hfp10n60s
Abstract: No abstract text available
Text: BVDSS = 600 V RDS on typ = 0.67 Ω HFP10N60S ID = 9.5 A 600V N-Channel MOSFET TO-220 FEATURES q Originative New Design 1 q Superior Avalanche Rugged Technology q Robust Gate Oxide Technology 2 3 1.Gate 2. Drain 3. Source q Very Low Intrinsic Capacitances
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PDF
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HFP10N60S
O-220
54typ
hfp10n60s
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HTGB
Abstract: HFP10N60 JESD22-A101 JESD22-A102 JESD22-A103 JESD22-A108
Text: BVDSS = 600 V RDS on typ = 0.64 Ω HFP10N60 ID = 9.5 A 600V N-Channel MOSFET TO-220 FEATURES 1 2 3 Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics
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Original
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PDF
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HFP10N60
O-220
JESD22-A103,
168hrs
300hrs
JESD22-A104,
100cycles
200cycles
HTGB
HFP10N60
JESD22-A101
JESD22-A102
JESD22-A103
JESD22-A108
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HFP10N60
Abstract: No abstract text available
Text: BVDSS = 600 V RDS on typ = 0.64 Ω HFP10N60 ID = 9.5 A 600V N-Channel MOSFET TO-220 FEATURES Originative New Design 1 Superior Avalanche Rugged Technology Robust Gate Oxide Technology 2 3 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances
|
Original
|
PDF
|
HFP10N60
O-220
54typ
HFP10N60
|