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    Susumu Co Ltd RGT2012P-2490-B-T5

    RES 249 OHM 0.1% 1/10W 0805
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    DigiKey RGT2012P-2490-B-T5 Digi-Reel 19,587 1
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    Susumu Co Ltd RGT2012P-123-B-T5

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    Susumu Co Ltd RGT2012P-153-B-T5

    RES 15 KOHM 0.1% 1/10W 0805
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    DigiKey RGT2012P-153-B-T5 Cut Tape 8,840 1
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    Susumu Co Ltd RGT2012P-303-B-T5

    RES 30 KOHM 0.1% 1/10W 0805
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    DigiKey RGT2012P-303-B-T5 Digi-Reel 3,081 1
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    Susumu Co Ltd RGT2012P-512-B-T5

    RES 5.1 KOHM 0.1% 1/10W 0805
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    GT20 Datasheets (122)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    GT-20 MCE / KDI ATTENUATOR, PIN DIODE Original PDF
    GT20 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    GT20 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    GT200 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    GT2000-10000A-000 Stellar Technology Pressure Sensor: Transmitter: 0 to 10000psi Range: Absolute Type Original PDF
    GT2000-10000G-000 Stellar Technology Pressure Sensor: Transmitter: 0 to 10000psi Range: Sealed Gage Type Original PDF
    GT2000-10000T-000 Stellar Technology Pressure Sensor: Transmitter: 0 to 10000psi Range: True Gage Type Original PDF
    GT2000-1000A-000 Stellar Technology Pressure Sensor: Transmitter: 0 to 1000psi Range: Absolute Type Original PDF
    GT2000-1000G-000 Stellar Technology Pressure Sensor: Transmitter: 0 to 1000psi Range: Sealed Gage Type Original PDF
    GT2000-100G-000 Stellar Technology Pressure Sensor: Transmitter: 0 to 100psi Range: Sealed Gage Type Original PDF
    GT2000-100T-000 Stellar Technology Pressure Sensor: Transmitter: 0 to 100psi Range: True Gage Type Original PDF
    GT2000-10A-000 Stellar Technology Pressure Sensor: Transmitter: 0 to 10psi Range: Absolute Type Original PDF
    GT2000-10G-000 Stellar Technology Pressure Sensor: Transmitter: 0 to 10psi Range: Sealed Gage Type Original PDF
    GT2000-15000G-000 Stellar Technology Pressure Sensor: Transmitter: 0 to 15000psi Range: Sealed Gage Type Original PDF
    GT2000-15000T-000 Stellar Technology Pressure Sensor: Transmitter: 0 to 15000psi Range: True Gage Type Original PDF
    GT2000-1500A-000 Stellar Technology Pressure Sensor: Transmitter: 0 to 1500psi Range: Absolute Type Original PDF
    GT2000-1500G-000 Stellar Technology Pressure Sensor: Transmitter: 0 to 1500psi Range: Sealed Gage Type Original PDF
    GT2000-15G-000 Stellar Technology Pressure Sensor: Transmitter: 0 to 15psi Range: Sealed Gage Type Original PDF
    GT2000-15T-000 Stellar Technology Pressure Sensor: Transmitter: 0 to 15psi Range: True Gage Type Original PDF
    GT2000-20000A-000 Stellar Technology Pressure Sensor: Transmitter: 0 to 20000psi Range: Absolute Type Original PDF
    ...

    GT20 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    GT20G101

    Abstract: No abstract text available
    Text: GT20G101 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT GT20G101(SM) Unit: mm STROBE FLASH APPLICATIONS High Input Impedance Low Saturation Voltage : VCE (sat) = 8V (Max.) (IC = 130A) Enhancement−Mode 20V Gate Drive MAXIMUM RATINGS (Ta = 25°C)


    Original     		PDF GT20G101 2-10S2C

    GT20J311

    Abstract: No abstract text available
    Text: GT20J311 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT20J311 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS l The 3rd Generation l Enhancement−Mode l High Speed : tf = 0.30µs Max. l Low Saturation Voltage : VCE (sat) = 2.7V (Max.)


    Original     		PDF GT20J311 2-16H1A GT20J311

    transistor equivalent 20j321

    Abstract: gt20j321 equivalent 20j321 gt20j321 20j32
    Text: GT20J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT20J321 High Power Switching Applications Fast Switching Applications • • • • • Unit: mm Fourth-generation IGBT Enhancement mode type Fast switching FS : Operating frequency up to 50 kHz (reference)


    Original     		PDF GT20J321 transistor equivalent 20j321 gt20j321 equivalent 20j321 gt20j321 20j32

    1.5 128x128 CSTN LCD

    Abstract: tft 128x128 1.6 TL0350 i8080 TL0350F1 128x128 Transflective LCD LCD 128x128 GT2016 M6800 1.5 128x128 Color LCD
    Text: JEWEL HILL ELECTRONIC CO.,LTD. JEWEL HILL ELECTRONIC CO.,LTD. SPECIFICATIONS FOR LCD MODULE GT2016 Module No. Office Address: Rm. 518,5/F., 101 Shangbu Industrial District, HuaqiangNorthRoad, Shenzhen, China TEL : 86 -755-83362489 83617492 FAX: (86)-755-83286396


    Original     		PDF GT2016 TL0350F1 1.5 128x128 CSTN LCD tft 128x128 1.6 TL0350 i8080 TL0350F1 128x128 Transflective LCD LCD 128x128 GT2016 M6800 1.5 128x128 Color LCD

    GT20G101

    Abstract: No abstract text available
    Text: GT20G101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT GT20G101 Unit: mm STROBE FLASH APPLICATIONS l High Input Impedance l Low Saturation Voltage : VCE sat = 8V (Max.) (IC = 130A) l Enhancement−Mode l 20V Gate Drive MAXIMUM RATINGS (Ta = 25°C)


    Original     		PDF GT20G101 2-10S1C GT20G101

    GT20J101

    Abstract: GT20J301
    Text: GT20J101 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT20J101 High Power Switching Applications • Third-generation IGBT • Enhancement mode type • High speed: tf = 0.30 s max • Low saturation voltage: VCE (sat) = 2.7 V (max)


    Original     		PDF GT20J101 GT20J101 GT20J301

    88E1116

    Abstract: nvidia nforce4 dme1737 nvidia temperature 88E1116-CAA am2 pin temperature socket 940 am2 pin AM2 socket nForce4 B2925
    Text: www.tyan.com Versatile 1U Server Platform Transport GT20 B2925G20V4H Entry 1U Server Platform with AMD Opteron 1000 Socket AM2 Front View(B2925G20V4H) ● Support one AMD Opteron 1000 series processor (AM2 socket) ● Nvidia nForce Pro 3400 ● Four (4) DDR2 DIMMs, supporting max.8GB unbuffered, ECC/non-ECC


    Original     		PDF B2925G20V4H B2925G20V4H) DDR2-533/667/800 Marvell88E1116-CAA 14500rpm 88E1116 nvidia nforce4 dme1737 nvidia temperature 88E1116-CAA am2 pin temperature socket 940 am2 pin AM2 socket nForce4 B2925

    transistor equivalent 20j321

    Abstract: 20J321 gt20j321 equivalent GT20J321 20j32 TOSHIBA IGBT DATA BOOK 2-10R1C
    Text: GT20J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT20J321 High Power Switching Applications Fast Switching Applications • Fourth-generation IGBT • Enhancement mode type • Unit: mm Fast switching FS : Operating frequency up to 50 kHz (reference)


    Original     		PDF GT20J321 transistor equivalent 20j321 20J321 gt20j321 equivalent GT20J321 20j32 TOSHIBA IGBT DATA BOOK 2-10R1C

    GT20J121

    Abstract: gt20j1
    Text: GT20J121 Discrete IGBTs Silicon N-Channel IGBT GT20J121 1. Applications • Dedicated to Current-Resonant Inverter Switching Applications • Dedicated to Partial-Switching Power Factor Correction PFC Applications Note: The product(s) described herein should not be used for any other application.


    Original     		PDF GT20J121 O-220SIS GT20J121 gt20j1

    GT20J301

    Abstract: No abstract text available
    Text: GT20J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT20J301 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Unit: mm z Third-generation IGBT z Enhancement mode type z High speed : tf = 0.30µs Max. z Low saturation voltage


    Original     		PDF GT20J301 GT20J301

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA GT2QG102 SM TO SH IBA INSULATED GATE BIPO LA R TRANSISTOR SILICON N-CHANNEL IGBT GT20G102(S M) STROBE FLASH APPLICATIONS U nit in mm • High Input Impedance « Low Saturation Voltage : V q e (sa t) = 8V (Max.) (l£ = 130A) • Enhancement-Mode •


    OCR Scan     		PDF GT2QG102 GT20G102 2-10S2C

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA GT20G102 TOSHIBA INSULATED GATE BIPO LAR TRANSISTOR SILICON N -CH ANNEL IGBT G T 2 0 G 1 02 U nit in mm STROBE FLASH APPLICATIONS • • • • High Input Impedance Low Saturation Voltage : V c E say = 8V (Max. (Ic = 130A) Enhancement-M ode 12V Gate Drive


    OCR Scan     		PDF GT20G102

    transistor d 4515

    Abstract: Transistor 4515 2-21F1C GT20D101
    Text: TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR GT20D101 SILICON N CHANNEL TYPE HIGH POWER AMPLIFIER APPLICATION Unit in mm . High Breakdown Voltage ¿3.3 ¿0.2 20.5MAX : Vc e s =250V MIN. . High Forward Transfer Admittance : | Yfe | =10S (TYP.) . Complementary to GT20D201


    OCR Scan     		PDF GT20D101 GT20D201 2-21F1C transistor d 4515 Transistor 4515 2-21F1C GT20D101

    T20D201

    Abstract: gt20d201
    Text: TOSHIBA GT20D201 Insulated Gate Bipolar Transistor U nit in m m Silicon P Channel MOS Type High Power Amplifier Application Features • High Breakdown Voltage - VCES = -250V Min • High Forward Transfer Admittance - Yfs' = 10S (Typ.) • Complementary to GT20D101


    OCR Scan     		PDF GT20D201 -250V GT20D101 T20D201 T20D201 gt20d201

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA GT20G101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT G T 2 0 G 1 01 Unit in mm STROBE FLASH APPLICATIONS • • • • 10.3 MAX High Input Impedance Low Saturation Voltage : V0g s a t ~ 8 V (Max.) (Iq = 130A) Enhancement-Mode


    OCR Scan     		PDF GT20G101 TcS70Â

    Untitled

    Abstract: No abstract text available
    Text: 45E D • T0T72SG 0017ÔS1 T ■ T0S4 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR GT20D201 SILICON P CHANNEL TYPE TOSHIBA DISCRETE/OPTO HIGH POWER AMPLIFIER APPLICATION Unit in mm . High Breakdown Voltage 0 3 .3 ± 0.2 20 5 MAX : VcES=-250V (MIN.) . High Forward Transfer Admittance : | Yfe I =10S (TYP.)


    OCR Scan     		PDF T0T72SG GT20D201 -250V GT20D101 0017SSB GT2QD201

    Untitled

    Abstract: No abstract text available
    Text: GT20G101 SM T O S H IB A GT 2 0 G1 01 ( SM) TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT STROBE FLASH APPLICATIONS • • • • High Input Impedance Low Saturation Voltage : V0g (s a t)~ 8 V (Max.) (Iq = 130A) Enhancement-Mode 20V Gate Drive


    OCR Scan     		PDF GT20G101

    Untitled

    Abstract: No abstract text available
    Text: GT20J311 TOSHIBA TENTATIVE TO SH IBA INSULATED GATE BIPO LA R TRANSISTOR SILICON N CHANNEL IGBT GT20J311 HIGH P O W ER SWITCHING APPLICATIONS M OTOR CONTROL APPLICATIONS The 3rd Generation Enhancement-Mode High Speed : t f = 0.30/iS Max. Low Saturation Voltage : V q e ( s a t ) = 2.7V (Max.)


    OCR Scan     		PDF GT20J311 30/iS

    GT20D101

    Abstract: GT20D201 pc180
    Text: 45E D • TCH7250 0017ÔS1 TOSM T ■ TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR - GT20D201 SILICON P CHANNEL TYPE TOSHIBA D IS C R E T E / O P T O HIGH POWER AMPLIFIER APPLICATION Unit in mm V c ES=-250V (MIN.) . High Forward Transfer Admittance I Yfe I =10S (TYP.)


    OCR Scan     		PDF TDT72S0 0017AS1 GT20D101 -250V GT20D201 T-39-31 GT20D101 GT20D201 pc180

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA GT20D201 TO SHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON P C HANN EL TYPE GT2QD201 HIGH POWER AM PLIFIER APPLICATIO N • • • • High Breakdown Voltage : V q e S “ —250V Min. High Forward Transfer Admittance : |Yfe| = 10S (Typ.) Complementary to GT20D10i


    OCR Scan     		PDF GT20D201 GT2QD201 --250V GT20D10i

    cs7e

    Abstract: No abstract text available
    Text: TOSHIBA GT20G102 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT G T2 0 G 10 2(S M) STROBE FLASH APPLICATIONS U nit in mm • High Input Impedance • Low Saturation Voltage : V(j e (5at) = 8V (Max.) (Iq = 130A) • Enhancement-Mode •


    OCR Scan     		PDF GT20G102 2-10S2C cs7e

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA GT20D101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR f ' W i • u n mmr r m n SILICON N CHANNEL TYPE w m ■ Unit in mm HIGH POWER AMPLIFIER APPLICATION 2 0.5 M AX • • • • 0 3 .3 ± O .2 High Breakdown Voltage : V c e £>= 250V Min. High Forward Transfer Admittance : |Y fe|= 10S(Typ.)


    OCR Scan     		PDF GT20D101 GT20D201 F001EAA2'

    Untitled

    Abstract: No abstract text available
    Text: GT20J301 TOSHIBA TENTATIVE TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT20J301 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation Enhancement-Mode High Speed : tf=0.30//s Max. Low Saturation Voltage : V c e (sat) = 2-^^ (Max.)


    OCR Scan     		PDF GT20J301 30//s --100A

    GT20D101

    Abstract: No abstract text available
    Text: SILICON N CHANNEL IGBT GT20D101 HIGH POWER AMPLIFIER APPLICATION Unit in mm . High Breakdown Voltage 20 5 MAX : Vc£g=250V MIN. # 3.3 ±0.2 . High Forward Transfer Admittance : | Yfe | =10S (TYP.) . Complementary to GT20D201 . Enhancement-Mode *\ - 2.5


    OCR Scan     		PDF GT20D101 GT20D201 100mA GT20D101