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    GW60H65DF Search Results

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    GW60H65DF Price and Stock

    STMicroelectronics STGW60H65DFB-4

    IGBT
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    DigiKey STGW60H65DFB-4 Tube 596 1
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    Avnet Americas STGW60H65DFB-4 Tray 600
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    Newark STGW60H65DFB-4 Bulk 30 1
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    TME STGW60H65DFB-4 1
    • 1 $6.53
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    Avnet Silica STGW60H65DFB-4 540 17 Weeks 30
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    EBV Elektronik STGW60H65DFB-4 21 Weeks 30
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    STMicroelectronics STGW60H65DFB

    IGBT TRENCH FS 650V 80A TO247
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    DigiKey STGW60H65DFB Tube 546 1
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    Avnet Americas STGW60H65DFB Tube 15 Weeks 600
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    Mouser Electronics STGW60H65DFB 668
    • 1 $5.1
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    Newark STGW60H65DFB Bulk 320 1
    • 1 $4.3
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    STMicroelectronics STGW60H65DFB 668 1
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    TME STGW60H65DFB 166 1
    • 1 $5.37
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    Avnet Silica STGW60H65DFB 60 16 Weeks 30
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    EBV Elektronik STGW60H65DFB 16 Weeks 30
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    Win Source Electronics STGW60H65DFB 4,200
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    STMicroelectronics STGW60H65DF

    IGBT 650V 120A 360W TO247
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    DigiKey STGW60H65DF Tube 600
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    GW60H65DF Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    GW60H65DFB

    Abstract: No abstract text available
    Text: GW60H65DFB STGWT60H65DFB 650 V, 60 A high speed trench gate field-stop IGBT Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C TAB • High speed switching series • Minimized tail current 2 • Very low saturation voltage: VCE sat = 1.6 V


    Original     		PDF STGW60H65DFB STGWT60H65DFB O-247 DocID024365 GW60H65DFB

    Untitled

    Abstract: No abstract text available
    Text: GW60H65DFB STGWT60H65DFB 650 V, 60 A high speed trench gate field-stop IGBT Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C TAB • High speed switching series • Minimized tail current 2 • Very low saturation voltage: VCE sat = 1.6 V


    Original     		PDF STGW60H65DFB STGWT60H65DFB O-247 DocID024365

    GW60H65DFB

    Abstract: GWT60H65DFB STGW60H65DFB fieldstop igbt GW60 AM01507v1
    Text: GW60H65DFB STGWT60H65DFB 650 V, 60 A high speed trench gate field-stop IGBT Datasheet - preliminary data Features • Maximum junction temperature: TJ = 175 °C  High speed switching series  Minimized tail current 2  Very low saturation voltage: VCE sat = 1.65 V


    Original     		PDF STGW60H65DFB STGWT60H65DFB O-247 DocID024365 GW60H65DFB GWT60H65DFB fieldstop igbt GW60 AM01507v1

    GW60H65DF

    Abstract: STGW60H65DF stgw60h rthjc
    Text: GW60H65DF 60 A, 650 V field stop trench gate IGBT with very fast diode Datasheet − preliminary data Features • High speed switching ■ Tight parameters distribution ■ Safe paralleling ■ Low thermal resistance ■ 6 µs short-circuit withstand time


    Original     		PDF STGW60H65DF O-247 GW60H65DF STGW60H65DF stgw60h rthjc

    IGBT 60A

    Abstract: No abstract text available
    Text: GW60H65DF 60 A, 650 V field stop trench gate IGBT with very fast diode Datasheet − production data Features • High speed switching ■ Tight parameters distribution ■ Safe paralleling ■ Low thermal resistance ■ 6 µs short-circuit withstand time


    Original     		PDF STGW60H65DF O-247 IGBT 60A

    Untitled

    Abstract: No abstract text available
    Text: GW60H65DF 60 A, 650 V field stop trench gate IGBT with very fast diode Datasheet − production data Features • High speed switching ■ Tight parameters distribution ■ Safe paralleling ■ Low thermal resistance ■ 6 µs short-circuit withstand time


    Original     		PDF STGW60H65DF O-247

    Untitled

    Abstract: No abstract text available
    Text: GW60H65DFB STGWT60H65DFB Trench gate field-stop IGBT, HB series 650 V, 60 A high speed Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C TAB • High speed switching series • Minimized tail current 2 • Very low saturation voltage: VCE sat = 1.6 V


    Original     		PDF STGW60H65DFB STGWT60H65DFB O-247 DocID024365