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    HFW640

    Abstract: HFI640
    Text: BVDSS = 200 V RDS on typ = 0.145Ω HFW640 / HFI640 ID = 18 A 200V N-Channel MOSFET D2-PAK I2-PAK 2 FEATURES 1 1 3  Originative New Design 2 3 HFW640  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology HFI640 1.Gate 2. Drain 3. Source


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