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    H 8550 PNP TRANSISTOR Search Results

    H 8550 PNP TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    ISL73096EHVF Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation
    ISL73096RHVF Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation
    ISL73096RHX/SAMPLE Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation
    ISL73096EHVX Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation

    H 8550 PNP TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    s 8550 d

    Abstract: Bc 8550 transistor 8550 transistor bc 8550 8550 transistor PNP 8550 8550D transistor PNP transistor 8550 PNP transistor TO-92 BC 8550c
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTOR 8550 SR12 TO-92 Plastic Package E BC ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage SYMBOL VCEO VALUE 25 UNITS


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    PDF C-120 190505E s 8550 d Bc 8550 transistor 8550 transistor bc 8550 8550 transistor PNP 8550 8550D transistor PNP transistor 8550 PNP transistor TO-92 BC 8550c

    BR 8550

    Abstract: br 8550 NPN Transistor st 8550d st8550d BR 8550 D ST 8550 8550 transistor PNP transistor 8550 8550 pnp transistor st8550c
    Text: ST 8550 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into four groups, B, C, D and E, according to its DC current gain. As


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    PDF 20MHz BR 8550 br 8550 NPN Transistor st 8550d st8550d BR 8550 D ST 8550 8550 transistor PNP transistor 8550 8550 pnp transistor st8550c

    BR 8550

    Abstract: br 8550 NPN Transistor st8550d BR 8550 D st 8550d 8550 NPN Transistor PNP transistor 8550 BR 8550 transistor st 8550 br 8550 c
    Text: ST 8550 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into four groups, B, C, D and E, according to its DC current gain. As


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    PDF 20MHz BR 8550 br 8550 NPN Transistor st8550d BR 8550 D st 8550d 8550 NPN Transistor PNP transistor 8550 BR 8550 transistor st 8550 br 8550 c

    BR 8550

    Abstract: br 8550 NPN Transistor BR 8550 D st8550d s 8550 d PNP transistor 8550 s 8550 transistors PNP 8550 8550 br 8550 c NPN Transistor
    Text: ST 8550 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into four groups, B, C, D and E, according to its DC current gain. As


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    PDF 20MHz BR 8550 br 8550 NPN Transistor BR 8550 D st8550d s 8550 d PNP transistor 8550 s 8550 transistors PNP 8550 8550 br 8550 c NPN Transistor

    BR 8550

    Abstract: 8550 transistor 8550 pnp transistor common collector PNP br 8550 c BR 8550 transistor 8550 8550 pnp BR 8550 ic
    Text: MMBT8550W PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Emitter Voltage -VCEO 25 V Collector Base Voltage -VCBO 40 V Emitter Base Voltage -VEBO 6


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    PDF MMBT8550W MMBT8550CW MMBT8550DW BR 8550 8550 transistor 8550 pnp transistor common collector PNP br 8550 c BR 8550 transistor 8550 8550 pnp BR 8550 ic

    st8550d

    Abstract: br 8550 NPN Transistor BR 8550 BR 8550 D st8550c st 8550d PNP transistor 8550 8550 NPN Transistor BR 8550 transistor 8550b
    Text: ST 8550 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into four groups, B, C, D and E, according to its DC current gain. As


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    PDF 20MHz st8550d br 8550 NPN Transistor BR 8550 BR 8550 D st8550c st 8550d PNP transistor 8550 8550 NPN Transistor BR 8550 transistor 8550b

    BR 8550

    Abstract: br 8550 NPN Transistor 8550 NPN Transistor 8550 SOT-23 MMBT8550C 8550 sot-23 pnp 8550 MMBT8050C MMBT8050D s 8550 c
    Text: MMBT8550C / MMBT8550D PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. As complementary type the NPN transistor MMBT8050C and MMBT8050D are recommended. SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC Symbol Value


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    PDF MMBT8550C MMBT8550D MMBT8050C MMBT8050D OT-23 20MHz BR 8550 br 8550 NPN Transistor 8550 NPN Transistor 8550 SOT-23 8550 sot-23 pnp 8550 s 8550 c

    BR 8550

    Abstract: 8550 sot-23 8550 sot-23 pnp MMBT8550D br 8550 NPN Transistor MMBT8050D ST MMBT8550C 8550 NPN Transistor 8550 TRANSISTOR 8550
    Text: MMBT8550C / MMBT8550D PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. As complementary type the NPN transistor MMBT8050C and MMBT8050D are recommended. SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC Symbol Value


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    PDF MMBT8550C MMBT8550D MMBT8050C MMBT8050D OT-23 20MHz BR 8550 8550 sot-23 8550 sot-23 pnp MMBT8550D br 8550 NPN Transistor MMBT8050D ST 8550 NPN Transistor 8550 TRANSISTOR 8550

    BR 8550

    Abstract: PNP transistor 8550 BR 8550 ic ic 8550 PNP 8550 ST 8550 8550 pnp MMBT8550W 8550 pnp transistor c 8550 transistor
    Text: MMBT8550W PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Emitter Voltage -VCEO 25 V Collector Base Voltage -VCBO 40 V Emitter Base Voltage -VEBO 6


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    PDF MMBT8550W MMBT8550CW MMBT8550DW BR 8550 PNP transistor 8550 BR 8550 ic ic 8550 PNP 8550 ST 8550 8550 pnp MMBT8550W 8550 pnp transistor c 8550 transistor

    8550 ecb

    Abstract: PNP 8550 transistor 8550 d 8550 pnp transistor PNP transistor 8550 BTN8050A3 BTP8550A3 h 8550 pnp transistor C313A
    Text: Spec. No. : C313A3 Issued Date : 2003.07.30 Revised Date : 2004.02.26 CYStech Electronics Corp. Page No. : 1/4 General Purpose PNP Epitaxial Planar Transistor BTP8550A3 Description The BTP8550A3 is designed for use in output amplifier of portable radios in class B push pull operation.


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    PDF C313A3 BTP8550A3 BTP8550A3 BTN8050A3. BTP8550A UL94V-0 8550 ecb PNP 8550 transistor 8550 d 8550 pnp transistor PNP transistor 8550 BTN8050A3 h 8550 pnp transistor C313A

    PNP 8550

    Abstract: h 8550 pnp transistor transistor 8550 BTN8050A3 BTP8550BA3
    Text: Spec. No. : C313A3-B Issued Date : 2004.03.04 CYStech Electronics Corp. Revised Date : Page No. : 1/4 General Purpose PNP Epitaxial Planar Transistor BTP8550BA3 Description The BTP8550BA3 is designed for use in output amplifier of portable radios in class B push pull operation.


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    PDF C313A3-B BTP8550BA3 BTP8550BA3 BTN8050A3. UL94V-0 PNP 8550 h 8550 pnp transistor transistor 8550 BTN8050A3

    transistor br 8050

    Abstract: BR 8050 D BR 8050 NPN transistor 8050 PNP 8550 BR 8050 c hFE 8050 transistor b 8050 1/STK 8050 ic
    Text: 8050 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into four groups, B, C, D and E, according to its DC current gain. As


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    st 8050d

    Abstract: st8050c st 8050C ST8050D transistor b 8050 st 8050 8050B transistor br 8050 transistor 8050d 8050c transistor
    Text: ST 8050 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into four groups, B, C, D and E, according to its DC current gain. As


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    st 8050d

    Abstract: NPN transistor 8050d st8050c TRANSISTOR c 8050 transistor br 8050 BR 8050 D BR 8050 transistor b 8050 8050 pnp transistor 8050 TRANSISTOR PNP
    Text: ST 8050 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into four groups, B, C, D and E, according to its DC current gain. As


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    st 8050d

    Abstract: st8050c st8050d BR 8050 D st 8050C 8050c transistor 8050 TRANSISTOR PNP BR 8050 st 8050 8050B
    Text: ST 8050 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into four groups, B, C, D and E, according to its DC current gain. As


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    c2328a

    Abstract: B564A c 2328a 8050 sot89 SD471A D471A 8550 SOT-89 63916 BC337 medium power transistors
    Text: NPN Medium Power Transistors NPN Medium Power Transistors Device No. [Mark] Case Style VCES* V V CBO EBO V (V) Min (V) Min Min VCEO I CBO VCB I V hFE @ C & CE Min Max (mA) (V) (nA) @ (V) Max IC C ob (mA) @ (V) & (pF) I (V) Max (I = C ) Max Min Max B 10 V CE(SAT)


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    PDF O-92L OT-89 KSB1121 MPS8550 MPS6562 c2328a B564A c 2328a 8050 sot89 SD471A D471A 8550 SOT-89 63916 BC337 medium power transistors

    br 8550 NPN Transistor

    Abstract: BR 8550 BR 8550 D 8550 NPN Transistor br 8550 c BR 8550 transistor br 8550 c NPN Transistor c 8550 transistor h 8550 pnp transistor 8550 pnp
    Text: HN 8550 PNP Silicon Expitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. 3.6 The transistor is subdivided into two groups, C and D, according to its DC current gain. As complementary type


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    PDF 103mA br 8550 NPN Transistor BR 8550 BR 8550 D 8550 NPN Transistor br 8550 c BR 8550 transistor br 8550 c NPN Transistor c 8550 transistor h 8550 pnp transistor 8550 pnp

    8050 TRANSISTOR PNP

    Abstract: 8050 8550 8050 pnp transistor transistor 8550 d transistor b 8050
    Text: 8550 GENERAL DESCRIPTION:- ITie 8550 is a PNP epitaxial silicon planar transistor designed for use in the audio output stage and converter/inverter circuits. Complementary to 8050. ABSOLUTE MAXIMUM RATINGS TO-92A Note 1 Maximum Temperatures —55°C to +135°C


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    PDF O-92A 33mW/Â 25mW/Â 100mA Boxfe477, 8050 TRANSISTOR PNP 8050 8550 8050 pnp transistor transistor 8550 d transistor b 8050

    h 8550 pnp transistor

    Abstract: No abstract text available
    Text: 8550 G E N E R A L D E S C R IP T IO N :- Hie 8550 is a PNP epitaxial silicon planar transistor designed for use in the audio output stage and converter/inverter circuits. Complementary to 8050. A BSO LU T E M A X IM U M R A T IN G S TO-92A Note 1 Maximum Temperatures


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    PDF O-92A h 8550 pnp transistor

    BR 8050 D

    Abstract: transistor br 8050 BR 8050 8050 TRANSISTOR PNP 8050 pnp transistor NPN transistor 8050d transistor b 8050 TRANSISTOR c 8050 80500 TRANSISTOR 8050 d h
    Text: HN 8050 NPN Silicon Expitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As complementary type


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    PDF 103mA BR 8050 D transistor br 8050 BR 8050 8050 TRANSISTOR PNP 8050 pnp transistor NPN transistor 8050d transistor b 8050 TRANSISTOR c 8050 80500 TRANSISTOR 8050 d h

    transistor 8550

    Abstract: CL8550 8550 transistor h 8550 pnp transistor
    Text: CL8550 T 0 -9 2 B oENERAL DESCRIPTION:— The 8550 is a PNP epitaxial silicon planar transistor designed for use in the audio output stage and converter/inverter circuits. Complementary to 8050. ABSOLUTE M A X IM U M R A T IN G S „ T O -928 (Note 1) Maximum Temperatures


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    PDF CL8550 100mA Boxfe477. transistor 8550 CL8550 8550 transistor h 8550 pnp transistor

    JE8550

    Abstract: JE8050 JE8550B
    Text: NEC PNP SILICON TRANSISTOR ELECTRON DEVICE JE8550 D ESCR IPTIO N The JE 8550 is designed fo r use in 2 W o u tp u t a m p lifie r o f portable radios in class B push-pull operation. PACKAGE D IM E N S IO N S in millimeters inches! FE A TU R ES • High total power dissipation. (PT : 2.0 W, T c = 2 5 °C


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    PDF JE8550 JE8550 JE8050. JE8050 JE8550B

    diac D30

    Abstract: db3 diac bc 9013 marking 4d NPN ZN 5551 diode DIAC DB3 EQUIVALENT BZXS4C24V 8Z-2 9014 sot-23 ZT 5551
    Text: Continental Device India Limited An IS/ISO 9002 & IECQ. certified manufacturer of quality discrete semiconductor components Surface Mount SOT-23 Semiconductors , , Transistors Z ener Diodes Switching and Schottky Diodes Quick Reference Data CONTINENTAL DEVICE INDIA LIMITED


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    PDF OT-23 C-120, conventN1711 2N1893 2N2102 2N2218A 2N2219A 2N3019 2N3503 2N3700 diac D30 db3 diac bc 9013 marking 4d NPN ZN 5551 diode DIAC DB3 EQUIVALENT BZXS4C24V 8Z-2 9014 sot-23 ZT 5551

    S3 TRIO 64

    Abstract: No abstract text available
    Text: UNITED MICROELECTRONICS Ì 2 D Ë | TBSSôia 0Q004SS 3 9325812 U N IT E D M IC R O E L E C T R O N IC S 92D 00455 D J l7 7 -/3 U M 5101 rr.T .n Voice Recording and r ” " i Reproducing CTJ- Features • DRAM is used as a voice data memory. ■ The RC oscillator makes sample rate changing fea%


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    PDF 0Q004SS 8K-32K f/15V UM5101 UMS101 /200V S3 TRIO 64