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    HIGH CURRENT SOT-363 P-CHANNEL MOSFET Search Results

    HIGH CURRENT SOT-363 P-CHANNEL MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1ZMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC MOSFET、Low-side: SiC SBD Visit Toshiba Electronic Devices & Storage Corporation
    SSM3K361R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 100 V, 3.5 A, 0.069 Ohm@10V, SOT-23F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    SSM3K341R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 60 V, 6.0 A, 0.036 Ohm@10V, SOT-23F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    HIGH CURRENT SOT-363 P-CHANNEL MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TRANSISTOR MOTOROLA MAC 223

    Abstract: MRF9282 MRF1510 triac MAC 97 AB MSB81T1 solid state 220 volt stabilizer circuit MHW8272 MRF9242 10 amp igbt 1000 volt 100 amp 1200 volt Triac
    Text: NEW PRODUCT CALENDAR and KEY FOCUS PRODUCTS 3Q96 CALCPSTG/D REV 8 This quarterly folder includes information on products by the Communications, Power and Signal Technologies Group CPSTG , which comprises four organizations. These organizations are the RF Semiconductor Division, specializing in low power and high power discrete transistors, hybrid circuits for power amplifiers (modules),


    Original     		PDF

    BC547 sot package sot-23

    Abstract: BC337 BC547 2N2484 motorola MSB81T1 zt751 pin configuration NPN transistor BC547 sot-23 MMBF4856 SOT-223 P1f P1F motorola 2N2222A plastic package
    Text: Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola’s GreenLine portfolio of devices. They feature energy–conserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the


    Original     		PDF MDC5000T1 MDC5001T1 MDC3105LT1 BC547 sot package sot-23 BC337 BC547 2N2484 motorola MSB81T1 zt751 pin configuration NPN transistor BC547 sot-23 MMBF4856 SOT-223 P1f P1F motorola 2N2222A plastic package

    NTJS3151P

    Abstract: NTJS3151PT1 NTJS3151PT1G
    Text: NTJS3151P Trench Power MOSFET 12 V, 3.3 A, Single P−Channel, ESD Protected SC−88 Features • • • • Leading Trench Technology for Low RDS ON Extending Battery Life SC−88 Small Outline (2x2 mm, SC70−6 Equivalent) Gate Diodes for ESD Protection


    Original     		PDF NTJS3151P SC-88 SC-88 SC70-6 NTJS3151P/D NTJS3151P NTJS3151PT1 NTJS3151PT1G

    NTJS4151P

    Abstract: NTJS4151PT1 NTJS4151PT1G
    Text: NTJS4151P Trench Power MOSFET −20 V, −4.2 A, Single P−Channel, SC−88 Features • Leading Trench Technology for Low RDS ON Extending Battery Life • SC−88 Small Outline (2x2 mm) for Maximum Circuit Board • • Utilization, Same as SC−70−6


    Original     		PDF NTJS4151P SC-88 SC-88 SC-70-6 NTJS4151P/D NTJS4151P NTJS4151PT1 NTJS4151PT1G

    NTJD1155LT1

    Abstract: NTJD1155L NTJD1155LT1G
    Text: NTJD1155L Power MOSFET 8 V, +1.3 A, High Side Load Switch with Level−Shift, P−Channel SC−88 The NTJD1155L integrates a P and N−Channel MOSFET in a single package. This device is particularly suited for portable electronic equipment where low control signals, low battery voltages and high


    Original     		PDF NTJD1155L SC-88 NTJD1155L NTJD1155L/D NTJD1155LT1 NTJD1155LT1G

    NTJD1155L

    Abstract: NTJD1155LT1 NTJD1155LT1G
    Text: NTJD1155L Power MOSFET 8 V, +1.3 A, High Side Load Switch with Level−Shift, P−Channel SC−88 The NTJD1155L integrates a P and N−Channel MOSFET in a single package. This device is particularly suited for portable electronic equipment where low control signals, low battery voltages and high


    Original     		PDF NTJD1155L SC-88 NTJD1155L NTJD1155L/D NTJD1155LT1 NTJD1155LT1G

    NTJD1155LT1G

    Abstract: NTJD1155L NTJD1155LT1
    Text: NTJD1155L Power MOSFET 8 V, +1.3 A, High Side Load Switch with Level−Shift, P−Channel SC−88 The NTJD1155L integrates a P and N−Channel MOSFET in a single package. This device is particularly suited for portable electronic equipment where low control signals, low battery voltages and high


    Original     		PDF NTJD1155L SC-88 NTJD1155L/D NTJD1155LT1G NTJD1155LT1

    Untitled

    Abstract: No abstract text available
    Text: NTJD1155L Power MOSFET 8 V, +1.3 A, High Side Load Switch with Level−Shift, P−Channel SC−88 The NTJD1155L integrates a P and N−Channel MOSFET in a single package. This device is particularly suited for portable electronic equipment where low control signals, low battery voltages and high


    Original     		PDF NTJD1155L NTJD1155L NTJD1155L/D

    Load Switch SOT-363

    Abstract: sot-363 n-channel mosfet MOSFET ESD Rated P CHANNEL POWER MOSFET NTJD1155L NTJD1155LT1G marking 52N sot363 TE SC88 NTJD1155LT1 p mosfet
    Text: NTJD1155L Power MOSFET 8 V, +1.3 A, High Side Load Switch with Level−Shift, P−Channel SC−88 The NTJD1155L integrates a P and N−Channel MOSFET in a single package. This device is particularly suited for portable electronic equipment where low control signals, low battery voltages and high


    Original     		PDF NTJD1155L SC-88 NTJD1155L NTJD1155L/D Load Switch SOT-363 sot-363 n-channel mosfet MOSFET ESD Rated P CHANNEL POWER MOSFET NTJD1155LT1G marking 52N sot363 TE SC88 NTJD1155LT1 p mosfet

    NTJD1155L

    Abstract: No abstract text available
    Text: NTJD1155L Power MOSFET 8 V, +1.3 A, High Side Load Switch with Level−Shift, P−Channel SC−88 The NTJD1155L integrates a P and N−Channel MOSFET in a single package. This device is particularly suited for portable electronic equipment where low control signals, low battery voltages and high


    Original     		PDF NTJD1155L SC-88 NTJD1155L/D

    F 5M 365 R

    Abstract: 5M 365 R SOT23 MARKING N02 n02 mosfet 948S
    Text: NTUD01N02 Product Preview Power MOSFET 100 mAmps, 20 Volts Dual N–Channel SC–88 • • • • • • 2.5 V Gate Drive with Low On–Resistance Low Threshold Voltage: Vth = 0.5 to 1.5 V, Ideal for Portable High Speed Enhancement Mode Small Package Easily Designed Drive Circuits


    Original     		PDF NTUD01N02 88/SOTU F 5M 365 R 5M 365 R SOT23 MARKING N02 n02 mosfet 948S

    sot-363 702

    Abstract: No abstract text available
    Text: NTJS3151P Trench Power MOSFET 12 V, 3.3 A, Single P−Channel, ESD Protected SC−88 Features • • • • Leading Trench Technology for Low RDS ON Extending Battery Life SC−88 Small Outline (2x2 mm, SC70−6 Equivalent) Gate Diodes for ESD Protection


    Original     		PDF NTJS3151P SC-88 SC-88 SC70-6 sot-363 702

    Untitled

    Abstract: No abstract text available
    Text: NTJS4151P Trench Power MOSFET −20 V, −4.2 A, Single P−Channel, SC−88 Features • Leading Trench Technology for Low RDS ON Extending Battery Life • SC−88 Small Outline (2x2 mm) for Maximum Circuit Board • • Utilization, Same as SC−70−6


    Original     		PDF NTJS4151P SC-88 SC-88 SC-70-6

    c6067

    Abstract: NTJS3151PT1G NTJS3151P NTJS3151PT1 NTJS3151PT2 NTJS3151PT2G P-Channel mosfet sot-363 102 marking
    Text: NTJS3151P Trench Power MOSFET 12 V, 3.3 A, Single P−Channel, ESD Protected SC−88 Features • • • • Leading Trench Technology for Low RDS ON Extending Battery Life SC−88 Small Outline (2x2 mm, SC70−6 Equivalent) Gate Diodes for ESD Protection


    Original     		PDF NTJS3151P SC-88 SC-88 SC70-6 OT-363) NTJS3151P/D c6067 NTJS3151PT1G NTJS3151P NTJS3151PT1 NTJS3151PT2 NTJS3151PT2G P-Channel mosfet sot-363 102 marking

    Untitled

    Abstract: No abstract text available
    Text: NTJS3151P Trench Power MOSFET 12 V, 3.3 A, Single P−Channel, ESD Protected SC−88 Features • • • • Leading Trench Technology for Low RDS ON Extending Battery Life SC−88 Small Outline (2x2 mm, SC70−6 Equivalent) Gate Diodes for ESD Protection


    Original     		PDF NTJS3151P SC-88 SC-88 SC70-6 NTJS3151P/D

    NTJS4151P

    Abstract: NTJS4151PT1 NTJS4151PT1G
    Text: NTJS4151P Trench Power MOSFET −20 V, −4.2 A, Single P−Channel, SC−88 Features • Leading Trench Technology for Low RDS ON Extending Battery Life • SC−88 Small Outline (2x2 mm) for Maximum Circuit Board Utilization, Same as SC−70−6 • Gate Diodes for ESD Protection


    Original     		PDF NTJS4151P SC-88 SC-88 SC-70-6 OT-363) NTJS4151P/D NTJS4151P NTJS4151PT1 NTJS4151PT1G

    Untitled

    Abstract: No abstract text available
    Text: NTJS4151P Trench Power MOSFET −20 V, −4.2 A, Single P−Channel, SC−88 Features • Leading Trench Technology for Low RDS ON Extending Battery Life • SC−88 Small Outline (2x2 mm) for Maximum Circuit Board Utilization, Same as SC−70−6 http://onsemi.com


    Original     		PDF NTJS4151P NTJS4151P/D

    2N6284 inverter schematic diagram

    Abstract: NTD18N06 MKP9V160 sine wave inverter tl494 circuit diagram ECL IC NAND adp3121 DARLINGTON TRANSISTOR ARRAY ezairo MC74HC4538 TIP142 6403 F
    Text: ON Semiconductor Master Components Selector Guide AC−DC Controllers and Regulators; Amplifiers and Comparators; Analog Switches; Bipolar Transistors; Clock and Data Distribution; Clock Generation; Custom; DC−DC Controllers, Converters, and Regulators; Digital


    Original     		PDF SG388/D 2N6284 inverter schematic diagram NTD18N06 MKP9V160 sine wave inverter tl494 circuit diagram ECL IC NAND adp3121 DARLINGTON TRANSISTOR ARRAY ezairo MC74HC4538 TIP142 6403 F

    Untitled

    Abstract: No abstract text available
    Text: NVJS4151P Trench Power MOSFET −20 V, −4.3 A, Single P−Channel, SC−88 Features • Leading Trench Technology for Low RDS ON Extending Battery Life • SC−88 Small Outline (2x2 mm) for Maximum Circuit Board http://onsemi.com Utilization, Same as SC−70−6


    Original     		PDF NVJS4151P NVJS4151P/D

    Untitled

    Abstract: No abstract text available
    Text: NTJS4151P Trench Power MOSFET −20 V, −4.2 A, Single P−Channel, SC−88 Features • Leading Trench Technology for Low RDS ON Extending Battery Life • SC−88 Small Outline (2x2 mm) for Maximum Circuit Board • • Utilization, Same as SC−70−6


    Original     		PDF NTJS4151P NTJFS4151P/D

    Untitled

    Abstract: No abstract text available
    Text: NVJS4151P Trench Power MOSFET −20 V, −4.1 A, Single P−Channel, SC−88 Features • Leading Trench Technology for Low RDS ON Extending Battery Life • SC−88 Small Outline (2x2 mm) for Maximum Circuit Board • • • Utilization, Same as SC−70−6


    Original     		PDF NVJS4151P NVJS4151P/D

    Untitled

    Abstract: No abstract text available
    Text: NTJS4151P, NVJS4151P Trench Power MOSFET −20 V, −4.2 A, Single P−Channel, SC−88 Features • Leading Trench Technology for Low RDS ON Extending Battery Life • SC−88 Small Outline (2x2 mm) for Maximum Circuit Board • • • Utilization, Same as SC−70−6


    Original     		PDF NTJS4151P, NVJS4151P NTJFS4151P/D

    BC337 BC547

    Abstract: MSB81T1 MBT3904DW9T1 marking 6AA SOD MVAM115 automatic stabilizer circuit diagram range 210 to 250 volts zt751 MBT3904DW9 transistor 2N4125 CT BC547 TRANSISTOR PIN DIAGRAM
    Text: Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola’s GreenLine portfolio of devices. They feature energy–conserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the


    Original     		PDF MDC5000T1 MDC3105LT1 BC337 BC547 MSB81T1 MBT3904DW9T1 marking 6AA SOD MVAM115 automatic stabilizer circuit diagram range 210 to 250 volts zt751 MBT3904DW9 transistor 2N4125 CT BC547 TRANSISTOR PIN DIAGRAM

    IGBT Battery 120 watt Charger circuit diagrams

    Abstract: tl494 spice model four relay stabilizer circuit diagram 650 va gsm door lock circuit diagram MRC 433 mosfet MC34066 SOLUTION FOR SMPS USING TL494 MOSFET ESD Rated TL594 phone charger car power inverter TL494
    Text: BRD8016/D Rev. 0, Nov-2000 Wireless Component Solutions for Handsets and Accessories Wireless Component Solutions for Handsets and Accessories BRD8016/D Rev. 0, Nov–2000  SCILLC, 2000 “All Rights Reserved’’ WIRELESS EZFET is a trademark of Semiconductor Components Industries, LLC SCILLC .


    Original     		PDF BRD8016/D Nov-2000 r14525 IGBT Battery 120 watt Charger circuit diagrams tl494 spice model four relay stabilizer circuit diagram 650 va gsm door lock circuit diagram MRC 433 mosfet MC34066 SOLUTION FOR SMPS USING TL494 MOSFET ESD Rated TL594 phone charger car power inverter TL494