GT15 Search Results

GT15 Result Highlights (1)

Part	ECAD Model	Manufacturer	Description	Download	Buy
74LV2GT157AUSE-E		Renesas Electronics Corporation	Uni-Logic 74LV-A LVT-A 1G/1GW/2G Series

GT15 Price and Stock

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Kyocera AVX Components 100A270GT150XT CAP CER 27PF 150V P90 0505
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	100A270GT150XT	Digi-Reel	3,871		1	1 $2.02 10 $1.321 100 $0.9485 1000 $0.9485 10000 $0.9485	Buy Now
	100A270GT150XT	Cut Tape	3,871		1	1 $2.02 10 $1.321 100 $0.9485 1000 $0.9485 10000 $0.9485	Buy Now
	100A270GT150XT	Reel	3,500		500	1 - 10 - 100 - 1000 $0.90036 10000 $0.90036	Buy Now
TDK Corporation VGT15SEFD-250S4A7 XFMR FLYBACK AC/DC CONV 2.6UH SM
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	VGT15SEFD-250S4A7	Cut Tape	754		1	1 $12.73 10 $9.406 100 $8.3934 1000 $8.3934 10000 $8.3934	Buy Now
	VGT15SEFD-250S4A7	Digi-Reel	754		1	1 $12.73 10 $9.406 100 $8.3934 1000 $8.3934 10000 $8.3934	Buy Now
	VGT15SEFD-250S4A7	Reel	450		150	1 - 10 - 100 - 1000 $7.025 10000 $7.025	Buy Now
Avnet Americas	VGT15SEFD-250S4A7	Reel	150	20 Weeks	300	1 - 10 - 100 - 1000 $6.85366 10000 $6.85366	Buy Now
TDK Corporation VGT15SEFD-200S1A4 XFMR FLYBACK AC/DC CONV 10UH SMD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	VGT15SEFD-200S1A4	Cut Tape	509		1	1 $11.43 10 $9.268 100 $8.0277 1000 $8.0277 10000 $8.0277	Buy Now
	VGT15SEFD-200S1A4	Digi-Reel	509		1	1 $11.43 10 $9.268 100 $8.0277 1000 $8.0277 10000 $8.0277	Buy Now
	VGT15SEFD-200S1A4	Reel	400		200	1 - 10 - 100 - 1000 $6.61275 10000 $6.61275	Buy Now
Cinch Connectivity Solutions CGT-1500-M0-24M-02 MALE 2.4MM TERMINATION, 50GHZ
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	CGT-1500-M0-24M-02	Box	13		1	1 $285.04 10 $223.7 100 $191.3426 1000 $191.3426 10000 $191.3426	Buy Now
DComponents AMDGT-151509DA50JZ 1W 15V DC/DC CONVERTER
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DigiKey	AMDGT-151509DA50JZ	Tube	6		1	1 $7.45 10 $7.45 100 $7.45 1000 $7.45 10000 $7.45	Buy Now

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GT15 Datasheets (160)

Part	Manufacturer	Description	Datasheet Type	PDF
GT-15	Greenlee Textron	Equipment - Electrical Testers, Current Probes, Test and Measurement, DETECTOR NON CONTACT	Original	PDF
GT15	Thermometrics	GENERAL PURPOSE SENSOR	Original	PDF
GT150L105A	Carlo Gavazzi	Relays - Accessories - TOR LUG 150A 80-105A	Original	PDF
GT150L130A	Carlo Gavazzi	Relays - Accessories - TOR LUG 150A 95-130A	Original	PDF
GT150L150A	Carlo Gavazzi	Relays - Accessories - TOR LUG 150A 110-150A	Original	PDF
GT150S105A	Carlo Gavazzi	Relays - Accessories - TOR SCREW 150A 80-105A	Original	PDF
GT150S130A	Carlo Gavazzi	Relays - Accessories - TOR SCREW 150A 95-130A	Original	PDF
GT150S150A	Carlo Gavazzi	Relays - Accessories - TOR SCREW 150A 110-150A	Original	PDF
GT15-100-100-0.23-0	t-Global Technology	Thermal - Pads, Sheets, Fans, Thermal Management, GT15 SHEET 100X100X0.23MM	Original	PDF
GT15-150-150-0.23-0	t-Global Technology	Thermal - Pads, Sheets, Fans, Thermal Management, GT15 SHEET 150X150X0.23MM	Original	PDF
GT-1515RP2	Soberton	Buzzers, Audio Products, BUZZER 2.73KHZ 1-2V EXT DRV PCB	Original	PDF
GT-1515RP2H	Soberton	Buzzers, Audio Products, BUZZER 2.73KHZ 1-2V EXT DRV PCB	Original	PDF
GT-1515RP3	Soberton	Buzzers, Audio Products, BUZZER 3.1KHZ 1-2V EXT DRV PCB	Original	PDF
GT-1515RP3H	Soberton	Buzzers, Audio Products, BUZZER 3.1KHZ 1-2V EXT DRV PCB	Original	PDF

GT15-2024SCF(70)	Hirose Electric	HID head lamp valve socket; HRS No: 765-0003-1 70; Connector Type: Wire; Contact Gender: Female; Termination Style: Crimping; Current Rating(Amps)(Max.): 1; Contact Mating Area Plating: Tin; Operating Temperature Range (degrees C): -55 to 140; Generic Name: HID Lamp; General Description: Female contact	Original	PDF
GT15-2S	Hirose Electric	HID head lamp valve socket; HRS No: 765-0001-6 00; No. of Positions: 2; Connector Type: Wire; Contact Gender: Female; Current Rating(Amps)(Max.): 1; Operating Temperature Range (degrees C): -55 to 140; Generic Name: HID Lamp; General Description: Housing	Original	PDF
GT15-2S(45)	Hirose Electric	HID head lamp valve socket; HRS No: 765-0001-6 45; No. of Positions: 2; Connector Type: Wire; Contact Gender: Female; Current Rating(Amps)(Max.): 1; Operating Temperature Range (degrees C): -55 to 140; Generic Name: HID Lamp; General Description: Housing	Original	PDF
GT15-2S-F	Hirose Electric	HID head lamp valve socket; HRS No: 765-0002-9 00; No. of Positions: 2; Operating Temperature Range (degrees C): -55 to 140; Generic Name: HID Lamp; General Description: Accessory; Cover	Original	PDF
GT153	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF
GT15-300-300-0.23-0	t-Global Technology	Thermal - Pads, Sheets, Fans, Thermal Management, GT15 SHEET 300X300X0.23MM	Original	PDF

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GT15 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
TRANSISTOR 15J321 Abstract: 15j321 RG105 Text: GT15J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT15J321 High Power Switching Applications Fast Switching Applications • Fourth-generation IGBT • Fast switching FS • Enhancement mode type • High speed: tf = 0.03 µs (typ.	Original	PDF	GT15J321 TRANSISTOR 15J321 15j321 RG105
Untitled Abstract: No abstract text available Text: GT15M321 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT15M321 HIGH POWER SWITCHING APPLICATIONS Unit: mm z Fourth-generation IGBT z FRD included between emitter and collector z Enhancement mode type z High speed : tf = 0.20 µs TYP. (IC = 15 A)	Original	PDF	GT15M321 2-16F1A
15j331 Abstract: No abstract text available Text: GT15J331 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT15J331 High Power Switching Applications Motor Control Applications • Fourth-generation IGBT • Enhancement mode type • High speed: tf = 0.10 µs typ. • Low saturation voltage: VCE (sat) = 1.75 V (typ.)	Original	PDF	GT15J331 2-10HIBA 15j331
VF50 Abstract: No abstract text available Text: GT15Q311 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT15Q311 High Power Switching Applications Motor Control Applications • The 3rd generation • Enhancement-mode • High speed: tf = 0.32 µs max • Low saturation voltage: VCE (sat) = 2.7 V (max)	Original	PDF	GT15Q311 2-16H1A VF50
GT15Q301 Abstract: No abstract text available Text: GT15Q301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT15Q301 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Unit: mm z Third-generation IGBT z Enhancement mode type z High speed : tf = 0.32 s Max. z Low saturation voltage	Original	PDF	GT15Q301 GT15Q301
GT15Q102 Abstract: GT15Q301 Text: GT15Q102 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT15Q102 High Power Switching Applications Unit: mm • The 3rd Generation · Enhancement-Mode · High Speed: tf = 0.32 µs max · Low Saturation Voltage: VCE (sat) = 2.7 V (max) Maximum Ratings (Ta = 25°C)	Original	PDF	GT15Q102 2-16C1C 2002-01-18transportation GT15Q102 GT15Q301
GT15J331 Abstract: No abstract text available Text: GT15J331 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT15J331 High Power Switching Applications Motor Control Applications • The 4th Generation • Enhancement-Mode • High Speed: tf = 0.10 µs typ. • Low Saturation Voltage: VCE (sat) = 1.75 V (typ.)	Original	PDF	GT15J331 GT15J331
2-10R1C Abstract: GT15J321 Text: GT15J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT15J321 High Power Switching Applications Fast Switching Applications • The 4th generation • FS fast switching • Enhancement-mode • High speed: tf = 0.03 µs (typ.) • Low saturation Voltage: VCE (sat) = 1.90 V (typ.)	Original	PDF	GT15J321 2-10R1C GT15J321
GT15Q102 Abstract: GT15Q301 Text: GT15Q102 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT Preliminary GT15Q102 High Power Switching Applications Unit: mm • The 3rd Generation • Enhancement-Mode • High Speed: tf = 0.32 µs max • Low Saturation Voltage: VCE (sat) = 2.7 V (max)	Original	PDF	GT15Q102 2-16C1C GT15Q102 GT15Q301
toshiba Ta Abstract: GT15M321 Text: GT15M321 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT15M321 Unit: mm HIGH POWER SWITCHING APPLICATIONS Fourth-generation IGBT FRD included between emitter and collector Enhancement mode type High speed : tf = 0.20 µs TYP. (IC = 15 A)	Original	PDF	GT15M321 toshiba Ta GT15M321
GT15M321 Abstract: No abstract text available Text: GT15M321 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT15M321 Unit: mm HIGH POWER SWITCHING APPLICATIONS The 4th Generation FRD Included Between Emitter and Collector Enhancement−Mode High Speed : tf = 0.20 µs TYP. (IC = 15 A) Low Saturation Voltage	Original	PDF	GT15M321 GT15M321
15j301 Abstract: transistor 15j301 GT15J301 2-10R1C Text: GT15J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT15J301 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Third-generation IGBT Enhancement mode type High speed : tf = 0.30µs Max. (IC = 15A) Low saturation voltage	Original	PDF	GT15J301 15j301 transistor 15j301 GT15J301 2-10R1C
GT15J341 Abstract: No abstract text available Text: GT15J341 Discrete IGBTs Silicon N-Channel IGBT GT15J341 1. Applications • Motor Drivers 2. Features 1 Sixth generation (2) Low saturation voltage: VCE(sat) = 1.5 V (typ.) (IC = 15 A) (3) FRD included between emitter and collector 3. Packaging and Internal Circuit	Original	PDF	GT15J341 O-220SIS GT15J341
GT15Q101 Abstract: No abstract text available Text: GT15Q101 HIGH POWER SWITCHING APPLICATIONS. Unit in mm #3 2±0.2 MOTOR CONTROL APPLICATIONS. I5.9MAX . High Input Impedance . High Speed : tf= 0 . 5ys Max. . Low Saturation Voltage : VcE(sat)=4.0V(Max.) . Enhancement-Mode I1AXIMUM RATINGS (Ta=25°C) SYMBOL	OCR Scan	PDF	GT15Q101 2-16C1C GT15Q101

Untitled Abstract: No abstract text available Text: TO SHIBA GT15J101 TO SHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N -CH ANN EL IGBT G T 1 5 J 1 01 Unit in mm HIGH POWER SW ITCHING APPLICATIONS 1 5 .9 M A X M O TO R CONTROL APPLICATIONS • • • • ;S3.2 ± 0 .2 m High Input Impedance High Speed : tf=0.35/*s Max.	OCR Scan	PDF	GT15J101
GT15N101 Abstract: No abstract text available Text: INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT GT15N101 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. Unit in mm 15.9 MAX 02 l2±O.2 . High Input Impedance . High Speed : tf=1 *O y s M a x , . Low Saturation Voltage : V c e (s a t ) ~ 5•0 V ( M a x .)	OCR Scan	PDF	GT15N101 GT15N101
GT15Q301 Abstract: No abstract text available Text: TOSHIBA GT15Q301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT15Q301 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation Enhancement-Mode High Speed : tf = 0.32 jus Max. Low Saturation Voltage : V qe (sa^) = 2.7 V (Max.)	OCR Scan	PDF	GT15Q301 GT15Q301
Untitled Abstract: No abstract text available Text: TO SHIBA GT15J102 TO SHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N -CH ANN EL IGBT G T 15 J 1 0 2 Unit in mm HIGH POWER SW ITCHING APPLICATIONS M O TO R CONTROL APPLICATIONS 10 ± 0 .3 • • • • High Input Impedance High Speed : tf=0.35/*s Max.	OCR Scan	PDF	GT15J102
Untitled Abstract: No abstract text available Text: GT15J102 HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. 10±0.3 0 3 2 ± 0 2 2.7 ±0.2 . High Input Impedance . High Speed : tf=0.35ys Max. . Low Saturation Voltage : VcE(sat)=4•0V(Max.) . Enhancement-Mode MAXIMUM RATINGS (Ta=25°C)	OCR Scan	PDF	GT15J102
Untitled Abstract: No abstract text available Text: T O SH IB A GT15Q301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT fiT iin ? n i HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation Enhancement-Mode High Speed : tf = 0.32 /¿s Max. Low Saturation Voltage : V q e (sat) = 2.7 V (Max.)	OCR Scan	PDF	GT15Q301
GT15Q301 Abstract: No abstract text available Text: TO SH IBA GT15Q301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT15Q301 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation Enhancement-Mode High Speed : tf = 0.32 jus Max. Low Saturation Voltage : V qe (sa^) = 2.7 V (Max.)	OCR Scan	PDF	GT15Q301 GT15Q301
gt15j101 Abstract: No abstract text available Text: GT15J101 TOSHIBA TO SH IBA INSULATED GATE BIPO LA R TRANSISTOR SILICON N-CHANNEL IGBT G T 1 5 J 1 01 U nit in mm HIGH PO W E R SWITCHING APPLICATIONS 1 5.9 M A X M O TO R CONTROL APPLICATIONS • • • • H igh Input Impedance H igh Speed : tf= 0 .3 5 //s Max.	OCR Scan	PDF	GT15J101 50//s gt15j101
LTSG Abstract: gt15j101 Text: INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT HIGH GT15J101 POWER SWITCHING APPLICATIONS. U n it in nun MOTOR CONTROL A P PL IC AT IO NS. High In p u t Impedance High Speed Low S a t u r a t i o n V oltag e Enhancement-Mode 1 5 .9 MAX . 0 3 .2 ± 0 .2	OCR Scan	PDF	GT15J101 35fjs LTSG gt15j101
Untitled Abstract: No abstract text available Text: TO SHIBA GT15J102 TO SHIBA INSULATED GATE BIPOLAR TRANSISTOR G T 1 5 J 1 SILICON N -CH ANN EL IGBT 2 Unit in mm HIGH POWER SW ITCHING APPLICATIONS M O TO R CONTROL APPLICATIONS 10 ± 0 .3 • • • • High Input Impedance High Speed : tf=0.35/*s Max.	OCR Scan	PDF	GT15J102

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GT15 Search Results

GT15 Result Highlights (1)

GT15 Price and Stock

Kyocera AVX Components 100A270GT150XT

TDK Corporation VGT15SEFD-250S4A7

TDK Corporation VGT15SEFD-200S1A4

Cinch Connectivity Solutions CGT-1500-M0-24M-02

DComponents AMDGT-151509DA50JZ

GT15 Datasheets (160)

GT15 Datasheets Context Search

TRANSISTOR 15J321

Untitled

15j331

VF50

GT15Q301

GT15Q102

GT15J331

2-10R1C

GT15Q102

toshiba Ta

GT15M321

15j301

GT15J341

GT15Q101

Untitled

GT15N101

GT15Q301

Untitled

Untitled

Untitled

GT15Q301

gt15j101

LTSG

Untitled