x050
Abstract: MIL-PRF-123
Text: STANDARD SMT CHIP P/N BREAKDOWN 1206 N 472 J 101 N X050 H T M - HB Marking Case Size M = Marked None = Unmarked Marking not available on sizes 0603 and below Dielectric Code Code EIA Class Packaging N B X Y COG/NP0 X7R BX Y5V Ultra Stable Stable MIL General Purpose
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Tin/10
11-08-PC
x050
MIL-PRF-123
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f540ns
Abstract: active brake mosfet switch BLDC Motor
Text: Application Note 1829 Author: Richard Garcia HIP4086 3-phase BLDC Motor Drive Demonstration Board, User’s Guide Introduction analog signal proportional to the motor current is available on board as a design reference. The HIP4086DEMO1Z is a general purpose 3-phase BLDC
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HIP4086
HIP4086DEMO1Z
AN1829
f540ns
active brake mosfet switch BLDC Motor
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CLA 80 E 1200
Abstract: VG2B
Text: CLA 30 E 1200 HB V RRM = I T AV M = I T(RMS) = High Efficiency Thyristor Single Thyristor 1200 V 30 A 47 A Part number 2 CLA 30 E 1200 HB 1 3 Backside: anode Features / Advantages: Applications: Package: ● Thyristor for line frequency ● Planar passivated chip
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O-247
60747and
20110209d
CLA 80 E 1200
VG2B
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TEA1713
Abstract: 6NK60 04N60C3 equivalent bs170 replacement 04n60c3 04n60c3 replacement TEA1523 diode zd201 KD366 k3934
Text: AN10881 TEA1713 resonant power supply control IC with PFC Rev. 01 — 22 March 2010 Application note Document information Info Content Keywords TEA1713, PFC, burst mode, adapter, LCD TV, Plasma TV, resonant, converter. Abstract The TEA1713 integrates a controller for Power Factor Correction PFC
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AN10881
TEA1713
TEA1713,
AN10881
6NK60
04N60C3 equivalent
bs170 replacement
04n60c3
04n60c3 replacement
TEA1523
diode zd201
KD366
k3934
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cla30e1200pb
Abstract: No abstract text available
Text: CLA 30 E 1200 HB V RRM = I T AV M = I T(RMS) = High Efficiency Thyristor Single Thyristor 1200 V 30 A 47 A Part number 2 CLA 30 E 1200 HB 1 3 Backside: anode Features / Advantages: Applications: Package: ● Thyristor for line frequency ● Planar passivated chip
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O-247
60747and
20110209d
cla30e1200pb
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DOD-A-82720
Abstract: FR4 epoxy dielectric constant 4.2 DP-190 DP-100 Plus DP270 DP460 DP-420 3M DP100
Text: 0362220 Epoxy-Hotmelt 3/30/04 11:29 AM Page 1 High-performance adhesives for demanding electronics applications. With the ever-increasing sophistication of electronics, you need the most dependable and versatile methods for their fabrication and assembly. 3M Scotch-Weld epoxies and Jet-melt
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DP-100
DP-125
DP-190
DP-270
DP-420
DP-460
DOD-A-82720
FR4 epoxy dielectric constant 4.2
DP-100 Plus
DP270
DP460
3M DP100
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Untitled
Abstract: No abstract text available
Text: CERAMIC CHIP CAPACITORS INTRODUCTION Ceramic chips consist of formulated ceramic dielectric materials which have been fabricated into thin layers, interspersed with metal electrodes alternately exposed on opposite edges of the laminated structure. The entire structure is then fired at high temperature to
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EIA-198
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F-2100
Abstract: F-2102 F-2103 F-2105
Text: CERAMIC CHIP CAPACITORS INTRODUCTION Significant Figure of Temperature Coefficient Working Voltage: Refers to the maximum continuous DC working voltage permissible across the entire operating temperature range. The reliability of multilayer ceramic capacitors is not extremely sensitive to
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EIA-198
F-2100
F-2102
F-2103
F-2105
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k 629
Abstract: F-2100 F-2102 F-2103 F-2105 MLCC rework F2110
Text: CERAMIC CHIP CAPACITORS INTRODUCTION Significant Figure of Temperature Coefficient Working Voltage: Refers to the maximum continuous DC working voltage permissible across the entire operating temperature range. The reliability of multilayer ceramic capacitors is not extremely sensitive to
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EIA-198
k 629
F-2100
F-2102
F-2103
F-2105
MLCC rework
F2110
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Untitled
Abstract: No abstract text available
Text: RF3230 QUAD-BAND GMSK TXM, 2 UMTS SWITCH PORTS GND GND GND GND GND GND HB RFIN 1 GND Package Style: Module, 7.00mmx6.00mmx1.00mm 30 29 28 27 26 25 24 GND 2 Applications Battery Powered 3G Handsets GSM850/EGSM900/DCS/
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RF3230
00mmx6
00mmx1
GSM850
EGSM900
DCS1800
PCS1900
RF3230TR13
RF3230TR7
EIA-481.
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smd diode HB
Abstract: BA891 CGY2014ATW HTSSOP20 philips application
Text: INTEGRATED CIRCUITS DATA SHEET CGY2014ATW GSM/DCS/PCS power amplifier Preliminary specification File under Integrated Circuits, IC17 2000 Nov 28 Philips Semiconductors Preliminary specification GSM/DCS/PCS power amplifier CGY2014ATW FEATURES GENERAL DESCRIPTION
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CGY2014ATW
CGY2014ATW
403506/01/pp12
smd diode HB
BA891
HTSSOP20
philips application
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Untitled
Abstract: No abstract text available
Text: SC321 1.0A ( 200V / 1.0A ) Outline drawings, mm FAST RECOVERY DIODE 3±0.2 0.1 2.6±0.2 2.5±0.2 Marking 1.35±0.4 2 MIN. 1.35±0.4 1.2±0.2 +0.4 5.1-0.1 Features Surface mount device High voltage by mesa design Marking High reliability HB Applications Code
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SC321
SC321-2
SC321
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marking code HB
Abstract: Mark 10A
Text: SC321 1.0A ( 200V / 1.0A ) Outline drawings, mm FAST RECOVERY DIODE 3±0.2 0.1 2.6±0.2 2.5±0.2 Marking 1.35±0.4 2 MIN. 1.35±0.4 1.2±0.2 +0.4 5.1-0.1 Features Surface mount device High voltage by mesa design Marking High reliability HB Applications Code
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SC321
SC321-2
SC321
marking code HB
Mark 10A
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Untitled
Abstract: No abstract text available
Text: CERAMIC CHIP CAPACITORS INTRODUCTION Significant Figure of Temperature Coefficient Working Voltage: Refers to the maximum continuous DC working voltage permissible across the entire operating temperature range. The reliability of multilayer ceramic capacitors is not extremely sensitive to
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Untitled
Abstract: No abstract text available
Text: SC321 1.0A ( 200V / 1.0A ) Outline drawings, mm FAST RECOVERY DIODE 3±0.2 0.1 2.6±0.2 2.5±0.2 Marking 1.35±0.4 2 MIN. 1.35±0.4 1.2±0.2 +0.4 5.1-0.1 Features Surface mount device High voltage by mesa design Marking High reliability HB Applications Code
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SC321
SC321-2
SC321
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sha1 hash
Abstract: A999 10K50S-1
Text: HammerCores by Altera White Paper SHA-1 Hash Function Introduction The Hammercores by Altera SHA-1 hash function implements the SHA-1 message-digest algorithm, as described in ® FIPS PUB 180-1, and is optimized for Altera FLEX 10KE and APEX 20K devices.
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160-bit
sha1 hash
A999
10K50S-1
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fca173
Abstract: h2lb FCA175 BA891 CGY2014TT philips rf manual HTSSOP20
Text: INTEGRATED CIRCUITS DATA SHEET CGY2014TT GSM/DCS/PCS power amplifier Product specification Supersedes data of 2000 Apr 11 File under Integrated Circuits, IC17 2000 Oct 16 Philips Semiconductors Product specification GSM/DCS/PCS power amplifier CGY2014TT FEATURES
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CGY2014TT
CGY2014TT
403506/02/pp16
fca173
h2lb
FCA175
BA891
philips rf manual
HTSSOP20
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TVC 2 HB
Abstract: No abstract text available
Text: BX DIELECTRIC BX characteristics are identical to X7R dielectric, with the added restriction that the Temperature-Voltage Coefficient TVC is not to exceed -25% ∆C at rated voltage, over the operating temperature range (-55°C to 125°C). NOVACAP manufactures chips using dielectrics with minimal voltage coefficient and layer thickness designed to meet BX requirements.
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09-08-PC
TVC 2 HB
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RF3230
Abstract: No abstract text available
Text: RF3230 QUAD-BAND GMSK TXM, 2 UMTS SWITCH PORTS GND GND GND GND GND GND HB RFIN 1 GND Package Style: Module, 7.00mmx6.00mmx1.00mm 30 29 28 27 26 25 24 GND 2 22 GND DC Block Features Applications Battery Powered 3G
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RF3230
00mmx6
00mmx1
GSM850/EGSM900/DCS/
EIA-481.
DS110216
RF3230
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3g UMTS signal Schematic Diagram
Abstract: No abstract text available
Text: RF3230 QUAD-BAND GMSK TXM, 2 UMTS SWITCH PORTS GND GND GND GND GND GND HB RFIN 1 GND Package Style: Module, 7.00mmx6.00mmx1.00mm 30 29 28 27 26 25 24 GND 2 Applications Battery Powered 3G Handsets GSM850/EGSM900/DCS/
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RF3230
00mmx6
00mmx1
GSM850
EGSM900
DCS1800
PCS1900
RF3230TR13
RF3230TR7
EIA-481.
3g UMTS signal Schematic Diagram
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M1F60
Abstract: No abstract text available
Text: Rectifier Diode Surface Mounting Device Single Diode •*W fN -äsH OUTLINE DIMENSIONS Package : M1F Unit : mm M 1 F 800V 1A + - — N— 2 .8 101 it V — F t - 9 Cathode mark 45 £1 B64 l!i|P "3 7 ? ° 00 wmm «T 116 2 n y HB-g- W Type No. Date code
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OCR Scan
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PDF
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M1F60
M1F80
50HzJE®
20/im
35/jm
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Untitled
Abstract: No abstract text available
Text: HB 56RW872ES Series 8,388,608-Word x 72-Bit ECC High Density Dynamic RAM Module HITACHI Preliminary Rev. 0 Dec. 19, 1995 The HB56RW872ES belongs to 8 Byte DIMM (Dual In-Line Memory Module) family, and has been developed as an optimized main memory solution for 4 and 8 Byte processor applications.
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56RW872ES
608-Word
72-Bit
HB56RW872ES
16-Mbit
HM51W16400)
16-bit
74LVT16244)
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TA7261P
Abstract: TA7261
Text: TA7261P DC MOTOR DRIVER 2 PHASE Bi-DIRECTIONAL Unit in mm The TA7261P is a 2 Phase Bi-Directional type Motor Driver 1C designed for use Tape Deck, VTR and Micro Floppy Disk Motor Drivers. It contains Output Power Drivers, Position Sensing Amplifiers, Control Amplifier and Voltage Regulator
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TA7261P
TA7261P
200mV
TA7261
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M52777SP
Abstract: M54630P M38881M2 m59320 57704L M38173M6 SF15DXZ M34236 m37204m8 54630p
Text: REFERENCE LIST T ype Page 2 S A 1 115 2SA1235 2 SA1235A 149 2 SC2237 *★ 2SA1282 2SA1282A 103 2 S C 5 1 25 149 2 S C 5 1 68 150 2 SC2320 150 2 SC 2320L 149 2 SC2538 2SA1283 2SA1284 2SA1285 149 2S C 2 6 03 149 2S C 2 6 27 2SA1285A 149 2 SC2628 2SA1286 153 AS 30
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PDF
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2SA1115
2SA1235
2SA1235A
2SA1282
2SA1282A
2SA1283
2SA1284
2SA1285
2SA1285A
2SA1286
M52777SP
M54630P
M38881M2
m59320
57704L
M38173M6
SF15DXZ
M34236
m37204m8
54630p
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