC4558C
Abstract: C10535E G1298 UPC4558C uPC4559 equivalent PC4559C UPC4558C equivalent
Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC4559 HIGH PERFORMANCE DUAL OPERATIONAL AMPLIFIER DESCRIPTION The µPC4559 is a dual type operational amplifier having better slew rate and bandwidth than the µPC4558C with satisfying unity gain frequency compensation. Having low noise characteristics, this device is very convenient to
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PC4559
PC4559
PC4558C
PC4559C
C10535E
G1298
UPC4558C
uPC4559 equivalent
PC4559C
UPC4558C equivalent
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PG2157
Abstract: No abstract text available
Text: DATA SHEET GaAs INTEGRATED CIRCUIT PG2157T5F 50 Ω TERMINATION TYPE HIGH POWER SPDT SWITCH FOR WiMAX DESCRIPTION The μPG2157T5F is a GaAs MMIC 50 Ω termination type high power SPDT Single Pole Double Throw switch which was developed for WiMAX. This device can operate frequency from 2.3 to 5.85 GHz, having the low insertion
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PG2157T5F
PG2157T5F
12-pin
PG2157
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marking 6-PIN PLASTIC TSON
Abstract: No abstract text available
Text: DATA SHEET GaAs INTEGRATED CIRCUIT PG2176T5N 50 Ω TERMINATION TYPE HIGH POWER SPDT SWITCH FOR WiMAX DESCRIPTION The μPG2176T5N is a GaAs MMIC 50 Ω termination type high power SPDT Single Pole Double Throw switch which was developed for WiMAX. This device can operate frequency from 2.3 to 5.85 GHz, having the low insertion
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PG2176T5N
PG2176T5N
marking 6-PIN PLASTIC TSON
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Untitled
Abstract: No abstract text available
Text: DATA SHEET GaAs INTEGRATED CIRCUIT PG2176T5N 50 Ω TERMINATION TYPE HIGH POWER SPDT SWITCH FOR WiMAX DESCRIPTION The μPG2176T5N is a GaAs MMIC 50 Ω termination type high power SPDT Single Pole Double Throw switch which was developed for WiMAX. This device can operate frequency from 2.3 to 5.85 GHz, having the low insertion
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PG2176T5N
PG2176T5N
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Untitled
Abstract: No abstract text available
Text: DATA SHEET GaAs INTEGRATED CIRCUIT PG2176T5N 50 Ω TERMINATION TYPE HIGH POWER SPDT SWITCH FOR WiMAX DESCRIPTION The μPG2176T5N is a GaAs MMIC 50 Ω termination type high power SPDT Single Pole Double Throw switch which was developed for WiMAX. This device can operate frequency from 2.3 to 5.85 GHz, having the low insertion
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PG2176T5N
PG2176T5N
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quint Differential Line Receiver MC10E416 MC100E416 The MC10E416/100E416 is a 5-bit differential line receiving device. The 2.0GHz of bandwidth provided by the high frequency outputs makes the device ideal for buffering of very high speed oscillators.
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MC10E416
MC100E416
MC10E416/100E416
b3b7252
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quint Differential Line Receiver MC10E416 M C100E416 The M C 10E416/100E416 is a 5-bi1 differential line receiving device. The 2.0G H z of bandwidth provided by the high frequency outputs makes the device ideal for buffering o f very high speed oscillators.
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MC10E416/MC100E416
DL140
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