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    HF POWER AMPLIFIERS 2-30 MHZ Search Results

    HF POWER AMPLIFIERS 2-30 MHZ Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation

    HF POWER AMPLIFIERS 2-30 MHZ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    4c6 toroids

    Abstract: Design of H.F. Wideband Power Transformers Philips Application Note ECO6907 4C6 toroid AN98030 2222 632 BLW96 ECO6907 BLW50F blw96 equivalent
    Text: APPLICATION NOTE Two-stage wideband HF linear amplifier for 400 W PEP using BLW96 and BLW50F AN98030 Philips Semiconductors Two-stage wideband HF linear amplifier for 400 W PEP using BLW96 and BLW50F Application note AN98030 CONTENTS 1 PART 1 SINGLE-STAGE WIDEBAND 1.6 − 30 MHz LINEAR AMPLIFIER FOR 400 W PEP USING TWO BLW96


    Original     		PDF BLW96 BLW50F AN98030 BLW96 4c6 toroids Design of H.F. Wideband Power Transformers Philips Application Note ECO6907 4C6 toroid AN98030 2222 632 ECO6907 BLW50F blw96 equivalent

    1gw 82

    Abstract: PBTC-1GW BL301 K558 Y460 ZNBT-60-1W
    Text: BIAS-TEES Surface Mount ❏ 50Ω HIGH CURRENT 100 kHz to 6000 MHz JEBT FREQ. RANGE MHz MODEL NO. fL-f U ISOLATION* (dB) (RF-DC, RF&DC-DC) INSERTION LOSS* (dB) L Typ. Max. M Typ. Max. U Typ. Max. L Typ. Min. M Typ. Min. PRICE $ Note B C O N N E C T I O N


    Original     		PDF BL301 1gw 82 PBTC-1GW BL301 K558 Y460 ZNBT-60-1W

    1gw 75

    Abstract: JEBT-6G
    Text: BIAS-TEES Surface Mount ❏ 50Ω HIGH CURRENT 100 kHz to 6000 MHz JEBT MODEL NO. FREQ. RANGE MHz fL-fU ISOLATION* (dB) (RF-DC, RF&DC-DC) INSERTION LOSS* (dB) L Typ. Max. M Typ. Max. U Typ. Max. L Typ. Min. M Typ. Min. PRICE $ Note B C O N N E C T I O N


    Original     		PDF BL301 BL301 1gw 75 JEBT-6G

    Untitled

    Abstract: No abstract text available
    Text: BIAS-TEES Surface Mount ❏ 50Ω HIGH CURRENT 100 kHz to 6000 MHz JEBT MODEL NO. FREQ. RANGE MHz fL-fU ISOLATION* (dB) (RF-DC, RF&DC-DC) INSERTION LOSS* (dB) L Typ. Max. M Typ. Max. U Typ. Max. L Typ. Min. M Typ. Min. PRICE $ Note B C O N N E C T I O N


    Original     		PDF BL301 BL301

    BL301

    Abstract: K558 Y460 ZNBT-60-1W
    Text: BIAS-TEES Surface Mount ❏ 50Ω HIGH CURRENT 100 kHz to 6000 MHz JEBT FREQ. RANGE MHz MODEL NO. fL-fU ISOLATION* (dB) (RF-DC, RF&DC-DC) INSERTION LOSS* (dB) L Typ. Max. M Typ. Max. U Typ. Max. L Typ. Min. M Typ. Min. PRICE $ Note B C O N N E C T I O N


    Original     		PDF BL301 BL301 K558 Y460 ZNBT-60-1W

    BL301

    Abstract: K558 Y460 ZNBT-60-1W DSA0036977
    Text: BIAS-TEES Surface Mount ❏ 50Ω HIGH CURRENT 100 kHz to 6000 MHz JEBT MODEL NO. FREQ. RANGE MHz fL-fU ISOLATION* (dB) (RF-DC, RF&DC-DC) INSERTION LOSS* (dB) L Typ. Max. M Typ. Max. U Typ. Max. L Typ. Min. M Typ. Min. PRICE $ Note B C O N N E C T I O N


    Original     		PDF BL301 BL301 K558 Y460 ZNBT-60-1W DSA0036977

    RFDC

    Abstract: No abstract text available
    Text: BIAS-TEES Surface Mount ❏ 50Ω HIGH CURRENT 100 kHz to 6000 MHz JEBT MODEL NO. JEBT-4R2G JEBT-4R2GW NEW TCBT-2R5G NEW TCBT-6G Note B C O N N E C T I O N — — — — — — BL301 BL301 hr hr 39.95 59.95 1.05 1.2 1.1 1.3 1.1 1.2 1.2 2.2 GU1041 GU1041


    Original     		PDF BL301 BL301 TB-268 RFDC

    Untitled

    Abstract: No abstract text available
    Text: BIAS-TEES 50Ω Surface Mount o HIGH CURRENT 100 kHz to 6000 MHz JEBT MODEL NO. fL-fU CAPD DATA ISOLATION*, dB INSERTION LOSS*, dB FREQ. RANGE MHz Note B C O N N E C T I O N BL301 BL301 hr hr 39.95 59.95 BL301 BL301 hr hr 59.95 69.95 CASE STYLE RF-DC, RF&DC-DC


    Original     		PDF BL301 BL301

    K18 diodes

    Abstract: TB268
    Text: BIAS-TEES Surface Mount ❏ 50Ω HIGH CURRENT 100 kHz to 6000 MHz JEBT MODEL NO. JEBT-4R2G JEBT-4R2GW NEW TCBT-2R5G NEW TCBT-6G INSERTION LOSS* dB ISOLATION* (dB) (RF port to DC port) (RF&DC port to DC port) VSWR* (:1) L M U Typ. Max. Typ. Max. Typ. Max.


    Original     		PDF BL301 BL301 TB-268 K18 diodes TB268

    Untitled

    Abstract: No abstract text available
    Text: BIAS-TEES Surface Mount o 50Ω HIGH CURRENT 100 kHz to 6000 MHz JEBT MODEL NO. JEBT-4R2G JEBT-4R2GW 10-4200 0.1-4200 NEW TCBT-2R5G NEW TCBT-6G 20-2500 50-6000 Note B C O N N E C T I O N 1.2 1.2 0.6 0.6 1.6 1.6 32 25 20 15 40 40 20 20 40 40 20 20 — — —


    Original     		PDF BL301 BL301 TB-268

    Untitled

    Abstract: No abstract text available
    Text: BIAS-TEES HIGH CURRENT 50Ω Surface Mount o 100 kHz to 6000 MHz JEBT MODEL NO. fL-fU ISOLATION*, dB CAPD DATA CASE STYLE RF-DC, RF&DC-DC (see RF/IF Designer handbook) Page Note B C O N N E C T I O N INSERTION LOSS*, dB FREQ. RANGE MHz L M U L M U Typ. Max.


    Original     		PDF BL301 BL301

    GU1041

    Abstract: 1gW 38
    Text: BIAS-TEES Surface Mount ❏ 50Ω HIGH CURRENT 100 kHz to 6000 MHz JEBT MODEL NO. JEBT-4R2G JEBT-4R2GW NEW TCBT-2R5G NEW TCBT-6G INSERTION LOSS* dB ISOLATION* (dB) (RF port to DC port) (RF&DC port to DC port) VSWR* (:1) L M U Typ. Max. Typ. Max. Typ. Max.


    Original     		PDF BL301 BL301 TB-268 GU1041 1gW 38

    Untitled

    Abstract: No abstract text available
    Text: BIAS-TEES Surface Mount ❏ 50Ω HIGH CURRENT 100 kHz to 6000 MHz JEBT MODEL NO. JEBT-4R2G JEBT-4R2GW NEW TCBT-2R5G NEW TCBT-6G INSERTION LOSS* dB ISOLATION* (dB) (RF port to DC port) (RF&DC port to DC port) VSWR* (:1) L M U Typ. Max. Typ. Max. Typ. Max.


    Original     		PDF BL301 BL301 TB-268

    philips ferroxcube 4c6

    Abstract: philips toroid 4c6 ferroxcube 4C6 toroid core 4C6 toroid AN98032 Philips Application Note ECO6907 electrosil HF power amplifier blf177 4C6 ferrite power combiner toroid
    Text: APPLICATION NOTE Combining units for a 1 kW wideband HF amplifier AN98032 Philips Semiconductors Combining units for a 1 kW wideband HF amplifier CONTENTS 1 SUMMARY 2 INTRODUCTION 3 CIRCUIT DESCRIPTION 3.1 3.2 The input power divider The output power combiner


    Original     		PDF AN98032 SCA57 philips ferroxcube 4c6 philips toroid 4c6 ferroxcube 4C6 toroid core 4C6 toroid AN98032 Philips Application Note ECO6907 electrosil HF power amplifier blf177 4C6 ferrite power combiner toroid

    s175-50

    Abstract: No abstract text available
    Text: S175 - 50 175 Watts, 50 Volts, Class AB Milcom 1.5 - 30 MHz CASE OUTLINE GENERAL DESCRIPTION 55HX, Style 2 The S175-50 is a 50 Volt, COMMN EMITTER device designed for Class A, AB or C operation in the HF/VHF frequency bands. Its high collector voltage simplifies the design of wideband, SSB linear amplifiers. The transistor chip is


    Original     		PDF S175-50 S175-50

    w56 transistor

    Abstract: SN74ALS235
    Text: SN74ALS235 64 x 5 ASYNCHRONOUS FIRSTĆIN, FIRSTĆOUT MEMORY SDAS108A − OCTOBER 1986 − REVISED SEPTEMBER 1993 D D D D D DW OR N PACKAGE TOP VIEW Asynchronous Operation Organized as 64 Words by 5 Bits Data Rates From 0 to 25 MHz 3-State Outputs Package Options Include Plastic


    Original     		PDF SN74ALS235 SDAS108A 300-mil SN74ALS235 320-bit w56 transistor

    R142.016.000 W

    Abstract: No abstract text available
    Text: B ias-T ees 50Q Surface Mount12 High Curren t TOO kHz to 6000 MHz JEBT MODEL NO. FREQ. RANGE MHz ISOLATION* „ • (dB) (RF-bC, RF&DC-DC) INSERTION LOSS* (dB) M U Typ. M ax. Typ. M ax. Typ. Max. 0.6 0.7 1.2 1.4 0.6 1.3 0.6 0.7 1.2 1.4 0.6 1.3 JEBT-4R2G


    OCR Scan     		PDF BL301 BL301 R142.016.000 W

    1gw 75

    Abstract: HF 4093 N
    Text: Bias-Tee □ Mini-Circuits ZFBT ZFBT-FT 0.1 to 6000 MHz case style selection outline drawings see Table of Contents PBTC FREQ. MHz L MODEL NO. ZFBT-4R2G ZFBT-4R2G-FT ZFBT-6G ZFBT-6G-FT •fr ZFBT-4R2GW <• ZFBT-4R2GW-FT ■fr ZFBT-6GW 4- ZFBT-6GW-FT PBTC-1G


    OCR Scan     		PDF 100mA 150mA 200mA 1gw 75 HF 4093 N

    RCA 40411 transistor

    Abstract: audio amplifier with rca 40411 transistor RCA 383 rca 40411 40411 transistor RCA Power Transistor 40411 RCA 40250 RCA 40250 transistor Transistor rca 40250 RCA transistor 40411
    Text: HIGH-SPEED SWITCHING N-P-N & P-N-P POWER TYPES fT to 250 MHz . . . Ir to 60 A . . . P r to 140 W ic • 1 A HIM. P f ■ 5 W max. TO-39 * le * - 1 A MX. P j « 7 W max. (T O - » ) • ic ■ 2 A max. P j “ 10 f t max. (TO-39) ft 30 x 30* 30x30 2N2102 (N-P-N]


    OCR Scan     		PDF ITO-391 Pt-85-117 80-12SW 30x30 42x42 103x103 RCA 40411 transistor audio amplifier with rca 40411 transistor RCA 383 rca 40411 40411 transistor RCA Power Transistor 40411 RCA 40250 RCA 40250 transistor Transistor rca 40250 RCA transistor 40411

    40375

    Abstract: 40411 2n377 2N2102 2N3879 2N4036 2N5320 2N5322 2N6178 2N6180
    Text: HIGH-SPEED SWITCHING N-P-N & P-N-P POWER TY PES fT to 250 MHz . . . I r to 60 A . . . P r to 140 W ic • 1 A HIM. P f ■ 5 W m ax. T O - 3 9 * le * - 1 A MX. P j « 7 W m ax. (T O - » ) • ic ■ 2 A m ax. P j “ 10 f t max. (TO -39) ft 30 x 30* 3 0 x3 0


    OCR Scan     		PDF ITO-391 Pt-85-117 80-12SW 30x30 42x42 103x103 40375 40411 2n377 2N2102 2N3879 2N4036 2N5320 2N5322 2N6178 2N6180

    complement of 2N3053

    Abstract: 2N3283 npn 40411 2N3773 regulator 40411 2n377 40375 40852 coil 2N3053 2N2102
    Text: HIGH-SPEED SWITCHING N-P-N & P-N-P POWER TY PES fT to 250 MHz . . . Ir to 60 A . . . Pr to 140 W ic • 1 A HIM. P f ■ 5 W m ax. T O - 3 9 * le * - 1 A MX. P j « 7 W m ax. (T O - » ) • ic ■ 2 A m ax. P j “ 10 f t max. (TO -39) ft 30 x 30* 3 0 x3 0


    OCR Scan     		PDF ITO-391 Pt-85-117 80-12SW 30x30 42x42 103x103 complement of 2N3053 2N3283 npn 40411 2N3773 regulator 40411 2n377 40375 40852 coil 2N3053 2N2102

    LC 7995

    Abstract: No abstract text available
    Text: Bias-Tees 50 Q Surface MountJ High Current 100 kHz to6000 MHz JEBT INSERTION LOSS*, dB FREQ. RANGE MHz MODEL NO. H CASE STYLE ISOLATION*, C» RF-DC, RF&DC-DC L M u L M u Typ. Max. Typ. Max. Typ. M ax. iy p . Min. Typ. Min. Typ . Min. Note B JEBT-4R2G JEBT-6G


    OCR Scan     		PDF to6000 BL301 LC 7995

    Untitled

    Abstract: No abstract text available
    Text: M ITSUBISHI SOUND PR O CESSO R ICs M51567P PREAMPLIFIER FOR OPTICAL PICKUP DESCRIPTION The M 51567P is an optical pickup preamplifier for CD players. It has a built-in l-V amplifiers that convert current signals gained by photodetectors into voltage signals and


    OCR Scan     		PDF M51567P 51567P 51564P M51564P M50422P

    Untitled

    Abstract: No abstract text available
    Text: S IE M E N S BFQ 193 NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • fT = 7.5 GHz F= 1.3 dB at 900 MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! 1 =B II


    OCR Scan     		PDF Q62702-F1312 OT-89 IS21el2 fl235b05 0122D22 0535bD5 D12E0E3