2E12
Abstract: FRE9160D FRE9160H FRE9160R
Text: FRE9160D, FRE9160R, FRE9160H 30A, -100V, 0.095 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 30A, -100V, RDS on = 0.095Ω TO-258AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current
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FRE9160D,
FRE9160R,
FRE9160H
-100V,
O-258AA
100KRAD
300KRAD
1000KRAD
3000KRAD
2E12
FRE9160D
FRE9160H
FRE9160R
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delta plc
Abstract: 2E12 FRE9160D FRE9160H FRE9160R star delta plc Rad Hard in Fairchild for MOSFET FRE9160
Text: FRE9160D, FRE9160R, FRE9160H 30A, -100V, 0.095 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 30A, -100V, RDS on = 0.095Ω TO-258AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current
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Original
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PDF
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FRE9160D,
FRE9160R,
FRE9160H
-100V,
O-258AA
100KRAD
300KRAD
1000KRAD
3000KRAD
delta plc
2E12
FRE9160D
FRE9160H
FRE9160R
star delta plc
Rad Hard in Fairchild for MOSFET
FRE9160
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Untitled
Abstract: No abstract text available
Text: APTLM50HM75FRT Phase Shift Operation MOSFET Power Module VDSS = 500V RDSon = 75mΩ Ω max @ Tj = 25°C ID = 43A @ Tc = 25°C Application • • • • • • • Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies High frequency Power Supply
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APTLM50HM75FRT
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100V 60A Mosfet
Abstract: 100 amp mosfet 12 VOLT 100 AMP smps smps 12 volt 3 amp smps 12 volt OM90335SF-100 OM90335SF-30 OM90335SF-50 OM90335SF-60 30a13m
Text: OM90335SF Series THREE PHASE BRUSHLESS MOTOR DRIVER MODULES IN HERMETIC ISOLATED PACKAGES 60 And 100 Volt, 50 To 100 Amp MOSFET Modules, Including Gate Drive For Complete 3-Phase Brushless Motor Control FEATURES • Hermetic Isolated Metal And Ceramic Packages
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OM90335SF
OM90335SF-30/60
OM90335SF-60A
OM90335SF-30/60/60A
100V 60A Mosfet
100 amp mosfet
12 VOLT 100 AMP smps
smps 12 volt 3 amp
smps 12 volt
OM90335SF-100
OM90335SF-30
OM90335SF-50
OM90335SF-60
30a13m
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DIODE T25 4 H5
Abstract: diode bridge 8A 220V ZVT full bridge ZVT full bridge for welding 220v 25a diode bridge T25 4 h5 mosfet 3kw 3kw mosfet switching power supply 3kw pcb 3kw mosfet power supply
Text: APTLM50H10FRT Phase Shift Operation MOSFET Power Module VDSS = 500V RDSon = 100mΩ Ω max @ Tj = 25°C ID = 37A @ Tc = 25°C Application • • • • • • • Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies High frequency Power Supply
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APTLM50H10FRT
20V/240V
100kHz
DIODE T25 4 H5
diode bridge 8A 220V
ZVT full bridge
ZVT full bridge for welding
220v 25a diode bridge
T25 4 h5
mosfet 3kw
3kw mosfet
switching power supply 3kw pcb
3kw mosfet power supply
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2E12
Abstract: FSYC9160D FSYC9160D1 FSYC9160D3 FSYC9160R FSYC9160R1 Rad hard MOSFETS in Harris
Text: FSYC9160D, FSYC9160R Semiconductor Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs July 1998 Features Description • 47A, -100V, rDS ON = 0.053Ω The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs
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FSYC9160D,
FSYC9160R
-100V,
2E12
FSYC9160D
FSYC9160D1
FSYC9160D3
FSYC9160R
FSYC9160R1
Rad hard MOSFETS in Harris
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2E12
Abstract: FSYC9160D FSYC9160D1 FSYC9160D3 FSYC9160R FSYC9160R1
Text: FSYC9160D, FSYC9160R Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs July 1998 Features Description • 47A, -100V, rDS ON = 0.053Ω The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically
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FSYC9160D,
FSYC9160R
-100V,
2E12
FSYC9160D
FSYC9160D1
FSYC9160D3
FSYC9160R
FSYC9160R1
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Rad Hard in Fairchild for MOSFET
Abstract: 2E12 FSYC9160D FSYC9160D1 FSYC9160D3 FSYC9160R FSYC9160R1
Text: FSYC9160D, FSYC9160R Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs December 2001 Features Description • 47A, -100V, rDS ON = 0.053Ω The Discrete Products Operation of Fairchild has developed a series of Radiation Hardened MOSFETs specifically
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FSYC9160D,
FSYC9160R
-100V,
Rad Hard in Fairchild for MOSFET
2E12
FSYC9160D
FSYC9160D1
FSYC9160D3
FSYC9160R
FSYC9160R1
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FSYC9160R
Abstract: FSYC9160R1 2E12 FSYC9160D FSYC9160D1 FSYC9160D3 Rad Hard in Fairchild for MOSFET
Text: FSYC9160D, FSYC9160R Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs July 1998 Features Description • 47A, -100V, rDS ON = 0.053Ω The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically
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FSYC9160D,
FSYC9160R
-100V,
FSYC9160R
FSYC9160R1
2E12
FSYC9160D
FSYC9160D1
FSYC9160D3
Rad Hard in Fairchild for MOSFET
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ZVT full bridge for welding
Abstract: T25 4 h5 100A CURRENT SINGLE PHASE bridge rectifier bridge rectifier single phase 240V AC bridge rectifier 240V AC ZVT full bridge 3kw mosfet power supply DIODE T25 4 H5
Text: APTLM50HM75FRT Phase Shift Operation MOSFET Power Module VDSS = 500V RDSon = 75mΩ max @ Tj = 25°C ID = 43A @ Tc = 25°C Application • • • • • • • Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies High frequency Power Supply
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APTLM50HM75FRT
20V/240V
100kHz
ZVT full bridge for welding
T25 4 h5
100A CURRENT SINGLE PHASE bridge rectifier
bridge rectifier single phase 240V AC
bridge rectifier 240V AC
ZVT full bridge
3kw mosfet power supply
DIODE T25 4 H5
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ZVT full bridge
Abstract: diode bridge 8A 220V 220v 25a diode bridge DIODE T25 4 H5 switching power supply 3kw pcb ZVT full bridge for welding 3kw mosfet power supply
Text: APTLM50H10FRT Phase Shift Operation MOSFET Power Module VDSS = 500V RDSon = 100mΩ max @ Tj = 25°C ID = 37A @ Tc = 25°C Application • • • • • • • Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies High frequency Power Supply
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PDF
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APTLM50H10FRT
20V/240V
100kHz
ZVT full bridge
diode bridge 8A 220V
220v 25a diode bridge
DIODE T25 4 H5
switching power supply 3kw pcb
ZVT full bridge for welding
3kw mosfet power supply
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1E14
Abstract: 2E12 FSPYE234D1 FSPYE234F FSPYE234R FSPYE234R3 Rad Hard in Fairchild for MOSFET
Text: FSPYE234R, FSPYE234F Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Fairchild Star*Power Rad Hard MOSFETs have been specifically TM developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the system designer both
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FSPYE234R,
FSPYE234F
FSPYE234F
1E14
2E12
FSPYE234D1
FSPYE234R
FSPYE234R3
Rad Hard in Fairchild for MOSFET
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1E14
Abstract: 2E12 FSGYE234D1 FSGYE234R3 FSGYE234R4 Rad Hard in Fairchild for MOSFET
Text: FSGYE234R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Fairchild Star*Power Rad Hard MOSFETs have been specifically TM developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the system designer both
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FSGYE234R
FSGYE234R
1E14
2E12
FSGYE234D1
FSGYE234R3
FSGYE234R4
Rad Hard in Fairchild for MOSFET
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1E14
Abstract: 2E12 FSPS234D1 FSPS234F FSPS234R FSPS234R3
Text: FSPS234R, FSPS234F Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Fairchild Star*Power Rad Hard MOSFETs have been specifically TM developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the
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FSPS234R,
FSPS234F
FSPS234F
1E14
2E12
FSPS234D1
FSPS234R
FSPS234R3
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|
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Untitled
Abstract: No abstract text available
Text: FSGS234R TM Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFET Intersil Star*Power Rad Hard MOSFETs have been specifically developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the system designer both
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FSGS234R
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Untitled
Abstract: No abstract text available
Text: FSGYE234R TM Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Intersil Star*Power Rad Hard MOSFETs have been specifically developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the system designer both
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FSGYE234R
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Untitled
Abstract: No abstract text available
Text: FRE9160D, FRE9160R, FRE9160H 30A, -100V, 0.095 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 30A, -100V, RDS on = 0.095S1 TO-258AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)
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OCR Scan
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PDF
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FRE9160D,
FRE9160R,
FRE9160H
-100V,
095S1
O-258AA
100KRAD
300KRAD
1000KRAD
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MG30D1ZM1
Abstract: Mosfet 30A 250V X10V
Text: GTR MODULE SILICON N CHANNEL MOS TYPE MG30D1ZM1 HIGH POWER S WITCHING APPLICATIONS. M OTOR CONTROL APPLICATIONS. . The Drain is Isolated from Case. . Power MOSFET and 2 Free Wheeling Diodes are Built-in to 1 Package. . Low Drain-Source ON Resistance. : RDS ON =0-125n(Max.)(Iß=30A)
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OCR Scan
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PDF
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MG30D1ZM1
0-125n
MG30D1ZM1
Mosfet 30A 250V
X10V
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI Nch POWER MOSFET I I FS30KMH-06 | HIGH-SPEED SWITCHING USE FS30KMH-06 OUTLINE DRAWING Dimensions in mm 10 ±0.3 2.8 ±0.2 • 2.5V DRIVE • V d s s . • rDS ON (MAX) .
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OCR Scan
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PDF
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FS30KMH-06
30mi2
O-220FN
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Untitled
Abstract: No abstract text available
Text: APT5010JVRU2 A dvanced P o w er Te c h n o l o g y 500V 44A 0.100Q POWER MOSV Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™
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OCR Scan
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PDF
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APT5010JVRU2
OT-227
OT-227
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Untitled
Abstract: No abstract text available
Text: APT5010JVRU3 A dvanced P o w er Te c h n o l o g y 500V 44A 0.100n POWER MOSV Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™
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OCR Scan
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PDF
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APT5010JVRU3
OT-227
OT-227
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STTB3006P
Abstract: mosfet 1200V 30a smps
Text: T S G S -T H O M S O N ^ 7 # M C ^ < m iO T s M K fZ S T T B 3 0 0 6 P(I TURBOSWITCH ”B”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS I f (a v ) 30A V rrm 600V (typ) 60ns (max) 1.3V tr r Vf PRELIMINARY DATA FEATURES AND BENEFITS
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OCR Scan
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PDF
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HV400CP
Abstract: diode sy 171 10 HV400IP HV400CB diode sy 171 N and P MOSFET
Text: H V 400 H A R R IS PRELIMINARY May 1991 High Speed MOSFET Driver Description Features • Fast Fall T i m a s .22 n s 1 0 ,0 0 0 p F • No S u p p ly C u rre n t In Q u ie s c e n t S ta te • Peak O u tp u t S o u rc e C u r r e n t. 6A
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OCR Scan
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PDF
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HV400
000pF
HV400CP
diode sy 171 10
HV400IP
HV400CB
diode sy 171
N and P MOSFET
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APT5012JNU3
Abstract: No abstract text available
Text: A dvanced P o w er Te c h n o l o g y ' -O A APT5012JNU3 500V 43A 0.12Í2 ISOTOP* POWER MOS IVe N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS 'd I I DM’ IM V GS PD t j -t s i g All Ratings: = 2 5 °C unless otherwise specified.
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OCR Scan
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PDF
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APT5012JNU3
5012JNU3
OT-227
APT5012JNU3
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