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    HE8051S

    Abstract: HE8551S
    Text: HI-SINCERITY Spec. No. : HE6119 Issued Date : 1992.11.25 Revised Date : 2004.07.26 Page No. : 1/5 MICROELECTRONICS CORP. HE8551S PNP EPITAXIAL PLANAR TRANSISTOR Description The HE8551S is designed for general purpose amplifier applications. Features • High DC Current gain: 100-400 at IC=150mA


    Original     		HE6119 HE8551S HE8551S 150mA HE8051S 183oC 217oC 260oC HE8051S PDF

    HE8051S

    Abstract: HE8551S
    Text: HI-SINCERITY Spec. No. : HE6119 Issued Date : 1992.11.25 Revised Date : 2001.07.19 Page No. : 1/4 MICROELECTRONICS CORP. HE8551S PNP EPITAXIAL PLANAR TRANSISTOR Description The HE8551S is designed for general purpose amplifier applications. Features • High DC Current gain: 100-400 at IC=150mA


    Original     		HE6119 HE8551S HE8551S 150mA HE8051S HE8051S PDF