SC8810
Abstract: transistor h9 DTC124EK equivalent DI-74 H9 transistor marking DTC114TK dtc143tk
Text: D I G I TA L T R A N S I S T O R A R R AY S DUAL ISOLATED NPN TRANSISTOR CIRCUITS • COMPLETE SUB–CIRCUITS IN A SINGLE PACKAGE: SAVE PLACEMENT COSTS, INCREASES RELIABILITY • APPLICATIONS INCLUDE: PRE-AMPS, TV TUNERS, MIXER OSCILLATORS, INTERFACING LOGIC,
|
Original
|
SC-88,
SC-74
lea50
SC-88
SC8810
transistor h9
DTC124EK equivalent
DI-74
H9 transistor marking
DTC114TK
dtc143tk
|
PDF
|
Untitled
Abstract: No abstract text available
Text: General purpose dual digital transistors EMH10 / UMH10N Dimensions (Unit : mm) Structure Epitaxial planar type NPN silicon transistor (Built-in resistor type) 0.22 Features 1) Two DTC123J chips in a EMT or UMT package. 2) Mounting possible with EMT3 or UMT3 automatic mounting machines.
|
Original
|
EMH10
UMH10N
DTC123J
EMH10
SC-88)
R1120A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: General purpose dual digital transistors EMH10 / UMH10N Structure Epitaxial planar type NPN silicon transistor (Built-in resistor type) Dimensions (Unit : mm) 0.22 Features 1) Two DTC123J chips in a EMT or UMT package. 2) Mounting possible with EMT3 or UMT3 automatic mounting machines.
|
Original
|
EMH10
UMH10N
DTC123J
EMH10
R1120A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: AEC-Q101 Qualified General purpose dual digital transistors EMH10 / UMH10N EMH10FHA / UMH10NFHA Dimensions (Unit : mm) Structure Epitaxial planar type NPN silicon transistor (Built-in resistor type) 0.22 Features 1) Two DTC123J chips in a EMT or UMT package.
|
Original
|
AEC-Q101
EMH10
UMH10N
EMH10FHA
UMH10NFHA
DTC123J
EMH10FHA
EMH10
R1120A
|
PDF
|
2SC5936
Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
|
Original
|
XP06501T
XP06531
XP06545
XP0A554
XP0D873
XP0D874
XP0D875
2SC5936
2SC6073
PANASONIC TRANSISTOR 2SC6073
2sc5929
MN1280
transistor 2SC6073
2SC5936 equivalent
2SC6074
TRANSISTOR 2SC5929
2sc5928
|
PDF
|
SOT-353 marking code B2
Abstract: No abstract text available
Text: EMH10 / UMH10N Datasheet NPN 100mA 50V Complex Digital Transistors Bias Resistor Built-in Transistors lOutline Parameter Tr1 and Tr2 EMT6 UMT6 (6) (6) VCC IC(MAX.) R1 R2 50V 100mA 2.2kW 47kW (5) (5) (4) (4) (1) (1) (2) (2) (3) (3) EMH10 (SC-107C) lFeatures
|
Original
|
EMH10
UMH10N
100mA
EMH10
SC-107C)
UMH10N
OT-353
SC-88)
DTC123J
SOT-353 marking code B2
|
PDF
|
2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
|
Original
|
responsibiliXP08081
XP08546
XP0A554
XP0D873
XP0D874
XP0D875
XP0E554
2sc5929
MN1280
TRANSISTOR 2SC5929
3SK129
3SK97
2sc5928
2PG009
2SC5929 equivalent
2sk4000
2sd965 TRANSISTOR REPLACEMENT GUIDE
|
PDF
|
Untitled
Abstract: No abstract text available
Text: K4-Antriebssysteme Genial vielseitig Das Unternehmen ebm-papst Die ganze Welt der Luft- und Antriebstechnik: Das ist die Welt von ebm-papst. Über 11.000 Mitarbeiterinnen und Mitarbeiter – in aller Welt – entwickeln, produzieren und vertreiben Motoren und Ventilatoren. Globale Präsenz und unser einzigartiges Produktprogramm mit einem Qualitätsstandard, der seinesgleichen sucht, haben uns zum Weltmarktführer gemacht. Ein hohes Wissen um die Bedürfnisse unserer Kunden sowie das
|
Original
|
ebm13086
210x297
SC-500
|
PDF
|
DTC123J
Abstract: EMH10 IMH10A T110 UMH10N
Text: EMH10 / UMH10N / IMH10A Transistors General purpose dual digital transistors EMH10 / UMH10N / IMH10A zExternal dimensions (Units : mm) zFeatures 1) Two DTC123J chips in a EMT or UMT or SMT package. 2) Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines.
|
Original
|
EMH10
UMH10N
IMH10A
DTC123J
EMH10
IMH10A
T110
|
PDF
|
Untitled
Abstract: No abstract text available
Text: K4-Antriebssysteme Genial vielseitig Ausgabe 2015-04 K4_Antriebssysteme_2015_4_D.indd 1 29.04.2015 14:59:48 Das Unternehmen ebm-papst Die ganze Welt der Luft- und Antriebstechnik: Das ist die Welt von ebm-papst. Über 11.700 Mitarbeiterinnen und Mitarbeiter – in aller Welt –
|
Original
|
ebm13086
210x297
|
PDF
|
JB marking transistor
Abstract: 945 crb transistor marking JB
Text: MSD2714AT1 Preferred Device VHF/UHF Transistor NPN Silicon http://onsemi.com MAXIMUM RATINGS Rating Symbol Max Unit Collector-Emitter Voltage VCEO 25 Vdc Collector-Base Voltage VCBO 30 Vdc Emitter-Base Voltage VEBO 3.0 Vdc Characteristic Symbol Max Unit Total Device Dissipation FR–5 Board
|
Original
|
MSD2714AT1
JB marking transistor
945 crb
transistor marking JB
|
PDF
|
dc motor for 24v braun
Abstract: No abstract text available
Text: 16:47 Seite 75 Informationen 18.01.2011 94 VARIODRIVE Compact ECI-Motorsensorik VarioDrive C 82 ECI-Motor ECI-Getriebemotor BG-Motor 79 BCI-Motor ECI-Motoren AC-Motoren 76 Beschreibung ECI-Motor Technik VARIODRIVE Die Motorfamilie ECI 75 Vertretungen Antriebstechnik_2011_01_18_Finale_DE_:Vorlage
|
Original
|
M12Stecker
SAC-5P-M12MS
dc motor for 24v braun
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MMBTH10LT1, MMBTH10-4LT1 Preferred Devices VHF/UHF Transistor NPN Silicon • Device Marking: 3EM http://onsemi.com Device Marking: COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 25 Vdc Collector-Base Voltage VCBO 30 Vdc
|
Original
|
MMBTH10LT1,
MMBTH10-4LT1
|
PDF
|
Untitled
Abstract: No abstract text available
Text: K4 drive systems Brilliantly versatile , The engineer s choice version 2015-04 K4_Antriebssysteme_2015_4_EN.indd 1 29.04.2015 14:59:28 Company profile: ebm-papst The entire scope of ventilation and drive technology: this is the world of ebm-papst. More than 11.700 people – in Germany and throughout the world –
|
Original
|
ebm14102
210x297
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: EMH10 / UMH10N / IMH10A Transistors General purpose dual digital transistors EMH10 / UMH10N / IMH10A zExternal dimensions (Units : mm) zFeatures 1) Two DTC123J chips in a EMT or UMT or SMT package. 2) Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines.
|
Original
|
EMH10
UMH10N
IMH10A
DTC123J
EMH10
UMH10N
|
PDF
|
DTC123
Abstract: DTC123J EMH10 IMH10A T110 UMH10N IMH10
Text: EMH10 / UMH10N / IMH10A Transistors General purpose dual digital transistors EMH10 / UMH10N / IMH10A zExternal dimensions (Unit : mm) zFeatures 1) Two DTC123J chips in a EMT or UMT or SMT package. 2) Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines.
|
Original
|
EMH10
UMH10N
IMH10A
DTC123J
EMH10
DTC123
IMH10A
T110
IMH10
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 10:14 Seite 75 Information 27.05.2011 94 VARIODRIVE Compact ECI motor sensor VarioDrive C 82 ECI motor ECI gearmotors BG motor 79 BCI motor ECI motors AC motors 76 Specifications ECI motor technical information VARIODRIVE The ECI motor family 75 Representatives
|
Original
|
SAC-5P-M12MS
|
PDF
|
MIP2F3
Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the
|
Original
|
PAMP13-N1
MIP2F3
MIP2F4
MIP382
MIP2E7DMY
mip2f2
mip291
MIP414S
MIP2E5DMY
mip411
MIP3E3SMY equivalent
|
PDF
|
Untitled
Abstract: No abstract text available
Text: UMH10N IMH10A Transistor, digitai, dual, NPN, with 2 resistors Features Dimensions Units : mm • available in UMT6 (UM6) and SMT6 (IMD, SC-74) package • package marking: UMH10N and IMH10A; H10 • • • UMH10N (UMT6) 2.0±0.2 3 U 2 M 1) package contains two independent
|
OCR Scan
|
UMH10N
IMH10A
SC-74)
IMH10A;
DTC123JKA)
SC-70)
SC-59)
UMH10N
|
PDF
|
IRFD620
Abstract: IRFD420 IRFD9220 h10 npn
Text: International lo i Rectifier HEXFET Power MOSFETs HEXDips Low charge HEXFETs reduce gate charge by 40% or more and capacitances by up to 85% without any added device cost. Part Number IRF0C10LC V BR d s s Drain-to-Source ROS(on) lg Continuous On-State Drain Current
|
OCR Scan
|
IRF0C10LC
IRFD014
IRFD024
IRFD110
IRFD120
IRFD210
IRFD220
IRFD214
IRFD224
IRFD310
IRFD620
IRFD420
IRFD9220
h10 npn
|
PDF
|
BC328
Abstract: BC338
Text: SEMICONDUCTOR TECHNICAL DATA BC328 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • High Current : Ic=-800mA. • DC Current Gain : hFE=100~630 VCE=-1V, Ic=-100mA . • For Complementary with NPN type BC338.
|
OCR Scan
|
BC328
-800mA.
-100mA)
BC338.
BC328
BC338
|
PDF
|
transistor marking MH
Abstract: 400M KSC2755 marking uma samsung tv marking mh npn
Text: SAMSUNG SEMICONDUCTOR INC 14E KSC2755 D | OOObma S | NPN EPITAXIAL SILICON TRANSISTOR T -3 1-1 5 RF AMP, FOR VHF TV TUNER • LOW NF, HIGH Gpe • NF=2.0dB Typ. G pe=23dB Typ. f=200MHz • FORW ARD A G C CAPABILITY TO 30 dB ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
|
OCR Scan
|
KSC2755
200MHz)
T-31-15
sot-23
400MHz
f-100
400Mh
-100MHz
300Mf
200MHz
transistor marking MH
400M
KSC2755
marking uma
samsung tv
marking mh npn
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Ordering number:ENN6079 PNP/NPN Silicon Epitaxial Planar Transistors CPH 3110/3210 IS A 0 O I DC/DC Converter Applications Applications • Relay drivers, lamp drivers, motor drivers, and strobes. Package Dimensions unit:mm 2150A [CPH3110/3210] 2.9 0.15. r 0, 4
|
OCR Scan
|
ENN6079
CPH3110/3210]
PH311
600mm2x0
7T1707b
|
PDF
|
BUX100
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Silicon diffused power transistor BUX100 GENERAL DESCRIPTION High voltage, high speed glass passivated npn power transistor in a SOT82 envelope intended for use in high frequency electronic lighting ballast applications.
|
OCR Scan
|
BUX100
711DfiÂ
711005b
BUX100
|
PDF
|
