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    s13002

    Abstract: transistor 8522
    Text: MOTOROLA O rder this docum ent by M G S13002D/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet GS13002D Insulated G ate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate T his IG BT con tain s a b u ilt-in free w h ee lin g diod e and a gate


    OCR Scan     		PDF S13002D/D s13002 transistor 8522

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    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet GS13002D Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate T h is IG B T contains a built-in free w heeling diode and a gate protection zen er diodes. F ast sw itching characteristics result in


    OCR Scan     		PDF MGS13002D GS13002D 0E-05 0E-04 0E-03 0E-02 OE-01

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by GS13002D/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet GS13002D Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate This IGBT contains a b uilt-in free wheeling diode and a gate protection zener diodes. Fast switching characteristics result in


    OCR Scan     		PDF MGS13002D/D MGS13002D