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    HA 431 TRANSISTOR Search Results

    HA 431 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    HA 431 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N3442

    Abstract: E271 2n4347
    Text: File Number 528.1 HA RR IS S E M I C O N D S E CT OR SbE T> 2N3442, 2N4347 4 3 0 2 2 7 1 Q Q H G 431 2 TÔ * H A S • -p High-Voltage Silicon N-P-N Transistors -3 3 - ‘3 T E R M IN A L D E S IG N A TIO N S c High-Power Devices for Applications in Industrial and Commercial Equipment


    OCR Scan     		PDF 2N3442, 2N4347 2N4347) 2N3442) 2N3442 2N4347. 2N3442. E271

    Untitled

    Abstract: No abstract text available
    Text: 32E V m A23b320 PNP Silicon High-Voltage Transistor Q O lb ö S S 3 « S IP BFN 21 SIEMENS/ SPCLi SEMICONDS T- 21-0,3 • Suitable for video output stages in TV sets and switching power supplies • High breakdown voltage • Low collector-emitter saturation voltage


    OCR Scan     		PDF A23b320 Q62702-F585 Q62702-F1059 23b320 102mA

    ha 431 transistor

    Abstract: 2SD2396 2SD 431 TRANSISTOR a 431 transistor n 431 transistor transistor 431 N
    Text: 2SD2396 Transistor, NPN Features Dimensions Units : mm • available in TO-220FN package • high dc current gain (hFE), typically hFE =1000 • low collector saturation voltage, typically VCE(sat) = 0.3 V at lc /lB = 2 A/ 0.05 A 2SD2396 (TO-22QFN) ¿ 3 .2 ±0.2


    OCR Scan     		PDF 2SD2396 O-220FN T0-220FP O-22QFN) 2SD2396 ha 431 transistor 2SD 431 TRANSISTOR a 431 transistor n 431 transistor transistor 431 N

    Untitled

    Abstract: No abstract text available
    Text: SOT223 NPN SILICON PLANAR HIGH CURREI HIGH PERFORMANCE TRANSISTORS I I ISSUE 2 - OCTOBER 1995_ FEATURES * * * * FZT851 FZT853 Extremely low equ ¡valent on-resistance; RcEtnt| 44mQ at 5A 6 Amps continuous current, up to 20 Amps peak current


    OCR Scan     		PDF OT223 FZT851 FZT853 FZT951 FZT953

    d947

    Abstract: d949 80614 B0620 BD PNP Q62702-D947 BD612 BD616 Q62702-D949 Q62702-D951
    Text: 5SC D • 023SbOS 3004303 T MSIE<S PIMP Silicon Epibase Transistors SIEMENS AKTIENGESELLSCHAF 'T~ 3 04383 7 D BD 612 BD 614 BD 616 BD 618 BD 620 The transistors BD 612, BD 614, BD 616, BD 618, and BD 6 2 0 are PNP silicon epibase power transistors in a plastic package similar to TO 202. The collector is electrically


    OCR Scan     		PDF 023SbOS BD612 BD616 Q62702-D947 Q62702-D949 Q62702-D951 Q62702-D953 Q62702-D955 fl23SbGS 000436b d947 d949 80614 B0620 BD PNP Q62702-D947 BD612 BD616 Q62702-D949 Q62702-D951

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA " I . \ W Green " . I. TM L i n e MGSF1P02LT1 Motorola Preferred Device Low rDS on) Sm all-Signal RMOSFETs TMOS Single P-Channel Field Effect Transistors


    OCR Scan     		PDF MGSF1P02LT1

    bf451

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE bTE D bb53^31 D0E7bT4 STS H A P X J j BF450 BF451 V HF SILICON PLANAR EPITAXIAL TRANSISTORS PNP transistors in a plastic envelope intended for HF and IF applications in radio receivers, especially for mixer stages in AM receivers and IF stages in AM/FM receivers with negative earth.


    OCR Scan     		PDF BF450 BF451 BF45ax. bf451

    ha 431 transistor

    Abstract: BSP122 UBB073 transistor 431 N
    Text: ^53^31 Philips Semiconductors Q023ñ30 APX bflñ Product specification N-channel enhancement mode vertical D-MOS transistor BSP122 N ANER PHILIPS/DISCRETE b7E D FEATURES QUICK REFERENCE DATA • Direct interface to C-MOS, TTL, etc. • High-speed switching


    OCR Scan     		PDF BSP122 OT223 0to10 ha 431 transistor BSP122 UBB073 transistor 431 N

    Untitled

    Abstract: No abstract text available
    Text: D73F5T1, D73F5T2 File Number 2367 HARRIS SErilCOND SECTOR SbE D 43D2271 G04DflbE STS T -3 7 -/S 5-Ampere Silicon P-N-P Power Transistors TERMINAL DESIGNATION Features: • Low I / c e sat ■ Fast switching speed m Complementary to D72F5T1,2 The D73F5T1 and D73F5T2 silicon p-n-p power transistors


    OCR Scan     		PDF D73F5T1, D73F5T2 43D2271 G04DflbE D72F5T1 D73F5T1 D73F5T2 O-251

    SILICON TRANSISTOR CORP

    Abstract: h a 431 transistor
    Text: SILICON TRANSISTOR CORP SbE J • 8 as „ü52 0 0 D 0 , „ 01Q M S T C SILICON TRANSISTOR CORPORATION { Katrina Road Chelmsford, Massachusetts 01824 Telephone: 508-256-3321 fax: 508-250-1046 . A POWERHOUSE 400 Volts 0.4 Ohms TECHNICAL DATA SHEET ABSOLUTE MAXIMUM RATINGS


    OCR Scan     		PDF SNF40404 ST102 MIL-S-19500 SILICON TRANSISTOR CORP h a 431 transistor

    f585

    Abstract: bfn21 62702-F585 transistor sl 431
    Text: PNP Silicon High-Voltage Transistor • • • • • BFN 21 Suitable for video output stages in TV sets and switching power supplies High breakdown voltage Low collector-em itter saturation voltage Low capacitance Complementary type: BFN 20 NPN Type Marking


    OCR Scan     		PDF 62702-F585 62702-F1059 f585 bfn21 62702-F585 transistor sl 431

    ha 431 transistor

    Abstract: BRY39 BRY39 circuit BRY39 application data MSB028 philips bry39 Programmable Unijunction Transistor BRY3 27B2S transistor ag
    Text: N AMER PHILIPS/DISCRETE bTE ]> bhSaTai DD27Ô2S RflT Philips S em iconductors Data sheet status Preliminary specification date ol Issue December 1990 Programmable unijunction transistor QUICK REFERENCE DATA DESCRIPTION A planar pnpn trigger device in a TO-72 metal envelope, intended for


    OCR Scan     		PDF 27B2S BRY39 10kii 7Z611S0 7Z61149 27fl3b ha 431 transistor BRY39 BRY39 circuit BRY39 application data MSB028 philips bry39 Programmable Unijunction Transistor BRY3 transistor ag

    BCw610

    Abstract: transistor marking code 431 BCW61B
    Text: Philips Semiconductors Product specification PNP general purpose transistors BCW61 series PINNING FEATURES • Low current max. 100 mA PIN • Low voltage (max. 32 V). APPLICATIONS DESCRIPTION 1 base 2 emitter 3 collector • General purpose switching and amplification.


    OCR Scan     		PDF BCW61 BCW60. BCW61A BCW61B BCW61C BCW610 8CW61C BCw610 transistor marking code 431

    f 0472 N-Channel MOSFET

    Abstract: hrf3205 mosfet HRF3205
    Text: HRF3205, HRF3205S in te ik il J u n e 1999 Data S h e e t 100A, 55V, 0.008 Ohm, N-Channel, Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a


    OCR Scan     		PDF HRF3205, HRF3205S HRF3205S f 0472 N-Channel MOSFET hrf3205 mosfet HRF3205

    BUZ41A

    Abstract: No abstract text available
    Text: SILICONIX INC 1ÖE » • Ô2S473S O G m b Q T Ö BUZ41A fsr Siliconix in c o r p o r a t e d N-Channel Enhancement Mode Transistor TO-220AB TOP VIEW ~Ô~ PRODUCT SUMMARY V BR|DSS 'W 500 1.5 •d (A 4.5 1 GATE 2 DRAIN (Connected to TAB) 3 SOURCE ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted)


    OCR Scan     		PDF 2S473S BUZ41A O-220AB ES473S GG14t. T-39-11 BUZ41A

    ha 431 transistor

    Abstract: PZTA44 PZTA45
    Text: q. „ , „ . • Philips Semiconductors bbSB'lBl 00EL017 bbT H A P X N AMER PHILIPS/DISCRETE NPN high voltage transistor FEATURES Product apBrtflratlnr. b7E D — — PZTA44; PZTA45 PIN CONFIGURATION • High voltage • High current. DESCRIPTION High voltage NPN transistor in a


    OCR Scan     		PDF 00EL017 PZTA44; PZTA45 OT223 OT223 PZTA44 PZTA45= PZTA44 ha 431 transistor PZTA45

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS SIPMOS Power Transistor • • • N channel Enhancement mode Avalanche-rated Type ^DS ¡0 11DS on BUZ 78 800 V 1.5 A 9.0 £2 Maxim um Ratings Parameter Continuous drain current, Tc = 25 'C Pulsed drain current, Tc = 25 °C Avalanche current, limited by Timax


    OCR Scan     		PDF O-220 C67078-S1318-A2

    ha 431 transistor

    Abstract: No abstract text available
    Text: Product specification Philips Semiconductors Silicon Diffused Power Transistor BU2727AX GENERAL DESCRIPTION High voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Designed to withstand VCES pulses up to 1700V.


    OCR Scan     		PDF BU2727AX ha 431 transistor

    14N50

    Abstract: STW14N50 sd 431 transistor dq45c SGS-THOMSON 435 14N50F
    Text: 7 ^ 2 3 7 Ü Ü M S 'iS l b ö T « S Ü T H Gl SGS-THOMSON i^OTi «S STH14N50/FI STW14N50 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STH 14N50 S TH 14N50FI STW 14N50 . . • . ■ ■ V dss RDS on Id 500 V 500 V 500 V < 0.45 £2 < 0.45 £2 < 0.45 n


    OCR Scan     		PDF 14N50 14N50FI 14N50 STH14N50/FI STW14N50 VGS-10V STW14N50 sd 431 transistor dq45c SGS-THOMSON 435 14N50F

    sd 431 transistor

    Abstract: No abstract text available
    Text: S IE M E N S SIPMOS Small-Signal Transistor BSS 91 VDS = 240 V /D = 0.35 A ^DS on = 6-0 A • N channel • Enhancem ent mode • Package: T O -1 8 ') Type Ordering code for version in bulk BSS 91 Q 62702 -S 45 7 Maximum Ratings Parameter Symbol Values


    OCR Scan     		PDF

    BD618

    Abstract: BD 202 transistors
    Text: 5SC D • 623Sb QS Q 0Q 4 3 Ö 3 T H S I E 6 PIMP Silicon Epibase Transistors SIEMENS AKTIENGESELLSCHAF 7 04383 D BD612 BD 614 BD616 BD 618 BD 620 The transistors BD 612, BD 614, BD 616, BD 618, and BD 620 are PNP silicon epibase power transistors in a plastic package similar to TO 202. The collector is electrically


    OCR Scan     		PDF 623Sb BD612 BD616 Q62702-D947 Q62702-D949 Q62702-D951 Q62702-D953 Q62702-D955 612/BD 614/BD BD618 BD 202 transistors

    BUK627-400A

    Abstract: BUK627-400B ha 431 transistor transistor 431 N
    Text: N AMER P H I L I P S / D I S C R E T E BSE D • ^53=131 0020bS0 7 ■ PowerMOS transistor Fast Recovery Diode FET BUK627-400A BUK627-400B T -3 7 -II GENERAL DESCRIPTION N-channel enhancem ent mode field-effect power transistor in a plastic full pack envelope.


    OCR Scan     		PDF BUK627-400A BUK627-400B BUK627 -400A -400B ha 431 transistor transistor 431 N

    UFN432

    Abstract: mosfet UFN432 UFN 432 UFN431 UFN433
    Text: POWER MOSFET TRANSISTORS 500 Volt, 1.5 Ohm N-Channel UFN430 UFN431 UFN432 UFN433 FEATURES DESCRIPTION • • • • • The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Rosiom and a high transconductance.


    OCR Scan     		PDF UFN430 UFN431 UFN432 UFN433 UFN430 UFN431 UFN432 mosfet UFN432 UFN 432 UFN433

    BUK445-100A

    Abstract: BUK445-100B 100-P BUK445 PQ25-C
    Text: N AMER P H I L I P S / D I S C R E T E bTE ]> • 1^53^31 DD3DSSS Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode fieid-effect power transistor in a plastic full-pack envelope. The device is intended for use in


    OCR Scan     		PDF bbS3T31 BUK445-100A/B -SOT186 BUK445 -100B BUK445-100A BUK445-100B 100-P PQ25-C