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    HF SSB APPLICATIONS RF Search Results

    HF SSB APPLICATIONS RF Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    LBAA0QB1SJ-295 Murata Manufacturing Co Ltd SX1262 MODULE WITH OPEN MCU Visit Murata Manufacturing Co Ltd
    GRM-KIT-OVER100-DE-D Murata Manufacturing Co Ltd 0805-1210 over100uF Cap Kit Visit Murata Manufacturing Co Ltd
    LBUA5QJ2AB-828 Murata Manufacturing Co Ltd QORVO UWB MODULE Visit Murata Manufacturing Co Ltd
    LXMSJZNCMH-225 Murata Manufacturing Co Ltd Ultra small RAIN RFID chip tag Visit Murata Manufacturing Co Ltd
    LXMS21NCMH-230 Murata Manufacturing Co Ltd Ultra small RAIN RFID chip tag Visit Murata Manufacturing Co Ltd

    HF SSB APPLICATIONS RF Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TH562

    Abstract: TORIOD SD1731 th562 c ferrite core transformer pin connection IE transformer core 47UF63V
    Text: SD1731 TH562 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS . . . . OPTIMIZED FOR SSB 30 MHz 50 VOLTS EFFICIENCY 40% COMMON EMITTER GOLD METALLIZATION POUT = 220 W PEP WITH 13 dB GAIN .500 4LFL (M174) epoxy sealed ORDER CODE SD1731 BRANDING TH562 PIN CONNECTION


    Original     		PDF SD1731 TH562) TH562 SD1731 TH562 TORIOD th562 c ferrite core transformer pin connection IE transformer core 47UF63V

    4C6 ferrite

    Abstract: ferrite core 4c6 ferrite core transformer pin connection ST448 4C6 SPECIFICATIONS SD1731 datasheet TORIOD SD1731 SD1731-14 ssb transformer
    Text: SD1731-14 ST448 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS . . . . PRELIMINARY DATA OPTIMIZED FOR SSB 30 MHz 50 VOLTS EFFICIENCY 40% COMMON EMITTER GOLD METALLIZATION POUT = 250 W PEP WITH 12 dB GAIN .500 4LFL (M174) epoxy sealed ORDER CODE SD1731-14


    Original     		PDF SD1731-14 ST448) ST448 SD1731 4C6 ferrite ferrite core 4c6 ferrite core transformer pin connection ST448 4C6 SPECIFICATIONS SD1731 datasheet TORIOD SD1731-14 ssb transformer

    TH513

    Abstract: HF SSB APPLICATIONS SD1733 M135
    Text: SD1733 TH513 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS . . . OPTIMIZED FOR SSB 30 MHz 50 VOLTS COMMON EMITTER GOLD METALLIZATION P OUT = 75 W MIN. WITH 14.0 dB GAIN .380 4L STUD (M135) epoxy sealed ORDER CODE SD1733 BRANDING TH513 PIN CONNECTION


    Original     		PDF SD1733 TH513) TH513 SD1733 TH513 HF SSB APPLICATIONS M135

    SD1730

    Abstract: Planar choke TH560 choke C20 C24
    Text: SD1730 TH560 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS . . . . OPTIMIZED FOR SSB 30 MHz 28 VOLTS IMD −30dB EFFICIENCY 40% COMMON EMITTER GOLD METALLIZATION POUT = 220 W PEP WITH 12 dB GAIN .500 4 LFL (M174) epoxy sealed ORDER CODE SD1730 BRANDING


    Original     		PDF SD1730 TH560) -30dB TH560 SD1730 35ise Planar choke TH560 choke C20 C24

    th513

    Abstract: Planar choke M135 SD1733 ssb transistors
    Text: SD1733 TH513 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS . . . OPTIMIZED FOR SSB 30 MHz 50 VOLTS COMMON EMITTER GOLD METALLIZATION POUT = 75 W MIN. WITH 14.0 dB GAIN .380 4L STUD (M135) epoxy sealed ORDER CODE SD1733 BRANDING TH513 PIN CONNECTION DESCRIPTION


    Original     		PDF SD1733 TH513) TH513 SD1733 th513 Planar choke M135 ssb transistors

    Untitled

    Abstract: No abstract text available
    Text: MS1007 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS Features 30 MHz 50 VOLTS POUT = 150 WATTS GP = 14 dB MINIMUM COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1007 is a 50V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device


    Original     		PDF MS1007 MS1007 150WPEP 000MHz 001MHz 100mA

    arco

    Abstract: THX15 M164 SD1727 Arco 426 arco 427 1nF 63V 5 2.5mm
    Text: SD1727 THX15 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS . . . . OPTIMIZED FOR SSB 30 MHz 50 VOLTS IMD −30 dB COMMON EMITTER GOLD METALLIZATION POUT = 150 W PEP MIN. WITH 14 dB GAIN .500 4LFL (M164) epoxy sealed ORDER CODE SD1727 BRANDING THX15 PIN CONNECTION


    Original     		PDF SD1727 THX15) THX15 SD1727 arco THX15 M164 Arco 426 arco 427 1nF 63V 5 2.5mm

    choke coil

    Abstract: SD1729 TH416
    Text: SD1729 TH416 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS . . . . OPTIMIZED FOR SSB 30 MHz 28 VOLTS IMD −30 dB COMMON EMITTER GOLD METALLIZATION POUT = 130 W PEP WITH 12 dB GAIN .500 4LFL (M174) epoxy sealed ORDER CODE SD1729 BRANDING TH416 PIN CONNECTION


    Original     		PDF SD1729 TH416) TH416 SD1729 choke coil TH416

    TH562

    Abstract: th562 c 4C6 ferrite SD1731 ferrite core transformer pin connection 4C6 SPECIFICATIONS
    Text: SD1731 TH562 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS . . . . OPTIMIZED FOR SSB 30 MHz 50 VOLTS EFFICIENCY 40% COMMON EMITTER GOLD METALLIZATION POUT = 220 W PEP WITH 13 dB GAIN .500 4LFL (M174) epoxy sealed ORDER CO DE SD1731 BRANDING TH562 PIN CONNECTION


    Original     		PDF SD1731 TH562) TH562 SD1731 TH562 th562 c 4C6 ferrite ferrite core transformer pin connection 4C6 SPECIFICATIONS

    MS1226

    Abstract: No abstract text available
    Text: MS1226 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS Features 30 MHz 28 VOLTS IMD = -28 dB POUT = 30 WATTS GP = 18 dB MINIMUM COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1226 is a 28V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device


    Original     		PDF MS1226 MS1226

    Untitled

    Abstract: No abstract text available
    Text: MS1226 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS Features 30 MHz 28 VOLTS IMD = -28 dB POUT = 30 WATTS GP = 18 dB MINIMUM COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1226 is a 28V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device


    Original     		PDF MS1226 MS1226 RTH00

    SD1729

    Abstract: TH416 88nF
    Text: SD1729 TH416 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS . . . . OPTIMIZED FOR SSB 30 MHz 28 VOLTS IMD −30 dB COMMON EMITTER GOLD METALLIZATION P OUT = 130 W PEP WITH 12 dB GAIN .500 4LFL (M174) epoxy sealed ORDER CODE SD1729 BRANDING TH416 PIN CONNECTION


    Original     		PDF SD1729 TH416) TH416 SD1729 TH416 88nF

    SD1730

    Abstract: TH560 arco
    Text: SD1730 TH560 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS . . . . OPTIMIZED FOR SSB 30 MHz 28 VOLTS IMD −30dB EFFICIENCY 40% COMMON EMITTER GOLD METALLIZATION P OUT = 220 W PEP WITH 12 dB GAIN .500 4 LFL (M174) epoxy sealed ORDER CODE SD1730 BRANDING


    Original     		PDF SD1730 TH560) -30dB TH560 SD1730 TH560 arco

    Untitled

    Abstract: No abstract text available
    Text: MS1004 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS Features 30 MHz 50 VOLTS POUT = 250 WATTS GP = 14.5 dB MINIMUM IMD = -30 dB GOLD METALIZATION COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1004 is a 50V epitaxial silicon NPN planar transistor designed primarily for SSB and VHF communications.


    Original     		PDF MS1004 MS1004 30MHz

    Untitled

    Abstract: No abstract text available
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS1077 RF AND MICROWAVE TRANSISTORS HF SSB APPLICATIONS Features • • • • • • • • Optimized for SSB 30 MHz 28 Volts IMD –30dB Common Emitter Gold Metallization


    Original     		PDF MS1077 MS1077

    HF SSB APPLICATIONS

    Abstract: MS1078
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS1078 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS Features • • • • • • • • Optimized for SSB 30 MHz 28 Volts IMD –30dB Common Emitter Gold Metallization


    Original     		PDF MS1078 MS1078 HF SSB APPLICATIONS

    TH430

    Abstract: arco 429 diode gp 429 SD1728 M177 TRANSISTOR AS PLANAR PEP 470uf 40v arco 427 SD1728 M177 th430 e
    Text: SD1728 TH430 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS . . . . OPTIMIZED FOR SSB 30 MHz 50 VOLTS IMD − 30 dB GOLD METALLIZATION COMMON EMITTER P OUT = 250 W PEP WITH 14.5 dB GAIN .550 4LFL (M177) epoxy sealed ORDER CODE SD1728 BRANDING TH430 PIN CONNECTION


    Original     		PDF SD1728 TH430) TH430 SD1728 TH430 arco 429 diode gp 429 M177 TRANSISTOR AS PLANAR PEP 470uf 40v arco 427 SD1728 M177 th430 e

    HF SSB APPLICATIONS RF 28 v

    Abstract: j192
    Text: MS1076 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS Features 30 MHz 28 VOLTS GOLD METALLIZATION POUT = 220 W PEP GP = 12 dB GAIN MINIMUM COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1076 is a 28 volt epitaxial NPN silicon planar transistor designed primarily for SSB and VHF communications. This


    Original     		PDF MS1076 MS1076 HF SSB APPLICATIONS RF 28 v j192

    Untitled

    Abstract: No abstract text available
    Text: SD1726 THA15 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS FEATURES • OPTIMIZED FOR SSB • 30 MHz • 50 V • IMD-30 dB • COMMON EMITTER • GOLD METALLIZATION M174 epoxy sealed • POUT = 150 W PEP MIN. WITH 14 dB GAIN ORDER CODE SD1726 DESCRIPTION


    Original     		PDF SD1726 THA15) IMD-30 SD1726 THA15

    SD1726

    Abstract: THA15 OF IC 318 556 b
    Text: SD1726 THA15 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS FEATURES • OPTIMIZED FOR SSB • 30 MHz • 50 V • IMD-30 dB • COMMON EMITTER • GOLD METALLIZATION M174 epoxy sealed • POUT = 150 W PEP MIN. WITH 14 dB GAIN ORDER CODE SD1726 DESCRIPTION


    Original     		PDF SD1726 THA15) IMD-30 SD1726 THA15 THA15 OF IC 318 556 b

    MS1011

    Abstract: No abstract text available
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS1011 RF AND MICROWAVE TRANSISTORS HF SSB APPLICATIONS Features • • • • • • • OPTIMIZED FOR SSB 30 MHz 50 VOLTS IMD — 30 dB GOLD METALLIZATION COMMON EMITTER


    Original     		PDF MS1011 MS1011

    Untitled

    Abstract: No abstract text available
    Text: SGS-THOMSON 5 i. SD1731-14 ST448 •ILO RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS PRELIMINARY DATA OPTIMIZED FOR SSB 30 MHz 50 VOLTS EFFICIENCY 40% COMMON EMITTER GOLD METALLIZATION P o u t = 250 W PEP WITH 12 dB GAIN .500 4LFL (M 174) epoxy sealed


    OCR Scan     		PDF SD1731-14 ST448) SD1731 ST448 0D77b3b

    FLS2- transistor

    Abstract: No abstract text available
    Text: r i 7 ^ 7# . S G S - T H O M S O N M M » [ IC T [ » ! ] [ 1 §_ S D 1728 (T H 4 30 RF & MICROWAVE TRANSISTORS _ HF SSB APPLICATIONS • OPTIMIZED FOR SSB . 30 MHz . 50 VOLTS > IMD - 30 dB ■ GOLD METALLIZATION . COMMON EMITTER


    OCR Scan     		PDF SD1728 TH430 SD1728 FLS2- transistor

    Untitled

    Abstract: No abstract text available
    Text: SGS-THOMSON SD1729 TH416 IILG RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS . OPTIMIZED FOR SSB . 30 MHz . 28 VOLTS • IMD -3 0 dB . COMMON EMITTER . GOLD METALLIZATION ■ P o u t = 130 W P E P WITH 12 dB GAIN DESCRIPTION The SD1729 is a Class AB 28 V epitaxial silicon


    OCR Scan     		PDF SD1729 TH416) SD1729 D070704