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    GS 7103 Search Results

    GS 7103 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    PFL4517-103 Coilcraft Inc General Purpose Inductor Visit Coilcraft Inc
    PCH-27-103L Coilcraft Inc General Purpose Inductor, 10uH, 10%, 1 Element, AXIAL LEADED, ROHS COMPLIANT Visit Coilcraft Inc
    PFL4517-103MEB Coilcraft Inc General Purpose Inductor, 10uH, 20%, 1913, Visit Coilcraft Inc
    PFL4517-103ME Coilcraft Inc Power inductor, shielded, 20% tol, SMT, RoHS, halogen-f Visit Coilcraft Inc
    RFB0807-103L Coilcraft Inc General Purpose Inductor, 10000uH, 10%, 1 Element, Ferrite-Core, ROHS COMPLIANT Visit Coilcraft Inc
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    GS 7103 Price and Stock

    Samtec Inc ZW-13-14-G-S-710-325

    Conn Board Stacker HDR 13 POS 2.54mm Solder ST Thru-Hole - Bulk (Alt: ZW-13-14-G-S-710-3)
    Free Sample
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    Master Electronics ZW-13-14-G-S-710-325
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    TAIYO YUDEN MCASU21GSB7103KTNA01

    Multilayer Ceramic Capacitors MLCC - SMD/SMT 50V 0.01uF X7R 0805 10% AEC-Q200
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    Mouser Electronics MCASU21GSB7103KTNA01
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    TAIYO YUDEN MSASH21GSB7103KTNA01

    Multilayer Ceramic Capacitors MLCC - SMD/SMT 100V 0.01uF X7R 0805 10%
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    Mouser Electronics MSASH21GSB7103KTNA01
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    TAIYO YUDEN MCASH21GSB7103KTNA01

    Multilayer Ceramic Capacitors MLCC - SMD/SMT 100V 0.01uF X7R 0805 10% AEC-Q200
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    Mouser Electronics MCASH21GSB7103KTNA01
    • 1 $0.22
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    • 10000 $0.036
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    TAIYO YUDEN MSASQ21GSB7103KTNA01

    Multilayer Ceramic Capacitors MLCC - SMD/SMT 250V 0.01uF X7R 0805 10%
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    Mouser Electronics MSASQ21GSB7103KTNA01
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    Find more GS 7103 price and stock on Findchips.com

    GS 7103 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    LD2SA

    Abstract: BTS 308 INTEL I7 prefetch MSR 7A SF fds 4418 STi 5197 register configuration instruction set architecture intel i7 wn 537 a 8086 mnemonic opcode intel 8086
    Text: Intel IA-64 Architecture Software Developer’s Manual Volume 3: Instruction Set Reference Revision 1.1 July 2000 Document Number: 245319-002 THIS DOCUMENT IS PROVIDED “AS IS” WITH NO WARRANTIES WHATSOEVER, INCLUDING ANY WARRANTY OF MERCHANTABILITY,


    Original     		PDF IA-64 IA-32 LD2SA BTS 308 INTEL I7 prefetch MSR 7A SF fds 4418 STi 5197 register configuration instruction set architecture intel i7 wn 537 a 8086 mnemonic opcode intel 8086

    Untitled

    Abstract: No abstract text available
    Text: TN2640 Supertex Inc. Low Threshold Preliminary N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package R d S ON V GS(th) '□(ON) «C s (max) (max) (min) SO-8 TO-92 Diet 400V 5.0fi 2.0V 2.0A TN2640LG TN2640N3 TN2640ND M IL visual screening available.


    OCR Scan     		PDF TN2640 TN2640LG TN2640N3 TN2640ND

    Untitled

    Abstract: No abstract text available
    Text: TN2640 Supertex inc. Low Threshold Preliminary N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package b v dss/ ^DS ON ^GS(th) I d (ON) b v dgs (max) (max) (min) SO-8 TO-92 Diet 400V 5.0Q. 2.0V 2.0A TN 2640LG T N 2640N 3


    OCR Scan     		PDF TN2640 2640LG 2640N

    DM-350D1

    Abstract: Regulated Power supply using 7805 7805 CHECKING DM-350A1 DM-350A2 LM309K DM-350 DATEL DM-350A2 DM350 viking connector 15 pin
    Text: □ATEL SYSTEMS, INC. 31/2 digit m in ia t u r e LOW COST DIGITAL PANEL METER E tra c t No. GS-OO S-27959 Large 0.43” 11 mm LED Display Very Low Cost, $69. Choice o f U nipolar or Bipolar 1.999V Ranges Choice o f AC or 5VDC Power Supply Very Low Power C onsum ption fo r Por­


    OCR Scan     		PDF DM-350 DM-350D1 DM-350D2 DM-350A1 DM-350A2 3VH18/1 M35-N05603 DM-350D1 Regulated Power supply using 7805 7805 CHECKING DM-350A1 DM-350A2 LM309K DATEL DM-350A2 DM350 viking connector 15 pin

    TELEDYNE CRYSTALONICS

    Abstract: 50T60 CAG50
    Text: G E N E R A L PURPOSE CAG 50D CAG 50T FET ANALOG GATE QUAD SPST 60 OHM M A X . Ron WORKS D IR E C TLY FROM LOGIC HIGH LOGIC NOISE IM M U N IT Y BR E AK BEFORE M AKE ACTION ± 10V S IG N A L LEVELS AC OR DC M A X IM U M RATIN GS PAR AM ETER S YM BO L M IN .


    OCR Scan     		PDF CAG50 TELEDYNE CRYSTALONICS 50T60

    CP650

    Abstract: CP651 2N4448 2N4445 Crystalonics TELEDYNE teledyne crystalonics CP652 CP653
    Text: CP650 CP651 CP652 CP653 PO W RFET SILICON E P IT A X IA L JUNCTION N-CHANNEL FIELD EFFECT TRANSISTORS GEOMETRY 424, PG. 58 • • • • LOW R d s - 5 Ohms TYPICAL LOW Cgd - 20 pfd TYPICAL HIGH lDSS - 0.5 Amp TYPICAL HIGH gm 150,000 /xmhos TYPICAL ELECTRICAL DATA


    OCR Scan     		PDF CP650 CP651 CP652 CP653 CP653 2N4448 2N4445 Crystalonics TELEDYNE teledyne crystalonics

    2N6568

    Abstract: Crystalonics TELEDYNE CRYSTALONICS teledyne transistor
    Text: ULTRA LOW Ro n SWITCHING SILICON EPITAXIAL JUNCTION N-CHANNEL FIELD EFFECT TRANSISTOR G E O M E T R Y 4 5 6 , PG. 59 • LOW Rds - TA Ohms MAXIMUM • HIGH l DSS- 5 0 0 mA MINIMUM ELECTRICAL DATA A B S O LU TE M A X IM U M R A T IN G S PAR A M E TE R SYM BOL


    OCR Scan     		PDF lDSS-500 2N6568 2N6568 Leaka10V, Crystalonics TELEDYNE CRYSTALONICS teledyne transistor

    TP2504N8

    Abstract: A773 A773* Transistor P024 TP2502 TP2502ND TP2504ND 43AA
    Text: S u p e r te x in c TP2502 TP2504 . Low Threshold Preliminary P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information B V oss/ R d S<ON ^ G S ith ) B V dgs max) (m ax) -20V 2.0Q -2.4V -40V 2.0CÌ -2.4V W n) (min) Order Num ber / Package TO-243AA*


    OCR Scan     		PDF TP2502 TP2504 O-243AA* TP2502ND TP2504N8 TP2504ND OT-89. 000451b A773 A773* Transistor P024 TP2502ND TP2504ND 43AA

    TELEDYNE CRYSTALONICS

    Abstract: 2N4447 2N4445 cgel CP650 2N4448 CP653 N4446 2n4446
    Text: CP650 thru CP653 2N4445 thru 2N4448 TYPICAL CHARACTERISTICS GATE LEAKAGE CURRENT VS. TEMPERATURE < > o ►O < i o oc Z -20 - -2 5 +50 TEMPERATURE Ro~ INCREASES +75 too -120 (°C TEMPERATURE 0 .7 % / ° C I gss JUNCTION CAPACITANCE VS. VOLTAGE (°Q DOUBLES EACH !0 ° C


    OCR Scan     		PDF CP650 CP653 2N4445 2N4448 TELEDYNE CRYSTALONICS 2N4447 cgel 2N4448 N4446 2n4446

    2N5543

    Abstract: 2N5544
    Text: HIGH VOLTAGE 2N5543 2N5544 SILICON EPITAXIAL JUNCTION N-CHANNEL FIELD EFFECT TRANSISTORS GEOMETRY 559, PG. 60 FEATURES • HIGH BV[ GO> 300V 2N5543) • LOW CAPACITANCE APPLICATIONS • HIGH VOLTAGE CURRENT SOURCE • HIGH VOLTAGE SWITCH ELECTRICAL DATA ABSOLUTE M AXIM U M RATINGS


    OCR Scan     		PDF 2N5543 2N5544 2N5543) 2N5544

    foto transistor

    Abstract: FF626 teledyne transistor phototube
    Text: FOTO F E T SILICON E P ITA X IA L JUNCTION N-CHANNEL FIELD EFFECT TRANSISTOR GEOMETRY 400, PG. 57 • • • • ULTRA HIGH SENSITIVITY LOW DARK CURRENT FAST RESPONSE PHOTOTUBE REPLACEMENT ELECTRICAL DATA A B S O L U T E M A X IM U M R A T IN G S D rain to Source V olta ge


    OCR Scan     		PDF 400mW CHARACTERISTICS00 foto transistor FF626 teledyne transistor phototube

    gs 7103

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FS30UMH-3 HIGH-SPEED SWITCHING USE FS30UMH-3 • 2.5V DRIVE • VDSS . 150V • rDS ON (MAX) .87mQ • Id .


    OCR Scan     		PDF FS30UMH-3 100ns gs 7103

    fotofet

    Abstract: ALG TRANSISTOR FF412
    Text: FO TO FET SILICON EPITAXIAL JUNCTION N-CHANNEL FIELD EFFECT TRANSISTOR GEOMETRY 446, PG. 58 • • • • HIGH SENSITIVITY LOW DARK CURRENT FAST RESPONSE LOW Ron ELECTRICAL DATA 4 270 MAX. A B S O LU TE M A X IM U M R A T IN G Drain to Source Voltage


    OCR Scan     		PDF 300mW fotofet ALG TRANSISTOR FF412

    2N6449

    Abstract: CISS2 2N6450
    Text: HIGH VOLTAGE 2N6449 2N6450 SILICON E PI TA X IA L JUNCTION N-CHANNEL FIELD EFFECT TRANSISTORS G E O M E T R Y 5 5 9 , PG. 6 0 TO-39 Package • HIGH BV qss • • •300V MIN 2N6449 • HIGH POWER RATING . . . 5W ELECTRICAL DATA 00370 350dia 0 ^ 1 5 DIA


    OCR Scan     		PDF 2N6449 2N6450 2N6449) 2N6450 -100V, -10juA, 300/us, CISS2

    foto transistor

    Abstract: FF627
    Text: FOTO F ET ! SILICON EPITAXIAL JUNCTION N-CHANNEL FIELD EFFECT TRANSISTOR G E O M E T R Y 400, PG. 57 • • • • • ULTRA HIGH SENSITIVITY LOW DARK CURRENT FAST RESPONSE PHOTOTUBE REPLACEMENT FLAT GLASS TOP FOR EXTERNAL OPTICS ELECTRICAL DATA ,270 M A X .


    OCR Scan     		PDF 400mW foto transistor FF627

    e304 fet

    Abstract: JFET TRANSISTOR REPLACEMENT GUIDE j201 bfq13 e420 dual jfet JFET TIS88 Siliconix FET Design Catalog E112 jfet jfet e300 BFW10 JFET 2N3686
    Text: January 1986 Small-Signal FET Data Book Slliconix incorporated reserves the right to make changes in the circuitry or specifications at any time without notice and assumes no responsibility for the use of any circuits described herein and makes no representations that


    OCR Scan     		PDF K28742 44449SILXHX e304 fet JFET TRANSISTOR REPLACEMENT GUIDE j201 bfq13 e420 dual jfet JFET TIS88 Siliconix FET Design Catalog E112 jfet jfet e300 BFW10 JFET 2N3686

    siliconix fet

    Abstract: Transistor E112 FET N-Channel JFET TRANSISTOR REPLACEMENT GUIDE j201 E112 jfet jfet bfw10 terminals JFET BFW10 SPECIFICATIONS 4856a mosfet Transistor E112 FET FETs in Balanced Mixers Ed Oxner equivalent components FET BFW10
    Text: s S ilic o n ix FET Design Catalog 1979 Siliconix incorporated Printed in U.S.A. Siliconix incorporated reserves the right to make changes in the circuitry or specifications in this book at any time w ithout notice. Siliconix incorporated assumes no responsibility


    OCR Scan     		PDF J-23548 K24123 i39-40i NZ3766 53-C-03 siliconix fet Transistor E112 FET N-Channel JFET TRANSISTOR REPLACEMENT GUIDE j201 E112 jfet jfet bfw10 terminals JFET BFW10 SPECIFICATIONS 4856a mosfet Transistor E112 FET FETs in Balanced Mixers Ed Oxner equivalent components FET BFW10

    MOSFET 20 NE 50 Z

    Abstract: 500v n channel
    Text: MITSUBISHI Neh POWER MOSFET FS14SM-10 |_ HIGH-SPEED SWITCHING USE FS14SM-10 OUTLINE DRAWING 15.9MAX. • VDSS . 500V • rDS O N (M AX ) 1 I. 3, 4


    OCR Scan     		PDF FS14SM-10 MOSFET 20 NE 50 Z 500v n channel

    2N5114

    Abstract: 2N5115 field effect transistors TELEDYNE CRYSTALONICS
    Text: SWITCHING 2N5114 2N5115 P-CHANNEL FIELD EFFECT TRANSISTORS G E O M E T R Y 4 60, PG. 60 For Analog Switch, Commutators and Choppers ABSOLUTE M AXIM UM RATINGS PAR A M E TE R SYM BOL MAX. U N IT Gate to Drain Voltage BVgdo 30 V Gate to Source Voltage B V gso


    OCR Scan     		PDF 2N5114 2N5115 2N5114 2N5115= 2N5115 field effect transistors TELEDYNE CRYSTALONICS

    44i2

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET j FS3UM-10 j HIGH-SPEED SWITCHING USE I FS3UM-10 • VOSS . 500V • ros ON (MAX) . 4.4Í2


    OCR Scan     		PDF FS3UM-10 FS3UM-10 5711K2 44i2

    CP643

    Abstract: Field Effect Transistor TMF18
    Text: PO W RFET SILICON EP IT AX IA L JUNCTION N-CHANNEL FIELD EFFECT TRANSISTOR GEOMETRY 446, PG. 58 • FOR HIG H D Y N A M IC RANGE R.F. A M P LIFIE R S • SPECIFIED FOR H.F. BAND - USEABLE TH R U 500 MHz • LOW NOISE FIG URE D IR E C T FROM 50 Ohm L IN E 2


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FS50VS-03 HIGH-SPEED SWITCHING USE FS50VS-03 OUTLINE DRAWING I q J w e Q w r 10V DRIVE rDS ON (MAX). 23m i2 . 50A


    OCR Scan     		PDF FS50VS-03 O-220S

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FS70VS-03 HIGH-SPEED SWITCHING USE FS70VS-03 OUTLINE DRAWING I q J w e Q w r o +i CO C\i q w e r 10V D R IV E V d s s . 3 0 V Dimensions in mm q o -


    OCR Scan     		PDF FS70VS-03 O-220S

    Untitled

    Abstract: No abstract text available
    Text: TELEDYNE COMPONENTS 2flE 0*il7fciQ2 OGObSS? a • T> -T ' 3 5 ' a s VERY LOW Ro n SWITCHING CM 697 SILICON EPITAXIAL JUNCTION N-CHANNEL FIELD EFFECT TRANSISTOR GEOMETRY 448-1 .230 MAX. .185 ±.005- • LOW RDS - 150hms MAXIMUM • LOW Vp - 3 Volts MAXIMUM


    OCR Scan     		PDF 150hms CM697