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    Murata Manufacturing Co Ltd GRM55ER72A475KA01L

    CAP CER 4.7UF 100V X7R 2220
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    DigiKey GRM55ER72A475KA01L Reel
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    GRM55ER72A475KA01L Digi-Reel 1
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    GRM55ER72A475KA01L Cut Tape 1
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    Verical GRM55ER72A475KA01L 1,998 48
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    Future Electronics GRM55ER72A475KA01L Reel 500
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    Bristol Electronics GRM55ER72A475KA01L 5,557
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    GRM55ER72A475KA01L 859
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    Quest Components GRM55ER72A475KA01L 687
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    GRM55ER72A475KA01L 520
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    GRM55ER72A475KA01L 372
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    GRM55ER72A475KA01L 247
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    GRM55ER72A475KA01L 231
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    GRM55ER72A475KA01L 176
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    GRM55ER72A475KA01L 100
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    GRM55ER72A475KA01L 18
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    GRM55ER72A475KA01L 5
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    TTI GRM55ER72A475KA01L Reel 27,000 500
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    GRM55ER72A475KA01L Cut Tape 4,300 10
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    TME GRM55ER72A475KA01L 1,998 1
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    ComSIT USA GRM55ER72A475KA01L 6,000
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    Velocity Electronics GRM55ER72A475KA01L 74
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    Chip 1 Exchange GRM55ER72A475KA01L 470
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    Avnet Abacus GRM55ER72A475KA01L Reel 23,500 19 Weeks 500
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    Component Electronics, Inc GRM55ER72A475KA01L 550
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    Win Source Electronics GRM55ER72A475KA01L 2,528
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    Others GRM55ER72A475KA01L

    CERAMIC CAPACITOR, MULTILAYER, CERAMIC, 100V, 10% +TOL, 10% -TOL, X7R, 15% TC, 4.7UF, SURFACE MOUNT, 2220
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components GRM55ER72A475KA01L 392
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    • 1000 $1.4153
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    Chip-Germany GmbH GRM55ER72A475KA01L 828
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    GRM55ER72A475KA01L Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    GRM55ER72A475KA01L muRata Ceramic Capacitors, Capacitors, CAP CER 4.7UF 100V 10% X7R 2220 Original PDF

    GRM55ER72A475KA01L Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor 1800MHz

    Abstract: r.f. amplifier 30mhz
    Text: RF3826 RF3826 30MHz to 2500MHz, 9W GaN Wideband Power Amplifier 30MHz TO 2500MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features  Advanced GaN HEMT Technology  Output Power of 9W  Advanced Heat-Sink Technology


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    PDF RF3826 30MHz 2500MHz, 2500MHz 2500MHz) transistor 1800MHz r.f. amplifier 30mhz

    EI -40C

    Abstract: No abstract text available
    Text: RF3933 90W GaN WIDE-BAND POWER AMPLIFIER Package: Hermetic 2-Pin Flanged Ceramic Features      Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat Sink Technology Small Signal Gain = 21dB at 0.9GHz 48V Operation Typical


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    PDF RF3933 DS120306 EI -40C

    GRF31CR72A105KA01L

    Abstract: grm43er61a476ke19l grm31cr60j226ke19l GRM31CR72E104KW03L GRM31CR71E475KA88L GRM31MR72A474KA35L GRM31CR60J476ME19L 3216 capacitor GRF32ER72A225KA11L X7R 1KV
    Text: C44E1.pdf 04.4.6 Chip Monolithic Ceramic Capacitors for DC-DC Converters Chip Monolithic Ceramic Capacitors for DC-DC Converters C44E1.pdf 04.4.6 Murata's extensive and complete chip capacitor line up enables your DC-DC converters and voltage regulators to be compact and high performanced.


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    PDF C44E1 GRF31CR72A105KA01L grm43er61a476ke19l grm31cr60j226ke19l GRM31CR72E104KW03L GRM31CR71E475KA88L GRM31MR72A474KA35L GRM31CR60J476ME19L 3216 capacitor GRF32ER72A225KA11L X7R 1KV

    Untitled

    Abstract: No abstract text available
    Text: RFG1M09180 RFG1M09180 700MHZ to 1000MHZ 180W GaN 700MHZ TO 1000MHZ 180W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2-pin, RF400-2 Features  Advanced GaN HEMT Technology  Typical Peak Modulated Power >240W  Advanced Heat Sink Technology  Single Circuit for 865MHz To


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    PDF RFG1M09180 700MHZ 1000MHZ 1000MHZ RF400-2 865MHz 960MHz 47dBm

    Untitled

    Abstract: No abstract text available
    Text: RFG1M09090 700MHZ to 1000MHZ 90W GaN RFG1M09090 Proposed 700MHZ TO 1000MHZ 90W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2-pin, RF400-2 Features      Advanced GaN HEMT Technology Typical Peak Modulated Power >120W Advanced Heat-Sink Technology


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    PDF RFG1M09090 700MHZ 1000MHZ RFG1M09090 RF400-2 865MHz 960MHz 44dBm

    rf3826

    Abstract: ERJ-3GEYJ821 ERJ-3GEYJ391 transistor 1800MHz
    Text: RF3826 RF3826 30MHz to 2500MHz, 9W GaN Wideband Power Amplifier 30MHz TO 2500MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features  Advanced GaN HEMT Technology  Output Power of 9W  Advanced Heat-Sink Technology


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    PDF RF3826 30MHz 2500MHz, RF3826 2500MHz 2500MHz) ERJ-3GEYJ821 ERJ-3GEYJ391 transistor 1800MHz

    RFHA1000

    Abstract: No abstract text available
    Text: RFHA1000 RFHA1000 50MHz to 1000MHz, 15W GaN Wideband Power Amplifier 50MHz TO 1000MHz, 15W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features  Advanced GaN HEMT Technology  Output Power of 15W  Advanced Heat-Sink Technology


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    PDF RFHA1000 50MHz 1000MHz, RFHA1000 1000MHz DS121114

    RFG1M20180

    Abstract: ATC800B820JT
    Text: RFG1M20180 RFG1M20180 1.8GHZ to 2.2GHZ 180W GaN 1.8GHZ TO 2.2GHZ 180W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2-pin, RF400-2 Features      Advance GaN HEMT Technology Typical Peak Modulated Power > 180W Advanced Heat-Sink Technology Single Circuit for 1.8GHz to


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    PDF RFG1M20180 RFG1M20180 RF400-2 -36dBc -55dBc DS120418 ATC800B820JT

    Untitled

    Abstract: No abstract text available
    Text: RFHA1042 RFHA1042 225MHz to 450MHz 125W GaN Power Amplifier 225MHz TO 450MHz 125W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2-Pin, RF400-2 Features  Advanced GaN HEMT Technology  Peak Power 125W Wideband  Single Circuit for 225 - 450MHz  48V Modulated Typical


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    PDF RFHA1042 225MHz 450MHz RFHA1042 RF400-2 -26dBc

    RFG1M20180SB

    Abstract: j35 fet RFG1M20180SQ
    Text: RFG1M20180 RFG1M20180 1.8GHZ to 2.2GHZ 180W GaN 1.8GHZ TO 2.2GHZ 180W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2-pin, RF400-2 Features      Advance GaN HEMT Technology Typical Peak Modulated Power > 180W Advanced Heat-Sink Technology Single Circuit for 1.8GHz to


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    PDF RFG1M20180 RFG1M20180 RF400-2 -38dBc -55dBc DS120803 RFG1M20180SB j35 fet RFG1M20180SQ

    Untitled

    Abstract: No abstract text available
    Text: RF3931 30W GaN WIDEBAND POWER AMPLIFIER Package Style: Hermetic 2-Pin Flanged Ceramic Features      Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Gain = 15dB at 2GHz 48V Operation Typical Performance at 900MHz


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    PDF RF3931 900MHz EAR99 RF3931 DS120306

    Untitled

    Abstract: No abstract text available
    Text: RF3934 120W GaN WIDEBAND POWER AMPLIFIER Package: Hermetic 2-Pin Flanged Ceramic Features      Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Small Signal Gain = 13dB at 2GHz 48V Operation Typical


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    PDF RF3934 RF3934 DS120306

    Untitled

    Abstract: No abstract text available
    Text: RFHA1003 RFHA1003 30MHz to 512MHz, 9W GaN Wideband Power Amplifier 30MHz TO 512MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features  Advanced GaN HEMT Technology  Output Power of 9W  Advanced Heat-Sink Technology


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    PDF RFHA1003 30MHz 512MHz, RFHA1003 512MHz DS120216

    404j

    Abstract: rf3826 transistor 1800MHz 100A0R9BT150X
    Text: RF3826 RF3826 30MHz to 2500MHz, 9W GaN Wideband Power Amplifier 30MHz TO 2500MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features  Advanced GaN HEMT Technology  Output Power of 9W  Advanced Heat-Sink Technology


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    PDF RF3826 30MHz 2500MHz, RF3826 2500MHz 2500MHz) 404j transistor 1800MHz 100A0R9BT150X

    Untitled

    Abstract: No abstract text available
    Text: RFG1M20180 RFG1M20180 1.8 GHZ to 2.2GHZ 180W GaN 1.8GHZ TO 2.2GHZ 180W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2-pin, RF400-2 Features      Advance GaN HEMT technology Typical peak modulated power>180W Advanced heat-sink technology Single circuit for 1.8GHz to


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    PDF RFG1M20180 RFG1M20180 RF400-2 -36dBc -55dBc DS110406

    GRM55ER72A475KA01L

    Abstract: RF3934 DS111005 GRM32NR72A104KA01L ATC800A330JT RF3934PCBA-410 140W ERJ8GEYJ100V GaN ADS
    Text: RF3934 120W GaN WIDEBAND POWER AMPLIFIER Package: Flanged Ceramic Features         Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Small Signal Gain=13dB at 2GHz 48V Operation Typical Performance


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    PDF RF3934 RF3934 DS111005 GRM55ER72A475KA01L DS111005 GRM32NR72A104KA01L ATC800A330JT RF3934PCBA-410 140W ERJ8GEYJ100V GaN ADS

    Untitled

    Abstract: No abstract text available
    Text: RFG1M20090 RFG1M20090 90W GaN Power Amplifier 1.8GHz to 2.2GHz The RFG1M20090 is optimized for commercial infrastructure, military communication, and general purpose amplifier applications in the 1.8GHz to 2.2GHz frequency band, ideal for constant envelope, pulsed


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    PDF RFG1M20090 RFG1M20090 DS130823

    Untitled

    Abstract: No abstract text available
    Text: RF3933 RF3933 90W GaN Wideband Power Amplifier The RF3933 is a 48V, 90W high power discrete amplifier designed for commercial wireless infrastructure, cellular and WiMAX infrastructure, industrial/scientific/medical and general purpose broadband amplifier


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    PDF RF3933 RF3933 DS130905

    Untitled

    Abstract: No abstract text available
    Text: RF3934 RF3934 120W GaN Wideband Power Amplifier The RF3934 is a 48V 120W high power discrete amplifier designed for commercial wireless infrastructure, cellular and WiMAX infrastructure, industrial/scientific/medical and general purpose broadband amplifier


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    PDF RF3934 RF3934 DS131206

    Untitled

    Abstract: No abstract text available
    Text: RFG1M20180 RFG1M20180 180W GaN Power Amplifier 1.8GHz to 2.2GHz The RFG1M20180 is optimized for commercial infrastructure applications in the 1.8GHz to 2.2GHz frequency band, ideal for WCDMA and LTE applications. Using an advanced 48V high power density gallium nitride GaN semiconductor process optimized for high


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    PDF RFG1M20180 RFG1M20180 DS130822

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


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    PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    gcm155r71c104ka55d

    Abstract: GCM32ER71E106KA57L GCM32 GCM1885C1H101JA16D nd 2981 GCM188R72A103KA37D GCM1885C1H102JA16D GCM188R71H102KA37D GCM155R71E473KA55D GCM188R71E474KA64D
    Text: Multilayer Ceramic Chip Capacitors Cont. Digi-Key Tape and Reel Part No. Qty. Pricing Murata Part No. X5R 6.3 1812 100 Y5V 50 33µF 33µF 47µF 47µF 100µF .15µF 1.5µF ±10% ±20% ±10% ±20% ±20% +80, -20% +80, -20% 2.0 2.0 2.5 2.5 2.8 1.8 1.8 490-1919-1-ND


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    PDF 490-1919-1-ND 490-1920-1-ND 490-1921-1-ND 490-1922-1-ND 490-1923-1-ND 490-1924-1-ND 490-1925-1-ND 490-1919-2-ND 490-1920-2-ND 490-1921-2-ND gcm155r71c104ka55d GCM32ER71E106KA57L GCM32 GCM1885C1H101JA16D nd 2981 GCM188R72A103KA37D GCM1885C1H102JA16D GCM188R71H102KA37D GCM155R71E473KA55D GCM188R71E474KA64D

    GRM155R71C103KA01D

    Abstract: 0715k4l RC0603FR-074K99L LM25576MH RC0603FR-074K99 C5750X7R2A475M LM25576 LM5576 T520D227M010ASE025 TSSOP-20
    Text: National Semiconductor Reference Design 128 Richard Levin January 2007 1.0 Design Specifications Inputs Output #1 vInMin=6V vOut1=5V vInMax=42V iOut1=3A 2.0 Design Description This LM25576 reference design is based on a LM25576 demonstration board which was a assembled and tested platform to evaluate the LM25576 SIMPLE SWITCHER stepdown converter. The reference design takes a 6V-42V input


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    PDF LM25576 LM25576 V-42V CSP-9-111S2) CSP-9-111S2. RD-128 GRM155R71C103KA01D 0715k4l RC0603FR-074K99L LM25576MH RC0603FR-074K99 C5750X7R2A475M LM5576 T520D227M010ASE025 TSSOP-20

    panasonic inverter dv 707 manual

    Abstract: 018T A423 Mosfet FTR 03-E Arcotronics 1.27.6 nsl 7053 mkp DX 3500 manual Honeywell DBM 01A Polyester capacitors 823k 250V SPRAGUE powerlytic 36Dx sprague 68D
    Text: PASSIVE COMPONENTS Resistors Networks and Arrays Bourns. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 590, 591, 592 Caddock . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 593 CTS. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 594


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    PDF