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    340G-02

    Abstract: Y25N120 GY25N120 motorola transistor m 237
    Text: MOTOROLA Order this document by MGY25N 120/D SEMICONDUCTOR TECHNICAL DATA Product Preview Data Sheet M GY25N120 Insulated G ate Bipolar Transistor N-Channel Enhancement Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced termination scheme to provide an enhanced and reliable high voltage


    OCR Scan     		MGY25N 120/D GY25N120 MGY25N120/D 340G-02 Y25N120 GY25N120 motorola transistor m 237 PDF

    transistor motorola 236

    Abstract: motorola transistor m 237
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M GY25N120D Insulated Gate Bipolar Transistor with Anti-Parallel Diode Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate IGBT & DIODE IN TO-264 25 A @ 90 C 38 A @ 25°C 1200 VOLTS


    OCR Scan     		GY25N120D transistor motorola 236 motorola transistor m 237 PDF

    GY25N120

    Abstract: n120 30 igbt
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet GY25N120 Insulated Gate Bipolar Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced termination scheme to provide an enhanced and reliable high


    OCR Scan     		MGY25 O-264 GY25N120 0E-05 0E-04 0E-03 0E-02 0E-01 GY25N120 n120 30 igbt PDF